公开(公告)号：US20190295849A1

公开(公告)日：2019-09-26

申请号：US16438416

申请日：2019-06-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： I-Fan Chang ,  Yen-Liang Wu ,  Wen-Tsung Chang ,  Jui-Ming Yang ,  Jie-Ning Yang ,  Chi-Ju Lee ,  Chun-Ting Chiang ,  Bo-Yu Su ,  Chih-Wei Lin ,  Dien-Yang Lu

IPC: H01L21/28 ,  H01L29/66 ,  H01L29/423

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate dielectric layer on a substrate; forming a gate material layer on the gate dielectric layer, and removing part of the gate material layer and part of the gate dielectric layer to form a gate electrode, in which a top surface of the gate dielectric layer adjacent to two sides of the gate electrode is lower than a top surface of the gate dielectric layer between the gate electrode and the substrate. Next, a first mask layer is formed on the gate dielectric layer and the gate electrode, part of the first mask layer and part of the gate dielectric layer are removed to form a first spacer, a second mask layer is formed on the substrate and the gate electrode, and part of the second mask layer is removed to forma second spacer.

公开(公告)号：US10002966B1

公开(公告)日：2018-06-19

申请号：US15655919

申请日：2017-07-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： I-Fan Chang ,  Chi-Ju Lee ,  Yen-Liang Wu ,  Wen-Tsung Chang ,  Jui-Ming Yang ,  Dien-Yang Lu

IPC: H01L29/78 ,  H01L29/06

CPC classification number: H01L29/7854 ,  H01L29/0653

Abstract: A field-effect transistor includes a substrate having thereon an isolation region. A fin structure protrudes from a top surface of the isolation region. The fin structure extends along a first direction. A gate electrode strides across the fin structure and extends along a second direction. A fin corner layer wraps a lower portion of the gate electrode around the fin structure. A spacer covers a sidewall of the gate electrode and the fin corner layer.