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11.发明公开
公开(公告)号：EP3240009A4
公开(公告)日：2018-08-01
申请号：EP15872812
申请日：2015-12-15
Applicant: HAMAMATSU PHOTONICS KK
Inventor： SASAKI TATSUO
CPC classification number: H01J1/34 , H01J1/78 , H01J29/38 , H01J31/49 , H01J31/50 , H01J31/506 , H01J40/06 , H01J40/16 , H01J2201/3423 , H01J2201/3426 , H01J2231/50021
Abstract: The present invention improves sensitivity of the ultraviolet band of a photoelectric surface. A photoelectric surface 1 includes a window material 2 that transmits ultraviolet rays, a conductive film 3 that is formed on the window material 2 and has conductivity, an intermediate film 4 that is formed on the conductive film 3 and is formed of MgF 2 , and a photoelectric conversion film 6 that is formed on the intermediate film 4 and is formed of CsTe. Since the photoelectric surface 1 includes the intermediate film 4 formed of MgF 2 , the sensitivity of the ultraviolet band is improved.
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公开(公告)号：EP3028292A1
公开(公告)日：2016-06-08
申请号：EP13744444.4
申请日：2013-07-31
Inventor： BREUIL, Philippe , PESKOV, Vladimir , MARTINENGO, Paolo
CPC classification number: H01J1/34 , G01J1/429 , G08B17/12 , H01J1/78 , H01J29/38 , H01J31/49 , H01J40/16
Abstract: An electron filtering layer placed on a photocathode of a UV light detector allows to selectively filter out electrons generated from a photoconversion of long wavelengths. The filter may be tuned by selecting the material and the thickness of the electron filtering layer. By means of the filtering layer, background noise due to visible parts of the spectrum may be efficiently suppressed. Applications of the invention include a solar-blind flame and/or smoke detector.
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公开(公告)号：US09291578B2
公开(公告)日：2016-03-22
申请号：US13507895
申请日：2012-08-03
Applicant: David L. Adler
Inventor： David L. Adler
CPC classification number: G21K1/00 , G01N23/04 , G01N2223/1006 , G01N2223/611 , G21K7/00 , H01J1/78 , H01L23/49827 , H01L27/0203
Abstract: An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. In some embodiments, the integrated device and photoemissive structure are independently mounted and controlled. In other embodiments, the photoemissive device is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In other embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.
Abstract translation: 公开了用于集成电路等集成装置的检查和检查的装置。 X射线通过集成器件传输，入射到吸收x射线并发射电子的光发射结构上。 由发光结构发射的电子通过电子光学系统成形，以在检测器上形成发射电子的放大图像。 然后记录和处理该放大的图像。 在一些实施例中，集成装置和光发射结构被独立地安装和控制。 在其他实施例中，光发射器件直接沉积在集成器件上。 在一些实施例中，X射线的入射角度被改变以允许确定集成器件的内部三维结构。 在其他实施例中，将记录的图像与参考数据进行比较，以使得能够进行制造质量控制的检查。
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公开(公告)号：US20140037052A1
公开(公告)日：2014-02-06
申请号：US13507895
申请日：2012-08-03
Applicant: David L. Adler
Inventor： David L. Adler
CPC classification number: G21K1/00 , G01N23/04 , G01N2223/1006 , G01N2223/611 , G21K7/00 , H01J1/78 , H01L23/49827 , H01L27/0203
Abstract: An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed.In some embodiments, the integrated device and photoemissive structure are independently mounted and controlled. In other embodiments, the photoemissive device is deposited directly onto the integrated device.In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In other embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.
Abstract translation: 公开了用于集成电路等集成装置的检查和检查的装置。 X射线通过集成器件传输，入射到吸收x射线并发射电子的光发射结构上。 由发光结构发射的电子通过电子光学系统成形，以在检测器上形成发射电子的放大图像。 然后记录和处理该放大的图像。 在一些实施例中，集成装置和光发射结构被独立地安装和控制。 在其他实施例中，光发射器件直接沉积在集成器件上。 在一些实施例中，X射线的入射角度被改变以允许确定集成器件的内部三维结构。 在其他实施例中，将记录的图像与参考数据进行比较，以使得能够进行制造质量控制的检查。
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公开(公告)号：US4099198A
公开(公告)日：1978-07-04
申请号：US686374
申请日：1976-05-14
Applicant: Jonathan Ross Howorth , Peter James Pool
Inventor： Jonathan Ross Howorth , Peter James Pool
Abstract: The input surface of a photocathode consisting of a membrane of p-type silicon is modified to improve it's sensitivity. The p-type concentration is locally increased and the surface is coated with silicon nitride.
Abstract translation: 修改由p型硅膜构成的光电阴极的输入表面以提高其灵敏度。 p型浓度局部增加，表面涂有氮化硅。
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Patent Agency Ranking
公开(公告)号：WO2015014378A1
公开(公告)日：2015-02-05
申请号：PCT/EP2013/002274
申请日：2013-07-31
Inventor： BREUIL, Philippe , PESKOV, Vladimir , MARTINENGO, Paolo
CPC classification number: H01J1/34 , G01J1/429 , G08B17/12 , H01J1/78 , H01J29/38 , H01J31/49 , H01J40/16
Abstract: An electron filtering layer placed on a photocathode of a UV light detector allows to selectively filter out electrons generated from a photoconversion of long wavelengths. The filter may be tuned by selecting the material and the thickness of the electron filtering layer. By means of the filtering layer, background noise due to visible parts of the spectrum may be efficiently suppressed. Applications of the invention include a solar-blind flame and/or smoke detector.
Abstract translation: 放置在UV光检测器的光电阴极上的电子过滤层允许选择性地滤出由长波长的光转换产生的电子。 可以通过选择电子过滤层的材料和厚度来调节过滤器。 通过滤波层，可以有效地抑制由于频谱的可见部分引起的背景噪声。 本发明的应用包括太阳盲火焰和/或烟雾探测器。
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公开(公告)号：WO2016104243A1
公开(公告)日：2016-06-30
申请号：PCT/JP2015/085037
申请日：2015-12-15
Applicant: 浜松ホトニクス株式会社
Inventor： 佐々木 達夫
CPC classification number: H01J1/34 , H01J1/78 , H01J29/38 , H01J31/49 , H01J31/50 , H01J31/506 , H01J40/06 , H01J40/16 , H01J2201/3423 , H01J2201/3426 , H01J2231/50021
Abstract: 光電面の紫外線帯域における感度を向上させる。光電面１は、紫外線を透過する窓材２と、窓材２に形成され、導電性を有する導電膜３と、導電膜３に形成され、ＭｇＦ ２ からなる中間膜４と、中間膜４に形成され、ＣｓＴｅからなる光電変換膜６と、を備える。光電面１は、ＭｇＦ ２ からなる中間膜４を備えるので、紫外線帯域の感度が向上する。
Abstract translation: 本发明提高光电表面的紫外线带的灵敏度。 光电面1设置有透过紫外线的窗口材料2，形成在窗口材料2中并具有导电性的导电膜3，形成在导电膜3中并包含MgF 2的中间膜4和光电转换膜6 形成在中间膜4中并且包括CsTe。 由于光电面1设置有包含MgF 2的中间膜4，所以提高了紫外线带的灵敏度。
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公开(公告)号：JP6419572B2
公开(公告)日：2018-11-07
申请号：JP2014264384
申请日：2014-12-26
Applicant: 浜松ホトニクス株式会社
Inventor： 佐々木 達夫
CPC classification number: H01J1/34 , H01J1/78 , H01J29/38 , H01J31/49 , H01J31/50 , H01J31/506 , H01J40/06 , H01J40/16 , H01J2201/3423 , H01J2201/3426 , H01J2231/50021
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公开(公告)号：JP2016126839A
公开(公告)日：2016-07-11
申请号：JP2014264384
申请日：2014-12-26
Applicant: 浜松ホトニクス株式会社
Inventor： 佐々木 達夫
IPC: H01J43/28 , H01J31/50 , H01L31/0264 , H01J29/38
Abstract: 【課題】光電面の紫外線帯域における感度を向上させる。 【解決手段】光電面1は、紫外線を透過する窓材2と、窓材2に形成され、導電性を有する導電膜3と、導電膜3に形成され、MgF 2 からなる中間膜4と、中間膜4に形成され、CsTeからなる光電変換膜6と、を備える。光電面1は、MgF 2 からなる中間膜4を備えるので、紫外線帯域の感度が向上する。 【選択図】図1
Abstract translation: 要解决的问题：提高UV带中的光电表面的灵敏度。解决方案：光电表面1包括：允许UV光透射的窗口材料2; 导电膜3，形成在窗材料2上，具有导电性; 形成在导电膜3上的由MgF制成的中间层4; 以及形成在由CsTe制成的中间层4上的光电转换膜6。 由于光电表面1包括由MgF制成的中间层4，所以在UV带中的灵敏度得到改善。选择图1：
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