公开(公告)号：US11562218B2

公开(公告)日：2023-01-24

申请号：US16868845

申请日：2020-05-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungju Ryu ,  Hyungjun Kim ,  Jae-Joon Kim

IPC: G06N3/063 ,  G06F7/485 ,  G06F7/523

Abstract: Disclosed is a neural network accelerator including a first bit operator generating a first multiplication result by performing multiplication on first feature bits of input feature data and first weight bits of weight data, a second bit operator generating a second multiplication result by performing multiplication on second feature bits of the input feature data and second weight bits of the weight data, an adder generating an addition result by performing addition based on the first multiplication result and the second multiplication result, a shifter shifting a number of digits of the addition result depending on a shift value to generate a shifted addition result, and an accumulator generating output feature data based on the shifted addition result.

公开(公告)号：US20220093689A1

公开(公告)日：2022-03-24

申请号：US17194372

申请日：2021-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungyeon Kwak ,  Byungjoon Kang ,  Hyungjun Kim ,  Myungsun Sim ,  Kum Hee Lee ,  Banglin Lee ,  Sunghun Lee ,  Byoungki Choi ,  Kyuyoung Hwang

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/00

Abstract: A display apparatus includes: an organic light emitting diode (OLED) structure including in which at least one blue light-emitting unit and at least one green light-emitting unit are stacked to provide incident light in which the blue incident light and the green incident light are mixed; a first pixel, a second pixel, and a third pixel disposed on the OLED structure; color conversion layers disposed on at least two of the first, the second, or the third pixels, and including quantum dots for converting the mixed incident from the OLED structure into light of a predetermined color; and first, second, and third color filters disposed on the first, the second, and the third pixels, respectively, to absorb or block light of a predetermined wavelength band, wherein a conversion value of an area of a spectrum in a wavelength region of 380 nanometers to 780 nanometers of the green incident light with respect to a difference between a wavelength at the maximum transmittance of the second color filter and the medial wavelength of the incident green light (Δλ) may be 3.6 or greater and 13 or less.

公开(公告)号：US20230397484A1

公开(公告)日：2023-12-07

申请号：US18328180

申请日：2023-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bumwoo Park ,  Ohyun Kwon ,  Byungjoon Kang ,  Sungmin Kim ,  Hyungjun Kim ,  Hwayoung Cho ,  Byoungki Choi

IPC: H10K85/30 ,  H10K50/11 ,  H10K50/15

CPC classification number: H10K85/342 ,  H10K50/11 ,  H10K50/15

Abstract: An organometallic compound represented by Formula 1:


M1(L1)n1(L2)n2  Formula 1

wherein, M1 is a transition metal, L1 is ligand represented by Formula 1A, L2 is a ligand represented by Formula 1B, and n1 and n2 are each independently 1 or 2:




wherein, X1 to X4 are each C or N, ring CY1 and ring CY2 are each independently a C5-C30 carbocyclic group or a C1-C30 heterocyclic group, ring CY3 is a 6-membered heterocyclic group, a 6-membered heterocyclic group condensed with a C5-C30 carbocyclic group, or a 6-membered heterocyclic group condensed with a C1-C30 heterocyclic group, ring CY41 is a 5-membered carbocyclic group or a 5-membered heterocyclic group, Y1 is O, S, Se, C(R6)(R7), or N(R8), * and *′ each indicate a binding site to M1, and the remaining description of Formulae 1A and 2B is as described herein.

公开(公告)号：US11791373B2

公开(公告)日：2023-10-17

申请号：US17306310

申请日：2021-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjun Kim ,  Changsoo Lee ,  Chan Kwak ,  Euncheol Do

IPC: H01L21/00 ,  H01L49/02

CPC classification number: H01L28/56 ,  H01L28/65

Abstract: Provided is a method of preparing a dielectric film having a nanoscale three-dimensional shape and including an oxide, the oxide represented by RAMBOC where R is a divalent element and M is a pentavalent element, the method may include synthesizing a target material, the target material including the divalent element and the pentavalent element; and forming the oxide by depositing the divalent element and the pentavalent element, from the target material, onto a substrate such that the oxide includes a perovskite-type crystal structure, 1.3

公开(公告)号：US11681899B2

公开(公告)日：2023-06-20

申请号：US16561378

申请日：2019-09-05

Applicant: Samsung Electronics Co., Ltd. ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Sungho Kim ,  Yulhwa Kim ,  Hyungjun Kim ,  Jae-Joon Kim ,  Jinseok Kim

IPC: G06N20/00 ,  G06N3/02 ,  G06N3/045 ,  G06N3/08 ,  G06N3/063

CPC classification number: G06N3/045 ,  G06N3/02 ,  G06N3/063 ,  G06N3/08 ,  G06N20/00

Abstract: A method of implementing a neural network in a neuromorphic apparatus having a memory and processing circuitry, where the method includes dividing, by the processing circuitry, the neural network into a plurality of sub-networks based on a size of a core of the memory to implement the neural network, initializing, by the processing circuitry, a hyper-parameter used in the sub-networks, and training, by the processing circuitry, the sub-networks by using the hyper-parameter.

公开(公告)号：US20230183278A1

公开(公告)日：2023-06-15

申请号：US18063152

申请日：2022-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bumwoo Park ,  Ohyun Kwon ,  Jeoungin Yi ,  Virendra Kumar RAI ,  Hyungjun Kim ,  Byoungki Choi

IPC: C07F15/00

CPC classification number: C07F15/0033

Abstract: An organometallic compound represented by Formula 1:


M1(Ln1)n1(Ln2)n2

wherein, in Formula 1, M1 is a transition metal; Ln1 is a ligand represented by Formula 1A; Ln2 is a ligand represented by Formula 1B; n1 is 1 or 2; and n2 is 1 or 2,




wherein X1 is C or N, X2 is C or N, Y2 is O or S, and the other substituents are as described in the detailed description.

公开(公告)号：US20230110705A1

公开(公告)日：2023-04-13

申请号：US17841088

申请日：2022-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ohyun Kwon ,  Virendra Kumar RAI ,  Bumwoo Park ,  Sangdong Kim ,  Hyungjun Kim ,  Byoungki Choi

IPC: H01L51/00 ,  C07F15/00 ,  C09K11/06

Abstract: An organometallic compound, represented by Formula 1: M1(Ln1)n1(Ln2)n2  Formula 1 wherein, in Formula 1, M1 is a transition metal, Ln1 is a ligand represented by Formula 1A, Ln2 is a ligand represented by Formula 1B, n1 is 1 or 2, and n2 is 1 or 2: wherein the substituents of Formulae 1A and 1B are as provided herein in the detailed description.

公开(公告)号：US20220089624A1

公开(公告)日：2022-03-24

申请号：US17199644

申请日：2021-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bumwoo Park ,  Ohyun Kwon ,  Virendra Kumar RAI ,  Hyungjun Kim ,  Myungsun Sim ,  Byoungki Choi ,  Yasushi KOISHIKAWA

IPC: C07F15/00 ,  H01L51/00

Abstract: An organometallic compound represented by Formula 1: M1(Ln1)n1(Ln2)3-n1  Formula 1 wherein M1 is a first-row transition metal of the Periodic Table of Elements, a second-row transition metal of the Periodic Table of Elements, or a third-row transition metal of the Periodic Table of Elements, Ln1 is a bidentate ligand, n1 is 0, 1, or 2, and Ln2 is a ligand represented by Formula 1A: wherein A1, A2, Y1, Y2, R1 to R3, R10, R20, b10, and b20 are as provided herein, and * and *′ each indicate a binding site to a neighboring atom.

公开(公告)号：US10043984B2

公开(公告)日：2018-08-07

申请号：US14969257

申请日：2015-12-15

Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd.

Inventor： Soonok Jeon ,  Sangmo Kim ,  Hyungjun Kim ,  Yeonsook Chung ,  Yongsik Jung ,  Miyoung Chae ,  Dalho Huh ,  Joonghyuk Kim ,  Sooghang Ihn

IPC: H01L51/00 ,  C07D401/10 ,  C09K11/02 ,  C09K11/06 ,  H01L51/50

Abstract: A condensed cyclic compound represented by Formula 1, comprising at least one cyano (—CN) group: wherein, in Formula 1, groups and variables are the same as described in the specification.

公开(公告)号：US12087554B2

公开(公告)日：2024-09-10

申请号：US16905018

申请日：2020-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungyeon Kim ,  Jungpyo Hong ,  Kwangnam Kim ,  Hyungjun Kim ,  Jongwoo Sun

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32743 ,  H01L21/67069 ,  H01J2237/334

Abstract: A substrate treating apparatus, including a process chamber having a bottom portion configured to secure a substrate while a substrate treating process is performed on the substrate; and a dielectric window arranged at an upper portion of the process chamber to define a process space, and including: an insulative body, an antenna disposed on an upper surface of the insulative body, a protection layer disposed on a lower surface of the insulative body, and an etch resistor protruding from at least a portion of the protection layer toward the process space, wherein, based on power being applied to the antenna, a plasma is generated in the process space, and wherein the insulative body is protected from the plasma by the protection layer and the etch resistor.