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    FIN STRUCTURE CUTTING PROCESS
    12.
    发明申请
    FIN STRUCTURE CUTTING PROCESS 有权
    FIN结构切割工艺

    公开(公告)号：US20170047244A1

    公开(公告)日：2017-02-16

    申请号：US15336811

    申请日：2016-10-28

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Tong-Jyun Huang ,  Rai-Min Huang ,  I-Ming Tseng ,  Kuan-Hsien Li ,  Chen-Ming Huang

    IPC: H01L21/762 ,  H01L21/308 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/3065 ,  H01L21/02

    CPC classification number: H01L21/76224 ,  H01L21/02271 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653

    Abstract: A fin structure cutting process includes the following steps. Four fin structures are formed in a substrate, where the four fin structures including a first fin structure, a second fin structure, a third fin structure and a fourth fin structure are arranged sequentially and parallel to each other. A first fin structure cutting process is performed to remove top parts of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure. A second fin structure cutting process is performed to remove the second bump and the fourth fin structure completely, but to preserve the first bump beside the first fin structure. Moreover, the present invention provides a fin structure formed by said process.

    Abstract translation: 翅片结构切割过程包括以下步骤。 在基板中形成有四个翅片结构，其中包括第一翅片结构，第二翅片结构，第三翅片结构和第四翅片结构的四个翅片结构彼此顺序并联。 执行第一鳍结构切割处理以去除第二鳍结构和第三鳍结构的顶部部分，从而由第二鳍结构形成第一凸起，以及由第三鳍结构形成的第二凸起。 执行第二鳍结构切割处理以完全去除第二凸起和第四鳍结构，但是将第一凸起保持在第一鳍结构旁边。 此外，本发明提供了一种通过所述方法形成的翅片结构。

    Fin structure and fin structure cutting process
    13.
    发明授权
    Fin structure and fin structure cutting process 有权
    翅片结构和翅片结构切割过程

    公开(公告)号：US09524909B2

    公开(公告)日：2016-12-20

    申请号：US14696494

    申请日：2015-04-27

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Tong-Jyun Huang ,  Rai-Min Huang ,  I-Ming Tseng ,  Kuan-Hsien Li ,  Chen-Ming Huang

    IPC: H01L29/06 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/02 ,  H01L27/088

    CPC classification number: H01L21/76224 ,  H01L21/02271 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653

    Abstract: A fin structure cutting process includes the following steps. Four fin structures are formed in a substrate, where the four fin structures including a first fin structure, a second fin structure, a third fin structure and a fourth fin structure are arranged sequentially and parallel to each other. A first fin structure cutting process is performed to remove top parts of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure. A second fin structure cutting process is performed to remove the second bump and the fourth fin structure completely, but to preserve the first bump beside the first fin structure. Moreover, the present invention provides a fin structure formed by said process.

    Abstract translation: 翅片结构切割过程包括以下步骤。 在基板中形成有四个翅片结构，其中包括第一翅片结构，第二翅片结构，第三翅片结构和第四翅片结构的四个翅片结构彼此顺序并联。 执行第一鳍结构切割处理以去除第二鳍结构和第三鳍结构的顶部部分，从而由第二鳍结构形成第一凸起，以及由第三鳍结构形成的第二凸起。 执行第二鳍结构切割处理以完全去除第二凸起和第四鳍结构，但是将第一凸起保持在第一鳍结构旁边。 此外，本发明提供了一种通过所述方法形成的翅片结构。

    Method of forming semiconductor device
    14.
    发明授权
    Method of forming semiconductor device 有权
    半导体器件形成方法

    公开(公告)号：US09443952B2

    公开(公告)日：2016-09-13

    申请号：US14506009

    申请日：2014-10-03

    Applicant: United Microelectronics Corp.

    Inventor： Chun-Tsen Lu ,  Chih-Jung Su ,  Jian-Wei Chen ,  Shui-Yen Lu ,  Yi-Wen Chen ,  Po-Cheng Huang ,  Chen-Ming Huang ,  Shih-Fang Tzou

    IPC: H01L21/3205 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51

    CPC classification number: H01L29/66545 ,  H01L21/0206 ,  H01L21/02065 ,  H01L21/02271 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/823431 ,  H01L21/823821 ,  H01L29/4966 ,  H01L29/517

    Abstract: A method of forming a semiconductor device is disclosed. A substrate having multiple fins is provided. An insulating layer fills a lower portion of a gap between two adjacent fins. At least one first stacked structure is formed on one fin and at least one second stacked structure is formed on one insulation layer. A first dielectric layer is formed to cover the first and second stacked structures. A portion of the first dielectric layer and portions of the first and second stacked structures are removed. Another portion of the first dielectric layer is removed until a top of the remaining first dielectric layer is lower than tops of the first and second stacked structures. A second dielectric layer is formed to cover the first and second stacked structures. A portion of the second dielectric layer is removed until the tops of the first and second stacked structures are exposed.

    Abstract translation: 公开了一种形成半导体器件的方法。 提供具有多个翅片的基板。 绝缘层填充两个相邻翅片之间的间隙的下部。 在一个翅片上形成至少一个第一堆叠结构，并且在一个绝缘层上形成至少一个第二堆叠结构。 形成第一电介质层以覆盖第一和第二堆叠结构。 去除第一电介质层的一部分和第一和第二堆叠结构的部分。 去除第一电介质层的另一部分，直到剩余的第一电介质层的顶部低于第一和第二堆叠结构的顶部。 形成第二电介质层以覆盖第一和第二堆叠结构。 去除第二电介质层的一部分直到第一和第二堆叠结构的顶部露出。

    Method for fabricating semiconductor device
    17.
    发明授权
    Method for fabricating semiconductor device 有权

    公开(公告)号：US10312146B2

    公开(公告)日：2019-06-04

    申请号：US15647031

    申请日：2017-07-11

    Applicant: United Microelectronics Corp.

    Inventor： Ching-Ling Lin ,  Wen-An Liang ,  Chen-Ming Huang

    IPC: H01L21/8234 ,  H01L21/033 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/324 ,  H01L21/02 ,  H01L27/088 ,  H01L29/417

    Abstract: A method for fabricating a semiconductor structure includes forming a plurality of mandrels over a substrate, wherein the substrate comprises a semiconductor substrate as a base. Then, a first dielectric layer is formed to cover on a predetermined mandrel of the mandrels. A second dielectric layer is formed over the substrate to cover the mandrels. The mandrels are removed, wherein a remaining portion of the first dielectric layer and the second dielectric layer at a sidewall of the mandrels remains on the substrate. An anisotropic etching process is performed over the substrate until a top portion of the semiconductor substrate is etched to form a plurality of fins corresponding to the remaining portion of the first dielectric layer and the second dielectric layer.

    Method for forming fin structures for non-planar semiconductor device
    18.
    发明授权
    Method for forming fin structures for non-planar semiconductor device 有权

    公开(公告)号：US09786502B2

    公开(公告)日：2017-10-10

    申请号：US15067157

    申请日：2016-03-10

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Kuan-Hsien Li ,  Rai-Min Huang ,  I-Ming Tseng ,  Wen-An Liang ,  Chen-Ming Huang

    IPC: H01L21/033 ,  H01L21/8234

    CPC classification number: H01L21/0337 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/6681

    Abstract: A method for forming fin structure includes following steps. A substrate is provided. A first mandrel and a plurality of second mandrels are formed on the substrate simultaneously. A plurality of spacers are respectively formed on sidewalls of the first mandrel and the second mandrels and followed by removing the first mandrel and the second mandrels to form a first spacer pattern and a plurality of second spacer patterns. Then the substrate is etched to simultaneously form at least a first fin and a plurality of second fins on the substrate with the first spacer pattern and the second spacer patterns serving as an etching mask. At least one of the second fins is immediately next to the first fin, and a fin width of the first fin is larger than a fin width of the second fins. Then, the second fins are removed from the substrate.

    METHOD FOR FORMING FIN STRUCTURES FOR NON-PLANAR SEMICONDUCTOR DEVICE
    19.
    发明申请
    METHOD FOR FORMING FIN STRUCTURES FOR NON-PLANAR SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20170263454A1

    公开(公告)日：2017-09-14

    申请号：US15067157

    申请日：2016-03-10

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Kuan-Hsien Li ,  Rai-Min Huang ,  I-Ming Tseng ,  Wen-An Liang ,  Chen-Ming Huang

    IPC: H01L21/033 ,  H01L21/8234

    CPC classification number: H01L21/0337 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/6681

    Abstract: A method for forming fin structure includes following steps. A substrate is provided. A first mandrel and a plurality of second mandrels are formed on the substrate simultaneously. A plurality of spacers are respectively formed on sidewalls of the first mandrel and the second mandrels and followed by removing the first mandrel and the second mandrels to form a first spacer pattern and a plurality of second spacer patterns. Then the substrate is etched to simultaneously form at least a first fin and a plurality of second fins on the substrate with the first spacer pattern and the second spacer patterns serving as an etching mask. At least one of the second fins is immediately next to the first fin, and a fin width of the first fin is larger than a fin width of the second fins. Then, the second fins are removed from the substrate.

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