Abstract:
An integrated magnetoresistive device, where a substrate (17) of semiconductor material is covered, on a first surface (19), by an insulating layer (18). A magnetoresistor (26) of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator (34) of ferromagnetic material including at least one arm (34a), extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor (26). In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.
Abstract:
A MEMS device (70) comprising a body (72), having a first surface (72A) and a second surface (72B); a diaphragm cavity (74) in the body (72) extending from the second surface (72B) of the body (72); a deformable portion (77) in the body (72) between the first surface (72A) and the diaphragm cavity; and a piezoelectric actuator (90), extending on the first surface (72A) of the body (72), over the deformable portion (77). The MEMS device (70) further comprises a recess structure (78) extending in the body (72) and delimiting, in the body (72), a flexible stopper portion (72C) for the deformable portion (77), the flexible stopper portion (72C) being arranged between the deformable portion (77) and the recess structure (78).