公开(公告)号：EP1047183A2

公开(公告)日：2000-10-25

申请号：EP00303239.8

申请日：2000-04-17

Applicant: Dynex Semiconductor Limited

Inventor： Bird, John ,  Flatters, Gary Stephen ,  Whitworth, Bernard

IPC: H03B9/14

CPC classification number: H03B9/146 ,  H03B2201/015

Abstract: An oscillator body 10 defines a waveguide 11 in which is supported a Gunn diode 15. The Gunn diode 15 is thermally and electrically connected to a surface of a heat sink having a cylindrical main body 40 which is supported in the body 10 by an interference or tight sliding fit. A frequency tuning probe 65 is supported by an interference fit for longitudinal displacement into the region between a lower face 66 of an RF choke 13, in order to allow the frequency of operation of the oscillator to be controllably adjusted. A cylindrical short circuit 62 is supported in a cylindrical portion 61 of the waveguide 11 by an interference fit, whereby the output power of the oscillator can be accurately and reliably adjusted. A rectangular cross-section portion of the waveguide 11 meets the cylindrical portion 61 with a step transition.

Abstract translation: 振荡器主体10限定波导管11，在该波导管中支撑耿氏二极管15.耿氏二极管15热和电连接到散热器的表面，该散热器具有圆柱形主体40，该主体40通过干涉支撑在主体10中或 紧身滑动配合。 频率调谐探头65通过干涉配合支持，以纵向移动到RF扼流圈13的下表面66之间的区域中，以便可控地调节振荡器的操作频率。 圆柱形短路62通过干涉配合被支撑在波导11的圆柱形部分61中，由此可以精确和可靠地调整振荡器的输出功率。 波导管11的矩形横截面部分以阶跃过渡与圆柱形部分61相遇。

公开(公告)号：EP0277204B1

公开(公告)日：1992-10-07

申请号：EP87905493.0

申请日：1987-07-15

Applicant: Hughes Aircraft Company

Inventor： LI, Hsiu, Y.

IPC: H03B9/14

CPC classification number: H03B9/145 ,  H03B7/08 ,  H03B2200/0074 ,  H03B2201/015 ,  H03B2201/0208

Abstract: The four-diode bridge (14) is positioned within the cavity (10) of a Gunn diode (12) oscillator. A subharmonic signal is applied to the diode bridge and the diode bridge couples an odd harmonic of the injected signal into the cavity. The cavity is thus caused to resonate at the odd harmonic of the injected signal. The injected signal can be changed using a frequency synthesizer (26) in order to provide a microwave oscillator with multiple-channel operation. The diode bridge provides a feedback signal indicative of the phase of the cavity oscillation. The feedback signal is applied to a varactor (24) which pretunes the Gunn diode oscillator and thereby provides phase-locked control.

公开(公告)号：EP0125451B1

公开(公告)日：1988-11-23

申请号：EP84103598.3

申请日：1984-03-31

Applicant: NORTHERN TELECOM LIMITED

Inventor： Znojkiewicz, Maciej Edward

IPC: H03B7/14 ,  H01P1/00

CPC classification number: H03B5/1823 ,  H03B2201/015

公开(公告)号：EP0290794A1

公开(公告)日：1988-11-17

申请号：EP88105716.0

申请日：1988-04-11

Applicant: ALCATEL TELSPACE

Inventor： Mettoudi, Isaac ,  Lafranca, François

IPC: H03B5/18

CPC classification number: H03B5/1876 ,  H01P7/10 ,  H03B5/1852 ,  H03B7/14 ,  H03B2201/015 ,  H03B2201/017

Abstract: Oscillateur comporte un élément à résistance négative (18) et un résonateur diélectrique (19) disposé à la surface d'un substrat (13, 14) situé à l'intérieur d'un boîtier (10), dans lequel le boîtier (10) est muni d'un dégagement situé au dessus du résonateur diélectrique (19).
Application au domaine des hyperfréquences.

公开(公告)号：WO2017144873A1

公开(公告)日：2017-08-31

申请号：PCT/GB2017/050454

申请日：2017-02-22

Applicant: HOOLEY, Anthony

Inventor： HOOLEY, Anthony

IPC: H01P7/06 ,  H03J1/06 ,  H03J3/20

CPC classification number: H03J1/10 ,  H01P7/06 ,  H03B2201/015 ,  H03B2201/0233 ,  H03J3/20

Abstract: A tuning device for an RF cavity or RF antenna has an actuator (7) mechanically coupled (8) to a tuning element (14), such as a tuning pin of an RF cavity. The actuator is an SMA-wire actuator capable of linear movement connected via a mechanical link to an RF tuning pin such that the tuning pin is moveable by the actuator in and out of the RF-cavity. The actuator may comprise a straight SMA wire or a bowstring SMA wire coupled to a return spring, or it may be an SMA-wire actuator comprising a pair of opposed bowstring-actuators (1,2) eliminating the requirement for a return spring and with a design methodology that allows a wide range of performance specifications and envelope sizes.

Abstract translation: 用于RF谐振腔或RF天线的调谐装置具有与调谐元件（14）（例如RF谐振腔的调谐引脚）机械耦合（8）的致动器（7）。 致动器是一个SMA线制动器，能够通过机械连接线性连接到射频调谐引脚，使得调谐引脚可通过执行器进出射频腔移动。 致动器可以包括连接到复位弹簧的直SMA线或弓弦SMA线，或者其可以是包括一对相对的弓弦致动器（1,2）的SMA线致动器，其消除了对复位弹簧的需求并且与 一种允许广泛的性能规格和信封尺寸的设计方法。

公开(公告)号：WO2016066227A1

公开(公告)日：2016-05-06

申请号：PCT/EP2014/073490

申请日：2014-10-31

Applicant: TELEFONAKTIEBOLAGET L M ERICSSON (PUBL)

Inventor： BAO, Mingquan ,  LIGANDER, Per

IPC: H03B5/12 ,  H03B5/18

CPC classification number: H03B5/1823 ,  H03B5/1215 ,  H03B5/1231 ,  H03B5/1278 ,  H03B2200/009 ,  H03B2201/015 ,  H03B2201/031

Abstract: The present invention relates to an oscillator device (1) comprising a first amplifier unit (2) and a waveguide cavity resonator (3) with a cavity (11) and a first tuning device (4) mounted in the cavity (11). The cavity (11) has a first cavity length (a) running between two opposing inner walls (5,6) where a resonance frequency (f r ) of the resonator (3) is dependent on the first cavity length (a). The first tuning device (4) comprises at least one row (13, 14, 15) of switches (16) that are electrically openable and closable. Each row (13, 14, 15) is arranged to constitute an electrically conducting connection between said opposing inner walls (7, 8) when the switches of said row are closed. The first amplifier unit (2) is electrically connected to the waveguide cavity resonator (3) by means of a first (35) and a second connector (36) which are mutually out of phase with each other. The first amplifier unit (2) further comprises a first amplifier arrangement (37) and a tuneable bias connection (38).

Abstract translation: 本发明涉及一种包括第一放大器单元（2）和具有空腔（11）的波导腔谐振器（3）和安装在空腔（11）中的第一调谐装置（4））的振荡器装置（1）。 空腔（11）具有在两个相对的内壁（5,6）之间延伸的第一腔体长度（a），其中谐振器（3）的谐振频率（fr）取决于第一腔体长度（a）。 第一调谐装置（4）包括可电开启和关闭的开关（16）的至少一行（13,14,15）。 每排（13,14,15）被布置成当所述行的开关闭合时在所述相对的内壁（7,8）之间构成导电连接。 第一放大器单元（2）通过彼此相位异相的第一（35）和第二连接器（36）电连接到波导腔谐振器（3）。 第一放大器单元（2）还包括第一放大器装置（37）和可调偏置连接（38）。

公开(公告)号：EP1047183A3

公开(公告)日：2002-04-24

申请号：EP00303239.8

申请日：2000-04-17

Applicant: Dynex Semiconductor Limited

Inventor： Bird, John ,  Flatters, Gary Stephen ,  Whitworth, Bernard

IPC: H03B9/14 ,  H03B5/18 ,  H03B9/12

CPC classification number: H03B9/146 ,  H03B2201/015

Abstract: An oscillator body 10 defines a waveguide 11 in which is supported a Gunn diode 15. The Gunn diode 15 is thermally and electrically connected to a surface of a heat sink having a cylindrical main body 40 which is supported in the body 10 by an interference or tight sliding fit. A frequency tuning probe 65 is supported by an interference fit for longitudinal displacement into the region between a lower face 66 of an RF choke 13, in order to allow the frequency of operation of the oscillator to be controllably adjusted. A cylindrical short circuit 62 is supported in a cylindrical portion 61 of the waveguide 11 by an interference fit, whereby the output power of the oscillator can be accurately and reliably adjusted. A rectangular cross-section portion of the waveguide 11 meets the cylindrical portion 61 with a step transition.

公开(公告)号：EP0125451A3

公开(公告)日：1985-11-27

申请号：EP84103598

申请日：1984-03-31

Applicant: NORTHERN TELECOM LIMITED

Inventor： Znojkiewicz, Maciej Edward

IPC: H03B07/14

CPC classification number: H03B5/1823 ,  H03B2201/015

Abstract: A microwave cavity oscillator has a semiconductor device, for example a transistor (50) for exciting the cavity (12) to oscillate. The device is mounted upon a substrate which is itself mounted, conveniently soldered, upon a carrier (32) which is releasably secured in a chamber (14) adjacent the cavity. The carrier (32) and substrate (42) are mounted so that the device (50) is coupled to the cavity via a hole (22) extending therebetween and can be removed and installed as a sub-assembly to facilitate tuning and other adjustments in a test bed. In preferred embodiments one end of the carrier is located in spigot-and-socket fashion in a recess (24) surrounding a hole communicating with the cavity. The other end of the carrier is urged by spring means (44) to positively and accurately locate the carrier relative to the cavity. A part (46) of the substrate extends through the hole and into the cavity. The transistor (50) is mounted on the part within the hole and the part within the cavity serves as a capacitive coupling probe (48).

公开(公告)号：EP0125451A2

公开(公告)日：1984-11-21

申请号：EP84103598.3

申请日：1984-03-31

Applicant: NORTHERN TELECOM LIMITED

Inventor： Znojkiewicz, Maciej Edward

IPC: H03B7/14 ,  H01P1/00

CPC classification number: H03B5/1823 ,  H03B2201/015

Abstract: A microwave cavity oscillator has a semiconductor device, for example a transistor (50) for exciting the cavity (12) to oscillate. The device is mounted upon a substrate which is itself mounted, conveniently soldered, upon a carrier (32) which is releasably secured in a chamber (14) adjacent the cavity. The carrier (32) and substrate (42) are mounted so that the device (50) is coupled to the cavity via a hole (22) extending therebetween and can be removed and installed as a sub-assembly to facilitate tuning and other adjustments in a test bed. In preferred embodiments one end of the carrier is located in spigot-and-socket fashion in a recess (24) surrounding a hole communicating with the cavity. The other end of the carrier is urged by spring means (44) to positively and accurately locate the carrier relative to the cavity. A part (46) of the substrate extends through the hole and into the cavity. The transistor (50) is mounted on the part within the hole and the part within the cavity serves as a capacitive coupling probe (48).

公开(公告)号：US4940953A

公开(公告)日：1990-07-10

申请号：US402664

申请日：1989-09-05

Applicant: John R. Lamberg

Inventor： John R. Lamberg

IPC: H03B1/00 ,  H03B9/14

CPC classification number: H03B9/145 ,  H03B2009/126 ,  H03B2201/015 ,  H03B9/147

Abstract: A millimeter wave microstrip oscillator utilizing either a pulsed or CW IMPATT diode as the active element provides relatively high power output not available with a GUNN diode. The circuit comprises a block of a conductive metal having a channel of rectangular cross-section formed therein and including a cylindrical well formed inwardly in the block from the floor of the channel. A packaged IMPATT diode of either the pulsed or CW variety fits into the well with the cap portion of the package coplanar with the microstrip circuit pattern when the microstrip rests on the floor of the channel. The pattern includes a shunt open circuit stub and an impedance transformer connected to the terminals of the IMPATT diode for effectively matching the diode's complex impedance with the load. A conductive cover is secured to the block and a laterally and vertically movable tuning screw passes through the cover for fine tuning the oscillator's output frequency and power. The circuit is capable of producing CW or pulsed signals with appropriate choice of IMPATT diode bias signal (pulsed or DC), microstrip circuit pattern dimensions and tuning screw diameter and position.

Abstract translation: 使用脉冲或CW IMPATT二极管作为有源元件的毫米波微带振荡器提供GUNN二极管不可用的较高功率输出。 该电路包括导电金属块，其具有形成在其中的矩形横截面的通道，并且包括从通道的底部向内形成的圆柱形阱。 当微带搁置在通道的地板上时，脉冲或CW品种的封装IMPATT二极管装配到阱中，封装的盖部分与微带电路图案共面。 该模式包括分流开路短截线和连接到IMPATT二极管的端子的阻抗变换器，用于有效地将二极管的复阻抗与负载匹配。 导电盖固定到块上，并且横向和可垂直移动的调谐螺钉穿过盖子，以微调振荡器的输出频率和功率。 该电路能够通过适当选择IMPATT二极管偏置信号（脉冲或DC），微带电路图形尺寸和调谐螺杆直径和位置来产生CW或脉冲信号。