公开(公告)号：WO2015111419A3

公开(公告)日：2015-10-08

申请号：PCT/JP2015000329

申请日：2015-01-26

Applicant: SONY CORP

Inventor： YAMAMOTO ATSUSHI ,  MIYAZAWA SHINJI ,  OOKA YUTAKA ,  MAEDA KENSAKU ,  MORIYA YUSUKE ,  OGAWA NAOKI ,  FUJII NOBUTOSHI ,  FURUSE SHUNSUKE ,  NAGATA MASAYA ,  YAMAMOTO YUICHI

IPC: H01L27/146

CPC classification number: H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2224/11

Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

Abstract translation: 本技术涉及防止水分侵入芯片的技术。 各种示例性实施例包括图像传感器，其包括：基板; 层叠在所述基板上的多个层; 所述多个层包括在所述光电二极管层的表面上形成有多个光电二极管的光电二极管层; 所述多个层包括至少一个具有形成为使得所述至少一个层的一部分被挖出的凹槽的层; 以及在光电二极管层的上方形成并形成在沟槽内的透明树脂层。 本技术可以应用于例如图像传感器。

公开(公告)号：EP2615640A4

公开(公告)日：2014-01-29

申请号：EP11823418

申请日：2011-08-25

Applicant: SONY CORP

Inventor： OZAWA KEN ,  OOKA YUTAKA ,  OTANI EIJI

IPC: G02B5/30 ,  H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629

Abstract: The present invention relates to a solid-state imaging element which is able to provide the solid-state imaging element having a polarizing element having a simple configuration and structure based on a wire grid polarizer technique, a solid-state imaging device, an imaging apparatus, and a method of manufacturing a polarizing element. The solid-state imaging device includes a plurality of solid-state imaging elements 41 each including a photoelectric conversion element 61 and a polarizing element 70 formed on the light incident side of the photoelectric conversion element 61. The solid-state imaging device includes two or more kinds of polarizing elements 70 having different polarization orientations. Each polarizing element has a stacked structure in which a stripe-shaped reflecting layer 71, an insulating layer 72 formed on the reflecting layer 71, and a light absorption layer 73 made up of a plurality of segments 73' formed on the insulating layer 72 in a separated state are stacked in that order from the photoelectric conversion element side.

公开(公告)号：EP2980849A4

公开(公告)日：2017-03-29

申请号：EP14773969

申请日：2014-03-14

Applicant: SONY CORP

Inventor： OOKA YUTAKA ,  MIYAZAWA SHINJI ,  MAEDA KENSAKU ,  YAMAMOTO ATSUSHI

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N9/07

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: Provided is a solid-state image pickup element including: a sensor unit configured to generate an electrical signal in response to incident light; a color filter covering the sensor unit; and a lens configured to concentrate the incident light into the sensor unit via the color filter and formed by a laminated film made of a predetermined lens material. The lens is formed on the color filter without providing a planarization layer for removing a difference in level in the color filter.

公开(公告)号：JP2007220738A

公开(公告)日：2007-08-30

申请号：JP2006036881

申请日：2006-02-14

Applicant: Sony Corp ,  ソニー株式会社

Inventor： INOUE KEIJI ,  KATO YOSHINORI ,  TAKAHASHI SHINGO ,  ARAKAWA SHINICHI ,  OOKA YUTAKA ,  KOMAI HISANORI ,  FUKUURA TAKEZO

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can improve yield and wiring reliability by allowing a manganese compound film to remain on the surface of a copper film.
SOLUTION: The method of manufacturing a semiconductor device according to this embodiment has a step of forming an interlayer insulating film 4 on a substrate 1; a step of forming openings 4a, 4b on the interlayer insulating film 4; a step of forming a first manganese-containing copper film for covering the internal walls of the openings 4a, 4b; a step of executing first annealing processing to form a manganese compound film 8 on the surface of the interlayer insulating film 4; a step of forming a second manganese-containing copper film 6-2 for covering the internal walls of the openings 4a, 4b on the manganese compound film 8; a step of forming a copper film 7-2 for filling the openings 4a, 4b; a step of removing the copper film 7-2 formed on the interlayer insulating film 4; and a step of step of executing second annealing processing to form manganese compound films 8, 10 on the interface between the copper film 7-2 and the interlayer insulating film 4 and on the surface of the copper film 7-2.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供一种半导体器件的制造方法，其可以通过使锰化合物膜保留在铜膜的表面上来提高产率和布线可靠性。 解决方案：根据本实施例的制造半导体器件的方法具有在衬底1上形成层间绝缘膜4的步骤; 在层间绝缘膜4上形成开口部4a，4b的工序; 形成用于覆盖开口4a，4b的内壁的第一含锰铜膜的步骤; 在层间绝缘膜4的表面上进行第一退火处理以形成锰化合物膜8的步骤; 形成用于覆盖锰化合物膜8上的开口4a，4b的内壁的第二含锰铜膜6-2的步骤; 形成用于填充开口4a，4b的铜膜7-2的步骤; 去除形成在层间绝缘膜4上的铜膜7-2的步骤; 以及执行第二退火处理以在铜膜7-2和层间绝缘膜4之间的界面上以及铜膜7-2的表面上形成锰化合物膜8,10的步骤的步骤。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007081113A

公开(公告)日：2007-03-29

申请号：JP2005266865

申请日：2005-09-14

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OOKA YUTAKA

IPC: H01L21/3205 ,  H01L21/768

CPC classification number: H01L21/76873 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76864

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can increase a wiring flatness even in the absence of a barrier metal. SOLUTION: The method for manufacturing a semiconductor device comprising the steps of forming an interlayer insulating film 2 on a semiconductor substrate 1, forming a metal mask 3 including a metal on the interlayer insulating film 2, forming a pattern groove 2a in the metal mask 3 and the interlayer insulating film 2 by etching part of the metal mask 3 and the interlayer insulating film 2, forming a conductive layer 5 on the interlayer insulating film 2 so as to be buried in the pattern groove 2a, and polishing the excessive conductive layer 5 on the interlayer insulating film 2 so as to be left in the pattern groove 2a. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供即使在不存在阻挡金属的情况下也能够提高布线平坦度的半导体装置的制造方法。 解决方案：半导体器件的制造方法，包括以下步骤：在半导体衬底1上形成层间绝缘膜2，在层间绝缘膜2上形成包含金属的金属掩模3，在其中形成图案槽2a 金属掩模3和层间绝缘膜2，通过蚀刻金属掩模3和层间绝缘膜2的一部分，在层间绝缘膜2上形成导电层5，以埋入图案凹槽2a中，并抛光过量 导电层5在层间绝缘膜2上，以留在图案槽2a中。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2012142501A

公开(公告)日：2012-07-26

申请号：JP2011000805

申请日：2011-01-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OOKA YUTAKA

IPC: H01L27/14 ,  G02B5/30

CPC classification number: H01L31/02327 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

Abstract: PROBLEM TO BE SOLVED: To provide a solid-state image pickup device which is provided with a wire grid polarizer and has excellent reliability.SOLUTION: A manufacturing method of a solid-state image pickup device includes a step of preparing a photoelectric conversion element on which a photoelectric conversion part was formed and a step of forming an insulating layer 26 on a surface of the photoelectric conversion element. The manufacturing method also includes a step of forming a wire grid polarizer 30 on a support base 34. The method further includes a step of bonding a formation surface of the wire grid polarizer 30 of the support base 34 onto the insulating layer 26 on the surface of the photoelectric conversion element and a step of removing the support base 34 from the wire grid polarizer 30.

Abstract translation: 要解决的问题：提供一种设置有线栅偏振器的固态图像拾取装置，并且具有优异的可靠性。 解决方案：固态摄像装置的制造方法包括制备其上形成有光电转换部件的光电转换元件的步骤和在光电转换元件的表面上形成绝缘层26的步骤 。 该制造方法还包括在支撑基座34上形成线栅偏振器30的步骤。该方法还包括将支撑基座34的线栅偏振器30的形成表面接合到表面上的绝缘层26上的步骤 以及从线栅偏振器30去除支撑基座34的步骤。版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2006210508A

公开(公告)日：2006-08-10

申请号：JP2005018367

申请日：2005-01-26

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KOMAI HISANORI ,  KANEMURA RYUICHI ,  OOKA YUTAKA

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76874 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device that is improved in tolerance to electromigration, and also to provide its manufacturing method. SOLUTION: In an interlayer insulation film 10 on a first metal interconnection 8, a connection hole 10a which reaches the first metal interconnection 8 and an interconnection trench 10b are formed. Even if a cap layer 9a is formed on the first metal interconnection 8, in advance, part or all of the cap layer 9a inside the connection hole 10a is removed, when the connection hole 10a is formed. After forming the connection hole 10a, a cap layer 9b is selectively formed only on the bottom of the connection hole 10a. After forming the cap layer 9b, the connection hole 10a and the interconnection trench 10b are embedded with a barrier metal layer 17 and a metal layer 18, to form a contact 19 and a second metal interconnection 20. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种提高对电迁移的耐受性的半导体器件，并提供其制造方法。 解决方案：在第一金属互连8上的层间绝缘膜10中，形成到达第一金属互连8的连接孔10a和互连沟槽10b。 即使在第一金属布线8上形成盖层9a，也可以预先形成连接孔10a内的盖层9a的一部分或全部，形成连接孔10a。 在形成连接孔10a之后，仅在连接孔10a的底部上选择形成覆盖层9b。 在形成盖层9b之后，连接孔10a和互连沟槽10b内嵌有阻挡金属层17和金属层18，以形成触点19和第二金属互连20。（C） 2006年，JPO＆NCIPI

公开(公告)号：JP2003243393A

公开(公告)日：2003-08-29

申请号：JP2002040554

申请日：2002-02-18

Applicant: SONY CORP

Inventor： OOKA YUTAKA ,  SEGAWA YUJI ,  HORIKOSHI HIROSHI

IPC: H01L21/28 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device, and its fabricating method, in which diffusion of copper is prevented surely. SOLUTION: In the inventive semiconductor device, a cap film having a copper diffusion preventive function is formed on a metallization containing copper by substituting palladium for copper on the surface of the metallization. In the inventive method for fabricating a semiconductor device provided with a cap film having a copper diffusion preventive function formed on a metallization containing copper, the cap film having a copper diffusion preventive function is formed on a metallization containing copper by substituting palladium for copper on the surface of the metallization. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2008010534A

公开(公告)日：2008-01-17

申请号：JP2006177690

申请日：2006-06-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OOKA YUTAKA

IPC: H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To easily form a wiring having an air gap structure not depending on dense/coarse performance of a wiring without adding a complicated/long-time process.
SOLUTION: A semiconductor device 1 is provided with cavities 20 formed by removing a first insulating film formed on a substrate; a second insulating film 13 positioned over the cavity 20 and formed on the first insulating film; and a wiring 17 formed via a barrier film 15 so as to reach the substrate from the wiring trench 14 formed on the second insulating film 13. The semiconductor device 1 is provided with a slit 18 continuing to the cavity 20 on the side wall of the wiring 17. The slit 18 reaching the first insulating film is formed on the side wall of the wiring 17 in a process of removing excessive materials of the second insulating film 13, and the first insulating film is removed from the slit 18 to form the cavity 20 on the region where the film is removed.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了容易地形成具有不依赖于布线的粗/粗性能的气隙结构的布线，而不需要增加复杂/长时间的工艺。 解决方案：半导体器件1设置有通过去除形成在衬底上的第一绝缘膜而形成的空腔20; 位于空腔20上并形成在第一绝缘膜上的第二绝缘膜13; 以及经由阻挡膜15形成的布线17，以从形成在第二绝缘膜13上的布线沟槽14到达基板。半导体器件1设置有狭缝18，该狭缝18连续到位于第二绝缘膜13的侧壁上的空腔20 布线17.到达第一绝缘膜的狭缝18在除去第二绝缘膜13的多余材料的过程中形成在布线17的侧壁上，并且第一绝缘膜从狭缝18中移除以形成空腔 20在电影被删除的地区。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2003243499A

公开(公告)日：2003-08-29

申请号：JP2002039123

申请日：2002-02-15

Applicant: SONY CORP

Inventor： OOKA YUTAKA ,  NOGAMI TAKESHI ,  SEGAWA YUJI ,  HORIKOSHI HIROSHI

IPC: H01L21/768

Abstract: PROBLEM TO BE SOLVED: To obtain high reliability by surely preventing the oxidation of a cap film without causing a rise in a specific inductive capacity and to facilitate rapid process treatment without increasing the number of processes in multilayering wirings. SOLUTION: A cap film 8 with a Cu diffusion prevention function is selectively formed on metal wiring 2 comprising Cu embedded in a groove 4 of an insulation film 3. An insulation film 9 comprising an insulation material which does not contain oxygen is formed at least on the cap film 8. The method has a process for selectively forming the cap film with the Cu diffusion prevention function on metal wiring comprising Cu embedded in a groove of an inter- layer insulation film and a process for forming an insulation film comprising an insulation material which does not contain oxygen at least on the cap film. COPYRIGHT: (C)2003,JPO