Abstract:
For each cell (1) to be programmed, the present threshold value (V o ) of the cell is determined; the desired threshold value (V TAR ) is acquired; the analog distance between the present threshold value and the desired threshold value is calculated; and a programming pulse (S) is then generated, the duration of which is proportional to the analog distance calculated. The programming and reading cycle is repeated until the desired threshold is reached. By this means a time saving is obtained, owing to the reduction of the number of intermediate reading steps. The method permits programming in parallel and simultaneously of a plurality of cells (1) of a memory array (2) which is connected to a single word line (5 1 ) and to different bit lines (4 1 - 4 N ), each with a programming pulse (S 1 - S N ) the duration of which is proportional to the analog distance calculated for the same cell. The programming process is thus very fast, owing to parallel application of the programming and the saving in the intermediate reading cycles.
Abstract:
An analog reading circuit (10) comprising a current mirror circuit (19) forcing two identical currents into a cell (2) to be read and into a reference cell (27) and an operational amplifier (31) having an inverting input connected to the drain terminal (13) of the cell (2) to be read, a non-inverting input connected to the drain terminal (28) of the reference cell (27) and an output connected to the gate terminal (30) of the reference cell. The reference cell (27) therefore forms part of a negative feedback loop which maintains the overdrive voltages of the cell (2) to be read and the reference cell (27) constant, irrespective of temperature variations. The reading circuit (10) is also of high precision and has a high reading speed.