公开(公告)号：JP2002217193A

公开(公告)日：2002-08-02

申请号：JP2001010442

申请日：2001-01-18

Applicant: SONY CORP

Inventor： SAITO MASAKI

IPC: H01L21/28 ,  H01L21/318 ,  H01L21/336 ,  H01L21/768 ,  H01L23/522 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having stable characteristics, which reduces hydrogen content of a silicon nitride film and decreases temperature for forming the film so that penetration of impurities through a silicon substrate and silicide coagulation are eliminated. SOLUTION: The method for manufacturing the semiconductor device comprises a step for forming the silicon nitride film, where the silicon nitride film e.g. a gate side wall 14 and an etching stopper layer 20 are formed by a catalyst CVD method.

公开(公告)号：JPH113885A

公开(公告)日：1999-01-06

申请号：JP15549397

申请日：1997-06-12

Applicant: SONY CORP

Inventor： SAITO MASAKI

IPC: H01L21/205 ,  H01L21/31

Abstract: PROBLEM TO BE SOLVED: To provide a method of monitoring CVD reaction capable of detecting variation of underlying-layer dependence varied by the condition of the CVD reaction, and suppressing the lowering of yield and reliability. SOLUTION: An insulation film is formed on a first wafer by the CVD reaction under constant reaction condition and its thickness is measured. Another insulation film is formed on a second wafer having different surface substance from that of the first wafer under the same CVD reaction condition using the same material, its thickness is measured. The thickness ratio of an insulation film of the first wafer to the second wafer is calculated. When the thickness ratio of an insulation film of the first wafer to the second wafer is substantially constant under various CVD reaction condition, it is determined that the CVD reaction is conducted without any underlying-layer dependence.

公开(公告)号：JPH0831817A

公开(公告)日：1996-02-02

申请号：JP16090094

申请日：1994-07-13

Applicant: SONY CORP

Inventor： SAITO MASAKI

IPC: H01L21/31 ,  H01L21/316

Abstract: PURPOSE:To improve the quality of an obtained silicon oxide film and realize excellent film formation even when a silicon oxide film is further formed on the silicon oxide film through a TEOS-O3 process, for example, while an increase of the number of processing steps and addition/introduction of new facilities are suppressed. CONSTITUTION:When a silicon oxide film is formed on a substrate 1 through a reaction of an organic silicon source and oxidizing agent, the silicon oxide film is formed within a chamber 10 where a high-frequency voltage is applied, and after stopping the application of high-frequency voltage, a gas containing an organic gas containing silicon is introduced into the chamber 10 successively, or a gas containing an alcohol is introduced thereinto.

公开(公告)号：JPH0831816A

公开(公告)日：1996-02-02

申请号：JP16089994

申请日：1994-07-13

Applicant: SONY CORP

Inventor： SAITO MASAKI

IPC: H01L21/31 ,  H01L21/316

Abstract: PURPOSE:To provide a film formation method using an organic silicon source, a device therefor and a production method for semiconductor device by which the dependence of film formation on the base layer can be suppressed and the quality of the formed silicon oxide film be also improved while facility investment is suppressed without increasing the processing steps and adding/ introducing new facilities. CONSTITUTION:In a film formation method in which a silicon oxide film is formed through a reaction of an organic source such as TEOS, etc., and an ozone, when a silicon oxide film is initially formed on a substrate 4, an atmosphere gas within a chamber 2 for film formation is a gas containing an organic gas including a silicon but an ozone, or a gas containing an alcohol but an organic silicon source, and in the following stages, a silicon oxide film is formed on the substrate through a reaction of the organic silicon source and ozone in the same chamber.

公开(公告)号：JPH06310446A

公开(公告)日：1994-11-04

申请号：JP12211693

申请日：1993-04-27

Applicant: SONY CORP

Inventor： SAITO MASAKI

IPC: H01L21/205 ,  H01L21/31 ,  H01L21/316

Abstract: PURPOSE:To provide high film quality simultaneously with a high film forming speed by permitting the temperature of a substrate just after the film formation start to be different from the temperature of the substrate just before the completion of the film formation at the time of forming the thin film on the substrate. CONSTITUTION:Substrates 10 are placed on heaters 50-56 by a substrate chuck 62 and are chucked. Then, material gas is supplied from gas injectors 40-46 and thin films 12A are formed on the substrate 10. At that time, the temperature of the heaters 50-56 is set at approximately 350-400 deg.C and thick thin films 12A are formed at a high film forming speed. Then, the temperature is set at approximately 550-600 deg.C, more material gas is supplied and thin films 12B with thin thickness and excellent quality is formed on the surfaces of the thin films 12A. Thus, after forming the thick thin film at the relatively low temperature at the high film forming speed, the thin film with excellent film quality is formed on the surface of the thick thin film at the relatively high temperature.

公开(公告)号：JP2003109953A

公开(公告)日：2003-04-11

申请号：JP2001306153

申请日：2001-10-02

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA ,  SAITO MASAKI

IPC: H01L29/78 ,  H01L21/318

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a silicon nitride film exhibiting excellent reliability, and a method for forming a gate insulation film in which boron atoms can be prevented from being diffused from the gate electrode into a silicon semiconductor substrate, and a method for forming a gate insulation film. SOLUTION: The method for forming a silicon nitride film comprises a step for forming a silicon film on a basic material using a silicon compound gas containing no hydrogen as a material gas, and a step for supplying a nitrogen gas or a nitrogen compound gas containing no hydrogen above the silicon film and nitriding the silicon film by irradiating it with electromagnetic waves. A silicon nitride film exhibiting excellent reliability where hydrogen is not diffused from the silicon nitride film into other adjacent members can be formed using the silicon nitride film formed by this method.

公开(公告)号：JP2002203961A

公开(公告)日：2002-07-19

申请号：JP2000403168

申请日：2000-12-28

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA ,  SAITO MASAKI

IPC: C23C16/42 ,  C23C16/511 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To enhance reliability on a gate insulating film by preventing the diffusion of hydrogen to the gate insulating film, too, in making the gate insulating film the stack type of a silicon oxide film and a silicon nitride film so as to prevent boron atoms from diffusing to a silicon semiconductor substrate. SOLUTION: The stacked gate insulating film 44 of a silicon oxide film 42 and a silicon nitride film 43 is made through the process (A1) of forming the silicon oxide film 42 on the surface of an semiconductor layer ( silicon wafer 40), and the process (A2) of stacking the silicon nitride film 43 on the above silicon oxide film 42 by applying electromagnetic waves to the mixture gas between silicon compound gas not containing hydrogen and nitrogen gas or silicon compound gas not containing hydrogen.

公开(公告)号：JP2001319972A

公开(公告)日：2001-11-16

申请号：JP2000139483

申请日：2000-05-12

Applicant: SONY CORP

Inventor： FUJITA SHIGERU ,  SAITO MASAKI

IPC: H01L21/28 ,  H01L21/283 ,  H01L21/318 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/522 ,  H01L27/092 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To solve a problem of deterioration of transistor characteristics that a in a method for manufacturing a semiconductor device which carries out a self-aligning contact technique, if an offset insulation film, a side wall insulation film, an etching stopper film and the like are formed with a silicon nitride film, there occurs piercing into a substrate made of boron with hydrogen generated when a film is formed. SOLUTION: In a method for manufacturing a semiconductor device which comprises the step of forming an offset insulation film 18 to be used when a self-aligning contact is formed with a silicon nitride film 17, this manufacturing method further comprises the step that, before the offset insulation film 18 is formed, a hydrogen stopper layer 16 is formed on a surface in which the offset insulation film 18 is formed.

公开(公告)号：JPH09191009A

公开(公告)日：1997-07-22

申请号：JP141596

申请日：1996-01-09

Applicant: SONY CORP

Inventor： ENOMOTO YASUYUKI ,  SAITO MASAKI

IPC: H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To reduce difference between film thicknesses of an SiO2 film, formed by using ozone and organic silicone source as material, over a wiring pattern formed on an Si substrate, so as to prevent an impediment in photolithography to be performed later. SOLUTION: An SiO2 film 22 is formed, by using ozone and organic silicone source as material, over a wiring pattern 2 formed on an Si substrate. At this time, as an initial layer 23 in the SiO2 film 22, the SiO2 film 22 has a thickness of 100nm or greater. This film formation is performed such that the thickness of the SiO2 film 22 directly formed on the Si substrate and the thickness of the SiO2 film 22 formed on a thermooxidation film formed on the Si substrate are in the ratio of 1:0.8 to 1:0.95.

公开(公告)号：JPH0927457A

公开(公告)日：1997-01-28

申请号：JP17649195

申请日：1995-07-12

Applicant: SONY CORP

Inventor： SAITO MASAKI

IPC: C23C16/02 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/318

Abstract: PROBLEM TO BE SOLVED: To enable the effective removal of surface contaminants and facilitate the removal of a silicon oxide film formed in areas where it should not exist, by, while applying oxidizing gas to the surface of a workpiece, burning and removing surface contaminating organic substances, and thereafter, while supplying reducing gas, performing heat treatment. SOLUTION: After a wafer substrate 10 is placed in a CVD furnace, the interior of the CVD furnace is evacuated and put under reduced pressure. Oxygen, an oxidizing gas, is introduced to burn and remove organic substances 12 on the surface of the wafer substrate 10. As the result of the combustion and removal of the organic substances, a silicon oxide film 11a is formed on the surface of the wafer substrate 10 positioned at the bottom of a contact hole. Nitrogen gas is substituted for the gas in the CVD furnace. Thereafter, hydrogen gas is introduced into the CVD furnace to chemically reduce and remove the silicon oxide film 11a. This makes it possible to remove the contaminating organic substances 12 from the surface of the wafer substrate 10 under processing, and allows no silicon oxide layer 11a to be present on the surface of the wafer substrate 10 at the bottom of the contact hole.