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公开(公告)号:CA2022359C
公开(公告)日:1998-10-06
申请号:CA2022359
申请日:1990-07-31
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: MATSUURA TAKASHI , ITOZAKI HIDEO , NAKANISHI HIDENORI
IPC: C04B41/87 , C01B13/14 , C01G1/00 , C01G3/00 , C23C14/00 , C23C14/08 , C23C14/58 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24 , C23C14/28 , C23C14/32
Abstract: In a process for forming a superconducting thin film of compound oxide on a substrate by vacuum deposition under the presence of high-frequency plasma while oxygen gas is supplied through a nozzle onto a surface of the substrate, after the deposition complete, the thin film deposited is further after-treated in the same vacuum chamber at a substrate temperature between 300.degree.C and 600.degree.C under the presence o f high-frequency plasma with maintaining the oxygen gas supply.
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公开(公告)号:DE69316258T2
公开(公告)日:1998-07-23
申请号:DE69316258
申请日:1993-04-22
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: MATSUURA TAKASHI , HIGAKI KENJIRO , ITOZAKI HIDEO
Abstract: A microwave component includes a superconducting signal conductor (10) formed on a first dielectric substrate (20) and a superconducting ground conductor (30) formed on a second dielectric substrate (40). The first dielectric substrate (20) is staked on the superconducting ground conductor (10) of the second dielectric substrate (40). Each of the superconducting signal conductor (10) and the superconducting ground conductor (30) is formed of an oxide superconductor thin film of which crystals are orientated in such a manner that the c-planes of the crystals are parallel to the direction in which an electro-magnetic field generated by microwave launched to the microwave component changes.
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公开(公告)号:DE69318473D1
公开(公告)日:1998-06-18
申请号:DE69318473
申请日:1993-05-28
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: TANAKA SABURO , MATSUURA TAKASHI , ITOZAKI HIDEO
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公开(公告)号:CA2073831C
公开(公告)日:1997-11-18
申请号:CA2073831
申请日:1992-07-14
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: ITOZAKI HIDEO , TANAKA SABURO , MATSUURA TAKASHI
Abstract: A Josephson junction device includes a substrate, an oxide thin film formed on a portion of the principal surface of the substrate, which is constituted of a single crystal of which lattices shift at angle of 45.degree. to that of the principal surface of the substrate. One of the two portions of the oxide superconductor thin film is formed on the oxide thin film and the other portion of the superconductor thin film is formed on the principal surface of the substrate directly so that the lattices of the two portions of the oxide superconductor thin film are respectively linear up to those of the oxide thin film and the principal surface of the substrate and the grain boundary. The grain boundary which constitutes a weak link of the Josephson junction is formed just on the step portion formed of the oxide thin film.
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公开(公告)号:DE69125129D1
公开(公告)日:1997-04-17
申请号:DE69125129
申请日:1991-12-26
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: MATSUURA TAKASHI , TANAKA SABURO , ITOZAKI HIDEO
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公开(公告)号:DE69300940T2
公开(公告)日:1996-06-27
申请号:DE69300940
申请日:1993-05-28
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: TANAKA SABURO , MATSUURA TAKASHI , ITOZAKI HIDEO
Abstract: A Josephson junction device comprising a single crystalline substrate (5) including a principal surface, a layer (15) of the same material as the substrate formed on the principal surface of the substrate so as to form a step on the principal surface, and an oxide superconductor thin film (10) formed on the principal surface of the substrate (5). The oxide superconductor thin film includes a first and a second superconducting portion (1,2) respectively positioned above and below the step, which are constituted of single crystals of the oxide superconductor, a junction portion (3) between the first and the second superconducting portions (1,2), which is constituted of a single crystal of the oxide superconductor of which crystal orientation is different from that of the first and second superconducting portions, and grain boundaries (31,32) between the first superconducting portion (1) and the junction portion (3) and between the second superconducting portion (2) and the junction portion (3) which constitute one weak link of the Josephson junction.
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公开(公告)号:DE69018539D1
公开(公告)日:1995-05-18
申请号:DE69018539
申请日:1990-07-31
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: NAKANISHI HIDENORI , ITOZAKI HIDEO , MATSUURA TAKASHI
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公开(公告)号:AU655731B2
公开(公告)日:1995-01-05
申请号:AU5030693
申请日:1993-10-26
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: TANAKA SABURO , NAKANISHI HIDENORI , ITOZAKI HIDEO , MATSUURA TAKASHI
Abstract: Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order. In the ivention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is heated at a temperature between 200 and 400 DEG C during the non-superconducting intermediate thin film layer is deposited.
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公开(公告)号:CA2047020A1
公开(公告)日:1992-01-14
申请号:CA2047020
申请日:1991-07-15
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: HARADA KEIZO , TANAKA SABURO , NAKANISHI HIDENORI , MATSUURA TAKASHI , HIGAKI KENJIRO , NAGAISHI TATSUOKI , HATTORI HISAO , ITOZAKI HIDEO
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公开(公告)号:DE112016002978T5
公开(公告)日:2018-06-07
申请号:DE112016002978
申请日:2016-06-01
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: ADACHI MASAHIRO , MATSUURA TAKASHI
Abstract: Die vorliegende Erfindung betrifft ein thermoelektrisches Material, das aus Nanostrukturen gebildet ist, ein thermoelektrisches Element und einen optischen Sensor, die dieses enthält, sowie ein Verfahren zur Herstellung eines thermoelektrischen Materials, das aus Nanostrukturen besteht. Eine Aufgabe der vorliegenden Erfindung besteht darin, ein Nanoteilchen enthaltendes thermoelektrisches Material bereitzustellen, das verbesserte thermoelektrische Eigenschaften erzielt. Das thermoelektrische Material umfasst ein erstes Material mit einer Bandlücke und ein zweites Material, das sich von dem ersten Material unterscheidet. Das thermoelektrische Material enthält mehrere Nanoteilchen, die in einem Basismaterial verteilt sind, das ein Gemisch aus dem ersten Material und dem zweiten Material ist. Eine Zusammensetzung des zweiten Materials in dem thermoelektrischen Material ist nicht kleiner als 0,01 Atom-% und nicht größer als 2,0 Atom-% des thermoelektrischen Materials.
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