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    PLASMA GENERATING APPARATUS, PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING METHOD
    2.
    发明申请
    PLASMA GENERATING APPARATUS, PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING METHOD 有权

    公开(公告)号：US20220122812A1

    公开(公告)日：2022-04-21

    申请号：US17502540

    申请日：2021-10-15

    Applicant: Tokyo Electron Limited

    Inventor： Takeshi KOBAYASHI ,  Takeshi ANDO ,  Kiwamu ITO ,  Yuki TANAKA

    IPC: H01J37/32

    Abstract: A plasma generating apparatus includes: an electrode pair including a first plasma electrode and a second plasma electrode that are arranged to face each other; an RF power supply that supplies an RF power to the electrode pair; and a matching unit provided between the RF power supply and the electrode pair. The matching unit includes: a first variable capacitor and a second variable capacitor that are connected in parallel with respect to a load between the electrode pair; a coil connected in series with the first plasma electrode; and a capacitor connected in series with the second plasma electrode.

    Film Formation Apparatus
    4.
    发明申请
    Film Formation Apparatus 审中-公开

    公开(公告)号：US20190186004A1

    公开(公告)日：2019-06-20

    申请号：US16225788

    申请日：2018-12-19

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Hitoshi KATO ,  Takeshi KOBAYASHI ,  Toshiyuki NAKATSUBO

    IPC: C23C16/458 ,  C23C14/54 ,  C23C16/455 ,  H01L21/687 ,  H01L21/683

    CPC classification number: C23C16/4584 ,  C23C14/541 ,  C23C16/45544 ,  C23C16/45578 ,  H01L21/6838 ,  H01L21/68792

    Abstract: A film formation apparatus includes a rotary table provided in a processing container; a mounting table mounting a substrate and revolved by rotation of the rotary table; a film formation gas supply part configured to supply a film formation gas to a region through which the mounting table passes by the rotation of the rotary table; a spinning shaft rotatably provided on a portion rotating together with the rotary table; a driven gear provided on the spinning shaft; a driving gear configured to rotate while facing a revolution orbit of the driven gear and provided along an entire circumference of the revolution orbit so as to constitute a magnetic gear mechanism with the driven gear, and a relative-distance-changing mechanism configured to change a relative distance between the revolution orbit of the driven gear and the driving gear.

    FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSING APPARATUS AND FILM DEPOSITION METHOD
    6.
    发明申请
    FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSING APPARATUS AND FILM DEPOSITION METHOD 有权
    薄膜沉积装置，基板加工装置和薄膜沉积方法

    公开(公告)号：US20130337635A1

    公开(公告)日：2013-12-19

    申请号：US13916847

    申请日：2013-06-13

    Applicant: Tokyo Electron Limited

    Inventor： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Mitsuhiro TACHIBANA ,  Hitoshi KATO ,  Takeshi KOBAYASHI ,  Shigehiro MIURA ,  Takafumi KIMURA

    IPC: H01L21/02

    CPC classification number: H01L21/02104 ,  C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/68764 ,  H01L21/68771

    Abstract: A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.

    Abstract translation: 一种被配置为在真空室中的基板上进行成膜处理的成膜装置，包括转盘，其被配置为使基板装载区域旋转以接收基板;膜沉积区域，包括至少一个工艺气体供给部件， 气体到基板装载区域，并且被配置为通过沉积转盘的旋转中的原子层和分子层中的至少一个来形成薄膜，等离子体处理部件沿着旋转方向设置在膜沉积区域 所述转盘并且被配置为处理所述原子层和所述分子层中的至少一个以进行等离子体修饰;以及偏置电极部分，其设置在所述转盘下方，而不接触所述转台并且被配置为产生偏置电位以将等离子体中的离子吸引到 基质。

    IGNITION CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS
    7.
    发明申请
    IGNITION CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS 有权

    公开(公告)号：US20250079139A1

    公开(公告)日：2025-03-06

    申请号：US18812506

    申请日：2024-08-22

    Applicant: Tokyo Electron Limited

    Inventor： Takeshi KOBAYASHI

    IPC: H01J37/32

    Abstract: An ignition control method includes: providing a substrate processing apparatus including a pair of electrodes in a processing container, a matching box including a variable reactor and an electronic circuit, an RF power supply connected to the electrodes, and a temperature sensor that detects a temperature of the variable reactor; setting the temperature of the variable reactor to a first temperature, and measuring first information indicating a voltage between the electrodes for each adjustment position of the variable reactor when a radio-frequency voltage is applied to the electrodes; determining a preset value of the variable reactor based on the first information; acquiring the detected temperature of the variable reactor as a second temperature; and when the first and second temperatures are different, correcting the current by controlling the electronic circuit such that an adjustment position of the variable reactor becomes the determined preset value.

    PLASMA PROCESSING APPARATUS
    8.
    发明公开
    PLASMA PROCESSING APPARATUS 审中-公开

    公开(公告)号：US20240079208A1

    公开(公告)日：2024-03-07

    申请号：US18240010

    申请日：2023-08-30

    Applicant: Tokyo Electron Limited

    Inventor： Takeshi KOBAYASHI ,  Michitaka AITA

    IPC: H01J37/32

    CPC classification number: H01J37/32091 ,  H01J37/32568 ,  H01J37/32834

    Abstract: A plasma processing apparatus includes: a processing container; a substrate holding unit that disposes a plurality of substrates in multiple tiers and is inserted into the processing container; a rotary shaft that rotates the substrate holding unit; a gas supply unit that supplies a processing gas into the processing container; an exhaust unit that exhausts the inside of the processing container; a plurality of electrodes disposed on the outer side of the processing container and arranged in the circumferential direction of the processing container; and a radio-frequency power supply that applies a radio-frequency power to the plurality of electrodes, thereby generating capacitively coupled plasma in the processing container.

    PLASMA PROCESSING METHOD, PLASMA PROCESSING APPARATUS, AND CONTROL APPARATUS
    9.
    发明申请
    PLASMA PROCESSING METHOD, PLASMA PROCESSING APPARATUS, AND CONTROL APPARATUS 有权

    公开(公告)号：US20210351010A1

    公开(公告)日：2021-11-11

    申请号：US17241885

    申请日：2021-04-27

    Applicant: Tokyo Electron Limited

    Inventor： Takeshi KOBAYASHI ,  Hiroyuki KIKUCHI

    IPC: H01J37/32 ,  H01L21/02 ,  H01L21/687 ,  C23C16/458 ,  C23C16/40 ,  C23C16/455

    Abstract: A plasma processing method includes providing a plasma processing apparatus including a rotary table that is rotatably provided in a vacuum container and disposes a plurality of substrates on an upper surface along a circumferential direction, a gas supply source that supplies a plasma processing gas to at least one of a plurality of processing areas separated by a separation area in the circumferential direction of the rotary table, and an antenna that is provided to face the upper surface of the rotary table and generates plasma in the at least one processing area. The plasma processing method further includes disposing the plurality of substrates on the rotary table, and supplying the plasma processing gas into the vacuum container and supplying a pulsed wave of RF power to the antenna while rotating the rotary table.

    SUBSTRATE HOLDING MECHANISM AND SUBSTRATE PROCESSING APPARATUS
    10.
    发明申请
    SUBSTRATE HOLDING MECHANISM AND SUBSTRATE PROCESSING APPARATUS 有权

    公开(公告)号：US20210249235A1

    公开(公告)日：2021-08-12

    申请号：US17148963

    申请日：2021-01-14

    Applicant: Tokyo Electron Limited

    Inventor： Hitoshi KATO ,  Toshiyuki NAKATSUBO ,  Takeshi KOBAYASHI

    IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458

    Abstract: A substrate holding mechanism for holding a substrate placed on a stage which is rotatable with respect to a turntable, includes a substrate holding member, provided at a peripheral portion of the stage, fixed to a rotating shaft disposed below a surface on which the substrate is placed, and contactable to a side surface of the substrate placed on the stage, a biasing member having a first end fixed to the substrate holding member at a position closer to a center of the stage than the rotating shaft, and a second end fixed at a position separated from the substrate holding member toward the center of the stage and below the rotating shaft, and a pressing member configured to press upwardly a portion of the substrate holding member where the first end of the biasing member is fixed.

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