Abstract:
Various disclosed aspects provide for protecting components (e.g., integrated circuits) from spurious electrical overvoltage events, such as electrostatic discharge. Embedded components with voltage switchable dielectric materials may protect circuits against electrostatic discharge.
Abstract:
Various aspects provide for structures and devices to protect against spurious electrical events (e.g., electrostatic discharge). Some embodiments incorporate a voltage switchable dielectric material (VSDM) bridging a gap between two conductive pads. Normally insulating, the VSDM may conduct current from one pad to the other during a spurious electrical event (e.g,. shunting current to ground). Some aspects include gaps having a gap width that is greater than 50% of a spacing between electrical leads connected to the pads. Some devices include single layers of VSDM. Some devices include multiple layers of VSDM. Various devices may be designed to increase a ratio of active volume (of VSDM) to inactive volume.
Abstract:
A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shelled particles that individually comprise a conductor core and a shell, the shell of each core shelled particle being (i) multilayered, and/or (ii) heterogeneous. As depicted, VSD material 100 includes matrix binder 105 and various types of particle constituents, dispersed in the binder in various concentrations. The particle constituents of the VSD material may include a combination of conductive particles 110, semiconductor particles 120, nano-dimensioned particles 130 and/or core shelled particles 140. In some implementations, the core shelled particles may substitute for some or all of the conductive particles. As an alternative or variation, the VSD composition may omit the use of conductive particles, semiconductive particles, or nano-dimensioned particles, particularly with the presence of a concentration of core shelled particles. Thus, the type of particle constituent that are included in the VSD composition may vary, depending on the desired electrical and physical characteristics of the VSD material. For example, some VSD compositions may include conductive particles, but not semiconductive particles and/or nano-dimensioned particles (like carbon nanotube). Still further, other embodiments may omit use of conductive particles.
Abstract:
Embodiments described herein provide for a composition of voltage switchable dielectric (VSD) material that includes a concentration of modified high-aspect ratio (HAR) particles. In an embodiment, at least a portion of the concentration includes HAR particles are surface-modified to provide core-shell HAR particles. As an alternative or addition, a portion of the concentration includes HAR particles that are surface-modified to have activated surfaces.
Abstract:
A circuit comprising an array of light emitting diodes (LEDs), and a layer of VSD material positioned to contact an input and an output of each LED in the array of LEDs, so as to protect each LED from both a forward surge and a reverse surge of voltage on the array of LEDs. The layer of VSD material is able to switch into a carrying current state in response to either of the forward or reverse surge exceed a characteristic voltage level (VCL) of the VSD material.
Abstract:
Printed circuit boards including voltage switchable dielectric materials (VSDM) are disclosed. The VSDMs are used to protect electronic components, arranged on or embedded in printed circuit boards, against electric discharges, such as electrostatic discharges or electric overstresses. During an overvoltage event, a VSDM layer shunts excess currents to ground, thereby preventing electronic components from destruction or damage.
Abstract:
An electroplating process is performed using a substrate that includes a thickness of voltage switchable dielectric (VSD) material having photoactive components that are dispersed, mixed or dissolved in a binder of the VSD material. A pattern of conductive elements may be formed on the substrate by switching the VSD material from a dielectric state to a conductive state using, in part, voltage generated by directing light onto the thickness and VSD material.
Abstract:
Ferroic circuit elements that include a set of conductive structures that are at least partially embedded within a ferroic medium are disclosed. The ferroic medium may be a voltage switched dielectric material that includes ferroic particles in accordance with various embodiments. A ferroic circuit element may be at least partially embedded within a substrate in accordance with embodiments of the current invention as an embedded ferroic circuit element. An embedded ferroic circuit element that is an inductor in accordance with embodiments of the current invention may be denoted as an embedded ferroic inductor. An embedded ferroic circuit element that is a capacitor in accordance with embodiments of the current invention may be denoted as an embedded ferroic capacitor.
Abstract:
A substrate device includes a layer of non-linear resistive transient protective material and a plurality of conductive elements that form part of a conductive layer. The conductive elements include a pair of electrodes that are spaced by a gap, but which electrically interconnect when the transient protective material is conductive. The substrate includes features to linearize a transient electrical path that is formed across the gap.