Abstract:
PROBLEM TO BE SOLVED: To provide a ferroelectric nonvolatile semiconductor memory having a stacked capacitor structure and a structure wherein a contact plug is reliably prevented from being oxidized. SOLUTION: The ferroelectric nonvolatile semiconductor memory consists of a selection transistor TR, interlayer insulating layer 16, contact plug 18A, diffusion barrier layer 20, lower electrode 21, ferroelectric layer 22 and upper electrode 23. A side wall of the lower electrode 21 is covered with a first oxygen barrier layer 40, while a second oxygen barrier layer 41 is formed on a portion of the oxygen barrier layer 40, proximate to the lower end of the lower electrode 21 and the surface of the interlayer insulating layer 16. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a high-frequency device that can accurately align a high-frequency device having an opening in a substrate, and to provide a method of manufacturing the device.SOLUTION: A lower portion 14D of a through-electrode, an opening 16, and a projection 17 are formed in a substrate 11. On the surface of the substrate 11, an insulating film 12, a dielectric layer 13, an upper portion 14A of the through-electrode that penetrates the insulation film 12 and the dielectric layer 13, and a switching element 15 are formed. The opening 16 and the projection 17 are formed simultaneously in the substrate 11, and thereafter, the lower portion 14D of the through-electrode that penetrates the substrate 11 and is in contact with the upper portion 14A of the through electrode is formed. By forming the opening 16 and the projection 17 at the same time, the high-frequency device 1 that can be accurately aligned, with respect to a mount substrate such as an interposer substrate can be obtained without increasing the number of processes.
Abstract:
PROBLEM TO BE SOLVED: To provide a sealing structure which can be manufactured in a relatively inexpensive and stable manner to be miniaturized with a protecting film for sealing. SOLUTION: The sealing structure comprises a structure 10 formed on a substrate 1, a dummy member 20 arranged on the substrate 1 for the structure 10, the protecting film 7 provided on the structure 10 and the dummy member 20 for sealing the structure 10 and the dummy member 20, and a hollow space 6 provided between the structure 10 and the protecting film 7. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To improve reliability on a capsulated electromechanical element. SOLUTION: The electromechanical element is provided with an electromechanical element body 64 having lower electrodes 62 and 63 and a moving piece 35, and an over-coated film 38 sealing the electromechanical element body 64 with a space 37 held therein. Supports 52 are provided between the over-coated film 38 and the moving piece 35. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To solve the problem that, although the hydrogen barrier property of a dielectric capacitor covered with an Al2 O3 film is improved in conventional cases, the aspect ratio of the dielectric capacitor becomes high when the Al2 O3 film is formed by a sputtering method from between the sputtering method and an MOCVD method, that a step coverage causes the problem of the film thickness of a sidewall part becoming thin so as to deteriorate the hydrogen barrier property and the Al2 O3 film being stripped when the film is formed directly on the dielectric capacitor. SOLUTION: A lower electrode 2, a dielectric layer 3 and an upper electrode 4 are laminated sequentially on an Si substrate, the dielectric capacitor is obtained, the dielectric capacitor is covered with a Ta2 O5 , Y2 O3 , CeO2 or HfO2 insulating film 5, and the insulating film 5 is covered with the Al2 O3 film 6.
Abstract:
PROBLEM TO BE SOLVED: To provide a connector which can connect and disconnect a plurality of signal routes with a small number of actuators and can miniaturize a MEMS switch, and to provide a switch using this contact. SOLUTION: The connector 1 includes a movable section 10, and two sets of fixed contact electrode pair; and movable contact electrodes 21, 22 are arranged on two side faces of the movable section 10. The fixed contact electrode 31, the movable contact electrode 21, and the fixed contact electrode 32 constitute the first signal route; and the fixed contact electrode 31, the movable contact electrode 22, and the fixed contact electrode 32 constitute the second signal route. The movable section 10 is connected with a driving means (actuator) via a rod (push-pull rod) 40. One of two signal routs is selected since the movable section 10 is displaced in a one-axis direction by connecting with the displacement of the rod 40. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a contact switch capable of controlling generation of stiction at a contact part and achieving a longer life; and to provide a semiconductor device, a module, and an electronic equipment with the built-in contact switch. SOLUTION: The contact switch 11A is provided on a signal circuit 12 with a fixed contact 23 and a movable contact 24 facing the fixed contact 23. On the fixed contact 23, there is provided a sliding face 25 (a curved face of a concave shape) and a sliding face 26 (a curved face of a convex shape) corresponding to the sliding face is provided on the movable contact 24. A degree of curvature (a curveture ratio) of the sliding face 26 of the movable contact 24 side is set to be larger than that of the sliding face 25 of the fixed contact 23 side. At an ON operation, the movable contact 24 displaces toward the fixed contact 23 side and contact with each other, while it performs a sliding action, or the sliding face 26 is elastically deformed along the sliding face 25. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an electromechanical device which prevents a fluctuation in a resonance frequency and improves a yield by eliminating positional deviation of supports resulting from a deviation in adapting a mask, its manufacturing method and a resonator by the electromechanical device. SOLUTION: The electromechanical device 25 having a moving member 10 arranged on a substrate 5 through space 27 is provided with a protective film 15 for sealing the electromechanical device 25 through space 26, wherein the protective film 15 and the moving member 10 are supported by supports 16A and 16B that penetrate the moving member 10. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To solve a problem such as deformation or breakage of a needle caused by a load or the like on the mover in a manufacturing process of an electromechanical element. SOLUTION: A mover 5 is formed on a sacrifice layer 23, and a plurality of holes 5h for exposing the sacrifice layer 23 are formed in the mover 5. The first etching to leave a part of the sacrifice layer is performed from the holes formed in the mover and from the periphery of the mover, and the mover is mechanically supported by the remaining portion of the sacrifice layer. In this state, the loading work is performed, the second etching is performed subsequently to remove the remaining portion of the sacrifice layer. By performing the loading work on the needle in a reinforcing state by a part of the sacrifice layer, deformation, breakage or the like of the mover in the manufacturing process by the load or the like can be avoided. COPYRIGHT: (C)2007,JPO&INPIT