Galvanic Isolation Device
    11.
    发明申请

    公开(公告)号:US20180269272A1

    公开(公告)日:2018-09-20

    申请号:US15462741

    申请日:2017-03-17

    CPC classification number: H01L28/60 H01L23/49575 H01L23/66 H01L2223/6611

    Abstract: A galvanic isolation device includes a first integrated circuit (IC) die that has communication circuitry formed in a circuit layer below the top surface. A first conductive plate is formed on the IC die proximate the top surface, and is coupled to the communication circuitry. A dielectric isolation layer is formed over a portion of the top surface of the IC after the IC is fabricated such that the dielectric isolation layer completely covers the conductive plate. A second conductive plate is juxtaposed with the first conductive plate but separated by the dielectric isolation layer such that the first conductive plate and the second conductive plate form a capacitor. The second conductive plate is configured to be coupled to a second communication circuit.

    Root mean square sensor device
    14.
    发明授权

    公开(公告)号:US11884538B2

    公开(公告)日:2024-01-30

    申请号:US17487203

    申请日:2021-09-28

    Abstract: A sensor device includes a first and second Micro-Electro-Mechanical (MEM) structures. The first MEM structure includes a first heating element on a first layer of the first MEM structure. The first heating element includes an input adapted to receive an input signal. The first MEM structure also includes a first temperature sensing element on a second layer of the first MEM structure. The second MEM structure includes a second heating element on a first layer of the second MEM structure and a second temperature sensing element on a second layer of the second MEM structure. An output circuit has a first input coupled to the first temperature sensing element and a second input coupled to the second temperature sensing element.

    SEMICONDUCTOR PACKAGE WITH TOP CIRCUIT AND AN IC WITH A GAP OVER THE IC

    公开(公告)号:US20220208657A1

    公开(公告)日:2022-06-30

    申请号:US17698855

    申请日:2022-03-18

    Abstract: A packaged integrated circuit (IC) includes a leadframe including a die pad and leads around the die pad, an analog IC die having first bond pads on its active top side, and a second circuit including second circuit bond pads attached to the analog IC die by an attachment layer configured as a ring with a hollow center that provides an inner gap. A bottom side of the analog IC or the second circuit is attached to the die pad. Bond wires couple at least some of the first bond pads or some of the second circuit bond pads to the leads, and there is a second coupling between others of the second circuit bond pads and others of the first bond pads. A mold compound is for encapsulating the second circuit and the analog IC.

    Galvanic isolation device
    19.
    发明授权

    公开(公告)号:US10529796B2

    公开(公告)日:2020-01-07

    申请号:US16178352

    申请日:2018-11-01

    Abstract: A galvanic isolation device includes a first integrated circuit (IC) die that has communication circuitry formed in a circuit layer below the top surface. A first conductive plate is formed on the IC die proximate the top surface, and is coupled to the communication circuitry. A dielectric isolation layer is formed over a portion of the top surface of the IC after the IC is fabricated such that the dielectric isolation layer completely covers the conductive plate. A second conductive plate is juxtaposed with the first conductive plate but separated by the dielectric isolation layer such that the first conductive plate and the second conductive plate form a capacitor. The second conductive plate is configured to be coupled to a second communication circuit.

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