Abstract:
The invention relates to an improved bipolar transistor structure (1) that may be integrated into a Darlington configuration, of the type having conventional base (B), collector (C) and emitter (E) terminals and comprising a resistance (R) between the collector (C) and the (B) and a thyristor device (3) SCR between the base (B) and the emitter (E). The resistance (R) is a high voltage resistance to keep normally ON the transistor structure while the thyristor is a turning off circuit that is enabled and driven on its gate terminal.
Abstract:
A method of communication for use, for instance, in systems such as solar panel power generation systems, house monitoring systems, traffic surveillance systems or smart street lighting systems may comprise:- providing a communication circuit (such as a modem 10) for communicating signals conveying information messages, the communication circuit (10) supporting a first communication protocol (101), adopting, for instance, S-FSK modulation, and a second communication protocol (102), adopting, for instance,PSK or QAM modulation,- including in the communicated signals first signals conveying first information messages and second signals conveying second information messages, wherein the first information messages comprise repetitive messages having fixed repeated content and the second information messages comprise non-repetitive messages having variable content, and- transmitting the first signals and the second signals via the communication circuit using the first communication protocol (101) for the first, repetitive signals and the second communication protocol (102) for the second, non-repetitive signals, respectively.
Abstract:
A method comprising: receiving a transaction associated with an address and having a transaction destination, said address being in an interleaved region of a memory; determining one of a plurality of destinations for said transaction, different parts of said interleaved memory region being respectively accessible by said plurality of destinations; and associating routing information to said transaction, said routing information associated with the determined destination.
Abstract:
A detection, structure (1) for a z-axis resonant accelerometer (24) is provided with an inertial mass (2) anchored to a substrate (20) by means of elastic anchorage elements (6) so as to be suspended above the substrate (20) and perform an inertial movement of rotation about a first axis of rotation (A) belonging to a plane (xy) of main extension of the inertial mass (2), in response to an external acceleration (a-) acting along a vertical axis (z) transverse with respect to the plane (xy); and a first resonator element (10a) and a second resonator element (10b), which are mechanically coupled to the inertial mass (2) by respective elastic supporting elements (16), which enable a movement of rotation about a second axis of rotation (B) and a third axis of rotation (C), in a resonance condition. In particular, the second axis of rotation (B) and the third axis of rotation (C) are parallel to one another, and are moreover parallel to the first axis of rotation (A) of the inertial mass (2).
Abstract:
A low voltage isolation circuit (1) is described inserted between a connection node (HVout) to a matrix (2) of switches suitable for receiving a high voltage signal (IM) and a connection terminal (pzt) to a load (PZ) suitable for transmitting said high voltage signal (IM) to said load (PZ) of the type comprising at least one driving block (5) inserted between a first and a second voltage reference (Vss, - Vss) and comprising at least a first driving transistor (M l), inserted, in series with a first driving diode (Dl), between the first voltage reference (Vss) and a first driving central circuit node (Xc) and a second driving transistor (M2), in turn inserted, in series with a second diode (D2), between the driving central circuit node (Xc) and the second supply voltage reference (-Vss). The switch comprises an isolation block (8) connected to the connection terminal (pzt), to the connection node (HVout) and to the driving central circuit node (Xc) and comprising at least one voltage limiter block (6), a diode block (7) and a control transistor (MD), in turn connected across the diode block (7) between the connection node (HVout) to the matrix (2) of switches and the connection terminal (pzt) to the load (PZ) of the low voltage isolation switch (1) and having a control terminal (XD) connected to the driving central circuit node (Xc).
Abstract:
An integrated magnetoresistive device, where a substrate (17) of semiconductor material is covered, on a first surface (19), by an insulating layer (18). A magnetoresistor (26) of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator (34) of ferromagnetic material including at least one arm (34a), extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor (26). In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.
Abstract:
The invention relates to a security system comprising at least one integrated circuit (24a) and a transceiver / transponder circuit (30), the at least one integrated circuit (24a) being provided with an antenna (36) for communicating with the transceiver / transponder circuit (30), an inhibiting element (24b, 44, 44a, 44b) being associated with the at least one integrated circuit (24a) for inhibiting communications with the transceiver / transponder circuit (30) and for securing the data contained in the at least one integrated circuit (24a). Advantageously, the inhibiting element (24b, 44, 44a, 44b) is an electromagnetic inhibiting element, the security system further comprising a coupling element (22) that is associated with the antenna (36) of the at least one integrated circuit (24a) for temporarily deactivating the electromagnetic inhibiting element (24b, 44, 44a, 44b) to allow communications between the at least one integrated circuit (24a) and the transceiver / transponder circuit (30).
Abstract:
A transmission channel (1) is described comprising at least one high voltage buffer block (4) comprising buffer transistors (MB1, MB2, MB3, MB4) and respective buffer diodes (DB1, DB2, DB3, DB4), being inserted between respective voltage references (HVP0, HVP1, HVM0, HVM1), a clamping circuit (10) being connected to a first output terminal (HVout) of the transmission channel (1), an antinoise block (6) being connected between the first output terminal (HVout) and a connection terminal (Xdcr) of the transmission channel (1); as well as a switching circuit (30) being inserted between the connection terminal (Xdcr) and a second output terminal (LVout) of the transmission channel (1). Advantageously according to the invention, the clamping circuit (10) comprises a clamping core (11), a reset circuit (20) comprising diodes (DME1, DME2, DME3, DME4 ) inserted between circuit nodes (XME1, XME2, XME3, XME4, XC1, XC2) of the high voltage buffer block (4) and of the clamping circuit (10), the circuit nodes (XME1, XME2, XME3, XME4, XC1, XC2 ) being in correspondance with conduction terminals of said transistors (MB1,MB2,MB3,MB4,MC1,MC2) comprised into the high voltage buffer block(4) and into the clamping circuit (10), and a switching circuit (30).
Abstract:
A low voltage isolation circuit (1) is described inserted between an input terminal (HVout) suitable for receiving a high voltage signal (IM) and an output terminal (pzt) suitable for transmitting the high voltage signal (IM) to a load (PZ) of the type comprising at least one driving block (5) inserted between a first and a second voltage reference (Vss, -Vss) and comprising a first driving transistor (Ml), inserted between the first voltage reference (Vss) and a first driving central circuit node (Xc) and a second driving transistor (M2), in turn inserted between the driving central circuit node (Xc) and the second supply voltage reference (-Vss) as well as an isolation block (8) connected to the connection terminal (pzt), to the input terminal (HVout) and, through a protection block (9) comprising a first and a second protection transistor (MD1, MD2), being in anti-series to each other and having control terminals receiving respective complementary protection driving signals (dr1, dr2), to the driving central circuit node (Xc), the isolation block (8) comprising at least one voltage limiter block (6), a diode block (7) and a control transistor (MD), in turn connected across the diode block (7) between the input (HVout) and output (pzt) terminals of the low voltage isolation switch (1) and having a control terminal (XD) connected to the driving central circuit node (Xc) through the protection block (9), said diode block (7) comprising at least one first and one second transmission diode (DN1, DN2), connected in antiparallel, i.e. by having an anode terminal of said first diode connected to a cathode terminal of said second diode and vice versa.
Abstract:
The invention relates to a High Voltage switch configuration (10) having an input terminal (IN) which receives an input signal (Vin) to drive a load and an output terminal (OUT) which issues an output signal (Vout) to the load. Advantageously according to the invention, the High Voltage switch configuration ( 10) comprises at least a first and a second diode (D1, D2), being placed in antiseries between said input and output terminals (IN, OUT) and having a pair of corresponding terminals in common, in correspondence of a first internal circuit node (Xc1).