公开(公告)号：EP2615640A4

公开(公告)日：2014-01-29

申请号：EP11823418

申请日：2011-08-25

Applicant: SONY CORP

Inventor： OZAWA KEN ,  OOKA YUTAKA ,  OTANI EIJI

IPC: G02B5/30 ,  H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629

Abstract: The present invention relates to a solid-state imaging element which is able to provide the solid-state imaging element having a polarizing element having a simple configuration and structure based on a wire grid polarizer technique, a solid-state imaging device, an imaging apparatus, and a method of manufacturing a polarizing element. The solid-state imaging device includes a plurality of solid-state imaging elements 41 each including a photoelectric conversion element 61 and a polarizing element 70 formed on the light incident side of the photoelectric conversion element 61. The solid-state imaging device includes two or more kinds of polarizing elements 70 having different polarization orientations. Each polarizing element has a stacked structure in which a stripe-shaped reflecting layer 71, an insulating layer 72 formed on the reflecting layer 71, and a light absorption layer 73 made up of a plurality of segments 73' formed on the insulating layer 72 in a separated state are stacked in that order from the photoelectric conversion element side.

公开(公告)号：EP1589373A4

公开(公告)日：2007-05-16

申请号：EP04705925

申请日：2004-01-28

Applicant: SONY CORP

Inventor： OZAWA KEN

IPC: G02B5/00 ,  G02B3/00 ,  G03F1/68 ,  G03F1/70 ,  G03F1/14 ,  G03F7/20

CPC classification number: G03F7/70466 ,  G03F1/50 ,  G03F1/70

Abstract: An exposing mask capable of obtaining a sufficient gradient with a simple structure and forming a 3-D shape by exposing. An exposing mask (M) used in an exposure system (S), wherein a plurality of pattern blocks, each comprising a pair of a light shielding pattern for shielding light emitted from the exposure system (S) and a transmission pattern for transmitting this light, are continuously arranged, and they are provided at a constant pitch with a ratio between a light shielding pattern and a transmission pattern gradually varying.

Abstract translation: 曝光掩模以简单的结构形成三维形状，并通过曝光获得足够数量的灰度。 在曝光装置（S）中使用的曝光掩模（M）中，本发明被设置为使得由一对遮光图案构成的多个图案块，其阻挡从曝光装置（S）发射的光和 连续图案块的间距恒定并且遮光图案与透射图案的比例逐渐变化的情况下，连续布置透射光的透射图案。

公开(公告)号：JP2010066779A

公开(公告)日：2010-03-25

申请号：JP2009290038

申请日：2009-12-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN ,  INOUE KAZUHARU

IPC: G02B6/13

Abstract: PROBLEM TO BE SOLVED: To provide a method of accurately manufacturing an optical waveguide having high accuracy and a high accumulation only by a lithography technique. SOLUTION: The method of manufacturing the optical waveguide 1 comprising cores 4 on which light input and output faces 2, 3 are formed in a diagonal shape and a clad 5 includes: a step in which a plurality of rectangular pattern openings 12 corresponding to the cores 4 are arranged side by side on a mask 13 used for exposure of a photosensitive material used for forming the cores 4; a step in which a plurality of exposures are repeated while moving the exposing position of the mask 13 with respect to the photosensitive material in the longitudinal direction of the cores 4 to make an exposed pattern corresponding to the diagonal face shape of the light input and output faces; a step in which a molding mold is manufactured by etching a mold material placed under the photosensitive material mask obtained by developing the multiply exposed photosensitive material; and a step in which the cores are formed by using the molding mold. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种通过光刻技术精确地制造具有高精度和高积累的光波导的方法。 解决方案：制造光波导1的方法，其包括光输入和输出面2,3形成为对角线的形状的芯4和包层5，其包括：对应于多个矩形图案开口12的步骤 芯4并排设置在用于曝光用于形成芯4的感光材料的掩模13上; 在使芯片4的纵向相对于感光材料移动掩模13的曝光位置而重复多次曝光的步骤，以形成与光输入和输出的对角线形状对应的曝光图案 面对; 通过蚀刻放置在通过显影多次曝光的感光材料获得的感光材料掩模下的模具材料来制造模制品的步骤; 以及通过使用成型模具形成芯的步骤。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2007220847A

公开(公告)日：2007-08-30

申请号：JP2006038805

申请日：2006-02-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MATSUZAWA NOBUYUKI ,  BOONTARIKA THUNNAKART ,  OZAWA KEN ,  KUROBE TOSHIHIRO ,  WATANABE YOKO

IPC: H01L21/027 ,  G02B1/11 ,  G03F7/11 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance on an interface between a resist layer and a silicon semiconductor substrate, even if exposure light is made incident obliquely by one layer in a liquid immersion lithography technique, and to provide an exposure method. SOLUTION: The double layer structure antireflection film is used in exposing a resist layer in an exposure system having a wavelength of 190-195 nm and having a numerical aperture of 1.2-1.3, and is formed between the resist layer and a silicon nitride film formed on the surface of the silicon semiconductor substrate. When complex refractive indexes N 1 , N 2 of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i, film thicknesses of the upper layer and lower layer are d 1 , d 2 and a predetermined combination is selected as the combination of values [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], n 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy the following relation: ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：即使在液浸式光刻技术中使曝光光倾斜地入射一层，提供能够充分降低抗蚀剂层和硅半导体衬底之间的界面上的反射率的抗反射膜，以及 提供曝光方法。 解决方案：双层结构抗反射膜用于在波长为190-195nm并且数值孔径为1.2-1.3的曝光系统中曝光抗蚀剂层，并且形成在抗蚀剂层和硅之间 形成在硅半导体衬底的表面上的氮化物膜。 当复合折射率N 1 时，构成防反射膜的上层和下层的N 2 由表达式表示; N 1 = n 1 i，N 2 = n 2 -k 2，上层和下层的膜厚度为d SB> 1 ，d 2 ，并且选择预定的组合作为组合 的值[n 10 ，k 10 ，d 10 ，20 SB>，d 20 ，n 1 ，k 1 ，d 1 / SB>，k 2 ，d 2 满足以下关系：ä（n 1 -n 10 ） /（N 1M -n 10 ）} 2 + A（K 1 -k 10 < / SB>）/（K 1M -k 10 ）} 2 + A（D 1 -d < SB> 10 ）/（D 1M -d 10 ）} 2 + A（N 2 -n 20 ）/（N 2米 -n 20 ）} 2 + A（K 2 -k 20 ）/（K 2米 -k 20 ）} 2 + A（ ð 2 -d 20 ）/（D 2米 -d 20 ）} 2 ≤1。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007220846A

公开(公告)日：2007-08-30

申请号：JP2006038804

申请日：2006-02-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MATSUZAWA NOBUYUKI ,  BOONTARIKA THUNNAKART ,  OZAWA KEN ,  KUROBE TOSHIHIRO ,  WATANABE YOKO

IPC: H01L21/027 ,  G02B1/11 ,  G03F7/11 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance on an interface between a resist layer and a silicon semiconductor substrate, even if exposure light is made incident obliquely by one layer in a liquid immersion lithography technique, and to provide an exposure method. SOLUTION: The double layer structure antireflection film is used in exposing a resist layer in an exposure system having a wavelength of 190-195 nm and having a numerical aperture of 1.1-1.2, and is formed between the resist layer and a silicon nitride film formed on the surface of the silicon semiconductor substrate. When complex refractive indexes N 1 , N 2 of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i, film thicknesses of the upper layer and lower layer are d 1 , d 2 and a predetermined combination is selected as the combination of values [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], n 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy the following relation: ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：即使在液浸式光刻技术中使曝光光倾斜地入射一层，提供能够充分降低抗蚀剂层和硅半导体衬底之间的界面上的反射率的抗反射膜，以及 提供曝光方法。 解决方案：双层结构抗反射膜用于在波长为190-195nm并且数值孔径为1.1-1.2的曝光系统中曝光抗蚀剂层，并且形成在抗蚀剂层和硅之间 形成在硅半导体衬底的表面上的氮化物膜。 当复合折射率N 1 时，构成防反射膜的上层和下层的N 2 由表达式表示; N 1 = n 1 i，N 2 = n 2 -k 2，上层和下层的膜厚度为d SB> 1 ，d 2 ，并且选择预定的组合作为组合 的值[n 10 ，k 10 ，d 10 ，20 SB>，d 20 ，n 1 ，k 1 ，d 1 / SB>，k 2 ，d 2 满足以下关系：ä（n 1 -n 10 ） /（N 1M -n 10 ）} 2 + A（K 1 -k 10 < / SB>）/（K 1M -k 10 ）} 2 + A（D 1 -d < SB> 10 ）/（D 1M -d 10 ）} 2 + A（N 2 -n 20 ）/（N 2米 -n 20 ）} 2 + A（K 2 -k 20 ）/（K 2米 -k 20 ）} 2 + A（ ð 2 -d 20 ）/（D 2米 -d 20 ）} 2 ≤1。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007220845A

公开(公告)日：2007-08-30

申请号：JP2006038803

申请日：2006-02-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MATSUZAWA NOBUYUKI ,  BOONTARIKA THUNNAKART ,  OZAWA KEN ,  KUROBE TOSHIHIRO ,  WATANABE YOKO

IPC: H01L21/027 ,  G03F7/11 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance on an interface between a resist layer and a silicon semiconductor substrate, even if exposure light is made incident obliquely by one layer in a liquid immersion lithography technique, and to provide an exposure method. SOLUTION: The double layer structure antireflection film is used in exposing a resist layer in an exposure system having a wavelength of 190-195 nm and having a numerical aperture of 1.0-1.1, and is formed between the resist layer and a silicon nitride film formed on the surface of the silicon semiconductor substrate. When complex refractive indexes N 1 , N 2 of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i, film thicknesses of the upper layer and lower layer are d 1 , d 2 and a predetermined combination is selected as the combination of values [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], n 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy the following relation: ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：即使在液浸式光刻技术中使曝光光倾斜地入射一层，提供能够充分降低抗蚀剂层和硅半导体衬底之间的界面上的反射率的抗反射膜，以及 提供曝光方法。 解决方案：双层结构抗反射膜用于在波长为190-195nm并且数值孔径为1.0-1.1的曝光系统中曝光抗蚀剂层，并形成在抗蚀剂层和硅之间 形成在硅半导体衬底的表面上的氮化物膜。 当复合折射率N 1 时，构成防反射膜的上层和下层的N 2 由表达式表示; N 1 = n 1 i，N 2 = n 2 -k 2，上层和下层的膜厚度为d SB> 1 ，d 2 ，并且选择预定的组合作为组合 的值[n 10 ，k 10 ，d 10 ，20 SB>，d 20 ，n 1 ，k 1 ，d 1 / SB>，k 2 ，d 2 满足以下关系：ä（n 1 -n 10 ） /（N 1M -n 10 ）} 2 + A（K 1 -k 10 < / SB>）/（K 1M -k 10 ）} 2 + A（D 1 -d < SB> 10 ）/（D 1M -d 10 ）} 2 + A（N 2 -n 20 ）/（N 2米 -n 20 ）} 2 + A（K 2 -k 20 ）/（K 2米 -k 20 ）} 2 + A（ ð 2 -d 20 ）/（D 2米 -d 20 ）} 2 ≤1。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006269462A

公开(公告)日：2006-10-05

申请号：JP2005081004

申请日：2005-03-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN

IPC: H01L21/027 ,  G02B3/00 ,  G02B5/30 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide an exposure apparatus, having an illumination system for imparting an arbitrary polarization distribution to the light for illuminating masks.
SOLUTION: The exposure apparatus comprises a fly-eye lens array 104 arranged with fly eyes in a matrix form, in order to equalize the intensity of light being emitted from a light source, and an optical rotation element array 102, consisting of a plurality of optical rotation elements, arranged in correspondence with respective lens element of the fly-eye lens array 104, while having an optical axis parallel with the traveling direction of the light emitted from the light source and making the oscillation plane of passing light rotate.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供一种曝光装置，其具有用于向用于照射掩模的光赋予任意偏振分布的照明系统。 解决方案：曝光装置包括以矩阵形式布置有飞眼的蝇眼透镜阵列104，以便均衡从光源发射的光的强度和由光学元件阵列102组成的光旋转元件阵列102 多个光学旋转元件，其与飞眼透镜阵列104的相应透镜元件相对应地布置，同时具有与从光源发射的光的行进方向平行的光轴，并且使经过的光的振荡平面旋转 。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2003188087A

公开(公告)日：2003-07-04

申请号：JP2001388984

申请日：2001-12-21

Applicant: SONY CORP

Inventor： OZAWA KEN

IPC: G02B19/00 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To conquer the difficulty of mask production while enhancing resolution in the exposure of a gate line, or the like, of a severe dimensional rule when a desired pattern is obtained by projection mapping using a phase shift mask. SOLUTION: In an aligner arranged to obtain a desired pattern by projection mapping using a phase shift mask 10, a polarization condition selecting unit 20 for selecting the polarization direction of illumination light with respect to the phase shift mask 10 is provided in parallel with the direction of the compositional side of a pattern formed on the phase shift mask 10 at the time of projection mapping. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003107671A

公开(公告)日：2003-04-09

申请号：JP2001297510

申请日：2001-09-27

Applicant: SONY CORP

Inventor： OZAWA KEN

IPC: G01N21/956 ,  G03F1/30 ,  G03F1/68 ,  G03F1/84 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a method for determining a defect specification in a phase shift mask. SOLUTION: A table of correlation between three-dimensional information of a glass defect 11 of the phase shift mask 10 and a CD (minute dimension) error of a transfer pattern is created and a specification in which the glass defect 11 is allowed is determined based on the table.

公开(公告)号：JP2013088378A

公开(公告)日：2013-05-13

申请号：JP2011231470

申请日：2011-10-21

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MATSUZAWA NOBUYUKI ,  MAEDA KENSAKU ,  MORIYA YUSUKE ,  OZAWA KEN

IPC: G01N21/64 ,  G01N33/53 ,  G01N33/543 ,  H01L27/14 ,  H01L27/146

CPC classification number: C12Q1/6834 ,  G01N21/6454 ,  G01N33/54373 ,  G01N33/582

Abstract: PROBLEM TO BE SOLVED: To provide a chemical sensor, a chemical sensor module, a biomolecule detection device, and a biomolecule detection method that enable biomolecules to be detected with high precision.SOLUTION: A chemical sensor of the present invention comprises a substrate, an on-chip lens, and a planarization layer. The substrate has a plurality of photodiodes formed thereon and arranged in a flat shape. The on-chip lens is provided on the substrate and condenses incident light on the photodiodes. The planarization layer covers and planarizes the on-chip lens and forms a probe support surface for supporting a probe material.

Abstract translation: 要解决的问题：提供能够以高精度检测生物分子的化学传感器，化学传感器模块，生物分子检测装置和生物分子检测方法。 解决方案：本发明的化学传感器包括基板，片上透镜和平坦化层。 基板具有形成在其上的多个光电二极管并且被布置成平坦的形状。 片上透镜设置在基板上，并将入射光聚光在光电二极管上。 平坦化层覆盖并平面化片上透镜并形成用于支撑探针材料的探针支撑表面。 版权所有（C）2013，JPO＆INPIT