公开(公告)号：JP2001026890A

公开(公告)日：2001-01-30

申请号：JP19647299

申请日：1999-07-09

Applicant: ASAHI KAGAKU KOGYO CO LTD ,  SUMITOMO CHEMICAL CO

Inventor： OTA KOJI ,  TAKASHIMA MASAYUKI

IPC: B08B3/08 ,  C11D7/04 ,  C11D7/32 ,  C11D7/34 ,  C11D7/54 ,  C11D17/08 ,  C23F11/00 ,  C23G1/06 ,  C23G1/18 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To obtain a corrosion preventive agent for a washing liquid which does not have corrosion resistance to tungsten and is optimum for metal washing by including >=1 kind of the compounds selected from triazoles, polyethylene imine and polyamine sulfone into this agent. SOLUTION: This corrosion preventive agent for metals includes the compounds selected from the triazoles containing one amino group or thiol group, the polyethylene imine and the polyamine sulfone expressed by the formula (in the formula, R1, R2 are H, CH3, C2H5 or CH2C6H5, X- is an anionic group and n is 30 to 200). More preferably, the triazoles are 3-aminotriazole; the polyethylene imine is of 300 to 10,000 in molecular weight. The polyamine sulfone is of hydrogen in R1 and R2. The washing liquid composition not having the corrosion resistance to the metals and more particularly the tungsten may be provided by mixing this preventive agent with the washing liquid.

公开(公告)号：JP2001007072A

公开(公告)日：2001-01-12

申请号：JP2000114744

申请日：2000-04-17

Applicant: NEC CORP ,  SUMITOMO CHEMICAL CO

Inventor： AOKI HIDEMITSU ,  TAKASHIMA MASAYUKI

IPC: C11D7/18 ,  C11D7/32 ,  C11D17/08 ,  H01L21/304 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To effectively remove contaminants from a substrate, where an insulating film of a plurality of silicon dioxide with different impurity content is exposed, while no roughness is generated between both insulating films by having it contain alkaline amine organic compound and hydrogen peroxide. SOLUTION: Alkaline amine organic compound and hydrogen peroxide are included. Tetraaliylammonium hydroxide or trialkyl (hydroalkyl) ammonium/ hydroxide, etc., are used as alkaline amine organic compound. The content of alkaline amine organic compound is preferably set at about 0.0001-5.0 wt.%. The content of hydrogen peroxide is preferably set at about 0.01-20 wt.%. Thus, contaminants are effectively removed from a substrate, where an insulating film of a plurality of silicon dioxide with different impurity content is exposed, without roughness being generated between both insulating films.

公开(公告)号：JP2000044229A

公开(公告)日：2000-02-15

申请号：JP21551198

申请日：1998-07-30

Applicant: SUMITOMO CHEMICAL CO

Inventor： SARARA KENICHI ,  TAKASHIMA MASAYUKI

IPC: C01C1/02

Abstract: PROBLEM TO BE SOLVED: To effectively prevent the coloring of ammonia water to be used for washing a silicon wafer by putting the ammonia water contg. an org. complexing agent having a structure in which OH groups bond to an arom. group in the presence of an inert gas. SOLUTION: Ammonia water contg. an org. complexing agent having a structure in which two or more OH groups bond to an arom. group is put in the presence of an inert gas. The org. complexing agent may be catechol, hydroquinone, resorcinol, pyrogallol or tiron but catechol excellent in chelating effect is effectively contained. The inert gas may be nitrogen, argon or helium but nitrogen is generally used. Since dissolved oxygen in the ammonia water causes coloring, purified nitrogen obtd. by removing oxygen to the utmost is preferably used.

公开(公告)号：JPH11176774A

公开(公告)日：1999-07-02

申请号：JP34127597

申请日：1997-12-11

Applicant: SUMITOMO CHEMICAL CO

Inventor： TAKASHIMA MASAYUKI ,  SUKUMODA ATSUSHI ,  SARARA KENICHI

IPC: B24B37/00 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To attain stable grinding characteristic and prevent occurrence of scars on a face to be ground, by a method wherein the constitution is an aqueous emulsion containing vinyl compound polymer resin particles obtained by emulsion polymerization and ammonia. SOLUTION: Ammonium persulfate enters super-pure water as a polymerizing agent, and after temperature is increased, gas in a reactor is replaced by nitrogen gas. Thereafter, methylmethacrylate is supplied at a constant speed to the reactor as a monomer, to obtain a resin emulsion in which polymer particles of methylmethacrylate are scattered. These resin particles are in a ball-like form in which an average particle size is about 0.3 μm, and a cohered substance of resin particles is not observed. Ammonia water is added to this emulsion to attain a slurry. This slurry is used as abrasives and a metal film covered on a silicon wafer is ground in a chemical and mechanical grinding manner.

公开(公告)号：JPH08279472A

公开(公告)日：1996-10-22

申请号：JP8291395

申请日：1995-04-07

Applicant: SUMITOMO CHEMICAL CO

Inventor： TAKASHIMA MASAYUKI ,  SARARA KENICHI

IPC: H01L21/22 ,  H01L21/205 ,  H01L21/31

Abstract: PURPOSE: To prevent a contamination of a water by contaminant in flowing air, providing a given number of dummy wafers between a wafer and an opening for carrying out a boat. CONSTITUTION: A sample wafer to form a thermal oxide film thereon is mounted on a water board 7, and two or more dummy wafers 9 cleaned by hydrofluoric acid are mounted on the lower side of the sample wafer 8. The number of wafers on the boat 7 is 25 to 50 for example. In this case, a small quantity of air flows into the inside of the furnace, because there is a small gap for discharge between an opening of the furnace and a stage 6 for mounting the wafers 8. Without the dummy wafer, the face of wafers 8 is contaminated by an impurity in the air. When there are the dummy wafers between the sample wafer 8 and the opening of storing wafers, the face of the wafer is protected from oxidization or contamination in the air so that a good film is obtained in a following formation step of thermal oxide film.

公开(公告)号：JP2001107081A

公开(公告)日：2001-04-17

申请号：JP28551599

申请日：1999-10-06

Applicant: MITSUBISHI ELECTRIC CORP ,  SUMITOMO CHEMICAL CO

Inventor： SUGANO ITARU ,  YOKOI NAOKI ,  MORITA HIROYUKI ,  ICHIKI NAOKI ,  NEZU HIDEAKI ,  TAKASHIMA MASAYUKI

IPC: H01L21/302 ,  C09K13/02 ,  C11D1/44 ,  C11D1/722 ,  C11D3/02 ,  C11D3/04 ,  C11D11/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide a cleaning agent improved so that it may not cause disconnection of wirings or buried conductive layers. SOLUTION: This agent contains a hydroxide, water, and at least either of the compounds represented by formulae I and II: HO-((EO)x-(PO)y)z-H (I) and R-[((EO)x-(PO)y)z-H]m (II). In the formulae, EO is an oxyalkylene group; PO is an oxypropylene group; and x and y are integers satisfying x/(x+y)=0.05-0.4; and z is a positive integer; R is a residue derived by removing at least one hydroxyl group or aminic hydrogen atom from an alcohol or an amine; and m is an integer of 1 or greater. Desirably, the hydroxide is selected from tetramethylammonium hydroxide, potassium hydroxide, and sodium hydroxide.

公开(公告)号：JP2000239651A

公开(公告)日：2000-09-05

申请号：JP4482599

申请日：1999-02-23

Applicant: SUMITOMO CHEMICAL CO

Inventor： SUKUMODA ATSUSHI ,  TAKASHIMA MASAYUKI

IPC: B24B37/00 ,  C09K3/14 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide an abrasive which can polish a metal film for a circuiting material or a barrier metal at a rate necessary for the production of a semicon ductor device without causing a minute defect called scratch or a hollow called dishing on the surface of the metal film after polishing in a step for polishing a metal film for a circuiting material constituting a semiconductor device and does not cause troubles such as sedimentation of flocculation of abrasive particles during polishing treatment or storage, and to provide a polishing method using said abrasive. SOLUTION: This abrasive for the production of a semiconductor device comprises a resin particle comprising a polymer obtained by the emulsion polymerization of ethylenic unsaturated monomers using neither an emulsifier nor a dispersant, and an inorganic compound, and is used for the purpose of polishing a metal film. The method for polishing comprises a step using the abovementioned abrasive in a step for polishing a metal film in the production of a semiconductor device.

公开(公告)号：JPH07321080A

公开(公告)日：1995-12-08

申请号：JP11298094

申请日：1994-05-26

Applicant: SUMITOMO CHEMICAL CO

Inventor： TAKASHIMA MASAYUKI ,  SARARA KENICHI

IPC: H01L21/304

Abstract: PURPOSE:To provide a cleaning method to obtain a silicon wafer with high cleanness in which the adhesion of a metal is suppressed, even after the silicon wafer is cleaned by a cleaning liquid containing a sulfuric acid or hydrochloric acid. CONSTITUTION:After a silicon wafer is cleaned by a cleaning liquid containing a sulfuric acid or hydrochloric acid, for example, a mixture liquid (SPM) of sulfuric acid and hydrogen peroxide or a mixture liquid (HPM) consisting of hydrochloric acid, hydrogen peroxide and an ultra-pure water, it is treated with a water-soluble liquid containing hydrofluoric acid and nitric acid.

公开(公告)号：JPH03221577A

公开(公告)日：1991-09-30

申请号：JP1632790

申请日：1990-01-26

Applicant: SUMITOMO CHEMICAL CO

Inventor： INOUE HARUO ,  NAKADA TAKASHI ,  TAKASHIMA MASAYUKI

IPC: C08L83/04 ,  C08G77/04 ,  C09D183/04 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

Abstract: PURPOSE:To obtain the subject coating solution flattening level difference of lower layer wiring having a fine pattern in forming a multi-layered wiring comprising siloxane prepolymer having a specific average molecular weight derived from tetrafunctional, trifunctional and bifunctional alkoxysilane. CONSTITUTION:The aimed coating solution is composed of (A) siloxane-based prepolymer having 1000-4000 weight average molecular weight obtained by hydrolyzing condensation of (i) 0.14-0.50mol% tetraalkoxysilane expressed by the formula Si(OR )4, (ii) 0.03-0.66mol% alkyl trialkoxysilane or aryl trialkoxysilane expressed by the formula R Si(OR )3 and (iii) 0.11-0.66mol% dialkyl dialkoxysilane or diaryl dialkoxysilane expressed by the formula R R Si(OR )2 (R to R are 1-6C alkyl or 6-10C aryl) and (B) an organic solvent.

公开(公告)号：JPH03183756A

公开(公告)日：1991-08-09

申请号：JP32479989

申请日：1989-12-13

Applicant: SUMITOMO CHEMICAL CO

Inventor： INOUE HARUO ,  NAKADA TAKASHI ,  TAKASHIMA MASAYUKI

IPC: C23C14/00 ,  C23C14/06 ,  H01L21/3205

Abstract: PURPOSE:To form multilayered wirings having a good contact characteristic by providing through-holes in insulating films for insulating the multilayered wirings on a substrate, filling the holes with org. films and subjecting the wirings to an O2 plasma treatment, then removing the org. films together with a resist. CONSTITUTION:The 1st layer wiring 2 of Al, etc., is formed by a sputtering method, etc., on the substrate 1. An SiO2 film 6 is then formed by CVD and an org. SOG film 7 is formed to flatten steps; thereafter, an SiO2 film 8 is further formed to form 3 layers of the interlayer insulating films 3. A photoresist film 9 is then provided and is windowed 10 by exposing and developing. The interlayer insulating films 3 are etched through the windows 10 to form the through-holes 4. After the through-holes 4 are filled with the org. films 11, the films are subjected to the O2 plasma treatment. The photoresist 9 is thereafter removed and the above-mentioned org. films 11 are removed by a resist stripping liquid. The through-holes 4 having no hygroscopicity are obtd. in this way and the 2nd layer wiring, 5 connecting to the 1st layer wiring 2 is formed via the through-holes 4.