METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明公开
    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES LICHTEMITTIERENDEN HALBLEITERBAUELENTS

    公开(公告)号:EP3101698A4

    公开(公告)日:2017-06-28

    申请号:EP15743494

    申请日:2015-01-20

    Abstract: A method for producing a semiconductor light-emitting device comprising a substrate, an element and an encapsulating material as constituent members, comprising a first step of providing the substrate with the element; a second step of potting un uncured encapsulating material onto the substrate to cover the element; and a third step of curing the potted encapsulating material in such a manner that all of the following formulae (1), (2) and (3) are satisfied when the absorbances which a cured encapsulating material having a thickness of t [nm] has at wavelengths of 380 nm, 316 nm and 260 nm are represented by Abs A (t), Abs B (t) and Abs C (t), respectively and the light transmittance thereof at 380 nm is represented by T(t): T 1.7 ‰¥ 90 % Abs B t ˆ’ Abs A t

    Abstract translation: 一种半导体发光元件的制造方法,其特征在于,具备:第一工序,在所述基板上形成所述元件; 将未固化的封装材料封装在基板上以覆盖元件的第二步骤; 以及第三步骤,以使得固化的具有厚度t [nm]的密封材料的吸光度满足以下所有式(1),(2)和(3)的方式固化所述封装材料 在380nm,316nm和260nm的波长分别由Abs A(t),Abs B(t)和Abs C(t)表示,并且其在380nm处的光透射率由T(t)表示:T 1.7‰¥90%Abs B t'Abs A t <0.011 t Abs C t'Abs A t <0.125 t。

    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    5.
    发明公开
    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES LICHTEMITTIERENDEN HALBLEITERBAUELENTS

    公开(公告)号:EP3109909A4

    公开(公告)日:2017-07-12

    申请号:EP15751586

    申请日:2015-02-06

    Abstract: A method for producing a semiconductor light-emitting device comprising a substrate, an element and an encapsulating material as constituent members, comprising a first step of providing the substrate with the element; a second step of at least one encapsulating material (i) before curing selected from the group consisting of addition polymerization-type encapsulating materials and polycondensation-type encapsulating materials onto the substrate to cover the element; a third step of curing the potted encapsulating material (i) before curing; and a fourth step of potting a polycondensation-type encapsulating material (ii) before curing onto the encapsulating material (i) after curing which covers the element, and then curing the potted polycondensation-type encapsulating material (ii) before curing, thereby laminating the encapsulating material, and a semiconductor light-emitting device produced by the producing method, wherein two or more layers each comprising the encapsulating material are laminated.

    Abstract translation: 一种半导体发光元件的制造方法,其特征在于,具备:第一工序,在所述基板上形成所述元件; 第二步骤,将至少一种包封材料(i)在选自加聚类型的封装材料和缩聚类型的封装材料的固化之前固定到衬底上以覆盖元件; 固化封装材料的第三步骤(i)在固化之前; 以及第四工序,在固化前,将固化前的缩聚型密封材料(ii)浇注到覆盖所述元件的固化后的所述密封材料(i)上,然后使所述密封材料(ii)固化之前固化,由此层压 以及通过该制造方法制造的半导体发光器件,其中层压两个或更多个各自包含封装材料的层。

    METHOD FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING DEVICE

    公开(公告)号:EP3176840A4

    公开(公告)日:2018-01-24

    申请号:EP15826730

    申请日:2015-07-27

    CPC classification number: H01L33/56 C08G77/04 C09D183/06

    Abstract: A method for producing a semiconductor light-emitting device comprising: a step of applying a silicone resin composition to a surface of a semiconductor light-emitting element, and a step of forming an encapsulating portion covering the surface of the semiconductor light-emitting element by heat curing the applied silicone resin composition; wherein the silicone resin composition comprises a silicone resin in which the constituent silicon atoms are substantially only silicon atoms to which three oxygen atoms are bonded in an amount of 60% by mass or more relative to a total mass ofsolid components in the silicone resin composition, and the heat curing is performed under conditions in which an infrared absorption spectrum peak position assigned to Si-O-Si linkages in a range from 1,000 to 1,050 cm -1 of the silicone resin before the heat curing is designated a cm -1 , and an infrared absorption spectrum peak position assigned to Si-O-Si linkages in a range from 950 to 1,050 cm -1 of the silicone resin composition after the heat curing is designated b cm -1 , satisfying 5

    シリコーン樹脂組成物、硬化物および半導体発光素子用封止材

    公开(公告)号:JP2017115145A

    公开(公告)日:2017-06-29

    申请号:JP2016247088

    申请日:2016-12-20

    CPC classification number: C08G77/14 C08K13/08 C08L83/04 H01L23/29 H01L23/31

    Abstract: 【課題】硬化物のUV安定性が高いシリコーン樹脂組成物、硬化物、半導体発光素子用封止材の提供。【解決手段】下記(i)〜(iii)の要件を満たすシリコーン樹脂組成物。(i)含有するケイ素原子が、A1ケイ素原子及びA2ケイ素原子からなる群から選ばれる少なくとも1種のケイ素原子と、A3ケイ素原子とから実質的になり、A1ケイ素原子、A2ケイ素原子及びA3ケイ素原子の合計含有量に対する、A3ケイ素原子の含有量の割合が50モル%以上99モル%以下。(ii)ケイ素原子に結合する側鎖が、炭素数1〜3のアルキル基、炭素数1若しくは2のアルコキシ基、又は水酸基であり、アルコキシ基のモル比が、アルキル基100に対して5未満であり、水酸基のモル比が、アルキル基100に対して10以上。(iii)金属触媒を実質的に含有せず、且つ金属を含まない硬化用触媒を含有し、シリコーン樹脂組成物における硬化用触媒の濃度が、600ppm以下。【選択図】なし

    Metallic abrasive composition
    9.
    发明专利
    Metallic abrasive composition 审中-公开
    金属磨料组合物

    公开(公告)号:JP2005014206A

    公开(公告)日:2005-01-20

    申请号:JP2004158830

    申请日:2004-05-28

    Abstract: PROBLEM TO BE SOLVED: To provide a metallic abrasive composition capable of polishing metal such as Ta at a high speed, having high cleaning performance to a hydrophobic low dielectric constant film, and superior in preservation stability without precipitating abrasive grains in storing. SOLUTION: This metallic abrasive composition is characterized by including a anionic surface active agent having two or more anionic functional groups, the abrasive grains, and inorganic salt in a molecular structure. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:提供能够高速抛光金属如Ta的金属研磨组合物,对疏水性低介电常数膜具有高清洁性能,并且在保存稳定性方面优异,而不会使存储中的磨粒沉淀。 解决方案:该金属磨料组合物的特征在于包括具有两个或多个阴离子官能团的阴离子表面活性剂,磨粒和分子结构中的无机盐。 版权所有(C)2005,JPO&NCIPI

    DETERGENT LIQUID FOR ELECTRONIC PART

    公开(公告)号:JP2001214199A

    公开(公告)日:2001-08-07

    申请号:JP2000028128

    申请日:2000-02-04

    Abstract: PROBLEM TO BE SOLVED: To provide a detergent liquid for an electronic part which effectively can clean a fine contamination and an organic material from a surface of an electronic part while preventing silicon of the electronic part from being eroded and does not become cloudy even when a concentration of an alkali compound is high or a concentration of a compound added to prevent the erosion of the silicon is high, particularly to provide a detergent liquid which is suitable for cleansing an electronic part having a silicon-exposed surface. SOLUTION: This detergent liquid for an electronic part contains a hydroxide, water a water-soluble organic compound and a compound represented by formula (I) and/or formula (II): HO-((EO)x-(PO)y)z-H (I) (wherein, EO is an oxyethylene group; PO is an oxypropylene group; (x) and (y) are each an integer satisfying that x/(x+y) is 0.05 to 0.4; and (z) is an positive integer) and R-[((EO)x-(PO)y)z- H]m (II) (wherein, EO, PO, (x), (y) and (z) are the same as defined in equation (I); R is a residual group obtained by removing hydrogen from a hydroxyl group of an alcohol or an amine or a residual group obtained by removing hydrogen from an amino group; and (m) is an integer of 1 or more).

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