Abstract:
전계 방출 나노구조(18)는 마이크로방전 장치의 동작을 돕는다. 이러한 전계 방출 나노구조는 마이크로방전 장치(들)에 통합되거나 마이크로방전 장치(들)의 전극(14, 16, 36, 38) 부근에 위치된다. 이러한 전계 방출 나노구조는 전계 방출 나노구조가 없는 다른 동일한 장치와 비교해서 동작 전압 및 점화 전압을 감소시키면서, 또한 마이크로방전 장치(들)의 방사 출력도 증가시킨다.
Abstract:
The high frequency electron source has a discharge chamber (11) with at least one gas inlet (14) for a gas to be ionized and at least one extraction opening (16) for electrons. The discharge chamber is at least partly enclosed by at least one electrode (12a) and a keeper electrode (12b) and a high frequency field is applied between the electrodes. The discharge chamber can be enclosed by a plasma chamber.
Abstract:
A linear plasma electron source (100) is provided. The linear plasma electron source includes a housing (112) acting as a first electrode, the housing having side walls (312), a slit opening (114) in the housing for trespassing of a electron beam, the slit opening defining a length direction of the source, a second electrode (110) being arranged within the housing and having a first side (413) facing the slit opening, the first side being spaced from the slit opening by a first distance, wherein the length of the electron source in the length direction is at least 5 times the first distance, and at least one gas supply (70) for providing a gas into the housing.
Abstract:
The present invention discloses in cathodic arc plasma, a system of obtaining a high current emission of hot electrons having temperature equivalent to 10 eV to 15 eV, by an Arc Plasma Emitter and method utilizing the same. The system is especially adapted for polishing gemstone, and growing a 3D crystal by the same.
Abstract:
One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whose output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.
Abstract:
A method of generating light comprising the step of applying an electric field to an excimer-forming gas such as a gas mixture containing noble gases and hydrogen or halogen, and providing free electrons in the gas. The electric field is configured to accelerate electrons to at least the energy required to form excimers, but in at least one region of the electric field, the field does not substantially ionize the gas, so that the field does not induce arcing through the gas. For example, electrons can be injected from one or more field emission electrodes (18) such as one or more a metal needle tip conductors, whereas the electric field can be a field between the field emission electrodes and a counterelectrode (13).