METHOD FOR OBTAINING TRANSVERSE UNIFORMITY DURING THIN FILM DEPOSITION ON EXTENDED SUBSTRATE
    12.
    发明申请
    METHOD FOR OBTAINING TRANSVERSE UNIFORMITY DURING THIN FILM DEPOSITION ON EXTENDED SUBSTRATE 审中-公开
    在扩展基片薄膜沉积时获得横向均匀性的方法

    公开(公告)号:WO1989007664A1

    公开(公告)日:1989-08-24

    申请号:PCT/US1989000525

    申请日:1989-02-09

    CPC classification number: C23C14/562 C23C14/0042 C23C14/54

    Abstract: Apparatus (10) for sputter depositing a layer of metal onto a latterally extended substrate (12) includes a substrate support, a deposition station (14), a downstream sensing assembly (58) and a computerized controller. The deposition station includes a cathode (16, 22) and anodes (28, 30) extending the width of the substrate (12). Gas supply is provided to each of a plurality of zones through a common distribution chamber (48) with a plurality of inlets which in combination cover the width of the substrate on which a thin film layer is to be deposited. The gas flow is directed through each anode into the plasma region and is individually controlled for each zone. The downstream sensing assembly (58) includes, for each zone, a four-point contact assembly (62) using four electrically conductive wheels (64, 66, 68, 70). Two of the wheels are used to apply current to the thin film and two are used to sense the resistance of it. This information is fed into the computer for use in controlling the gas flow into the deposition station, by zone.

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