公开(公告)号：US20170133470A1

公开(公告)日：2017-05-11

申请号：US15286541

申请日：2016-10-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Chun-Liang Kuo ,  Tsang-Hsuan Wang ,  Sheng-Hsu Liu ,  Chieh-Lung Wu ,  Chung-Min Tsai ,  Yi-Wei Chen

IPC: H01L29/24 ,  H01L29/66 ,  H01L29/165 ,  H01L29/78

CPC classification number: H01L29/24 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/7848

Abstract: A semiconductor device is disclosed. The semiconductor device includes: a substrate, a gate structure on the substrate, a spacer adjacent to the gate structure, an epitaxial layer in the substrate adjacent to two sides of the spacer, and a dislocation embedded within the epitaxial layer. Preferably, the top surface of the epitaxial layer is lower than the top surface of the substrate, and the top surface of the epitaxial layer has a V-shape.

公开(公告)号：US20150255576A1

公开(公告)日：2015-09-10

申请号：US14201373

申请日：2014-03-07

Applicant: United Microelectronics Corp.

Inventor： Chin-I Liao ,  Sheng-Hsu Liu

IPC: H01L29/66 ,  H01L29/24 ,  H01L29/16 ,  H01L29/161 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A method for fabricating a semiconductor device is described. A spacer is formed on a sidewall of a fin structure. A portion of the fin structure is removed to form a cavity exposing at least a portion of the inner sidewall of the spacer. An epitaxy process is performed based on the remaining fin structure to form a semiconductor layer that has a shovel-shaped cross section including: a stem portion in the cavity, and a shovel plane portion contiguous with the stem portion. A semiconductor device is also described, which includes the spacer, the remaining fin structure and the semiconductor layer that are mentioned above.

Abstract translation: 对半导体装置的制造方法进行说明。 间隔件形成在翅片结构的侧壁上。 翼片结构的一部分被去除以形成暴露间隔物的内侧壁的至少一部分的空腔。 基于剩余的翅片结构进行外延工艺以形成具有铲形截面的半导体层，该半导体层包括：腔体中的杆部分和与杆部分相邻的铲平面部分。 还描述了一种半导体器件，其包括上述的间隔物，剩余的鳍结构和半导体层。