Abstract:
For a display apparatus with excellent durability, the display apparatus includes a substrate, a first organic insulating layer disposed on the substrate, a first conductive pattern disposed on the first organic insulating layer, a first inorganic insulating layer interposed between the first organic insulating layer and the first conductive pattern and patterned to have a same shape as the first conductive pattern, and a first transparent conductive layer disposed on the first conductive pattern and patterned to have a same shape as the first conductive pattern.
Abstract:
A thin film transistor (TFT) circuit panel comprises a substrate and first and second patterned multi-layer structures formed over the substrate. The first patterned multi-layer structure is to provide a driving TFT and a storage capacitor, and comprises: a semiconductor layer, a first electrode over the semiconductor layer, a second electrode disposed over the first electrode and insulated from the first electrode, a storage insulating layer disposed between the first electrode and the second electrode, and a driving gate insulating layer disposed between the semiconductor layer and the first electrode. The second patterned multi-layer structure is spaced from the first multi-layer structure, and comprises: a lower patterned insulating layer, a patterned conductive layer and a top patterned insulating layer. An organic insulating material is filled between the first and second patterned multi-layer structures.
Abstract:
A display device is disclosed. In one aspect, the device includes a substrate including a display area displaying an image via a plurality of pixels and a non-display area adjacent to the display area. The device also includes a first line and a second line in the display area. The display device also includes a first connection line and a second connection line in the non-display area, wherein the first and second connection lines are respectively connected to the first and second lines and extend in different directions to cross each other. The display device also includes an insulating layer formed over the substrate and including a first portion and a second portion, the first portion corresponding to the display area and the second portion corresponds to a crossing area where the first and second connection lines cross each other, the thickness of the first and second portions are different.
Abstract:
A pixel includes a first transistor to output a current supplied to a light-emitting device, a second transistor electrically connected between a gate of the first transistor and a first terminal of the first transistor, a third transistor electrically connected between the first voltage line and a second terminal of the first transistor, a fourth transistor electrically connected between the first terminal of the first transistor and the light-emitting device, and a fifth transistor configured to supply a bias voltage to the second terminal of the first transistor. A gate-on voltage may be supplied to a gate of the fifth transistor during a portion of a period during which a gate-off voltage may be supplied to a gate of the third transistor and a gate of the fourth transistor.
Abstract:
A display apparatus includes a first pixel area and a second pixel area adjacent to each other along a first direction, a first boundary between the first pixel area and the second pixel area, a first insulating layer which is in the first and second pixel areas, a first trench which is defined in the first insulating layer and corresponds to the first boundary, a first pixel separation layer which is in the first trench, the first pixel separation layer and including a material different from a material of the first insulating layer, and a first conductive line which connects the first pixel area to the second pixel area, the first conductive line being between the first insulating layer and the first pixel separation layer.
Abstract:
A display apparatus includes: a first conductive line extending in a first direction, and including a plurality of first conductive patterns that are spaced from each other; and a first connection line extending in the first direction on the first conductive line, and including a plurality of first connection patterns that are spaced from each other, the plurality of first connection patterns connecting the plurality of first conductive patterns to each other. In a plan view, the plurality of first conductive patterns and the plurality of first connection patterns are alternately located with each other along the first direction.
Abstract:
A thin-film transistor (TFT) array substrate includes: a driving TFT provided on a substrate; and a switching TFT provided on the substrate and including: a switching semiconductor layer including a switching channel region, a switching source region, and a switching drain region; and a switching source electrode and a switching drain electrode contacting the switching semiconductor layer. The switching source electrode includes a source contact portion contacting the switching source region, and the switching drain electrode includes a drain contact portion contacting the switching drain region. The source contact portion is doped with ions that are different from ions of the switching source region and the drain contact portion is doped with ions that are different from ions of the switching drain region.
Abstract:
A method of manufacturing an organic light-emitting display apparatus using a light-blocking photoresist layer which minimizes damage to an intermediate layer, including an emission layer, during a process for manufacturing the organic light-emitting display apparatus.
Abstract:
A method of manufacturing an organic light-emitting display apparatus using a light-blocking photoresist layer which minimizes damage to an intermediate layer, including an emission layer, during a process for manufacturing the organic light-emitting display apparatus.
Abstract:
A thin-film transistor (TFT) array substrate includes: a driving TFT provided on a substrate; and a switching TFT provided on the substrate and including: a switching semiconductor layer including a switching channel region, a switching source region, and a switching drain region; and a switching source electrode and a switching drain electrode contacting the switching semiconductor layer. The switching source electrode includes a source contact portion contacting the switching source region, and the switching drain electrode includes a drain contact portion contacting the switching drain region. The source contact portion is doped with ions that are different from ions of the switching source region and the drain contact portion is doped with ions that are different from ions of the switching drain region.