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公开(公告)号:DE69710539T2
公开(公告)日:2002-10-31
申请号:DE69710539
申请日:1997-07-08
Applicant: SONY CORP
Inventor: MIYAJIMA TAKAO
IPC: H01L21/203 , H01L21/28 , H01L21/285 , H01L29/45 , H01L33/32 , H01L33/40 , H01L33/00
Abstract: There are provided an ohmic electrode capable of operating elements stably for a long period by making contact specific resistance smaller and also increasing thermal stability thereof and a method of forming the same. An electrode layer is formed on a p-type compound semiconductor layer composed of p-type GaN and so on through a contact layer composed of p-type GaN and so on. The contact layer is formed by an MBE method, and the hole density is set higher than that of the p-type compound semiconductor layer. The electrode layer is formed by laminating a transition metal layer composed of a transition metal other than gold or platinum, a platinum layer and a gold layer one after another and annealing the laminated layers thereafter. With this, the platinum layer is made to adhere closely to the p- type compound semiconductor layer by the transition metal layer while preventing gold from diffusing toward the p- type compound semiconductor layer with the platinum layer.
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公开(公告)号:DE69803721T2
公开(公告)日:2002-09-12
申请号:DE69803721
申请日:1998-05-22
Applicant: SONY CORP
Inventor: ASATSUMA TSUNENORI , YANASHIMA KATSUNORI , MIYAJIMA TAKAO
IPC: H01L21/203 , H01L21/205 , H01L29/205 , H01L29/207 , H01L33/32 , H01S5/00 , H01S5/323 , H01L33/00
Abstract: A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of the first and second layers is thin, the stacked layers as a whole have properties of p-type AlGaN mixed crystal although the first layers do not include Mg and the second layers do not include Al. An Al source and a Mg source are temporally separated to be introduced in a stacking process. A reaction between the Al source and Mg source which may interfere desirable crystal growth is thereby prevented. Crystals of good quality are thus grown and electrical conductivity is thereby improved.
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公开(公告)号:DE69803721D1
公开(公告)日:2002-03-21
申请号:DE69803721
申请日:1998-05-22
Applicant: SONY CORP
Inventor: ASATSUMA TSUNENORI , YANASHIMA KATSUNORI , MIYAJIMA TAKAO
IPC: H01L21/203 , H01L21/205 , H01L29/205 , H01L29/207 , H01L33/32 , H01S5/00 , H01S5/323 , H01L33/00
Abstract: A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of the first and second layers is thin, the stacked layers as a whole have properties of p-type AlGaN mixed crystal although the first layers do not include Mg and the second layers do not include Al. An Al source and a Mg source are temporally separated to be introduced in a stacking process. A reaction between the Al source and Mg source which may interfere desirable crystal growth is thereby prevented. Crystals of good quality are thus grown and electrical conductivity is thereby improved.
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公开(公告)号:DE69705458D1
公开(公告)日:2001-08-09
申请号:DE69705458
申请日:1997-04-21
Applicant: SONY CORP , BAIKOWSKI JAPAN CO
Inventor: MIYAJIMA TAKAO , BELLEGO YANN LE , ITO TAKASHI
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公开(公告)号:DE69313033T2
公开(公告)日:1998-03-12
申请号:DE69313033
申请日:1993-06-18
Applicant: SONY CORP
Inventor: IKEDA MASAO , ITO SATOSHI , IOCHI YOSHINO , MIYAJIMA TAKAO , OZAWA MASAFUMI , AKIMOTO KATSUHIRO , ISHIBASHI AKIRA , HIEI FUTOSHI
IPC: H01L29/15 , H01L21/44 , H01L33/06 , H01L33/28 , H01L33/40 , H01S5/042 , H01S5/30 , H01S5/327 , H01S5/347 , H01S3/025 , H01S3/19 , H01L33/00 , H01L31/0352
Abstract: A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer (2), an active layer (3), a p-type ZnMgSSe cladding layer (4), a p-type ZnSe contact layer (5) and a p-type ZnTe contact layer (6) which are stacked in this sequence on an n-type GaAs substrate (1). A p-side electrode (7) is provided on the p-type ZnTe contact layer (6). An n-side electrode (8) is provided on the back surface of the n-type GaAs substrate (1). A maltiquantum well layer (9) comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer (5) along the junction interface between the p-type ZnSe contact layer (5) and the p-type ZnTe contact layer (6). Holes injected from the p-side electrode (7) pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer (9).
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公开(公告)号:DE69803721T3
公开(公告)日:2011-06-09
申请号:DE69803721
申请日:1998-05-22
Applicant: SONY CORP
Inventor: ASATSUMA TSUNENORI , YANASHIMA KATSUNORI , MIYAJIMA TAKAO
IPC: H01L33/00 , H01L21/203 , H01L21/205 , H01L29/205 , H01L29/207 , H01L33/32 , H01S5/00 , H01S5/323
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公开(公告)号:DE69705458T2
公开(公告)日:2002-04-18
申请号:DE69705458
申请日:1997-04-21
Applicant: SONY CORP , BAIKOWSKI JAPAN CO
Inventor: MIYAJIMA TAKAO , BELLEGO YANN LE , ITO TAKASHI
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公开(公告)号:DE69710539D1
公开(公告)日:2002-03-28
申请号:DE69710539
申请日:1997-07-08
Applicant: SONY CORP
Inventor: MIYAJIMA TAKAO
IPC: H01L21/203 , H01L21/28 , H01L21/285 , H01L29/45 , H01L33/32 , H01L33/40 , H01L33/00
Abstract: There are provided an ohmic electrode capable of operating elements stably for a long period by making contact specific resistance smaller and also increasing thermal stability thereof and a method of forming the same. An electrode layer is formed on a p-type compound semiconductor layer composed of p-type GaN and so on through a contact layer composed of p-type GaN and so on. The contact layer is formed by an MBE method, and the hole density is set higher than that of the p-type compound semiconductor layer. The electrode layer is formed by laminating a transition metal layer composed of a transition metal other than gold or platinum, a platinum layer and a gold layer one after another and annealing the laminated layers thereafter. With this, the platinum layer is made to adhere closely to the p- type compound semiconductor layer by the transition metal layer while preventing gold from diffusing toward the p- type compound semiconductor layer with the platinum layer.
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公开(公告)号:DE69313033D1
公开(公告)日:1997-09-18
申请号:DE69313033
申请日:1993-06-18
Applicant: SONY CORP
Inventor: IKEDA MASAO , ITO SATOSHI , IOCHI YOSHINO , MIYAJIMA TAKAO , OZAWA MASAFUMI , AKIMOTO KATSUHIRO , ISHIBASHI AKIRA , HIEI FUTOSHI
IPC: H01L29/15 , H01L21/44 , H01L33/06 , H01L33/28 , H01L33/40 , H01S5/042 , H01S5/30 , H01S5/327 , H01S5/347 , H01S3/025 , H01S3/19 , H01L33/00 , H01L31/0352
Abstract: A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer (2), an active layer (3), a p-type ZnMgSSe cladding layer (4), a p-type ZnSe contact layer (5) and a p-type ZnTe contact layer (6) which are stacked in this sequence on an n-type GaAs substrate (1). A p-side electrode (7) is provided on the p-type ZnTe contact layer (6). An n-side electrode (8) is provided on the back surface of the n-type GaAs substrate (1). A maltiquantum well layer (9) comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer (5) along the junction interface between the p-type ZnSe contact layer (5) and the p-type ZnTe contact layer (6). Holes injected from the p-side electrode (7) pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer (9).
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10.
公开(公告)号:JP2013074002A
公开(公告)日:2013-04-22
申请号:JP2011210355
申请日:2011-09-27
Inventor: KODA RINTARO , WATANABE HIDEKI , KURAMOTO MASARU , KONO SHUNSUKE , MIYAJIMA TAKAO
IPC: H01S5/22
CPC classification number: H01S5/22 , B82Y20/00 , H01S5/0218 , H01S5/0655 , H01S5/2031 , H01S5/34333 , H01S5/50 , H01S2301/166
Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting element having a high output, which can radiate light beams having a single mode.SOLUTION: The light-emitting element comprises: (a) a laminated structure 20 including a first compound semiconductor layer 21 having a first conductivity type, an active layer 23 composed of a compound semiconductor and a second compound semiconductor layer 22 having a second conductivity type, which are sequentially laminated on a base substance 20'; (b) a second electrode 32; and (c) a first electrode 31. The laminated structure 20 has a ridge stripe structure 20A including a part in a thickness direction of at least the second compound semiconductor layer 22. The first compound semiconductor layer 21 has a thickness of more than 0.6 μm. The first compound semiconductor layer 21 includes a high refractive index layer 24 formed therein, composed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material composing the first compound semiconductor layer 21.
Abstract translation: 要解决的问题:提供具有高输出的发光元件,其可以辐射具有单一模式的光束。 解决方案:发光元件包括:(a)层压结构20,其包括具有第一导电类型的第一化合物半导体层21,由化合物半导体构成的有源层23和具有第二化合物半导体层22的第二化合物半导体层22 第二导电类型,其依次层压在基础物质20'上; (b)第二电极32; 和(c)第一电极31.层叠结构20具有包括至少第二化合物半导体层22的厚度方向的一部分的脊条结构20A.第一化合物半导体层21的厚度大于0.6μm 。 第一化合物半导体层21包括其中形成的折射率高于构成第一化合物半导体层21的化合物半导体材料的折射率的化合物半导体材料的高折射率层24.权利要求( C)2013,JPO&INPIT
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