公开(公告)号：WO2008151328A3

公开(公告)日：2009-04-09

申请号：PCT/US2008066375

申请日：2008-06-09

Applicant: UNIV CORNELL ,  LAL AMIT ,  RAMKUMAR ABHISHEK ,  PADUCH DARIUS ,  SCHLEGEL PETER

Inventor： LAL AMIT ,  RAMKUMAR ABHISHEK ,  PADUCH DARIUS ,  SCHLEGEL PETER

IPC: A61B5/05 ,  A61B5/00

CPC classification number: A61B5/0053 ,  A61B5/685 ,  A61B8/0833 ,  A61B2562/0261

Abstract: Microprobes for common mode noise reduction are described.

Abstract translation: 描述了用于共模噪声降低的微波。

公开(公告)号：WO2012075272A3

公开(公告)日：2012-08-16

申请号：PCT/US2011062871

申请日：2011-12-01

Applicant: UNIV CORNELL ,  LAL AMIT ,  AMPONSAH KWAME

Inventor： LAL AMIT ,  AMPONSAH KWAME

IPC: H01L25/16 ,  B81B7/02

CPC classification number: H01L25/16 ,  B81C1/00246 ,  B81C2203/075 ,  H01L29/42316 ,  H01L29/66893 ,  H01L29/66901 ,  H01L29/735 ,  H01L29/8086 ,  H01L29/8126 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A device including a NEMS/MEMS machine(s) and associated electrical circuitry. The circuitry includes at least one transistor, preferably JFET, that is used to: (i) actuate the NEMS/MEMS machine; and/or (ii) receive feedback from the operation of the NEMS/MEMS machine The transistor (e.g., the JFET) and the NEMS/MEMS machine are monolithically integrated for enhanced signal transduction and signal processing. Monolithic integration is preferred to hybrid integration (e.g., integration using wire bonds, flip chip contact bonds or the like) due to reduce parasitics and mismatches. In one embodiment, the JFET is integrated directly into a MEMS machine, that is in the form of a SOI MEMS cantilever, to form an extra-tight integration between sensing and electronic integration. When a cantilever connected to the JFET is electrostatically actuated; its motion directly affects the current in the JFET through monolithically integrated conduction paths (e.g., traces, vias, etc.) In one embodiment, devices according to the present invention were realized in 2?m thick SOI cross-wire beams, with a MoSi2 contact metallization for stress minimization and ohmic contact. In this embodiment, the pull-in voltage for the MEMS cantilever was 21V and the pinch-off voltage of the JFET was -19V.

Abstract translation: 包括NEMS / MEMS机器和相关联的电路的装置。 该电路包括至少一个晶体管，优选JFET，其用于：（i）致动NEMS / MEMS机器; 和/或（ii）从NEMS / MEMS机器的操作接收反馈晶体管（例如，JFET）和NEMS / MEMS机器是单片集成的，用于增强的信号传导和信号处理。 由于减少寄生和失配，整体集成优于混合集成（例如，使用引线键合，倒装芯片接触键等的集成）。 在一个实施例中，JFET直接集成在MEMS机器中，其是以SOI MEMS悬臂的形式，以形成感测和电子集成之间的非常紧密的集成。 当连接到JFET的悬臂被静电驱动时; 其运动通过单片集成导电路径（例如，迹线，通孔等）直接影响JFET中的电流。在一个实施例中，根据本发明的器件在2μm厚的SOI交叉线束中实现，其中MoSi 2 接触金属化用于应力最小化和欧姆接触。 在本实施例中，MEMS悬臂的拉入电压为21V，JFET的截止电压为-19V。

公开(公告)号：WO2010065702A3

公开(公告)日：2010-08-26

申请号：PCT/US2009066517

申请日：2009-12-03

Applicant: UNIV CORNELL ,  LAL AMIT ,  SHI YUE

Inventor： LAL AMIT ,  SHI YUE

IPC: H05H13/04

CPC classification number: G21B1/15 ,  H05H15/00 ,  Y02E30/16

Abstract: A charged particle accelerator having a curvilinear beam trajectory maintained solely by a laterally directed, constant electric field; requiring no magnetic field. A method for controlling the trajectory of a charged particle in an accelerator by applying only a constant electric field for beam trajectory control. Curvilinear steering electrodes held at a constant potential create the beam path. A method for making a chip-scale charged particle accelerator involves integrated circuit-based processes and materials. A particle accelerator that can generate 110 KeV may a footprint less than about 1 cm2.

Abstract translation: 具有仅由横向定向的恒定电场维持的曲线射束轨迹的带电粒子加速器; 不需要磁场。 一种用于控制加速器中的带电粒子的轨迹的方法，其通过仅施加用于射束轨迹控制的恒定电场。 曲线导向电极保持恒定的电位形成光束路径。 制造芯片级带电粒子加速器的方法涉及基于集成电路的工艺和材料。 可以产生110KeV的粒子加速器可能占地面积小于约1cm 2。