微波振荡电路和应用它的下变频器

    公开(公告)号:CN1101601C

    公开(公告)日:2003-02-12

    申请号:CN96111308.1

    申请日:1996-07-26

    CPC classification number: H03B5/1876 H03B2201/017

    Abstract: 一种微波振荡电路及具备该电路的下变频器。该振荡电路在与金属板紧贴配置的电介质电路板上安装微波振荡用微波场效应管FET,微带线一端连接微波场效应管FET栅极接线端,另一端经电阻接地。介质谐振器通过隔片,用一般粘接剂固定于覆盖在电介质电路板上部的金属制屏蔽盒内壁面上,与微带线相耦合,从微波场效应管FET源极接线端稳定地取出预定的振荡频率。不需要粘合电介质电路板用的特殊预处理,并能自由设定耦合度。具有生产效率高、可靠性高、成本低等优点。

    微波振荡电路和应用它的下变频器

    公开(公告)号:CN1148280A

    公开(公告)日:1997-04-23

    申请号:CN96111308.1

    申请日:1996-07-26

    CPC classification number: H03B5/1876 H03B2201/017

    Abstract: 一种微波振荡电路及具备该电路的下变频器。该振荡电路在与金属板紧贴配置的电介质电路板上安装微波振荡用FET,微带线一端连接FET栅极接线端,另一端经电阻接地。介质谐振器通过隔片,用一般粘结剂固定于覆盖在电介质电路板上部的金属制屏蔽盒内壁面上,与微带线相耦合,从FET源极接线端稳定地取出预定的振荡频率,不需要粘合电介质电路板用的特殊预处理,并能自由设定耦合度。具有生产效率高、可靠性高、成本低等优点。

    DIELECTRIC RESONATOR
    3.
    发明申请
    DIELECTRIC RESONATOR 审中-公开
    电介质谐振器

    公开(公告)号:WO1997019512A1

    公开(公告)日:1997-05-29

    申请号:PCT/GB1996002806

    申请日:1996-11-18

    Inventor: PYRONIX LIMITED

    CPC classification number: H03B5/1876 H03B2201/017

    Abstract: A circuit comprising a dielectric resonator wherein the dielectric resonator is positioned within a chamber, the chamber being formed by a housing with a wall having selectable or predeterminable electromagnetic characteristics, and wherein the position of the dielectric resonator relative to the wall or walls, and the dimensions of the chamber, providing a controlled, and preferably uniform electrical and magnetic fied environment for the dielectric resonator.

    Abstract translation: 一种包括介质谐振器的电路,其中所述介质谐振器位于腔室内,所述腔室由具有可选择或可预定电磁特性的壁的壳体形成,并且其中介质谐振器相对于壁或壁的位置以及 提供腔室的尺寸,为介质谐振器提供受控的,优选均匀的电磁环境。

    Dielectrically stabilized GaAs FET oscillator with two power output
terminals
    5.
    发明授权
    Dielectrically stabilized GaAs FET oscillator with two power output terminals 失效
    具有两个功率输出端子的绝缘稳定的GaAs FET振荡器

    公开(公告)号:US4818956A

    公开(公告)日:1989-04-04

    申请号:US83567

    申请日:1987-08-03

    Applicant: Antun Stajcer

    Inventor: Antun Stajcer

    CPC classification number: H03B5/1876 H03B2201/017 H03B2202/02 H03B5/1852

    Abstract: A dielectrically stabilized planar GaAs FET oscillator has a single gate transistor with a gate terminal and a drain terminal. A cylindrically shaped dielectric resonator is mounted on a ceramic support. The dielectric resonator resonates in a TE.sub.01 mode and is located on the gate line of the transistor a predeterminated distance from the gate terminal. The transistor is biased so that the dielectric resonator alone can stabilize the power produced by the transistor. Stabilized output power is obtained from both the drain terminal and the gate terminal. With previous oscillators having a single gate transistor, output power could only be obtained from one terminal.

    Abstract translation: 介质稳定的平面GaAs FET振荡器具有单栅极晶体管,其具有栅极端子和漏极端子。 圆柱形介质谐振器安装在陶瓷支架上。 介质谐振器以TE01模式谐振,并且位于与栅极端子预定距离的晶体管的栅极线上。 晶体管被偏压,使得介质谐振器单独可以稳定由晶体管产生的功率。 从漏极端子和栅极端子都获得稳定的输出功率。 对于具有单个栅极晶体管的先前振荡器,只能从一个端子获得输出功率。

    Low noise cryogenic dielectric resonator oscillator
    6.
    发明授权
    Low noise cryogenic dielectric resonator oscillator 失效
    低噪声低介电谐振器

    公开(公告)号:US4757278A

    公开(公告)日:1988-07-12

    申请号:US116810

    申请日:1987-11-05

    Applicant: G. John Dick

    Inventor: G. John Dick

    Abstract: A microwave oscillator is provided which can operate at a temperature of many degrees above absolute zero while providing very low phase noise that has heretofore generally required temperatures within a few degrees K. The oscillator includes a ring-shaped resonator element of ruby (sapphire plus chromium) or iron sapphire crystal, lying adjacent to a resonator element of sapphire, so the regenerator element lies directly in the magnetic field of the resonator element. The resonator element is substantially devoid of contact with electrically conductive material. Microwave energy of a pump frequency (e.g. 31GHz) is applied to the regenerator element, while signal energy (e.g. 10GHz) is outputted from the resonator element.

    Abstract translation: 提供了一种微波振荡器,其可以在绝对零度以上的多个温度下工作,同时提供迄今为止通常需要在几度K内的温度的非常低的相位噪声。振荡器包括红宝石(蓝宝石加铬 )或铁蓝宝石晶体,位于蓝宝石的谐振元件附近,因此再生器元件直接位于谐振器元件的磁场中。 谐振器元件基本上不与导电材料接触。 泵浦频率(例如31GHz)的微波能量被施加到再生器元件,同时从谐振器元件输出信号能量(例如10GHz)。

    Frequency shift key modulating oscillator

    公开(公告)号:US20010022540A1

    公开(公告)日:2001-09-20

    申请号:US09836047

    申请日:2001-04-16

    Inventor: John P. Hill

    CPC classification number: H03C3/16 H03B5/1847 H03B5/187 H03B2201/017

    Abstract: The present invention teaches a system for selectably oscillating at a first or a second oscillating frequency. The system comprises an oscillator for providing an oscillating output. Moreover, the system comprises a switching device for selecting a first or a second impedance in response to a select signal having a voltage. Each of the first and second impedances are fixed independently of the select signal voltage such that the oscillating output oscillates at the first oscillating frequency when the first impedance is provided and oscillates at the second oscillating frequency when the second impedance is provided.

    Microwave oscillator in which the dielectric resonator is hermetically
sealed
    9.
    发明授权
    Microwave oscillator in which the dielectric resonator is hermetically sealed 失效
    其中介质谐振器被气密密封的微波振荡器

    公开(公告)号:US4922211A

    公开(公告)日:1990-05-01

    申请号:US318969

    申请日:1989-03-06

    CPC classification number: H03B5/1864 H03B2201/017

    Abstract: A microwave oscillator which has a dielectric resonator which has properties which are dependent on the atmospheric humidity and which should be sealed in a hermetically air tight container to eliminate variations in its characteristics. The dielectric resonator is mounted in a hermetically sealed air tight cavity inside a metal housing in which the electrical circuit is mounted and is arranged at a position relative to coupling elements on a film printed circuit board which has a metallized surface on one side thereof.

    Abstract translation: 一种具有介电谐振器的微波振荡器,其具有取决于大气湿度的特性,并且应该密封在气密的容器中以消除其特性的变化。 介质谐振器安装在金属壳体内的气密密封的气密腔中,其中安装有电路,并且布置在相对于在其一侧上具有金属化表面的膜印刷电路板上的耦合元件的位置。

    Wide band dielectric resonator oscillator having temperature compensation
    10.
    发明授权
    Wide band dielectric resonator oscillator having temperature compensation 失效
    具有温度补偿的宽带介质谐振器

    公开(公告)号:US4618836A

    公开(公告)日:1986-10-21

    申请号:US685662

    申请日:1984-12-24

    CPC classification number: H03B5/1876 H03B2200/0024 H03B2201/017 H03B5/1852

    Abstract: A improved microwave dielectric oscillator module which is provided with a removable temperature compensated dielectric resonator channel element is described. The removable temperature compensated dielectric resonator channel element cooperates with an electrically shielded housing. A substrate is mounted within the housing. Microstrip or stripline conductive patterns deposited on the substrate couple energy from the removable dielectric resonator to the remainder of the oscillator circuitry. The oscillator achieves wideband operation utilizing a GaAs FET transistor as the oscillators active element in conjunction with an intergral trombone-line phase adjuster.

    Abstract translation: 描述了一种改进的微波介质振荡器模块,其具有可拆卸的温度补偿介质谐振器通道元件。 可移除温度补偿介质谐振器通道元件与电屏蔽壳体协作。 衬底安装在壳体内。 沉积在衬底上的微带或带状导电图案将可移除介质谐振器的能量耦合到振荡器电路的其余部分。 振荡器使用GaAs FET晶体管作为振荡器有源元件与整体长号线相位调节器结合实现宽带操作。

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