公开(公告)号：EP4018158A1

公开(公告)日：2022-06-29

申请号：EP20854841.2

申请日：2020-08-21

Applicant: Geegah LLC ,  Lal, Amit ,  Kuo, Justin

Inventor： LAL, Amit ,  KUO, Justin

IPC: G01B17/00 ,  H03L7/26 ,  H03B5/00 ,  H04B17/00

公开(公告)号：EP3977756A1

公开(公告)日：2022-04-06

申请号：EP20815543.2

申请日：2020-06-01

Applicant: Geegah LLC ,  Lal, Amit ,  Kuo, Justin

Inventor： LAL, Amit ,  KUO, Justin

IPC: H04R17/00 ,  B06B1/06 ,  H01L41/04 ,  H04B11/00

公开(公告)号：WO2012151360A2

公开(公告)日：2012-11-08

申请号：PCT/US2012/036251

申请日：2012-05-03

Applicant: CORNELL UNIVERSITY ,  LAL, Amit ,  PIRATLA, Sarvani

Inventor： LAL, Amit ,  PIRATLA, Sarvani

IPC: G01P15/18 ,  G01P15/02

CPC classification number: G01P21/00

Abstract: An inertial sensor calibration method and inertial sensor calibration apparatus. One or more diffraction patterns are generated by one or more fixed and/or moveable gratings (inertial sensors) illuminated by an atomically stabilized source attached to a base and detected by an imager. The grating and/or inertial sensor has a designed parameter value and an actual respective parameter value, such as motion or distance that can be determined upon ultra-precise measurement. Such ultra-precise measurement can be used to calibrate the grating or inertial sensor.

Abstract translation: 惯性传感器校准方法和惯性传感器校准装置。 一个或多个衍射图案由一个或多个固定和/或可移动的光栅（惯性传感器）产生，该光栅由附接到基座的原子稳定的光源照射并由成像器检测。 光栅和/或惯性传感器具有设计参数值和实际相应的参数值，例如可以在超精密测量时确定的运动或距离。 这种超精密测量可用于校准光栅或惯性传感器。

公开(公告)号：WO2011063228A3

公开(公告)日：2011-10-20

申请号：PCT/US2010057422

申请日：2010-11-19

Applicant: UNIV CORNELL ,  LAL AMIT ,  TIN STEVEN

Inventor： LAL AMIT ,  TIN STEVEN

IPC: G21H1/00

CPC classification number: G21H1/06

Abstract: An exemplary thinned-down betavoltaic device includes an N+ doped silicon carbide (SiC) substrate having a thickness between about 3 to 50 microns, an electrically conductive layer disposed immediately adjacent the bottom surface of the SiC substrate; an N- doped SiC epitaxial layer disposed immediately adjacent the top surface of the SiC substrate, a P+ doped SiC epitaxial layer disposed immediately adjacent the top surface of the N- doped SiC epitaxial layer, an ohmic conductive layer disposed immediately adjacent the top surface of the P+ doped SiC epitaxial layer, and a radioisotope layer disposed immediately adjacent the top surface of the ohmic conductive layer. The radioisotope layer can be 63Ni, 147Pm, or 3H. Devices can be stacked in parallel or series. Methods of making the devices are disclosed.

Abstract translation: 一种示例性的减薄型紫外线器件包括厚度在约3至50微米之间的N +掺杂碳化硅（SiC）衬底，紧邻SiC衬底的底表面设置的导电层; 紧邻SiC衬底的顶表面设置的N掺杂的SiC外延层，紧邻N掺杂的SiC外延层的顶表面设置的P +掺杂的SiC外延层，紧邻邻近顶部表面的欧姆导电层 P +掺杂的SiC外延层，以及紧邻欧姆导体层的顶表面设置的放射性同位素层。 放射性同位素层可以是63Ni，147Pm或3H。 设备可以并联或串联堆叠。 公开了制造装置的方法。

公开(公告)号：WO2010065702A2

公开(公告)日：2010-06-10

申请号：PCT/US2009/066517

申请日：2009-12-03

Applicant: CORNELL UNIVERSITY ,  LAL, Amit ,  SHI, Yue

Inventor： LAL, Amit ,  SHI, Yue

IPC: H05H13/04

CPC classification number: G21B1/15 ,  H05H15/00 ,  Y02E30/16

Abstract: A charged particle accelerator having a curvilinear beam trajectory maintained solely by a laterally directed, constant electric field; requiring no magnetic field. A method for controlling the trajectory of a charged particle in an accelerator by applying only a constant electric field for beam trajectory control. Curvilinear steering electrodes held at a constant potential create the beam path. A method for making a chip-scale charged particle accelerator involves integrated circuit-based processes and materials. A particle accelerator that can generate 110 KeV may a footprint less than about 1 cm 2 .

Abstract translation: 具有仅由横向恒定电场维持的曲线光束轨迹的带电粒子加速器; 不需要磁场。 一种通过仅施加用于光束轨迹控制的恒定电场来控制加速器中的带电粒子的轨迹的方法。 保持恒定电位的曲线转向电极产生光束路径。 制造芯片级带电粒子加速器的方法涉及基于集成电路的工艺和材料。 可以产生110keV的粒子加速器可以具有小于约1cm 2的足迹。

公开(公告)号：WO2010030698A1

公开(公告)日：2010-03-18

申请号：PCT/US2009/056400

申请日：2009-09-09

Applicant: CORNELL UNIVERSITY ,  LAL, Amit ,  YOSHIMIZU, Norimasa

Inventor： LAL, Amit ,  YOSHIMIZU, Norimasa

IPC: B23Q17/09

CPC classification number: G01B11/25 ,  G01B11/2518 ,  G01Q40/02 ,  G01Q80/00 ,  G03F7/70383 ,  G03F7/7085

Abstract: A wafer-scale nano-metrology system (10) for sensing position of a nanofabrication element (16) when illuminated by a patterned optical projection defining a grid or position measuring gauge includes a frequency stabilized laser emitter (12) configured to generate a laser emission at a selected frequency, where the laser emission forms a diverging beam configured to illuminate a selected area occupied by a target fabrication object (18) having a proximal surface. An optical pattern generator (14) is illuminated by laser (12) and generates a patterned optical projection grid or gauge for projection upon the target fabrication object (18). A movable tool or nanofabrication element (16) carries an optical sensor array (50), and the sensor array detect at least a portion of the optical projection grid, and, in response to that detection, generates grid position data for use in controlling the position of the tool (16).

Abstract translation: 用于感测纳米加工元件（16）的位置的晶片级纳米测量系统（10）当被限定网格或位置测量计的图案化光学投影仪照射时，包括频率稳定的激光发射器（12），其被配置为产生激光发射 在选定的频率处，其中激光发射形成发散光束，其被配置为照射由具有近端表面的目标制造物体（18）占据的选定区域。 光学图案发生器（14）被激光（12）照射，并且产生用于在目标制造对象（18）上投影的图案化的光学投影栅格或量规。 可移动工具或纳米制造元件（16）承载光学传感器阵列（50），并且传感器阵列检测光学投影栅格的至少一部分，并且响应于该检测，生成栅格位置数据以用于控制 工具（16）的位置。

公开(公告)号：WO2009126263A1

公开(公告)日：2009-10-15

申请号：PCT/US2009/002181

申请日：2009-04-08

Applicant: CORNELL UNIVERSITY ,  LAL, Amit ,  ARDANUC, Serhan, M.

Inventor： LAL, Amit ,  ARDANUC, Serhan, M.

IPC: H02N6/00

CPC classification number: G02B7/1821 ,  B81B3/0054 ,  B81B2201/042 ,  B81B2203/058 ,  F24S23/80 ,  F24S30/452 ,  F24S2023/85 ,  G02B7/182 ,  G02B26/0841 ,  H01L31/0543 ,  H01L31/0547 ,  Y02E10/47 ,  Y02E10/52

Abstract: A system (120) for reflecting or redirecting incident light, microwave or sound energy includes a first substrate (144) configured to support an array of reflective elements (130) that can be angularly displaced through a range of substantially (90) degrees in response to a reflector angle control signal and a controller programmed to generate the reflector angle control signal to achieve desired incident energy, beam or wavefront re-direction. The reflective elements (130) preferably comprise MEMS micro-reflector elements hingedly or movably attached to the first substrate (130) and define a reflective surface that is aimed at the source of incident light, microwave or sound energy.

Abstract translation: 用于反射或重定向入射光，微波或声能的系统（120）包括被配置为支撑反射元件阵列（130）的第一衬底（144），所述反射元件阵列可以在基本上（90）度的范围内成角度地移位 反射器角度控制信号和控制器被编程以产生反射器角度控制信号以实现期望的入射能量，波束或波前重新定向。 反射元件（130）优选地包括铰链地或可移动地附接到第一基板（130）并且限定针对入射光源，微波或声能源的反射表面的MEMS微反射器元件。

公开(公告)号：WO2012151360A3

公开(公告)日：2013-01-10

申请号：PCT/US2012036251

申请日：2012-05-03

Applicant: UNIV CORNELL ,  LAL AMIT ,  PIRATLA SARVANI

Inventor： LAL AMIT ,  PIRATLA SARVANI

IPC: G01P15/18 ,  G01P15/02

CPC classification number: G01P21/00

Abstract: An inertial sensor calibration method and inertial sensor calibration apparatus. One or more diffraction patterns are generated by one or more fixed and/or moveable gratings (inertial sensors) illuminated by an atomically stabilized source attached to a base and detected by an imager. The grating and/or inertial sensor has a designed parameter value and an actual respective parameter value, such as motion or distance that can be determined upon ultra-precise measurement. Such ultra-precise measurement can be used to calibrate the grating or inertial sensor.

Abstract translation: 惯性传感器校准方法和惯性传感器校准装置。 一个或多个衍射图案由一个或多个固定和/或可移动的光栅（惯性传感器）产生，该光栅由附接到基座的原子稳定的光源照射并由成像器检测。 光栅和/或惯性传感器具有设计参数值和实际相应的参数值，例如可以在超精密测量时确定的运动或距离。 这种超精密测量可用于校准光栅或惯性传感器。

公开(公告)号：WO2010054368A3

公开(公告)日：2010-05-14

申请号：PCT/US2009/063855

申请日：2009-11-10

Applicant: CORNELL UNIVERSITY ,  LAL, Amit ,  TIN, Steven

Inventor： LAL, Amit ,  TIN, Steven

IPC: H02N2/00 ,  H02J7/00

Abstract: An autonomous, self -powered device includes a radioisotope-powered current impulse generator including a spring assembly comprising a cantilever, and a piezoelectric- surface acoustic wave (P-SAW) structure connected in parallel to the current impulse generator. Positive charges are accumulated on an electrically isolated 63 Ni thin film due to the continuous emission of β-particles (electrons), which are collected on the cantilever. The accumulated charge eventually pulls the cantilever into the radioisotope thin-film until electrical discharge occurs. The electrical discharge generates a transient magnetic and electrical field that can excite the RF modes of a cavity in which the electrical discharge occurs. A piezoelectric-SAW resonator is connected to the discharge assembly to control the RF frequency output. A method for generating a tuned RF signal includes inputting an energy pulse to a P-SAWresonator, exciting the resonant frequency thereof, and outputting an RF signal having a frequency tuned to the resonator frequency.

公开(公告)号：WO2022139821A1

公开(公告)日：2022-06-30

申请号：PCT/US2020/066648

申请日：2020-12-22

Applicant: LAL, Amit ,  KUO, Justin ,  BUKREYEV, Ivan

Inventor： LAL, Amit ,  KUO, Justin ,  BUKREYEV, Ivan

IPC: B06B1/06 ,  B06B3/00

Abstract: An GHz ultrasonic transducer pixel, alone or incorporated into imaging system with a CMOS device. The ultrasonic transducer pixel includes an ultrasonic transducer connected to a transmit circuit and a receive circuit. The transmit and receive circuits are chosen by switches. The ultrasonic transducer pixel also includes a mixer of the receive circuit positioned as a first stage in the receive circuit, a pixel select circuit comprising analog components and digital components, and a power supply conditioning circuitry.