公开(公告)号：DE69205911T3

公开(公告)日：2000-03-09

申请号：DE69205911

申请日：1992-07-28

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： ITOZAKI HIDEO ,  NAGAISHI TATSUOKI ,  NAKANISHI HIDENORI ,  TANAKA SABURO

IPC: C23C14/34 ,  C23C14/28 ,  C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L21/203 ,  H01L39/24

Abstract: Improvement in a method for preparing a superconducting thin film of compound oxide on a substrate (6) by laser evaporation technique. A rear surface of a target (7)used is cooled forcedly by a cooling system (9) during film formation.

公开(公告)号：DE69032845T2

公开(公告)日：1999-07-08

申请号：DE69032845

申请日：1990-04-02

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAKANISHI HIDENORI ,  TANAKA SABURO ,  ITOZAKI HIDEO ,  YAZU SHUJI

IPC: H01L39/22 ,  H01L39/24

Abstract: A tunnel junction type Josephson device includes a pair of superconductor layers (2,4) formed of a compound oxide superconductor material and an insulator layer (3) formed between the pair of superconductor layers (2,4). The insulator layer (3) is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of the superconductor layers but with an atomic ratio which does not present a superconductivity characteristics. In addition, the superconductor layers and the insulator layer are continuously formed while supplying oxygen.

公开(公告)号：DE69318473T2

公开(公告)日：1999-01-28

申请号：DE69318473

申请日：1993-05-28

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA SABURO ,  MATSUURA TAKASHI ,  ITOZAKI HIDEO

IPC: H01L39/22 ,  H01L39/24

公开(公告)号：DE69318473D1

公开(公告)日：1998-06-18

申请号：DE69318473

申请日：1993-05-28

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA SABURO ,  MATSUURA TAKASHI ,  ITOZAKI HIDEO

IPC: H01L39/22 ,  H01L39/24

公开(公告)号：CA2073831C

公开(公告)日：1997-11-18

申请号：CA2073831

申请日：1992-07-14

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： ITOZAKI HIDEO ,  TANAKA SABURO ,  MATSUURA TAKASHI

IPC: H01L39/22 ,  H01L39/24

Abstract: A Josephson junction device includes a substrate, an oxide thin film formed on a portion of the principal surface of the substrate, which is constituted of a single crystal of which lattices shift at angle of 45.degree. to that of the principal surface of the substrate. One of the two portions of the oxide superconductor thin film is formed on the oxide thin film and the other portion of the superconductor thin film is formed on the principal surface of the substrate directly so that the lattices of the two portions of the oxide superconductor thin film are respectively linear up to those of the oxide thin film and the principal surface of the substrate and the grain boundary. The grain boundary which constitutes a weak link of the Josephson junction is formed just on the step portion formed of the oxide thin film.

公开(公告)号：DE69125129D1

公开(公告)日：1997-04-17

申请号：DE69125129

申请日：1991-12-26

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MATSUURA TAKASHI ,  TANAKA SABURO ,  ITOZAKI HIDEO

IPC: H01L39/22 ,  H01L39/24

公开(公告)号：CA2027067C

公开(公告)日：1996-07-23

申请号：CA2027067

申请日：1990-10-05

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA SABURO ,  ITOZAKI HIDEO ,  YAZU SHUJI

IPC: H01L39/24 ,  H01L21/465

Abstract: A method for forming an oxide superconductor thin film having different thickness portions, in a process for manufacturing a superconductor device, includes the step of forming an oxide superconductor thin film having a uniform thickness on a substrates. A portion of the oxide superconductor thin film is etch-removed so that the oxide superconductor thin film has a thin thickness portion. Preferably, before the etching, the oxide superconductor thin film is coated with a metal layer, and the oxide superconductor thin film and the metal layer are etched together by means of a physical dry etching process.

公开(公告)号：CA2013643C

公开(公告)日：1996-07-09

申请号：CA2013643

申请日：1990-04-02

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAKANISHI HIDENORI ,  TANAKA SABURO ,  ITOZAKI HIDEO ,  YAZU SHUJI

IPC: H01L39/22 ,  H01L39/24

Abstract: A tunnel junction type Josephson device includes a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers. The insulator layer is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of the superconductor layers but with an atomic ratio which does not present a superconductivity characteristics. In addition, the superconductor layers and the insulator layer are continuously formed while supplying oxygen.

公开(公告)号：DE69300940T2

公开(公告)日：1996-06-27

申请号：DE69300940

申请日：1993-05-28

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA SABURO ,  MATSUURA TAKASHI ,  ITOZAKI HIDEO

IPC: H01L39/22 ,  H01L39/24

Abstract: A Josephson junction device comprising a single crystalline substrate (5) including a principal surface, a layer (15) of the same material as the substrate formed on the principal surface of the substrate so as to form a step on the principal surface, and an oxide superconductor thin film (10) formed on the principal surface of the substrate (5). The oxide superconductor thin film includes a first and a second superconducting portion (1,2) respectively positioned above and below the step, which are constituted of single crystals of the oxide superconductor, a junction portion (3) between the first and the second superconducting portions (1,2), which is constituted of a single crystal of the oxide superconductor of which crystal orientation is different from that of the first and second superconducting portions, and grain boundaries (31,32) between the first superconducting portion (1) and the junction portion (3) and between the second superconducting portion (2) and the junction portion (3) which constitute one weak link of the Josephson junction.

公开(公告)号：CA2043541C

公开(公告)日：1996-03-19

申请号：CA2043541

申请日：1991-05-30

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA SABURO ,  NAKANISHI HIDENORI ,  ITOZAKI HIDEO

IPC: H01L39/24

Abstract: Improvement in a process for preparing a-axis oriented thin film of high-Tc oxide superconducting material by laser evaporation method. Before the a-axis oriented thin film of oxide superconducting material is deposited by laser evaporation method, an under-layer having an a-axis orientation of the crystal of the same oxide superconducting material is deposited on a substrate previously by sputtering.