12.
    发明专利
    未知

    公开(公告)号:DE69316258T2

    公开(公告)日:1998-07-23

    申请号:DE69316258

    申请日:1993-04-22

    Abstract: A microwave component includes a superconducting signal conductor (10) formed on a first dielectric substrate (20) and a superconducting ground conductor (30) formed on a second dielectric substrate (40). The first dielectric substrate (20) is staked on the superconducting ground conductor (10) of the second dielectric substrate (40). Each of the superconducting signal conductor (10) and the superconducting ground conductor (30) is formed of an oxide superconductor thin film of which crystals are orientated in such a manner that the c-planes of the crystals are parallel to the direction in which an electro-magnetic field generated by microwave launched to the microwave component changes.

    JOSEPHSON JUNCTION DEVICE OF OXIDE SUPERCONDUCTOR AND PROCESS FOR PREPARING THE SAME

    公开(公告)号:CA2073831C

    公开(公告)日:1997-11-18

    申请号:CA2073831

    申请日:1992-07-14

    Abstract: A Josephson junction device includes a substrate, an oxide thin film formed on a portion of the principal surface of the substrate, which is constituted of a single crystal of which lattices shift at angle of 45.degree. to that of the principal surface of the substrate. One of the two portions of the oxide superconductor thin film is formed on the oxide thin film and the other portion of the superconductor thin film is formed on the principal surface of the substrate directly so that the lattices of the two portions of the oxide superconductor thin film are respectively linear up to those of the oxide thin film and the principal surface of the substrate and the grain boundary. The grain boundary which constitutes a weak link of the Josephson junction is formed just on the step portion formed of the oxide thin film.

    16.
    发明专利
    未知

    公开(公告)号:DE69300940T2

    公开(公告)日:1996-06-27

    申请号:DE69300940

    申请日:1993-05-28

    Abstract: A Josephson junction device comprising a single crystalline substrate (5) including a principal surface, a layer (15) of the same material as the substrate formed on the principal surface of the substrate so as to form a step on the principal surface, and an oxide superconductor thin film (10) formed on the principal surface of the substrate (5). The oxide superconductor thin film includes a first and a second superconducting portion (1,2) respectively positioned above and below the step, which are constituted of single crystals of the oxide superconductor, a junction portion (3) between the first and the second superconducting portions (1,2), which is constituted of a single crystal of the oxide superconductor of which crystal orientation is different from that of the first and second superconducting portions, and grain boundaries (31,32) between the first superconducting portion (1) and the junction portion (3) and between the second superconducting portion (2) and the junction portion (3) which constitute one weak link of the Josephson junction.

    Thermoelektrisches Material, thermoelektrisches Element, optischer Sensor und Verfahren zur Herstellung eines thermoelektrischen Materials

    公开(公告)号:DE112016002978T5

    公开(公告)日:2018-06-07

    申请号:DE112016002978

    申请日:2016-06-01

    Abstract: Die vorliegende Erfindung betrifft ein thermoelektrisches Material, das aus Nanostrukturen gebildet ist, ein thermoelektrisches Element und einen optischen Sensor, die dieses enthält, sowie ein Verfahren zur Herstellung eines thermoelektrischen Materials, das aus Nanostrukturen besteht. Eine Aufgabe der vorliegenden Erfindung besteht darin, ein Nanoteilchen enthaltendes thermoelektrisches Material bereitzustellen, das verbesserte thermoelektrische Eigenschaften erzielt. Das thermoelektrische Material umfasst ein erstes Material mit einer Bandlücke und ein zweites Material, das sich von dem ersten Material unterscheidet. Das thermoelektrische Material enthält mehrere Nanoteilchen, die in einem Basismaterial verteilt sind, das ein Gemisch aus dem ersten Material und dem zweiten Material ist. Eine Zusammensetzung des zweiten Materials in dem thermoelektrischen Material ist nicht kleiner als 0,01 Atom-% und nicht größer als 2,0 Atom-% des thermoelektrischen Materials.

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