中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

83 records (took 0.023 seconds)

    FUNCTIONAL MOLECULAR ELEMENT AND FUNCTIONAL MOLECULAR DEVICE
    12.
    发明公开
    FUNCTIONAL MOLECULAR ELEMENT AND FUNCTIONAL MOLECULAR DEVICE 审中-公开
    功能性分子元件和功能性分子装置

    公开(公告)号：EP1577962A4

    公开(公告)日：2009-08-05

    申请号：EP03786334

    申请日：2003-12-25

    Applicant: SONY CORP ,  SONY DEUTSCHLAND GMBH

    Inventor： MATSUI ERIKO ,  HARNACK OLIVER ,  MATSUZAWA NOBUYUKI ,  YASUDA AKIO

    IPC: B82B1/00 ,  H01L29/06 ,  H01L29/66 ,  H01L51/00

    CPC classification number: H01L51/0595 ,  B82Y10/00 ,  Y10S977/731 ,  Y10S977/791 ,  Y10S977/94 ,  Y10S977/943

    Abstract: A functional molecular element having a function controlled by an electric field on a new principle. In the functional molecular element (1), a Lewis base molecule (14) having a positive dielectric constant anisotropy or a dipole moment along the major axis of the molecule is provided in the form of a pendant to a linear or filmy foundation molecule (2) having a conjugated system and exhibiting a conductivity, with a metal ion (3) capable of acting as a Lewis acid interposed between the molecules. When a voltage is applied, the conformation is changed to exhibit the function. The molecules (2, 14) and the metal ion (3) form a complex. When an electric field is applied to the Lewis base molecule (14) in a direction, for example, perpendicular to the paper as shown in Fig. 1(b), the Lewis molecule (14) oscillates within the range of 90 degrees around a vertical axis in the paper plane. When an electric field is applied to the Lewis base molecule (14) in a vertical direction in the paper plane as shown in Fig. 1(c), the Lewis molecule (14) rocks around an axis perpendicular to the paper plane to switch on/off the conductivity of the conducting foundation molecule (2).

    MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDER/REPRODUCER COMPRISING THE SAME
    17.
    发明公开
    MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDER/REPRODUCER COMPRISING THE SAME 失效
    磁记录介质与磁记录播放机本

    公开(公告)号：EP0927992A4

    公开(公告)日：1999-09-15

    申请号：EP98932583

    申请日：1998-07-17

    Applicant: SONY CORP

    Inventor： KISHII NORIYUKI ,  KAMEI TAKAHIRO ,  KURIHARA KENICHI ,  KOBAYASHI KEN ,  IWAMOTO YUTAKA ,  MATSUZAWA NOBUYUKI

    IPC: C10M171/00 ,  G11B5/71 ,  G11B5/725 ,  C10M105/00 ,  G11B5/72

    CPC classification number: C10M171/00 ,  G11B5/71 ,  G11B5/725

    Abstract: A magnetic recording medium having the outermost layer holding liquid crystal molecules of specified monocyclic, dicyclic and tricyclic structures as a lubricant; and a magnetic recorder/reproducer having a magnetic recording medium for recording information and a magnetic head for recording/reproducing information on/from the magnetic recording medium, wherein the minimum interval between the geometrical average planes of the magnetic recording medium and the magnetic head is 50 nm or less and liquid crystal molecules of specified structure are held as a lubricant in the outermost layer of the magnetic recording medium. The lubricant contains liquid crystal molecules having phase transition from the solid phase to the liquid phase and intermediate properties between liquid and solid. The lubricant can release the kinetic energy produced by sliding through phase transition. The magnetic recording medium and the magnetic recorder/reproducer can satisfy all the characteristics of durability against continuous sliding, low adhesiveness and high meniscoid force.

    Antireflection film and exposure method
    18.
    发明专利
    Antireflection film and exposure method 有权
    抗反射膜和曝光方法

    公开(公告)号：JP2007220848A

    公开(公告)日：2007-08-30

    申请号：JP2006038806

    申请日：2006-02-16

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： MATSUZAWA NOBUYUKI ,  BOONTARIKA THUNNAKART ,  OZAWA KEN ,  KUROBE TOSHIHIRO ,  WATANABE YOKO

    IPC: H01L21/027 ,  G02B1/11 ,  G03F7/11 ,  G03F7/20

    Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance on an interface between a resist layer and a silicon semiconductor substrate, even if exposure light is made incident obliquely by one layer in a liquid immersion lithography technique, and to provide an exposure method. SOLUTION: The double layer structure antireflection film is used in exposing a resist layer in an exposure system having a wavelength of 190-195 nm and having a numerical aperture of 1.3-1.4, and is formed between the resist layer and a silicon nitride film formed on the surface of the silicon semiconductor substrate. When complex refractive indexes N 1 , N 2 of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i, film thicknesses of the upper layer and lower layer are d 1 , d 2 and a predetermined combination is selected as the combination of values [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], n 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy the following relation: ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：即使在液浸式光刻技术中使曝光光倾斜地入射一层，提供能够充分降低抗蚀剂层和硅半导体衬底之间的界面上的反射率的抗反射膜，以及 提供曝光方法。 解决方案：双层结构抗反射膜用于在波长为190-195nm并且数值孔径为1.3-1.4的曝光系统中曝光抗蚀剂层，并且形成在抗蚀剂层和硅之间 形成在硅半导体衬底的表面上的氮化物膜。 当复合折射率N 1 时，构成防反射膜的上层和下层的N 2 由表达式表示; N 1 = n 1 i，N 2 = n 2 -k 2，上层和下层的膜厚度为d SB> 1 ，d 2 ，并且选择预定的组合作为组合 的值[n 10 ，k 10 ，d 10 ，20 SB>，d 20 ，n 1 ，k 1 ，d 1 / SB>，k 2 ，d 2 满足以下关系：ä（n 1 -n 10 ） /（N 1M -n 10 ）} 2 + A（K 1 -k 10 < / SB>）/（K 1M -k 10 ）} 2 + A（D 1 -d < SB> 10 ）/（D 1M -d 10 ）} 2 + A（N 2 -n 20 ）/（N 2米 -n 20 ）} 2 + A（K 2 -k 20 ）/（K 2米 -k 20 ）} 2 + A（ ð 2 -d 20 ）/（D 2米 -d 20 ）} 2 ≤1。 版权所有（C）2007，JPO＆INPIT

    RESIST MATERIAL AND EXPOSURE METHOD
    19.
    发明专利
    RESIST MATERIAL AND EXPOSURE METHOD 审中-公开

    公开(公告)号：JP2003186191A

    公开(公告)日：2003-07-03

    申请号：JP2001386306

    申请日：2001-12-19

    Applicant: SONY CORP

    Inventor： MATSUZAWA NOBUYUKI

    IPC: G03F7/032 ,  C08L101/04 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To enable an ultra-microfabrication exceeding the conventional techniques by using a polymeric material having low absorption in the wavelength region of vacuum ultraviolet radiation (VUV). SOLUTION: In an exposure method in which a resist layer is selectively exposed with UV and patterned in a prescribed shape, a polymeric material having an introduced cyclohexane group in which fluorine atoms have been substituted for all of hydrogen atoms bonding to continuously adjacent four carbon atoms is used as a polymeric material forming the resist layer. COPYRIGHT: (C)2003,JPO

    RESIST MATERIAL AND EXPOSURE METHOD
    20.
    发明专利
    RESIST MATERIAL AND EXPOSURE METHOD 审中-公开

    公开(公告)号：JP2003186189A

    公开(公告)日：2003-07-03

    申请号：JP2001385966

    申请日：2001-12-19

    Applicant: SONY CORP

    Inventor： MATSUZAWA NOBUYUKI

    IPC: G03F7/032 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To enable an ultra-microfabrication superior to the conventional techniques by using a polymeric material having low absorption in the wavelength region of vacuum ultraviolet radiation (VUV). SOLUTION: In an exposure method in which a resist layer is selectively exposed with UV and patterned in a prescribed shape, a polymeric material having an introduced cyclopentane group in which one or more hydrogen atoms have been replaced with at least one selected from a fluorine atom, a trifluoromethyl group and a difluoromethylene group is used as a polymeric material forming the resist layer. COPYRIGHT: (C)2003,JPO

Patent Agency Ranking