公开(公告)号：US20240170265A1

公开(公告)日：2024-05-23

申请号：US18388974

申请日：2023-11-13

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32091 ,  H01J37/32522 ,  H01J37/3255 ,  H01J37/32715

Abstract: The plasma processing apparatus includes a processing container, a substrate holder that is inserted into the processing container and places a plurality of substrates in multiple tiers, a rotation shaft that rotates the substrate holder inside the processing container, a gas supply pipe that supplies a processing gas into the processing container, an exhauster that evacuates an inside of the processing container, a pair of electrodes arranged outside the processing container to face each other across a center of the processing container, and a radio-frequency power supply that applies radio-frequency power to the pair of electrodes, thereby generating capacitively-coupled plasma inside the processing container.

公开(公告)号：US20240014005A1

公开(公告)日：2024-01-11

申请号：US18217896

申请日：2023-07-03

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA ,  Nobuo MATSUKI ,  Taro IKEDA

IPC: H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32091 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32541 ,  H01J37/3417

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and forms an internal space communicating with an inside of the processing container, an internal electrode that passes through the partition wall, is detachably and airtightly inserted into the internal space, and is supplied with RF power, and an external electrode provided outside the partition wall.

公开(公告)号：US20230245870A1

公开(公告)日：2023-08-03

申请号：US18101676

申请日：2023-01-26

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Hiroyuki MATSUURA ,  Satoru KAWAKAMI

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/46

CPC classification number: H01J37/32724 ,  H01J37/32568 ,  H01J37/32174 ,  H01J37/32541 ,  C23C16/45536 ,  C23C16/46 ,  H01J2237/201 ,  H01J2237/20235 ,  H01J2237/332

Abstract: A plasma processing apparatus includes: a substrate holder configured to place a plurality of substrates in a multi-stage structure in a height direction on the substrate holder; and a processing container in which the substrate holder is accommodated and including a heating part that heats the plurality of substrates, wherein the substrate holder is provided with a plurality of stages made of a dielectric material, and a first electrode layer and a second electrode layer embedded in the plurality of stages.

公开(公告)号：US20230053083A1

公开(公告)日：2023-02-16

申请号：US17882834

申请日：2022-08-08

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA ,  Takeshi ANDO ,  Takeshi KOBAYASHI

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/509 ,  C23C16/44

Abstract: A plasma processing apparatus includes: a reaction tube provided in a processing container; a boat that holds a substrate, and is carried into and out from the reaction tube in order to form a film on the substrate; a plasma generation tube that communicates with the reaction tube, and generates plasma from a gas; a gas supply that supplies the gas to the plasma generation tube; electrode installation columns provided to sandwich the plasma generation tube therebetween, and including electrodes, respectively; an RF power supply that is connected to the electrodes, and supplies a radio frequency to the electrodes; a coil provided to be spaced apart from the electrodes in the electrode installation columns; and a DC power supply that is connected to the coil, and supplies a direct current to the coil.

公开(公告)号：US20200378005A1

公开(公告)日：2020-12-03

申请号：US16883598

申请日：2020-05-26

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA ,  Kiyotaka ISHIBASHI

IPC: C23C16/50 ,  H01J37/32 ,  H01L21/673 ,  C23C16/458 ,  C23C16/34 ,  C23C16/44

Abstract: A plasma processing apparatus includes: a processing container having a cylindrical shape; a pair of plasma electrodes arranged along the longitudinal direction of the processing container while facing each other; and a radio-frequency power supply configured to supply a radio-frequency power to the pair of plasma electrodes. In the pair of plasma electrodes, an inter-electrode distance at a position distant from a power feed position to which the radio-frequency power is supplied is longer than an inter-electrode distance at the power feed position.