公开(公告)号：US20180076027A1

公开(公告)日：2018-03-15

申请号：US15701780

申请日：2017-09-12

Applicant: Tokyo Electron Limited

Inventor： Kandabara N. Tapily ,  Gerrit J. Leusink ,  Cory Wajda ,  Hoyoung Kang

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02304 ,  H01L21/02172 ,  H01L21/02205 ,  H01L21/31111

Abstract: Embodiments of the invention provide methods for selective film deposition using a surface pretreatment. According to one embodiment, the method includes providing a substrate containing a dielectric layer and a metal layer, exposing the substrate to a reactant gas containing a molecule that forms self-assembled monolayers (SAMs) on the substrate, and thereafter, selectively depositing a metal oxide film on a surface of the dielectric layer relative to a surface of the metal layer by exposing the substrate to a deposition gas.

公开(公告)号：US11247309B2

公开(公告)日：2022-02-15

申请号：US16357543

申请日：2019-03-19

Applicant: Tokyo Electron Limited

Inventor： Hoyoung Kang ,  Anton J. deVilliers

IPC: B25B11/00 ,  H01L21/687 ,  H01L21/683

Abstract: An apparatus and method for uniformly holding a substrate without flexure or bending of the substrate, thereby enabling accurate shape measurements of the substrate such as wafer curvature, z-height values and other surface characteristics. Techniques include using a liquid as a supporting surface for a substrate thereby providing uniform support. Liquid used has a same specific gravity of a substrate being supported so that the substrate can float on the liquid without sinking. Uniform support of the substrate enables precision metrology.

公开(公告)号：US10784100B2

公开(公告)日：2020-09-22

申请号：US15650352

申请日：2017-07-14

Applicant: Tokyo Electron Limited

Inventor： Hoyoung Kang

IPC: H01L21/02 ,  G03F7/42 ,  H01L21/027 ,  H01L21/67 ,  G03F7/09 ,  G03F7/16 ,  H01L21/306 ,  H01L21/687 ,  H01L21/66

Abstract: A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a film layer to a backside surface of the substrate. The front side surface is opposite to the backside surface of the substrate. A substrate has a bare backside surface with a first coefficient of friction. A film layer is formed onto the backside surface of the substrate. The film layer formed on the backside surface of the substrate has a second coefficient of friction. The second coefficient of friction is lower than the first coefficient of friction.

公开(公告)号：US20200152453A1

公开(公告)日：2020-05-14

申请号：US16681634

申请日：2019-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Corey LEMLEY ,  Richard Farrell ,  Hoyoung Kang

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/04

Abstract: Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer and exposing an area of interest with actinic radiation. The actinic radiation causes a de-protection reaction within the self-assembled monolayer within the central region. The method also includes removing the self-assembled monolayer from the area of interest while the self-assembled monolayer remains on remaining surfaces of the substrate.

公开(公告)号：US20190283218A1

公开(公告)日：2019-09-19

申请号：US16357543

申请日：2019-03-19

Applicant: Tokyo Electron Limited

Inventor： Hoyoung Kang ,  Anton J. deVilliers

IPC: B25B11/00 ,  H01L21/687 ,  H01L21/683

Abstract: An apparatus and method for uniformly holding a substrate without flexure or bending of the substrate, thereby enabling accurate shape measurements of the substrate such as wafer curvature, z-height values and other surface characteristics. Techniques include using a liquid as a supporting surface for a substrate thereby providing uniform support. Liquid used has a same specific gravity of a substrate being supported so that the substrate can float on the liquid without sinking. Uniform support of the substrate enables precision metrology.

公开(公告)号：US20190103268A1

公开(公告)日：2019-04-04

申请号：US16142537

申请日：2018-09-26

Applicant: Tokyo Electron Limited

Inventor： Hoyoung Kang

IPC: H01L21/02 ,  H01L21/306

Abstract: Methods and systems for coating a substrate with a fluid are described. In an embodiment, a method may include receiving a substrate in a substrate processing unit, the substrate having one or more physical features formed on a surface of the substrate. The method may include introducing a gas into an environment of the surface of the substrate. Additionally, the method may include applying a fluid to the surface of the substrate, wherein the gas facilitates distribution of the fluid relative to the one or more physical features formed on the surface of the substrate. The method may further include controlling one or more processing parameters related to distribution of the fluid in order to achieve device formation objectives.

公开(公告)号：US20170221902A1

公开(公告)日：2017-08-03

申请号：US15416916

申请日：2017-01-26

Applicant: Tokyo Electron Limited

Inventor： Hoyoung Kang

IPC: H01L27/108 ,  H01L21/027 ,  H01L21/8234 ,  H01L21/308

CPC classification number: H01L27/10879 ,  H01L21/0274 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/823431

Abstract: Techniques disclosed herein, provide a method and fabrication structure for accurately increasing feature density for creating high-resolution features and also for cutting on pitch of sub-resolution features. Techniques include using multiple materials having different etch characteristics to selectively etch features and create cuts or blocks where specified. A multiline layer is formed of three or more different materials that provide differing etch characteristics. Etch masks, including interwoven etch masks, are used to selectively etch cuts within selected, exposed materials. Structures can then be cut and formed. Forming structures and cuts can be recorded in a memorization layer, which can also be used as an etch mask.

公开(公告)号：US20160141290A1

公开(公告)日：2016-05-19

申请号：US14720279

申请日：2015-05-22

Applicant: Tokyo Electron Limited

Inventor： Hoyoung Kang

IPC: H01L27/108 ,  H01L21/768 ,  H01L21/31 ,  H01L23/528 ,  H01L23/532 ,  H01L49/02 ,  H01L23/522 ,  H01L21/311 ,  H01L21/283

CPC classification number: H01L21/31116 ,  H01L21/31 ,  H01L21/31138 ,  H01L21/31144 ,  H01L27/10852 ,  H01L28/92 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A capacitor structure and method of forming thereof on a substrate is described. The capacitor structure includes a substrate having a plurality of capacitor electrodes formed within an insulative retaining material, and a collar layer structure in contact with the plurality of capacitor electrodes, wherein the collar layer structure interconnects the plurality of capacitor electrodes and exposes the underlying insulative retaining material through openings having an unguided, random self-assembly pattern. Furthermore, the insulative retaining material may be removed from the capacitor structure. The method includes using a self-assembly process to form the interconnecting collar layer structure.

Abstract translation: 描述了一种电容器结构及其在衬底上的形成方法。 电容器结构包括具有形成在绝缘保持材料内的多个电容器电极的基板和与所述多个电容器电极接触的轴环层结构，其中所述轴环层结构将所述多个电容器电极互连并且暴露所述下面的绝缘保持 材料通过开口具有非导向的随机自组装图案。 此外，绝缘保持材料可以从电容器结构移除。 该方法包括使用自组装工艺来形成互连套环层结构。

公开(公告)号：US11908728B2

公开(公告)日：2024-02-20

申请号：US16047711

申请日：2018-07-27

Applicant: Tokyo Electron Limited

Inventor： Ronald Nasman ,  Gerrit J. Leusink ,  Rodney L. Robison ,  Hoyoung Kang ,  Daniel Fulford

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  C23C16/44 ,  H01J37/32 ,  H01L21/67 ,  C23C16/505

CPC classification number: H01L21/68735 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/4585 ,  H01J37/32449 ,  C23C16/505 ,  H01L21/67069

Abstract: Techniques herein include a process chamber for depositing thin films to backside surfaces of wafers to reduce wafer bowing and distortion. A substrate support provides an annular perimeter seal around the bottom and/or side of the wafer which allows the majority of the substrate backside to be exposed to a process environment. A supported wafer separates the chamber into lower and upper chambers that provide different process environments. The lower section of the processing chamber includes deposition hardware configured to apply and remove thin films. The upper section can remain a chemically inert environment, protecting the existing features on the top surface of the wafer. Multiple exhausts and differential pressures are used to prevent deposition gasses from accessing the working surface of a wafer.

公开(公告)号：US11043378B2

公开(公告)日：2021-06-22

申请号：US16681634

申请日：2019-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Corey Lemley ,  Richard Farrell ,  Hoyoung Kang

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/04

Abstract: Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer and exposing an area of interest with actinic radiation. The actinic radiation causes a de-protection reaction within the self-assembled monolayer within the central region. The method also includes removing the self-assembled monolayer from the area of interest while the self-assembled monolayer remains on remaining surfaces of the substrate.