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公开(公告)号：WO2007010574A1
公开(公告)日：2007-01-25
申请号：PCT/IT2005/000435
申请日：2005-07-22
Applicant: STMICROELECTRONICS S.R.L. , RICOTTI, Giulio , MORELLI, Marco , DELLA TORRE, Luigi , VITALI, Andrea, Lorenzo
Inventor： RICOTTI, Giulio , MORELLI, Marco , DELLA TORRE, Luigi , VITALI, Andrea, Lorenzo
CPC classification number: G01L1/18 , B60T2270/82
Abstract: In an integrated pressure sensor (15) with a high full-scale value, a monolithic body (16) of semiconductor material has a first and a second main surface (16a and 16b), opposite and separated by a substantially uniform distance (w). The monolithic body (16) has a bulk region (17), having a sensitive portion (23) next to the first main surface (16a), upon which pressure (P) acts. A first piezoresistive detection element (18) is integrated in the sensitive portion (23) and has a variable resistance as a function of the pressure (P). The bulk region (17) is a solid and compact region and has a thickness substantially equal to the distance (w).
Abstract translation: 在具有高满量程值的集成压力传感器（15）中，半导体材料的整体（16）具有第一和第二主表面（16a和16b），所述第一和第二主表面相对并分开大致均匀的距离（w） 。 整体式主体（16）具有主体区域（17），其具有靠近第一主表面（16a）的敏感部分（23），压力（P）作用在该区域上。 第一压阻检测元件（18）集成在敏感部分（23）中并且具有作为压力（P）的函数的可变电阻。 本体区域（17）是实心且紧凑的区域，其厚度基本上等于距离（w）。
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2.发明申请INTEGRATED MAGNETORESISTIVE SENSOR, IN PARTICULAR THREE-AXES MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF 审中-公开集成磁传感器，特别是三轴磁阻传感器及其制造方法
公开(公告)号：WO2012085296A1
公开(公告)日：2012-06-28
申请号：PCT/EP2011/074045
申请日：2011-12-23
Applicant: STMICROELECTRONICS S.R.L. , PACI, Dario , MORELLI, Marco , RIVA, Caterina
Inventor： PACI, Dario , MORELLI, Marco , RIVA, Caterina
CPC classification number: G01R33/0011 , B82Y25/00 , G01R33/093 , H01L43/12
Abstract: An integrated magnetoresistive device, where a substrate (17) of semiconductor material is covered, on a first surface (19), by an insulating layer (18). A magnetoresistor (26) of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator (34) of ferromagnetic material including at least one arm (34a), extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor (26). In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.
Abstract translation: 通过绝缘层（18）在第一表面（19）上覆盖半导体材料的衬底（17）的集成磁阻器件。 铁磁材料的磁阻（26）在绝缘层中延伸并限定传感器的灵敏度平面。 铁磁材料的集中器（34）包括至少一个臂（34a），沿着横向方向延伸到灵敏度平面并垂直偏移到磁电阻（26）。 以这种方式，垂直于灵敏度平面指向的磁通线被集中和偏转，以便产生指向与灵敏平面平行的方向的磁场分量。
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3.发明申请INTEGRATED PRESSURE SENSOR WITH DOUBLE MEASURING SCALE AND A HIGH FULL-SCALE VALUE 审中-公开具有双重测量尺寸和高全尺寸值的集成压力传感器
公开(公告)号：WO2007010570A1
公开(公告)日：2007-01-25
申请号：PCT/IT2005/000431
申请日：2005-07-22
Applicant: STMICROELECTRONICS S.R.L. , RICOTTI, Giulio , MORELLI, Marco , DELLA TORRE, Luigi , VITALI, Andrea, Lorenzo , MASTROMATTEO, Ubaldo
Inventor： RICOTTI, Giulio , MORELLI, Marco , DELLA TORRE, Luigi , VITALI, Andrea, Lorenzo , MASTROMATTEO, Ubaldo
CPC classification number: G01L9/0054 , G01L9/0045 , G01L15/00
Abstract: In a pressure sensor (15) with double measuring scale: a monolithic body (16) of semiconductor material has a first main surface (16a), a bulk region (17) and a sensitive portion (33) upon which pressure (P) acts; a cavity (18) is formed in the monolithic body (16) and is separated from the first main surface (16a) by a membrane (19), which is flexible and deformable as a function of the pressure (P), and is arranged inside the sensitive portion (33) and is surrounded by the bulk region (17); a low-pressure detecting element (28) of the piezoresistive type, sensitive to first values of pressure (P), is integrated in the membrane (19) and has a variable resistance as a function of the deformation of the membrane (19); in addition, a high-pressure detecting element (29), also of a piezoresistive type, is formed in the bulk region (17) inside the sensitive portion (33) and has a variable resistance as a function of the pressure (P). The highpressure detecting element (29) is sensitive to second values of pressure (P).
Abstract translation: 在具有双重测量标尺的压力传感器（15）中：半导体材料的整体（16）具有第一主表面（16a），主体区域（17）和压力（P）作用于其上的敏感部分 ; 在整体式主体（16）中形成空腔（18），并且通过膜（19）与第一主表面（16a）分离，该膜（19）作为压力（P）的函数是柔性和可变形的，并且布置 在所述敏感部分（33）的内部并且被所述主体区域（17）包围; 对第一压力值（P）敏感的压阻型低压检测元件（28）集成在膜（19）中，并具有作为膜（19）的变形的函数的可变电阻; 此外，在敏感部分（33）内的主体区域（17）中形成压阻型高压检测元件（29），并具有作为压力（P）的函数的可变电阻。 高压检测元件（29）对第二压力值（P）敏感。
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公开(公告)号：EP3118905B1
公开(公告)日：2019-10-30
申请号：EP16175646.5
申请日：2016-06-22
Applicant: STMicroelectronics S.r.l.
Inventor： MORELLI, Marco , TOIA, Fabrizio Fausto Renzo , BARILLARO, Giuseppe , SAMBI, Marco
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5.发明公开INTEGRATED PRESSURE SENSOR WITH DOUBLE MEASURING SCALE AND A HIGH FULL-SCALE VALUE 有权带双量表和高价值FULL决定性集成压力传感器
公开(公告)号：EP1907811A1
公开(公告)日：2008-04-09
申请号：EP05778689.9
申请日：2005-07-22
Applicant: STMicroelectronics S.r.l.
Inventor： RICOTTI, Giulio , MORELLI, Marco , DELLA TORRE, Luigi , VITALI, Andrea, Lorenzo , MASTROMATTEO, Ubaldo
CPC classification number: G01L9/0054 , G01L9/0045 , G01L15/00
Abstract: In a pressure sensor (15) with double measuring scale: a monolithic body (16) of semiconductor material has a first main surface (16a), a bulk region (17) and a sensitive portion (33) upon which pressure (P) acts; a cavity (18) is formed in the monolithic body (16) and is separated from the first main surface (16a) by a membrane (19), which is flexible and deformable as a function of the pressure (P), and is arranged inside the sensitive portion (33) and is surrounded by the bulk region (17); a low-pressure detecting element (28) of the piezoresistive type, sensitive to first values of pressure (P), is integrated in the membrane (19) and has a variable resistance as a function of the deformation of the membrane (19); in addition, a high-pressure detecting element (29), also of a piezoresistive type, is formed in the bulk region (17) inside the sensitive portion (33) and has a variable resistance as a function of the pressure (P). The highpressure detecting element (29) is sensitive to second values of pressure (P).
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Patent Agency Ranking6.发明公开POROUS-SILICON LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开LEGTEMITTIERENDE VORRICHTUNG AUSPORÖSEMSILIKON UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP3118905A1
公开(公告)日：2017-01-18
申请号：EP16175646.5
申请日：2016-06-22
Applicant: STMicroelectronics S.r.l.
Inventor： MORELLI, Marco , TOIA, Fabrizio Fausto Renzo , BARILLARO, Giuseppe , SAMBI, Marco
Abstract: A light-emitting device (1), comprising: a semiconductor body (2), having a first conductivity type, with a front side (2a) and a back side (2b); a porous-silicon region (10), which extends in the semiconductor body (2) at the front side (2a); and a cathode region (8) in direct lateral contact with the porous-silicon region (10). The light-emitting device further comprises a barrier region (12) of electrically insulating material, which extends in direct contact with the cathode region (8) at the bottom side of the cathode region so that in use an electric current flows in the semiconductor body exclusively through lateral portions of the cathode region (8).
Abstract translation: 一种发光器件（1），包括：具有第一导电类型的具有前侧（2a）和后侧（2b）的半导体本体（2）; 在前侧（2a）上在半导体本体（2）中延伸的多孔硅区域（10）; 以及与多孔硅区域（10）直接侧向接触的阴极区域（8）。 发光装置还包括电绝缘材料的阻挡区域（12），其在阴极区域的底侧处与阴极区域（8）直接接触地延伸，使得在使用中电流在半导体本体 仅通过阴极区域（8）的横向部分。
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7.发明公开
公开(公告)号：EP3859789A1
公开(公告)日：2021-08-04
申请号：EP21154045.5
申请日：2021-01-28
Applicant: STMicroelectronics S.r.l.
Inventor： PATTI, Davide Giuseppe , SCURATI, Mario Giovanni , MORELLI, Marco
IPC: H01L29/78 , H01L21/336 , H01L29/417
Abstract: The vertical conduction electronic power device (51) is formed by a body (70) delimited by a first and a second surface (70A, 70B) and having an epitaxial layer (54), of semiconductor material, and a substrate (90). The epitaxial layer is delimited by the first surface (70A) of the body and the substrate is delimited by the second surface (70B) of the body; the epitaxial layer houses at least a first and a second conduction region (56, 60) having a first type of doping (N) and a plurality of insulated-gate regions (59), which extend within the epitaxial layer (54). The substrate (90) has at least one silicide region (91), which extends starting from the second surface (70B) of the body (70) towards the epitaxial layer.
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8.发明公开
公开(公告)号：EP3511975A1
公开(公告)日：2019-07-17
申请号：EP19151970.1
申请日：2019-01-15
Applicant: STMicroelectronics S.r.l.
Inventor： VILLA, Flavio Francesco , MORELLI, Marco , MARCHESI, Marco , MARIANI, Simone Dario , TOIA, Fabrizio Fausto Renzo
Abstract: A semiconductor die (100; 200) comprising: a semiconductor body (2, 6), having a front side (6a) and a back side (2b), housing an electronic circuit (8); a buried region (18) in the semiconductor body between the electronic circuit and the back side, including a first layer of conductive material (20; 48) and a dielectric layer (21; 46) arranged between the first layer of conductive material and the semiconductor body; and at least one first conductive path (24, 25; 50, 52, 55) between the buried region and the front side, which forms a path for electrical access to the first layer of conductive material, wherein the first layer of conductive material forms a first plate of a capacitor (1; 40) buried in the semiconductor body, the dielectric layer forms a dielectric of the capacitor, and the semiconductor body forms a second plate of the capacitor. Main figure: Figure 1
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9.发明授权INTEGRATED MAGNETORESISTIVE SENSOR, IN PARTICULAR THREE-AXES MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF 有权INTEGRATED磁阻传感器，尤其是用于制造三轴磁致电阻传感器和过程
公开(公告)号：EP2656090B1
公开(公告)日：2014-12-03
申请号：EP11805049.1
申请日：2011-12-23
Applicant: STMicroelectronics S.r.l.
Inventor： PACI, Dario , MORELLI, Marco , RIVA, Caterina
CPC classification number: G01R33/0011 , B82Y25/00 , G01R33/093 , H01L43/12
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10.发明公开INTEGRATED ACOUSTIC TRANSDUCER WITH REDUCED PROPAGATION OF UNDESIRED ACOUSTIC WAVES 审中-公开集成声波传感器，减少传播不需要的声波
公开(公告)号：EP3238629A1
公开(公告)日：2017-11-01
申请号：EP16206869.6
申请日：2016-12-23
Applicant: STMicroelectronics S.r.l.
Inventor： MORELLI, Marco , QUAGLIA, Fabio , TOIA, Fabrizio Fausto Renzo , SAMBI, Marco , BARILLARO, Giuseppe
CPC classification number: B06B1/0292 , A61B8/4483 , B06B1/0644 , B06B1/067 , B06B1/0685 , G10K9/22 , G10K11/02 , H04R19/005
Abstract: The acoustic device has a micromachined acoustic transducer element (15); an acoustically attenuating region (40); and an acoustic matching region (32) arranged between the acoustic transducer element (15) and the acoustically attenuating region (40). The acoustic transducer element (15) is formed in a first substrate (25) housing a cavity (19) delimiting a membrane (16). A second substrate (30) of semiconductor material integrating an electronic circuit is arranged between the acoustic transducer element (15) and the acoustically attenuating region (40). The acoustic matching region (32) has a first interface (32A) with the second substrate (30) and a second interface (32B) with the acoustically attenuating region (40). The acoustic matching region (32) has an impedance matched to the impedance of the second substrate (30) in proximity of the first interface (32A), and an impedance matched to the acoustically attenuating region (40) in proximity of the second interface (32B).
Abstract translation: 声学装置具有微机械声学换能器元件（15）; 一个声学衰减区域（40）; 和布置在声学换能器元件（15）和声学衰减区域（40）之间的声学匹配区域（32）。 声换能器元件（15）形成在容纳界定膜（16）的空腔（19）的第一基板（25）中。 集成电子电路的半导体材料的第二衬底（30）布置在声学换能器元件（15）与声学衰减区域（40）之间。 声匹配区（32）具有与第二基板（30）的第一界面（32A）以及与声学衰减区（40）的第二界面（32B）。 声匹配区域（32）具有与第一接口（32A）附近的第二基板（30）的阻抗匹配的阻抗以及与第二接口（32A）附近的声学衰减区域（40）匹配的阻抗 32B）。
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