公开(公告)号：EP2714582A1

公开(公告)日：2014-04-09

申请号：EP12723196.7

申请日：2012-05-24

Applicant: ELMOS Semiconductor AG

Inventor： KLEINSCHMIDT, Frank ,  TEN HAVE, Arnd

IPC: B81C1/00 ,  G01L9/00 ,  H01L21/764

CPC classification number: B81C1/00158 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2201/0192 ,  G01L9/0045

Abstract: The invention relates to a method for producing a semiconductor structure comprising a buried cavity (64), wherein a first semiconductor substrate (10) having an upper face (22) is provided and a depression is formed in the upper face (22) of the first semiconductor substrate (10). In addition, a second semiconductor substrate (26) having crystal lattice planes and an upper face (28) is provided, said upper face extending substantially parallel to the crystal lattice planes, and one of the crystal lattice planes, which is located at a desired distance from the upper face (28) of the second semiconductor substrate (26), is weakened by means of ion implantation such as to generate a predetermined breaking plane. The upper face (28) of the second semiconductor substrate (26) is bonded to the upper face (22) of the first semiconductor substrate (10) under vacuum conditions, wherein the second semiconductor substrate (26) covers the depression (20) in the upper face (22) of the first semiconductor substrate (10) in order to form a buried cavity (60). The second semiconductor substrate (26) is split along the predetermined breaking plane, which leaves a membrane layer (34) of the upper face (22) of the first semiconductor substrate (10).

公开(公告)号：EP2714582B1

公开(公告)日：2015-09-30

申请号：EP12723196.7

申请日：2012-05-24

Applicant: ELMOS Semiconductor AG

Inventor： KLEINSCHMIDT, Frank ,  TEN HAVE, Arnd

IPC: B81C1/00 ,  G01L9/00 ,  H01L21/764

CPC classification number: B81C1/00158 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2201/0192 ,  G01L9/0045

公开(公告)号：EP1299905B1

公开(公告)日：2008-04-16

申请号：EP01954078.0

申请日：2001-07-11

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： ASPAR, Bernard ,  LAGACHE, Chrystelle

IPC: H01L21/762 ,  H01L21/20

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: The invention concerns a method for cutting a block of material (10) comprising the following steps: a) forming in the block a buried zone (12), embrittled by at least an ion-inserting step, the buried zone delimiting at least a surface part (14) of the block; b) forming at the embrittled zone at least an incipient cleavage (30, 36) using first separating means selected among inserting a tool, injecting a fluid, a heat treatment and/or ion implantation of an ionic species different from that inserted during the preceding step; and c) separating at the embrittled zone of the surface part (14) of the block a remaining part (16), called mass part, from the incipient cleavage (30, 36) using second means, different from the first separation means and selected among heat treatment and/or applying mechanical forces exerted between the surface part and the embrittled zone. The invention is useful for making micro-electronic, optoelectronic or micro-mechanical components,

公开(公告)号：EP1299905A1

公开(公告)日：2003-04-09

申请号：EP01954078.0

申请日：2001-07-11

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： ASPAR, Bernard ,  LAGACHE, Chrystelle

IPC: H01L21/762 ,  H01L21/20

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: The invention concerns a method for cutting a block of material (10) comprising the following steps: a) forming in the block a buried zone (12), embrittled by at least an ion-inserting step, the buried zone delimiting at least a surface part (14) of the block; b) forming at the embrittled zone at least an incipient cleavage (30, 36) using first separating means selected among inserting a tool, injecting a fluid, a heat treatment and/or ion implantation of an ionic species different from that inserted during the preceding step; and c) separating at the embrittled zone of the surface part (14) of the block a remaining part (16), called mass part, from the incipient cleavage (30, 36) using second means, different from the first separation means and selected among heat treatment and/or applying mechanical forces exerted between the surface part and the embrittled zone. The invention is useful for making micro-electronic, optoelectronic or micro-mechanical components,

公开(公告)号：KR1020010012507A

公开(公告)日：2001-02-15

申请号：KR1019997010462

申请日：1998-05-11

Applicant: 실리콘 제너시스 코포레이션

Inventor： 헨리,프란코이스,제이. ,  츄잉,네이썬,더블유.

IPC: H01L21/20

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: 본발명은도너기판(10)으로부터재료(12) 박막을형성하기위한기술에관한것이다. 상기기술은도너기판(10)의표면을통해상기표면하부의선택된깊이(20)까지선택된방식으로에너지입자를유입하는단계를포함하는데, 상기입자는선택된깊이및 선택된깊이에서의패턴을위한입자상에도너기판재료(12)를한정하기위해상대적으로고농도를가진다. 압력화된유체와같은에너지소스가선택된깊이(20)에서의기판(10)의제어된분할작용을시작하도록도너기판의선택된영역으로지향되며, 상기분할작용은도너기판의나머지부분으로부터도너재료를제거하기위해연장하는분할프런트를제공한다.

Abstract translation: 本发明涉及用于从供体基底（10）形成材料（12）的薄膜的技术。 该技术包括以选定的方式将能量粒子通过供体衬底10的表面引导到供体衬底10下方的表面的选定深度20， 并且具有相对较高的浓度来限定衬底材料12。 将诸如加压流体之类的能量源引导至供体基板的选定区域，以在选定深度20处开始基板10的受控分裂动作，其从供体基板的其余部分去除供体材料 在这个实施例中，

公开(公告)号：US20180086630A1

公开(公告)日：2018-03-29

申请号：US15716538

申请日：2017-09-27

Applicant: Infineon Technologies AG

Inventor： Andre BROCKMEIER ,  Roland RUPP ,  Francisco Javier SANTOS RODRIGUEZ

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/0015 ,  B81B3/0027 ,  B81B3/0097 ,  B81B2203/0118 ,  B81C1/00349 ,  B81C1/00357 ,  B81C2201/0192

Abstract: In various embodiments, a method of processing a monocrystalline substrate is provided. The method may include severing the substrate along a main processing side into at least two monocrystalline substrate segments, and forming a micromechanical structure comprising at least one monocrystalline substrate segment of the at least two substrate segments.

公开(公告)号：US20070122995A1

公开(公告)日：2007-05-31

申请号：US11627920

申请日：2007-01-26

Applicant: FRANCOIS HENLEY ,  Nathan Cheung

Inventor： FRANCOIS HENLEY ,  Nathan Cheung

IPC: H01L21/30 ,  H01L21/425

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US20060191627A1

公开(公告)日：2006-08-31

申请号：US11372542

申请日：2006-03-10

Applicant: Bernard Aspar ,  Chrystelle Lagache

Inventor： Bernard Aspar ,  Chrystelle Lagache

IPC: B32B38/10 ,  B32B37/00

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: A process for cutting out a block of material (10) comprising the following stages: (a) the formation in the block of a buried zone (12), embrittled by at least one stage of ion introduction, the buried zone defining at least one superficial part (14) of the block, (b) the formation at the level of the embrittled zone of at least one separation initiator (30, 36) by the use of a first means of separation chosen from amongst the insertion of a tool, the injection of a fluid, a thermal treatment and/or implantation of ions of an ionic nature different from that introduced during the preceding stage, and (c) the separation at the level of the embrittled zone of the superficial part (14) of the block from a remaining part (16), called the mass part, from the separation initiator (30, 36) by the use of a second means, different from the first means of separation and chosen from among a thermal treatment and/or the application of mechanical forces acting between the superficial part and the embrittled zone. Application for the manufacture of components for micro-electronics, opto-electronics or micro-mechanics.

Abstract translation: 一种用于切割材料块（10）的方法，包括以下阶段：（a）通过至少一个离子引入阶段脆化的埋入区（12）的块中的形成，所述掩埋区限定至少一个 块的表面部分（14），（b）通过使用从插入工具中选择的第一分离装置在至少一个分离引发剂（30,36）的脆化区的层面上形成， 流体的注入，离子性质的热处理和/或离子注入不同于在前一阶段引入的离子性离子，和（c）在所述表面部分（14）的脆化区域的水平分离 通过使用不同于第一分离装置的第二装置从选自热处理和/或应用程序的第二装置从分离引发剂（30,36）的剩余部分（16）中除去称为质量部分的块 的机械力作用在表面之间 部分和脆弱的区域。 用于制造微电子，光电子或微机械元件的应用。

公开(公告)号：US07029548B2

公开(公告)日：2006-04-18

申请号：US10312864

申请日：2001-07-11

Applicant: Bernard Aspar ,  Chrystelle Lagache

Inventor： Bernard Aspar ,  Chrystelle Lagache

IPC: B32B35/00

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: A process for cutting out a block of material includes a step of introducing ions in the block thereby forming an embrittled zone and defining at least one superficial part of the block. The method also includes a step of forming at least one separation initiator at the level of the embrittled zone, wherein the step of forming the separation initiator includes implanting ions of an ionic nature different from that introduced during the preceding step. The method further includes a step of separating at the level of the embrittled zone the superficial part of the block from a remaining part of the block from the separation initiator, wherein the separation step includes at least one of a thermal treatment and the application of mechanical forces acting between the superficial part and the embrittled zone.

Abstract translation: 用于切割材料块的方法包括在块中引入离子的步骤，从而形成脆化区并限定块的至少一个表面部分。 该方法还包括在脆化区的水平上形成至少一种分离引发剂的步骤，其中形成分离引发剂的步骤包括注入离子性质的离子，其与前述步骤中引入的离子性质不同。 该方法还包括在脆化区的水平上将块的表面部分与块的剩余部分从分离引发剂分离的步骤，其中分离步骤包括热处理和应用机械中的至少一种 在表面部分和脆弱区域之间作用的力。

公开(公告)号：US20050186758A1

公开(公告)日：2005-08-25

申请号：US10644644

申请日：2003-08-19

Applicant: Francois Henley ,  Nathan Cheung

Inventor： Francois Henley ,  Nathan Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。