THIN FILM TRANSISTOR ARRAY PANEL AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME
    11.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME 有权
    薄膜晶体管阵列面板和有机发光显示装置,包括它们

    公开(公告)号:US20160111482A1

    公开(公告)日:2016-04-21

    申请号:US14713933

    申请日:2015-05-15

    Abstract: A thin film transistor (TFT) circuit panel comprises a substrate and first and second patterned multi-layer structures formed over the substrate. The first patterned multi-layer structure is to provide a driving TFT and a storage capacitor, and comprises: a semiconductor layer, a first electrode over the semiconductor layer, a second electrode disposed over the first electrode and insulated from the first electrode, a storage insulating layer disposed between the first electrode and the second electrode, and a driving gate insulating layer disposed between the semiconductor layer and the first electrode. The second patterned multi-layer structure is spaced from the first multi-layer structure, and comprises: a lower patterned insulating layer, a patterned conductive layer and a top patterned insulating layer. An organic insulating material is filled between the first and second patterned multi-layer structures.

    Abstract translation: 薄膜晶体管(TFT)电路板包括衬底和形成在衬底上的第一和第二图案化多层结构。 第一图案化多层结构是提供驱动TFT和存储电容器,并且包括:半导体层,半导体层上的第一电极,设置在第一电极上并与第一电极绝缘的第二电极, 设置在第一电极和第二电极之间的绝缘层,以及设置在半导体层和第一电极之间的驱动栅极绝缘层。 第二图案化多层结构与第一多层结构隔开,并且包括:下图案化绝缘层,图案化导电层和顶部图案化绝缘层。 有机绝缘材料填充在第一和第二图案化多层结构之间。

    DISPLAY APPARATUS
    12.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号:US20240324399A1

    公开(公告)日:2024-09-26

    申请号:US18403079

    申请日:2024-01-03

    CPC classification number: H10K59/872

    Abstract: A display apparatus includes a first insulating layer disposed on a substate and including an opening filled with an organic material and a first-first insulating portion arranged inside the opening, a second insulating layer disposed on the first insulating layer and including a first-first through-hole filled with the organic material and connected to the opening and a first-second insulating portion arranged inside the first-first through-hole, a third insulating layer disposed on the second insulating layer and including a first-second through-hole filled with the organic material and connected to the first-first through-hole, a target arranged between the first-first insulating portion and the first-second insulating portion and arranged inside the first-first through-hole, and a shield portion disposed on the second insulating layer or the third insulating layer and overlapping the target in a plan view.

    DISPLAY DEVICE
    15.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号:US20160126303A1

    公开(公告)日:2016-05-05

    申请号:US14693737

    申请日:2015-04-22

    Abstract: A display device is disclosed. In one aspect, the device includes a substrate including a display area displaying an image via a plurality of pixels and a non-display area adjacent to the display area. The device also includes a first line and a second line in the display area. The display device also includes a first connection line and a second connection line in the non-display area, wherein the first and second connection lines are respectively connected to the first and second lines and extend in different directions to cross each other. The display device also includes an insulating layer formed over the substrate and including a first portion and a second portion, the first portion corresponding to the display area and the second portion corresponds to a crossing area where the first and second connection lines cross each other, the thickness of the first and second portions are different.

    Abstract translation: 公开了一种显示装置。 一方面,该装置包括:基板,包括经由多个像素显示图像的显示区域和与显示区域相邻的非显示区域。 该设备还包括显示区域中的第一行和第二行。 显示装置还包括在非显示区域中的第一连接线和第二连接线,其中第一和第二连接线分别连接到第一和第二线并且在不同方向上延伸以彼此交叉。 显示装置还包括形成在基板上的绝缘层,包括第一部分和第二部分,对应于显示区域的第一部分和第二部分对应于第一和第二连接线彼此交叉的交叉区域, 第一和第二部分的厚度是不同的。

    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    16.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号:US20160099257A1

    公开(公告)日:2016-04-07

    申请号:US14709844

    申请日:2015-05-12

    Abstract: A thin film transistor includes an active pattern formed on a substrate; a gate pattern formed on the active pattern and comprising a gate electrode and a gate line; a gate insulating layer disposed between the gate pattern and the active pattern; a source electrode that overlaps a first side of the active pattern and contacts a data line; a drain electrode that overlaps a second side of the active pattern and is separated from the source electrode; a channel area formed in an area where the gate line and an active line of the active pattern overlap each other; and a gate line modifying unit formed in the channel area by changing a linear shape of the gate line.

    Abstract translation: 薄膜晶体管包括形成在衬底上的有源图案; 形成在有源图案上并包括栅电极和栅极线的栅极图案; 设置在所述栅极图案和所述有源图案之间的栅极绝缘层; 源电极,与有源图案的第一侧重叠并接触数据线; 漏电极,与所述有源图案的第二面重叠,并与所述源电极分离; 形成在活动图案的栅极线和有源线重叠的区域中的沟道区域; 以及通过改变栅极线的线性形状而形成在沟道区中的栅极线修改单元。

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