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    Electrically controllable integrated switch
    11.
    发明授权
    Electrically controllable integrated switch 有权
    电控集成开关

    公开(公告)号：US09355802B2

    公开(公告)日：2016-05-31

    申请号：US14286331

    申请日：2014-05-23

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Christian Rivero ,  Pascal Fornara ,  Antonio di-Giacomo ,  Brice Arrazat

    IPC: H01H59/00 ,  H01L27/06 ,  H01L21/822 ,  H01H1/00 ,  H01L23/522

    CPC classification number: H01H59/0009 ,  B81B2201/018 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01H1/0036 ,  H01H57/00 ,  H01H2001/0068 ,  H01H2001/0078 ,  H01H2059/0054 ,  H01L21/8221 ,  H01L23/522 ,  H01L27/0617 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An integrated circuit includes an interconnection part with several metallization levels. An electrically activatable switching device within the interconnection part has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

    Abstract translation: 集成电路包括具有多个金属化级别的互连部件。 互连部件内的可电激活的开关装置具有包括由结构保持的梁的组件。 梁和结构位于相同的金属化水平内。 布置结构在梁上的固定位置，以便为梁定义位于这些固定位置之间的枢转点。 该结构在不存在电位差的情况下相对于光束和垂直于光束的平面基本对称。 在存在施加在结构的第一部分之间的第一电位差并且在存在施加在结构的第二部分之间的第二电位差的情况下在第二方向上枢转时，梁能够在第一方向上枢转。

    Integrated switchable capacitive device
    13.
    发明授权
    Integrated switchable capacitive device 有权
    集成可开关电容器件

    公开(公告)号：US09230907B2

    公开(公告)日：2016-01-05

    申请号：US14264227

    申请日：2014-04-29

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Pascal Fornara ,  Christian Rivero

    IPC: H01L21/02 ,  H01L23/522 ,  H01L21/768 ,  H01G5/16 ,  H01L23/64

    CPC classification number: H01L27/0629 ,  H01G5/011 ,  H01G5/16 ,  H01L21/768 ,  H01L21/7682 ,  H01L21/7687 ,  H01L23/4821 ,  H01L23/5223 ,  H01L23/528 ,  H01L23/642 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00

    Abstract: An integrated circuit includes a substrate. A fixed main capacitor electrode is disposed in a metal layer overlying the substrate. A second main capacitor electrode is disposed in a metal layer and spaced from the fixed main capacitor electrode. A movable capacitor electrode is disposed adjacent the fixed main capacitor electrode. The movable capacitor electrode is switchable between a first configuration in which the movable capacitor electrode and fixed main capacitor electrode are mutually spaced out in such a manner as to form an auxiliary capacitor electrically connected to the main capacitor. In a second configuration, the movable capacitor electrode and the fixed main capacitor electrode are in electrical contact in such a manner as to give a second capacitive value.

    Abstract translation: 集成电路包括基板。 固定的主电容器电极设置在覆盖衬底的金属层中。 第二主电容器电极设置在金属层中并与固定主电容器电极间隔开。 可动电容电极设置在固定主电容器电极附近。 可移动电容器电极可以在可移动电容器电极和固定主电容器电极相互间隔开的第一配置之间切换，以形成电连接到主电容器的辅助电容器。 在第二构造中，可移动电容电极和固定主电容器电极以提供第二电容值的方式进行电接触。

    Controllable Integrated Capacitive Device
    14.
    发明申请
    Controllable Integrated Capacitive Device 有权
    可控综合电容器件

    公开(公告)号：US20150372155A1

    公开(公告)日：2015-12-24

    申请号：US14675468

    申请日：2015-03-31

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Pascal Fornara ,  Christian Rivero

    IPC: H01L29/93 ,  H01L23/04 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L27/06

    CPC classification number: H01L23/04 ,  B81B3/0021 ,  B81B2201/0221 ,  H01G5/18 ,  H01L23/5223 ,  H01L27/0629 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An integrated circuit includes several metallization levels separated by an insulating region. A hollow housing whose walls comprise metallic portions is produced within various metallization levels. A controllable capacitive device includes a suspended metallic structure situated in the hollow housing within a first metallization level including a first element fixed on two fixing zones of the housing and at least one second element extending in cantilever fashion from the first element and includes a first electrode of the capacitive device. A second electrode includes a first fixed body situated at a second metallization level adjacent to the first metallization level facing the first electrode. The first element is controllable in flexion from a control zone of this first element so as to modify the distance between the two electrodes.

    Abstract translation: 集成电路包括由绝缘区隔开的几个金属化层。 在各种金属化水平下产生其壁包括金属部分的中空壳体。 可控电容器件包括位于第一金属化水平的中空壳体内的悬挂金属结构，该第一金属化水平包括固定在壳体的两个固定区域上的第一元件和从第一元件以悬臂方式延伸的至少一个第二元件，并且包括第一电极 的电容器件。 第二电极包括位于与面向第一电极的第一金属化水平相邻的第二金属化水平的第一固定体。 第一元件可以从该第一元件的控制区域的弯曲中控制，以便改变两个电极之间的距离。

    Integrated mechanical device for electrical switching
    18.
    发明授权
    Integrated mechanical device for electrical switching 有权
    集成电气开关机械装置

    公开(公告)号：US08692247B2

    公开(公告)日：2014-04-08

    申请号：US13687932

    申请日：2012-11-28

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Pascal Fornara ,  Christian Rivero ,  Antonio di-Giacomo

    IPC: H01L23/58

    CPC classification number: H01H37/52 ,  B81B3/0024 ,  G01K3/005 ,  G01K5/486 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An integrated circuit comprising a mechanical device for electrical switching comprising a first assembly being thermally deformable and having a beam held at at least two different locations by at least two arms, the beam and the arms being metal and disposed within the same metallization level, and further comprising at least one electrically conducting body. The first assembly has a first configuration at a first temperature and a second configuration at a second temperature different from the first temperature. The beam is out of contact with the electrically conducting body in one configuration in contact with the body in the other configuration. The beam establishes or breaks an electrical link passing through the said at least one electrically conducting body and through the said beam in the different configurations.

    Abstract translation: 一种集成电路，包括用于电开关的机械装置，包括可热变形的第一组件，并且具有通过至少两个臂保持在至少两个不同位置处的梁，所述梁和所述臂是金属并且设置在相同的金属化水平内，以及 还包括至少一个导电体。 第一组件具有在第一温度下的第一构型和在与第一温度不同的第二温度下的第二构型。 在与另一种结构中的身体接触的一种结构中，光束与导电体脱离接触。 光束建立或断开通过所述至少一个导电体并通过所述光束的不同构造的电连接。

    METHOD OF COMPENSATING FOR EFFECTS OF MECHANICAL STRESSES IN A MICROCIRCUIT
    19.
    发明申请
    METHOD OF COMPENSATING FOR EFFECTS OF MECHANICAL STRESSES IN A MICROCIRCUIT 有权
    补偿机械应力在微型计算机中的影响的方法

    公开(公告)号：US20140026670A1

    公开(公告)日：2014-01-30

    申请号：US13953571

    申请日：2013-07-29

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Pascal Fornara ,  Christian Rivero

    IPC: G01L1/00 ,  H01L29/66

    CPC classification number: G01R31/2872 ,  G01L1/00 ,  G01L1/005 ,  G01L1/148 ,  G01L1/225 ,  G01L1/2293 ,  G01L11/00 ,  G01L25/00 ,  G01R31/2884 ,  H01L27/06 ,  H01L29/66007

    Abstract: A method for manufacturing an integrated circuit includes forming in a substrate a measuring circuit sensitive to mechanical stresses and configured to supply a measurement signal representative of mechanical stresses exerted on the measuring circuit. The measuring circuit is positioned such that the measurement signal is also representative of mechanical stresses exerted on a functional circuit of the integrated circuit. A method of using the integrated circuit includes determining from the measurement signal the value of a parameter of the functional circuit predicted to mitigate an impact of the variation in mechanical stresses on the operation of the functional circuit, and supplying the functional circuit with the determined value of the parameter.

    Abstract translation: 一种用于制造集成电路的方法包括在基板上形成对机械应力敏感的测量电路，并且被配置为提供表示施加在测量电路上的机械应力的测量信号。 测量电路被定位成使得测量信号也代表施加在集成电路的功能电路上的机械应力。 使用集成电路的方法包括从测量信号确定预测的功能电路的参数的值，以减轻机械应力的变化对功能电路的操作的影响，以及向功能电路提供确定的值 的参数。

    Method for Detecting Electrical Energy Produced from a Thermoelectric Material contained in an Integrated Circuit
    20.
    发明申请
    Method for Detecting Electrical Energy Produced from a Thermoelectric Material contained in an Integrated Circuit 审中-公开
    用于检测集成电路中包含的热电材料产生的电能的方法

    公开(公告)号：US20130314150A1

    公开(公告)日：2013-11-28

    申请号：US13959496

    申请日：2013-08-05

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Pascal Fornara ,  Christian Rivero

    IPC: H01L23/00

    CPC classification number: H01L23/576 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An integrated circuit includes active circuitry disposed at a surface of a semiconductor body and an interconnect region disposed above the semiconductor body. A thermoelectric material is disposed in an upper portion of the interconnect region away from the semiconductor body. The thermoelectric material is configured to deliver electrical energy when exposed to a temperature gradient. This material can be used, for example, in a method for detecting the repackaging of the integrated circuit after it has been originally packaged.

    Abstract translation: 集成电路包括设置在半导体主体的表面的有源电路和设置在半导体主体上方的互连区域。 热电材料设置在互连区域的远离半导体本体的上部。 热电材料被配置为当暴露于温度梯度时传递电能。 该材料可以用于例如在最初封装集成电路的重新包装检测方法之后。

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