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    MOTEUR A EFFET HALL AVEC REGULATION DE LA TEMPERATURE DU DISPOSITIF DE CHAUFFAGE DE LA CATHODE
    16.
    发明申请
    MOTEUR A EFFET HALL AVEC REGULATION DE LA TEMPERATURE DU DISPOSITIF DE CHAUFFAGE DE LA CATHODE 审中-公开
    阴极加热装置的温度控制的霍尔效应电机

    公开(公告)号：WO2011135271A1

    公开(公告)日：2011-11-03

    申请号：PCT/FR2011/050980

    申请日：2011-04-29

    Applicant: SNECMA ,  MARCHANDISE, Frédéric ,  OBERG, Michael ,  CORNU, Nicolas

    Inventor： MARCHANDISE, Frédéric ,  OBERG, Michael ,  CORNU, Nicolas

    IPC: F03H1/00 ,  H01J1/22 ,  G05D23/24

    CPC classification number: F03H99/00 ,  B64G1/405 ,  F03H1/0031 ,  F03H1/0037 ,  F03H1/0062 ,  F03H1/0068 ,  F03H1/0075 ,  G05D23/24 ,  H01J1/15 ,  H01J1/22 ,  H01J19/08 ,  H01J19/16

    Abstract: L'invention concerne un moteur à effet Hall (1) comportant un canal de décharge (50) dont l'extrémité aval (52) est ouverte, une cathode (100) située à l'extérieur du canal de décharge (50), un système d'injection (30) apte à injecter des atomes de gaz dans ce canal de décharge (50), ce système d'injection (30) étant situé à l'extrémité amont de ce canal de décharge (50) et formant également anode, et un dispositif de chauffage (60) apte à chauffer cette cathode (100). Ce moteur (1) comprend en outre un moyen de mesure (70) de la température T d du dispositif de chauffage (60), et un circuit de régulation (80) de cette température T d de telle sorte que le dispositif de chauffage (60) chauffe tant que sa température T d est inférieure à une température seuil T s à partir de laquelle le démarrage du moteur est susceptible de se produire, et cesse de chauffer peu après que la température seuil T s est atteinte.

    Abstract translation: 本发明涉及一种霍尔效应电动机（1），包括：排放通道（50），其下游端（52）是开放的; 位于排出通道（50）外部的阴极（100）; 能够将气体原子注入到排出通道（50）中的注入系统（30），所述注入系统（30）位于排出通道（50）的上游端，并且还形成阳极; 以及能够加热阴极（100）的加热装置（60）。 电动机（1）还包括用于测量加热装置（60）的温度（Td）的装置（70）和用于控制所述温度（Td）的电路（80），使得加热装置（60） 阴极，只要器件的温度（Td）低于等于或高于电动机可启动的阈值温度（Ts），并且加热装置在达到阈值温度（Ts）后不久就停止加热。

    Vacuum tube
    17.
    发明授权
    Vacuum tube 有权
    真空管

    公开(公告)号：US09583300B2

    公开(公告)日：2017-02-28

    申请号：US15000353

    申请日：2016-01-19

    Applicant: NORITAKE ITRON CORPORATION ,  NORITAKE CO., LIMITED ,  KORG INC.

    Inventor： Kazunori Tatsuda ,  Tadami Maeda ,  Misa Yamanaka ,  Fumio Mieda

    IPC: H01J17/24 ,  H01J19/70 ,  H01J61/26 ,  H01J19/32 ,  H01J19/38 ,  H01J21/10

    CPC classification number: H01J19/38 ,  H01J19/08 ,  H01J19/12 ,  H01J19/32 ,  H01J19/70 ,  H01J21/10

    Abstract: The vacuum tube subject to the present invention comprises a filament and two pairs of a grid and an anode. The filament is tensioned linearly and emitting thermoelectrons. Both of the anodes are formed on the same face on a planar substrate. The filament is arranged parallel to the planar substrate at a position facing both of the anodes. Each of the grids is arranged, such that the grid faces the anode in the same pair at a first predetermined distance from the anode and has a second predetermined distance from the filament, between the anode and the filament. The vacuum tube comprises an intermediate filament fixing part fixing the filament at a position corresponding to an intermediate point between the anodes of the two pairs.

    Abstract translation: 根据本发明的真空管包括灯丝和两对栅极和阳极。 灯丝线性拉伸并发射热电子。 两个阳极均形成在平面基板上的同一面上。 灯丝在面向两个阳极的位置处平行于平面基板布置。 每个栅格被布置成使得栅格以相对于阳极的第一预定距离处的阳极面对阳极，并且在阳极和灯丝之间具有与灯丝的第二预定距离。 该真空管包括将灯丝固定在与两对的阳极之间的中间点对应的位置的中间丝固定部。

    Solid state vacuum devices and method for making the same
    18.
    发明授权
    Solid state vacuum devices and method for making the same 失效

    公开(公告)号：US07005783B2

    公开(公告)日：2006-02-28

    申请号：US10067625

    申请日：2002-02-04

    Applicant: RueyJen Hwu ,  Larry Sadwick

    Inventor： RueyJen Hwu ,  Larry Sadwick

    IPC: H01J1/46 ,  H01J21/10

    CPC classification number: H01J19/08 ,  H01J21/105

    Abstract: A solid state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises an anode positioned in the cavity of the substrate, a cathode suspended over the cavity of the substrate, and a grid positioned between the cathode and anode. In addition, the SSVD comprises a seal for creating a vacuum environment in the area surrounding the grid, cathode, and anode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current produced by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

    Solid state vacuum devices and method for making the same
    19.
    发明申请
    Solid state vacuum devices and method for making the same 失效
    固态真空装置及其制造方法

    公开(公告)号：US20030146681A1

    公开(公告)日：2003-08-07

    申请号：US10067625

    申请日：2002-02-04

    Applicant: InnoSys, Inc.

    Inventor： RueyJen Hwu ,  Larry Sadwick

    IPC: H01J001/46 ,  H01J021/10

    CPC classification number: H01J19/08 ,  H01J21/105

    Abstract: A solid state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises an anode positioned in the cavity of the substrate, a cathode suspended over the cavity of the substrate, and a grid positioned between the cathode and anode. In addition, the SSVD comprises a seal for creating a vacuum environment in the area surrounding the grid, cathode, and anode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current produced by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

    Abstract translation: 固态真空装置（SSVD）及其制造方法。 在一个实施例中，SSVD形成三极管器件，其包括其中形成有腔的衬底。 SSVD还包括位于衬底的空腔中的阳极，悬浮在衬底的空腔上的阴极和位于阴极和阳极之间的栅极。 此外，SSVD包括用于在围绕栅极，阴极和阳极的区域中产生真空环境的密封。 在向阴极施加热量时，电子从阴极释放，通过栅格并被阳极接收。 响应于接收电子，阳极产生电流。 由阳极产生的电流由施加到电网的电压控制。 本发明的其它实施例提供二极管，四极管，五极管和其它高阶器件配置。

    Microminiature thermionic vacuum tube
    20.
    发明授权
    Microminiature thermionic vacuum tube 失效
    微型热离子真空管

    公开(公告)号：US5841219A

    公开(公告)日：1998-11-24

    申请号：US778789

    申请日：1997-01-06

    Applicant: Laurence P. Sadwick ,  R. Jennifer Hwu ,  J. Mark Baird ,  Sherman Holmes

    Inventor： Laurence P. Sadwick ,  R. Jennifer Hwu ,  J. Mark Baird ,  Sherman Holmes

    IPC: H01J19/08 ,  H01J21/10 ,  H01J1/62

    CPC classification number: H01J19/08 ,  H01J21/105

    Abstract: An integrated circuit vacuum tube array includes an insulating or highly resistive substrate, electrically conductive materials disposed on the substrate to define and surround a plurality of first voids extending from the substrate upwardly through the material, a plurality of cathodes disposed on the material to bridge over the respective first voids, for emitting electrons when heated by circuitry that selectively heats the cathodes, first electrically resistive material disposed on the electrically conductive material to surround the cathodes and define a plurality of second voids thereabove, an electrically conductive grid disposed on the electrically resistive material to project partially into the second voids to define an opening in the grid above each cathode, for allowing the passage of electrons therethrough, circuitry to selectively apply a voltage to the grid to control electron flow and thereby control the electrical current produced at the anodes, second electrically resistive material disposed on the grid to define a plurality of third voids above the openings in the grid, and a plurality of electrically conductive anodes disposed on the second electrically resistive material over the third voids to receive electrons emitted by the cathodes and thereby produce an electrical current.

    Abstract translation: 集成电路真空管阵列包括绝缘或高电阻衬底，导电材料设置在衬底上以限定和围绕从衬底向上延伸通过材料的多个第一空隙，多个阴极设置在材料上以跨越 相应的第一空隙，用于当由选择性地加热阴极的电路加热时发射电子，设置在导电材料上的第一电阻材料以包围阴极并在其上限定多个第二空隙，设置在电阻上的导电栅格 材料部分地投入到第二空隙中以在每个阴极上方的栅格中限定开口，以允许电子通过其中，用于选择性地向电网施加电压以控制电子流并由此控制在阳极处产生的电流的电路 ，第二电解 设置在栅格上以在栅格中的开口上方限定多个第三空隙的多个材料，以及设置在第三空隙上的第二电阻材料上的多个导电阳极，以接收由阴极发射的电子，从而产生电 当前。

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