公开(公告)号：JP2012156549A

公开(公告)日：2012-08-16

申请号：JP2012096727

申请日：2012-04-20

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： MIYAJIMA TAKAO ,  KODA RINTARO ,  WATANABE HIDEKI ,  OKI TOMOYUKI ,  KURAMOTO MASARU ,  YOKOYAMA HIROYUKI

IPC: H01S5/022 ,  H01S5/50

Abstract: PROBLEM TO BE SOLVED: To provide an optical amplifier capable of suppressing change in drive current and optical output with time.SOLUTION: An optical amplifying element 20 on a stem 10 is called a transparent type SOA and amplifies short-wavelength light having entered into an incidence side end face 20A to emit light having larger luminance than the incident light from an injection side end face 20B. Both the incidence side end face 20A and the injection side end face 20B of the optical amplifying element 20 have an anti-reflection film on its surface. The optical amplifying element 20 is sealed by the stem 10 and a cap 30. Light transparent windows 32 are provided on an opposite part of the incidence side end face 20A and the injection side end face 20B, respectively, in the cap 30.

Abstract translation: 要解决的问题：提供一种能够抑制驱动电流和光输出随时间变化的光放大器。 解决方案：杆10上的光放大元件20被称为透明型SOA，并且放大已经进入入射侧端面20A的短波长光，以发射具有比来自注射侧端的入射光更大的亮度的光 面20B。 光放大元件20的入射侧端面20A和注射侧端面20B都在其表面上具有防反射膜。 光学放大元件20由杆10和盖30密封。透光窗32分别设置在盖30中的入射侧端面20A和注射侧端面20B的相对部分上。

版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011204914A

公开(公告)日：2011-10-13

申请号：JP2010070924

申请日：2010-03-25

Applicant: Sony Corp ,  ソニー株式会社

Inventor： FUJITA GORO ,  MIYAJIMA TAKAO ,  WATANABE HIDEKI

IPC: H01S5/065 ,  H01S5/026 ,  H01S5/343

CPC classification number: G11B7/1263 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0601 ,  H01S5/06255 ,  H01S5/0658 ,  H01S5/22 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide an optical oscillator capable of readily and simply obtaining desired pulsed light-frequency.SOLUTION: The optical oscillator comprises a supersaturation-absorber part having a double quantum well separation containment heterostructure made of GaInN/GaN/AlGaN material, and for applying negative bias voltage; a self-exciting oscillation semiconductor laser 1 having a gain part for injecting gain current; a light separating means 3 for separating a part of laser light from the self-exciting oscillation semiconductor laser 1; a light receiving element 5 for receiving laser light separated by the light separating means; and a current limiting circuit 6 for controlling current injected into the gain part of the self-exciting oscillation semiconductor laser 1 based on an amount of laser light received by the light receiving element 5.

Abstract translation: 要解决的问题：提供能够容易且简单地获得期望的脉冲光频率的光学振荡器。解决方案：光学振荡器包括具有由GaInN / GaN / AlGaN材料制成的双量子阱分离容纳异质结构的过饱和吸收体部分， 并施加负偏压; 具有用于注入增益电流的增益部分的自激振荡半导体激光器1; 用于分离来自自激振荡半导体激光器1的一部分激光的光分离装置3; 用于接收由光分离装置分离的激光的光接收元件5; 以及限流电路6，用于根据由光接收元件5接收的激光量控制注入到自激振荡半导体激光器1的增益部分的电流。

公开(公告)号：JP2010251712A

公开(公告)日：2010-11-04

申请号：JP2010031299

申请日：2010-02-16

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： WATANABE HIDEKI ,  MIYAJIMA TAKAO ,  IKEDA MASAO ,  OKI TOMOYUKI ,  KURAMOTO MASARU ,  YOKOYAMA HIROYUKI

IPC: H01S5/0625 ,  H01S5/026 ,  H01S5/065 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/0625 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser device accurately, surely and easily forming a second electrode and a ridge structure separated by a separating groove. SOLUTION: This method for manufacturing a bi-section GaN-based semiconductor laser device includes respective processes of: (A) forming a first compound semiconductor layer 30, a compound semiconductor layer 40 that constitutes a light-emitting region 41 and a saturable absorption region 42, and a second compound semiconductor layer 50; thereafter (B) forming a strip-shaped second electrode 62 on the second compound semiconductor layer 50; then (C) forming a ridge structure by etching at least a part of the second compound semiconductor layer 50 using the second electrode 62 as an etching mask; and thereafter (D) forming a separating groove 62C in the second electrode 62 by a wet etching method, and thereby separating the second electrode into a first portion 62A and a second portion 62B by the separating groove. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了准确地提供半导体激光装置的制造方法，可靠地容易地形成由分离槽分离的第二电极和脊状结构。 解决方案：用于制造双相GaN基半导体激光器件的方法包括以下各处理：（A）形成第一化合物半导体层30，构成发光区域41的化合物半导体层40和 饱和吸收区域42和第二化合物半导体层50; 此后（B）在第二化合物半导体层50上形成带状的第二电极62; 然后（C）通过使用第二电极62作为蚀刻掩模蚀刻第二化合物半导体层50的至少一部分来形成脊结构; 然后（D）通过湿式蚀刻法在第二电极62中形成分离槽62C，从而通过分离槽将第二电极分离成第一部分62A和第二部分62B。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010034252A

公开(公告)日：2010-02-12

申请号：JP2008194373

申请日：2008-07-29

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： YOKOYAMA HIROYUKI ,  KONO SHUNSUKE ,  OKI TOMOYUKI ,  IKEDA MASAO ,  MIYAJIMA TAKAO ,  WATANABE HIDEKI

IPC: H01S5/068

CPC classification number: H01S5/06216 ,  H01S5/0428

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser with an ultrashort pulse and an ultrahigh output by a simple construction and structure.
SOLUTION: The semiconductor laser is driven by a pulse current with a value that is ten times or more as large as that of a threshold current or a pulse voltage that is twice or more as large as that of a threshold voltage, or the semiconductor laser emits a first light peak with a light intensity larger than three wats and with a half width of 20 picoseconds or less, and a second light peak, subsequent to the first light peak, that has an energy of 1 nano-joule or larger and a duration of 1 nanosecond or more.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：通过简单的结构和结构为半导体激光器提供超短脉冲和超高输出。 解决方案：半导体激光器由脉冲电流驱动，其值是阈值电流的十倍或更大的值，或者是阈值电压的两倍或更多的脉冲电压，或 所述半导体激光器发射具有大于3瓦特的光强度并且具有20皮秒或更小的半宽度的第一光峰，以及在所述第一光峰之后的具有1纳焦耳的能量的第二光峰或 较大且持续时间为1纳秒或更长。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2007116097A

公开(公告)日：2007-05-10

申请号：JP2006215342

申请日：2006-08-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMAE AKIRA ,  SHIOMI HARUNORI ,  KAZETAGAWA MUNEYUKI ,  AMI TAKAAKI ,  MIYAJIMA TAKAO ,  HIRAMATSU YUJI ,  HATADA IZUHO ,  OKANO NOBUKATA ,  TOMITANI SHIGETAKA ,  YANASHIMA KATSUNORI ,  HINO TOMOKIMI ,  NARUI HIRONOBU

IPC: H01L33/08 ,  C30B29/38 ,  H01L21/205 ,  H01L33/16 ,  H01L33/32

CPC classification number: H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting diode which emits light efficiently and which can be manufactured at low costs by a single epitaxial growth, and to provide a manufacturing method of the same. SOLUTION: A substrate 11 having a plurality of protrusions 12 is formed on one main surface of the substrate 11 such as a sapphire substrate wherein the protrusion 12 is made of a material different in type from that of the substrate, an SiO 2 film e.g., and a first nitride-based group III-V compound semiconductor layer 15 is grown on each recess 13 between the protrusions 12 until making a triangle in section wherein a bottom surface of the recess becomes a base of the triangle. Thereafter, a second nitride-based group III-V compound semiconductor layer 15 is laterally grown on the substrate from the first nitride-based group III-V compound semiconductor layer 15. The protrusions 12 are triangular or trapezoidal e.g. in section. On the second nitride-based group III-V compound semiconductor layer 15, a third nitride-based group III-V compound semiconductor layer 15 including an active layer and a nitride-based group III-V compound semiconductor layer 15 are formed. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种有效发光并且可以通过单次外延生长以低成本制造的发光二极管，并提供其制造方法。 解决方案：具有多个突起12的基板11形成在诸如蓝宝石基板的基板11的一个主表面上，其中突起12由与基板不同的材料制成， SB> 2 膜，并且在突起12之间的每个凹部13上生长第一氮化物基III-V族化合物半导体层15，直到形成三角形，其中凹部的底表面成为基底 的三角形。 此后，第二氮化物基III-V族化合物半导体层15从第一氮化物基III-V族化合物半导体层15横向生长在衬底上。突起12是三角形或梯形的。 在部分。 在第二氮化物基III-V族化合物半导体层15上，形成包括有源层和氮化物基III-V族化合物半导体层15的第三氮化物基III-V族化合物半导体层15。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006108202A

公开(公告)日：2006-04-20

申请号：JP2004289544

申请日：2004-10-01

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SETO MASAHIRO ,  INOUE TOMOKO ,  KURAMOCHI NAOYOSHI ,  HITSUDA YUKIHISA ,  OKANO NOBUKATA ,  SHIOMI HARUNORI ,  MIYAJIMA TAKAO ,  AMI TAKAAKI

IPC: H01L21/205 ,  H01L33/32 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing light emitting element by which the yield of a light emitting element can be improved by reducing the influence of the warping of a substrate caused by epitaxial growth. SOLUTION: The method of manufacturing the light emitting element includes an epitaxial growth step of adhering a film to the surface of the substrate through epitaxial growth, a flattening step of flattening the rear surface of the substrate by grinding after the epitaxial growth step, and a substrate treating step of performing prescribed treatment to the surface of the substrate after the flattening step. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种制造发光元件的方法，通过减少由外延生长引起的基板翘曲的影响，可以提高发光元件的产量。 解决方案：制造发光元件的方法包括外延生长步骤，其通过外延生长将膜粘附到衬底的表面;平坦化步骤，在外延生长步骤之后通过研磨来平坦化衬底的后表面 以及在平坦化工序后对基板的表面进行规定处理的基板处理工序。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004022563A

公开(公告)日：2004-01-22

申请号：JP2002171137

申请日：2002-06-12

Applicant: Ritsumeikan ,  Sony Corp ,  ソニー株式会社 ,  学校法人立命館

Inventor： MIYAJIMA TAKAO ,  SAITO YOSHIKI ,  NANISHI YASUYUKI

IPC: H01L29/201 ,  H01L21/205 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a GaInN layer that has high In composition and superior optical characteristics.
SOLUTION: A cleaned c-surface sapphire substrate 22 is introduced into an MBE device, and thermal cleaning is performed for ten minutes at 800°C in vacuum. Then the temperature of the substrate is lowered to 550°C, and the surface of the sapphire substrate is nitrided by a nitrogen plasma. Then the temperature of the substrate is lowered to 300°C, and the sapphire substrate is kept for ten minutes under a condition where the amount of In beam is 8×10
-8 Torr, the flow rate of nitrogen gas is 2 sccm, and RF power is 330 W. By using the nitrogen plasma in an MBE method, a low temperature InN buffer layer 24 having a thickness of 30nm is grown on the sapphire substrate at an average growing speed 70nm/hour. A surface of the low temperature InN buffer layer has a nitrogen polarity. Then the temperature of the substrate is raised to 550°C, and an annealing treatment is performed while keeping the temperature for three minutes, to flatten the surface. Continuously, Ga, In and the nitrogen plasma are supplied to grow a Ga
1-x In
x N mixed crystal semiconductor layer 26, in which In composition X is 0.73, on the low temperature InN buffer layer, in a MBE method.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JPH08298352A

公开(公告)日：1996-11-12

申请号：JP23028594

申请日：1994-08-31

Applicant: SONY CORP ,  TRINITY COLLEGE DUBLIN

Inventor： MIYAJIMA TAKAO ,  FURETSUDO PII ROUGU ,  JIYON EFU DONEGAN ,  JIYON HEGATEII

IPC: H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE: To realize a semiconductor light emitting element using II-VI compound semiconductor which can use pseudo two-dimensional system excitons even at a room temperature. CONSTITUTION: In a semiconductor light emitting element having a first clad layer 2, an active layer 3 of single quantum well structure or multiple quantum well structure, and a second clad layer 4, the energy gap between the first clad layer 2 and the second clad layer 4 is Egc , and the energy gap of a quantum well layer constituting the active layer 3 is Egw . The quantum well structure is so designed that the condition of Egw /Egc

公开(公告)号：JPH0661580A

公开(公告)日：1994-03-04

申请号：JP22935692

申请日：1992-08-05

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  AKIMOTO KATSUHIRO ,  MIYAJIMA TAKAO ,  OZAWA MASABUMI ,  MORINAGA YUKO ,  HIEI FUTOSHI

IPC: H01S5/00 ,  H01S5/042 ,  H01S3/18

Abstract: PURPOSE:To provide a semiconductor laser which can output blue light by using a ZnMgSSe compound semiconductor. CONSTITUTION:An n-type ZnMgSSe clad layer 3, an active layer 4 consisting of a ZnSe/ZnMgSSe multiple quantum well layer, a p-type ZnMgSSe clad layer 5 and a p-type ZnSe contact layer 6 are formed in multilayer on an n-type GaAs substrate 1 with an n-type ZnSe buffer layer 2 therebetween by a molecular epitaxial method one by one. An Au/Pd electrode 8 is used for an p-side electrode and an In electrode 9 is used for an n-side electrode.

公开(公告)号：JPH0277134A

公开(公告)日：1990-03-16

申请号：JP22953488

申请日：1988-09-13

Applicant: SONY CORP

Inventor： AKIMOTO KATSUHIRO ,  MIYAJIMA TAKAO

IPC: H01L21/265 ,  H01L21/324 ,  H01L21/477

Abstract: PURPOSE:To enable performing heat treatment just sufficiently by a method wherein heat treatment is performed, while a voltage is applied in the thickness direction of an epitaxial layer and the current flowing through the epitaxial layer is measured. CONSTITUTION:On one main surface of a conductive GaAs substrate 1 of P-type, an undoped ZnSe epitaxial layer 2 is grown; P-type impurity for ZnSe, like nitrogen, is ion-implanted: after an electrode 3 composed of metal like indium is formed on the other surface of the substrate 1, the electrode 3 is brought into ohmic contact with the GaAs substrate 1 by alloying. Two members wherein the ZnAs epitaxial layer 2 is formed on the GaAs substrate 1 are so stacked that the surfaces of each ZnSe epitaxial layer 2 comes into close contact with each other. After that, a voltage E is applied between the electrodes 3 formed on each GaAs substrate 1, and heat treatment is performed at a prescribed temperature, while the flowing current between the electrodes 3 is monitored with an ammeter 4.