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    1.
    发明专利
    未知

    公开(公告)号：DE69710539T2

    公开(公告)日：2002-10-31

    申请号：DE69710539

    申请日：1997-07-08

    Applicant: SONY CORP

    Inventor： MIYAJIMA TAKAO

    IPC: H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

    Abstract: There are provided an ohmic electrode capable of operating elements stably for a long period by making contact specific resistance smaller and also increasing thermal stability thereof and a method of forming the same. An electrode layer is formed on a p-type compound semiconductor layer composed of p-type GaN and so on through a contact layer composed of p-type GaN and so on. The contact layer is formed by an MBE method, and the hole density is set higher than that of the p-type compound semiconductor layer. The electrode layer is formed by laminating a transition metal layer composed of a transition metal other than gold or platinum, a platinum layer and a gold layer one after another and annealing the laminated layers thereafter. With this, the platinum layer is made to adhere closely to the p- type compound semiconductor layer by the transition metal layer while preventing gold from diffusing toward the p- type compound semiconductor layer with the platinum layer.

    2.
    发明专利
    未知

    公开(公告)号：DE69803721T2

    公开(公告)日：2002-09-12

    申请号：DE69803721

    申请日：1998-05-22

    Applicant: SONY CORP

    Inventor： ASATSUMA TSUNENORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

    IPC: H01L21/203 ,  H01L21/205 ,  H01L29/205 ,  H01L29/207 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00

    Abstract: A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of the first and second layers is thin, the stacked layers as a whole have properties of p-type AlGaN mixed crystal although the first layers do not include Mg and the second layers do not include Al. An Al source and a Mg source are temporally separated to be introduced in a stacking process. A reaction between the Al source and Mg source which may interfere desirable crystal growth is thereby prevented. Crystals of good quality are thus grown and electrical conductivity is thereby improved.

    3.
    发明专利
    未知

    公开(公告)号：DE69803721D1

    公开(公告)日：2002-03-21

    申请号：DE69803721

    申请日：1998-05-22

    Applicant: SONY CORP

    Inventor： ASATSUMA TSUNENORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

    IPC: H01L21/203 ,  H01L21/205 ,  H01L29/205 ,  H01L29/207 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00

    Abstract: A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of the first and second layers is thin, the stacked layers as a whole have properties of p-type AlGaN mixed crystal although the first layers do not include Mg and the second layers do not include Al. An Al source and a Mg source are temporally separated to be introduced in a stacking process. A reaction between the Al source and Mg source which may interfere desirable crystal growth is thereby prevented. Crystals of good quality are thus grown and electrical conductivity is thereby improved.

    5.
    发明专利
    未知

    公开(公告)号：DE69313033T2

    公开(公告)日：1998-03-12

    申请号：DE69313033

    申请日：1993-06-18

    Applicant: SONY CORP

    Inventor： IKEDA MASAO ,  ITO SATOSHI ,  IOCHI YOSHINO ,  MIYAJIMA TAKAO ,  OZAWA MASAFUMI ,  AKIMOTO KATSUHIRO ,  ISHIBASHI AKIRA ,  HIEI FUTOSHI

    IPC: H01L29/15 ,  H01L21/44 ,  H01L33/06 ,  H01L33/28 ,  H01L33/40 ,  H01S5/042 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347 ,  H01S3/025 ,  H01S3/19 ,  H01L33/00 ,  H01L31/0352

    Abstract: A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer (2), an active layer (3), a p-type ZnMgSSe cladding layer (4), a p-type ZnSe contact layer (5) and a p-type ZnTe contact layer (6) which are stacked in this sequence on an n-type GaAs substrate (1). A p-side electrode (7) is provided on the p-type ZnTe contact layer (6). An n-side electrode (8) is provided on the back surface of the n-type GaAs substrate (1). A maltiquantum well layer (9) comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer (5) along the junction interface between the p-type ZnSe contact layer (5) and the p-type ZnTe contact layer (6). Holes injected from the p-side electrode (7) pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer (9).

    8.
    发明专利
    未知

    公开(公告)号：DE69710539D1

    公开(公告)日：2002-03-28

    申请号：DE69710539

    申请日：1997-07-08

    Applicant: SONY CORP

    Inventor： MIYAJIMA TAKAO

    IPC: H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

    Abstract: There are provided an ohmic electrode capable of operating elements stably for a long period by making contact specific resistance smaller and also increasing thermal stability thereof and a method of forming the same. An electrode layer is formed on a p-type compound semiconductor layer composed of p-type GaN and so on through a contact layer composed of p-type GaN and so on. The contact layer is formed by an MBE method, and the hole density is set higher than that of the p-type compound semiconductor layer. The electrode layer is formed by laminating a transition metal layer composed of a transition metal other than gold or platinum, a platinum layer and a gold layer one after another and annealing the laminated layers thereafter. With this, the platinum layer is made to adhere closely to the p- type compound semiconductor layer by the transition metal layer while preventing gold from diffusing toward the p- type compound semiconductor layer with the platinum layer.

    9.
    发明专利
    未知

    公开(公告)号：DE69313033D1

    公开(公告)日：1997-09-18

    申请号：DE69313033

    申请日：1993-06-18

    Applicant: SONY CORP

    Inventor： IKEDA MASAO ,  ITO SATOSHI ,  IOCHI YOSHINO ,  MIYAJIMA TAKAO ,  OZAWA MASAFUMI ,  AKIMOTO KATSUHIRO ,  ISHIBASHI AKIRA ,  HIEI FUTOSHI

    IPC: H01L29/15 ,  H01L21/44 ,  H01L33/06 ,  H01L33/28 ,  H01L33/40 ,  H01S5/042 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347 ,  H01S3/025 ,  H01S3/19 ,  H01L33/00 ,  H01L31/0352

    Abstract: A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer (2), an active layer (3), a p-type ZnMgSSe cladding layer (4), a p-type ZnSe contact layer (5) and a p-type ZnTe contact layer (6) which are stacked in this sequence on an n-type GaAs substrate (1). A p-side electrode (7) is provided on the p-type ZnTe contact layer (6). An n-side electrode (8) is provided on the back surface of the n-type GaAs substrate (1). A maltiquantum well layer (9) comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer (5) along the junction interface between the p-type ZnSe contact layer (5) and the p-type ZnTe contact layer (6). Holes injected from the p-side electrode (7) pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer (9).

    Light-emitting element and manufacturing method of the same
    10.
    发明专利
    Light-emitting element and manufacturing method of the same 审中-公开
    发光元件及其制造方法

    公开(公告)号：JP2013074002A

    公开(公告)日：2013-04-22

    申请号：JP2011210355

    申请日：2011-09-27

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： KODA RINTARO ,  WATANABE HIDEKI ,  KURAMOTO MASARU ,  KONO SHUNSUKE ,  MIYAJIMA TAKAO

    IPC: H01S5/22

    CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/0218 ,  H01S5/0655 ,  H01S5/2031 ,  H01S5/34333 ,  H01S5/50 ,  H01S2301/166

    Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting element having a high output, which can radiate light beams having a single mode.SOLUTION: The light-emitting element comprises: (a) a laminated structure 20 including a first compound semiconductor layer 21 having a first conductivity type, an active layer 23 composed of a compound semiconductor and a second compound semiconductor layer 22 having a second conductivity type, which are sequentially laminated on a base substance 20'; (b) a second electrode 32; and (c) a first electrode 31. The laminated structure 20 has a ridge stripe structure 20A including a part in a thickness direction of at least the second compound semiconductor layer 22. The first compound semiconductor layer 21 has a thickness of more than 0.6 μm. The first compound semiconductor layer 21 includes a high refractive index layer 24 formed therein, composed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material composing the first compound semiconductor layer 21.

    Abstract translation: 要解决的问题：提供具有高输出的发光元件，其可以辐射具有单一模式的光束。 解决方案：发光元件包括：（a）层压结构20，其包括具有第一导电类型的第一化合物半导体层21，由化合物半导体构成的有源层23和具有第二化合物半导体层22的第二化合物半导体层22 第二导电类型，其依次层压在基础物质20'上; （b）第二电极32; 和（c）第一电极31.层叠结构20具有包括至少第二化合物半导体层22的厚度方向的一部分的脊条结构20A.第一化合物半导体层21的厚度大于0.6μm 。 第一化合物半导体层21包括其中形成的折射率高于构成第一化合物半导体层21的化合物半导体材料的折射率的化合物半导体材料的高折射率层24.权利要求（ C）2013，JPO＆INPIT

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