Abstract:
A microelectromechanical device includes: a support body (8, 10-13); at least one movable mass (15) of semiconductor material, elastically constrained to the support body (8, 10-13) so as to be able to oscillate; fixed detection electrodes (22, 23) rigidly connected to the support body (8, 10-13) and capacitively coupled to the at least one movable mass (15); and at least one test structure (17) of semiconductor material, rigidly connected to the support body (8, 10-13) and distinct from the fixed detection electrodes (22, 23). The test structure (17) is capacitively coupled to the at least one movable mass (15) and is configured to apply electrostatic forces (FX, FY, FZ) to the at least one movable mass (15) in response to a voltage between the test structure (17) and the at least one movable mass (15).
Abstract:
A MEMS angular rate sensor is presented with two pairs of suspended masses that are micromachined on a semiconductor layer. A first pair includes two masses opposite to and in mirror image of each other. The first pair of masses has driving structures to generate a mechanical oscillation in a linear direction. A second pair of masses includes two masses opposite to and in mirror image of each other. The second pair of masses is coupled to the first pair of driving masses with coupling elements. The two pairs of masses are coupled to a central bridge. The central bridge has a differential configuration to reject any external disturbances. Each of the masses of the two pairs of masses includes different portions to detect different linear and angular movements.
Abstract:
The MEMS gyroscope (1) is formed by a substrate (5), a first mass (7) and a second mass (10), wherein the first and the second masses are suspended over the substrate and extend, at rest, in a plane of extension (XY) defining a first direction (X) and a second direction (Y) transversal to the first direction. The MEMS gyroscope further has a drive structure (48) coupled to the first mass and configured, in use, to cause a movement of the first mass in the first direction, and an elastic coupling structure (25), which extends between the first mass and the second mass and is configured to couple the movement of the first mass in the first direction (X) with a movement of the second mass in the second direction (Y). The elastic coupling structure has a first portion (27, 28, 30, 31, 36, 37) having a first stiffness and a second portion (26, 33, 34) having a second stiffness greater than the first stiffness. The first portion of the elastic coupling structure extends, at rest, in the first and the second directions, and the second portion extends, at rest, in a third direction (C), in the plane of extension, transversal to the first and the second directions.
Abstract:
A circuit (10) comprises an inertial measurement unit such as a MEMS gyroscope (12) configured to be oscillated via a driving signal ( D + , D - , Dsq ) produced by driving circuitry (14A, 14B, 16, 18, 20A, 20B, 22, 24, 26, 28, 30, 32) and a lock-in amplifier, LIA (38) receiving a sensing signal ( S + , S - , Ssq ) from the inertial measurement unit (12) as well as a reference demodulation signal which is a function of the driving signal ( D + , D - , Dsq ). The LIA amplifier (38) is configured to produce an inertial measurement signal ( Vout ) based on the sensing signal ( S + , S - , Ssq ) from the inertial measurement unit (12) and the reference demodulation signal, wherein the reference demodulation signal is affected by a variable phase error. Phase meter circuitry (40) configured to receive the driving signal ( D + , D - , Dsq ) and the sensing signal ( S + , S - , Ssq ) produces, as a function of the phase difference ( ΔΦds ) between the driving signal ( D + , D - , Dsq ) and the sensing signal ( S + , S - , Ssq ), a phase correction signal. The phase correction signal is applied (56) to the reference demodulation signal of the lock-in amplifier (38). In response to the phase correction signal being applied (56) to the reference demodulation signal of the lock-in amplifier (38) the phase error is maintained in the in the vicinity of a reference value ( Φer0 ), thus minimizing the effects of the variation of the phase error.
Abstract:
A MEMS sensor device (41) provided with a sensing structure (20), having: a substrate (2) with a top surface (2a) extending in a horizontal plane (xy); an inertial mass (30), suspended over the substrate (2); elastic coupling elements (32), elastically connected to the inertial mass (30) so as to enable inertial movement thereof with respect to the substrate (2) as a function of a quantity to be detected along a sensing axis (x) belonging to the horizontal plane (xy); and sensing electrodes (35a, 35b), capacitively coupled to the inertial mass (30) so as to form at least one sensing capacitor (C 1 , C 2 ), a value of capacitance of which is indicative of the quantity to be detected. The sensing structure (20) moreover has a suspension structure (21), to which the sensing electrodes (35a, 35b) are rigidly coupled, and to which the inertial mass (30) is elastically coupled through the elastic coupling elements (32); the suspension structure (21) is connected to an anchorage structure (23), fixed with respect to the substrate (2), by means of elastic suspension elements (28).