公开(公告)号：US07427387B2

公开(公告)日：2008-09-23

申请号：US11405584

申请日：2006-04-18

Applicant: Yoshio Katsuro ,  Keiji Yamahara ,  Takashi Yamaguchi ,  Yutaka Mori

Inventor： Yoshio Katsuro ,  Keiji Yamahara ,  Takashi Yamaguchi ,  Yutaka Mori

IPC: C01B33/12 ,  C01B33/18 ,  C01B33/157 ,  C01B33/158 ,  C03C3/06 ,  C08K3/36

CPC classification number: C03C1/006 ,  C03B19/01 ,  C03B19/09 ,  C03B19/1065 ,  C03B19/1095 ,  C03B2201/03 ,  C03C3/06 ,  C03C12/00 ,  C03C2201/02 ,  C03C2203/26

Abstract: Subjects for the invention are to obtain a quartz powder having a high purity and high quality and a process for producing the same and to obtain a glass molding formed by melting and molding the powder and extremely reduced in bubble inclusion.The invention provides a quartz powder, preferably a synthetic quartz powder obtained by the sol-gel method, which, upon heating from room temperature to 1,700° C., generates gases in which the amount of CO is 300 nl/g or smaller and the amount of CO2 is 30 nl/g or smaller.

Abstract translation: 本发明的目的是获得具有高纯度和高质量的石英粉及其制造方法，并获得通过熔融和成型粉末形成并且气泡夹杂物极度降低的玻璃模制品。 本发明提供一种石英粉末，优选通过溶胶 - 凝胶法获得的合成石英粉末，其在室温至1700℃加热时产生CO的量为300nl / g或更小的气体， CO 2 2的量为30nl / g以下。

公开(公告)号：US07082789B2

公开(公告)日：2006-08-01

申请号：US10300739

申请日：2002-11-21

Applicant: Masanobu Ezaki ,  Lian-Sheng Pan ,  Seiji Taniike

Inventor： Masanobu Ezaki ,  Lian-Sheng Pan ,  Seiji Taniike

IPC: C03B20/00

CPC classification number: C30B35/00 ,  C03C3/06 ,  C03C15/00 ,  C03C2201/02 ,  C03C2203/52

Abstract: A silica glass member for semiconductor in which each concentration of Fe, Cu, Cr and Ni is 5 ppb or less and the concentration of an OH group is 30 ppm or less and which has a viscosity of 1013.0 poise or more at 1200° C. is provided as a silica glass member for semiconductor having high heat-resistance and higher purity.

Abstract translation: Fe，Cu，Cr和Ni的各浓度为5ppb以下，OH基浓度为30ppm以下，粘度为10〜13.0的半导体用硅玻璃构件， 作为半导体用石英玻璃构件，具有高耐热性和高纯度，提供了1200℃以上的波峰或更多。

公开(公告)号：US07063826B2

公开(公告)日：2006-06-20

申请号：US10758395

申请日：2004-01-16

Applicant: Yoshio Katsuro ,  Keiji Yamahara ,  Takashi Yamaguchi ,  Yutaka Mori

Inventor： Yoshio Katsuro ,  Keiji Yamahara ,  Takashi Yamaguchi ,  Yutaka Mori

IPC: C01B33/158 ,  C01B33/18

CPC classification number: C03C1/006 ,  C03B19/01 ,  C03B19/09 ,  C03B19/1065 ,  C03B19/1095 ,  C03B2201/03 ,  C03C3/06 ,  C03C12/00 ,  C03C2201/02 ,  C03C2203/26

Abstract: Subjects for the invention are to obtain a quartz powder having a high purity and high quality and a process for producing the same and to obtain a glass molding formed by melting and molding the powder and extremely reduced in bubble inclusion.The invention provides a quartz powder, preferably a synthetic quartz powder obtained by the sol-gel method, which, upon heating from room temperature to 1,700° C., generates gases in which the amount of CO is 300 nl/g or smaller and the amount of CO2 is 30 nl/g or smaller.

Abstract translation: 本发明的目的是获得具有高纯度和高质量的石英粉及其制造方法，并获得通过熔融和成型粉末形成并且气泡夹杂物极度降低的玻璃模制品。 本发明提供一种石英粉末，优选通过溶胶 - 凝胶法获得的合成石英粉末，其在室温至1700℃加热时产生CO的量为300nl / g或更小的气体， CO 2 2的量为30nl / g以下。

公开(公告)号：US20040250572A1

公开(公告)日：2004-12-16

申请号：US10782935

申请日：2004-02-23

Applicant: Carl Zeiss SMT AG

Inventor： Ralf Lindner ,  Frank Stietz ,  Udo Nothelfer ,  Eric Eva

IPC: C03B019/06

CPC classification number: C03C3/06 ,  C03B19/1423 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2207/36 ,  C03C2201/02 ,  C03C2203/40 ,  Y02P40/57

Abstract: A method for producing a quartz glass material with high resistance to radiation-induced density modifications when exposed to ultraviolet radiation at about 193 nm and energy densities of the order of the working energy densities of optical systems for microlithography, in which the peroxy defect level in the quartz glass material is minimized. In this way the creation of closely neighbored hydroxyl groups can be inhibited, which have been identified as an essential cause for radiation induced density reduction of the quartz glass material.

Abstract translation: 一种用于制造在暴露于约193nm的紫外线辐射下具有高耐辐射诱导密度变化的石英玻璃材料的方法，以及用于微光刻的光学系统的工作能量密度级的能量密度，其中过氧缺陷水平 石英玻璃材料最小化。 以这种方式，可以抑制紧密相邻的羟基的产生，这已被认为是石英玻璃材料的辐射诱导密度降低的重要原因。

公开(公告)号：US20040161375A1

公开(公告)日：2004-08-19

申请号：US10758395

申请日：2004-01-16

Applicant: MITSUBISHI CHEMICAL CORPORATION

Inventor： Yoshio Katsuro ,  Keiji Yamahara ,  Takashi Yamaguchi ,  Yutaka Mori

IPC: C03C003/06 ,  C01B033/12

CPC classification number: C03C1/006 ,  C03B19/01 ,  C03B19/09 ,  C03B19/1065 ,  C03B19/1095 ,  C03B2201/03 ,  C03C3/06 ,  C03C12/00 ,  C03C2201/02 ,  C03C2203/26

Abstract: Subjects for the invention are to obtain a quartz powder having a high purity and high quality and a process for producing the same and to obtain a glass molding formed by melting and molding the powder and extremely reduced in bubble inclusion. The invention provides a quartz powder, preferably a synthetic quartz powder obtained by the sol-gel method, which, upon heating from room temperature to 1,700null C., generates gases in which the amount of CO is 300 nl/g or smaller and the amount of CO2 is 30 nl/g or smaller.

Abstract translation: 本发明的目的是获得具有高纯度和高质量的石英粉及其制造方法，并获得通过熔融和成型粉末形成并且气泡夹杂物极度降低的玻璃模制品。 本发明提供一种石英粉末，优选通过溶胶 - 凝胶法获得的合成石英粉末，其在室温至1700℃加热时产生CO的量为300nl / g或更小的气体， CO 2的量为30nl / g以下。

公开(公告)号：US20030101748A1

公开(公告)日：2003-06-05

申请号：US10300739

申请日：2002-11-21

Applicant: TOSHIBA CERAMICS CO., LTD.

Inventor： Masanobu Ezaki ,  Lian-Sheng Pan ,  Seiji Taniike

IPC: C03B019/06

CPC classification number: C30B35/00 ,  C03C3/06 ,  C03C15/00 ,  C03C2201/02 ,  C03C2203/52

Abstract: A silica glass member for semiconductor in which each concentration of Fe, Cu, Cr and Ni is 5 ppb or less and the concentration of an OH group is 30 ppm or less and which has a viscosity of 1013.0 poise or more at 1200null C. is provided as a silica glass member for semiconductor having high heat-resistance and higher purity.

Abstract translation: Fe，Cu，Cr和Ni的各浓度为5ppb以下，OH基浓度为30ppm以下，在1200℃下的粘度为1013.0泊以上的半导体用硅玻璃构件。 被提供为具有高耐热性和高纯度的半导体用石英玻璃构件。

公开(公告)号：US20020157418A1

公开(公告)日：2002-10-31

申请号：US10101437

申请日：2002-03-18

Inventor： Rahul Ganguli ,  Steven G. Colbern ,  Matthew S. Gleason

IPC: C03B008/02

CPC classification number: C03B19/12 ,  C03C1/006 ,  C03C2201/02 ,  C03C2203/22 ,  C03C2203/27 ,  Y02P40/57

Abstract: This invention resides in a process for making silica articles having few or no visible bubbles by sintering silica gels derived from a sol-gel process. The process incorporates control of pH during hydroxylation and gelation, as well as chlorination at temperatures previously considered unsuitable. The process optionally incorporates addition of dispersant to the silica solution.

Abstract translation: 本发明在于通过烧结衍生自溶胶 - 凝胶法的二氧化硅凝胶来制造具有很少或没有可见气泡的二氧化硅制品的方法。 该过程包括在羟基化和凝胶化期间pH的控制，以及先前认为不合适的温度下的氯化。 该方法任选地将分散剂加入到二氧化硅溶液中。

公开(公告)号：US20020036188A1

公开(公告)日：2002-03-28

申请号：US09964987

申请日：2001-09-26

Inventor： Douglas C. Allan ,  Nicholas F. Borrelli ,  William R. Powell ,  Thomas P. Seward III ,  Charlene M. Smith

IPC: G05G017/00 ,  C03B023/02 ,  B23K026/00

CPC classification number: G03F7/70958 ,  C03B19/06 ,  C03B19/066 ,  C03B19/1065 ,  C03B19/1453 ,  C03B20/00 ,  C03B2207/32 ,  C03C1/006 ,  C03C3/06 ,  C03C23/0025 ,  C03C2201/02 ,  C03C2203/50 ,  G03F7/70058 ,  G03F7/70216 ,  Y10S65/13

Abstract: The invention relates to fused silica having low compaction under high energy irradiation, particularly adaptable for use in photolithography applications.

Abstract translation: 本发明涉及在高能量照射下具有低压实性的熔融二氧化硅，特别适用于光刻应用。

公开(公告)号：US5977000A

公开(公告)日：1999-11-02

申请号：US977887

申请日：1997-11-25

Applicant: Tatsuhiro Sato ,  Akira Fujinoki ,  Kyoichi Inaki ,  Nobumasa Yoshida ,  Tohru Yokota

Inventor： Tatsuhiro Sato ,  Akira Fujinoki ,  Kyoichi Inaki ,  Nobumasa Yoshida ,  Tohru Yokota

IPC: C03B5/02 ,  C03B5/08 ,  C03B19/09 ,  C03B20/00 ,  C03C3/06 ,  C03C4/08 ,  C03C11/00

CPC classification number: C03B5/08 ,  C03B19/09 ,  C03B20/00 ,  C03B5/021 ,  C03C3/06 ,  C03C2201/02 ,  C03C2201/80 ,  Y10S501/904 ,  Y10S501/905 ,  Y10T428/249969

Abstract: Opaque silica glass having a density of 2.0 to 2.18 g/cm.sup.3, sodium and potassium elements concentrations in the silica glass of each 0.5 ppm or less and an OH group concentration of 30 ppm or less, and containing bubbles which are independent bubbles having the following physical values: a bubble diameter of 300 .mu.m or less, and a bubble density of 100,000 to 1,000,000 bubbles/cm.sup.3, and a production process for opaque silica glass, including: filling quartz raw material grain having a particle size of 10 to 350 .mu.m in a heat resistant mold, heating it in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50 to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-raising speed not exceeding 50.degree. C./minute, then, slowly heating it up to a temperature higher by 10 to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C./minute or less, and cooling after maintaining at the above temperature.

Abstract translation: 密度为2.0〜2.18g / cm 3的不透明二氧化硅玻璃，二氧化硅玻璃中的钠和钾元素浓度为0.5ppm以下，OH基浓度为30ppm以下，并且含有具有以下的独立气泡的气泡 物理值：气泡直径为300μm以下，气泡密度为100,000〜1,000,000个气泡/ cm 3，以及不透明石英玻璃的制造方法，其特征在于，填充粒径为10〜350μm的石英原料粒子 在耐热模具中，将其在非氧化性气氛中从室温加热到低于50-150℃的温度，而不是以不升温速度将上述原料颗粒熔化的温度 超过50℃/分钟，然后缓慢加热至高于10℃至80℃的温度，高于石英原料颗粒以10℃/分钟或更低的速度熔化的温度， 并保持冷却 在上述温度下。

公开(公告)号：US5736206A

公开(公告)日：1998-04-07

申请号：US640759

申请日：1996-05-07

Applicant: Wolfgang Englisch ,  Stephan Moritz ,  Dietmar Hellmann

Inventor： Wolfgang Englisch ,  Stephan Moritz ,  Dietmar Hellmann

IPC: C03B20/00 ,  B22C9/12 ,  B28B1/26 ,  C03B19/06 ,  C03C3/06 ,  C03C11/00 ,  C03C17/02 ,  C04B33/28 ,  C04B35/14 ,  C30B35/00 ,  G01J1/42 ,  B01J3/00 ,  H01L21/02

CPC classification number: C03C17/02 ,  B22C9/12 ,  C03B19/06 ,  C03B19/066 ,  C03B20/00 ,  C03C11/00 ,  C03C3/06 ,  C30B35/002 ,  G01J1/429 ,  C03B2201/23 ,  C03C2201/02 ,  C03C2201/80 ,  C03C2203/52 ,  Y10T428/131 ,  Y10T428/1317

Abstract: Molded bodies of quartz glass have at least one surface area of transparent quartz glass, the exposed surfaces of which are smooth and which have a surface microroughness of less than 8 .mu.m. The base material has a chemical purity of at least 99.9% and a cristobalite content of no more than 1%; is gas-impermeable and opaque; and contains pores. At a wall thickness of 1 mm, the base material has a nearly uniform direct spectral transmission of less than 10% in the wavelength range of .lambda.=190-2,650 nm; and which has a density of at least 2.215 g/cm.sup.3. The transparent surface area is formed from base material by heating it to a temperature above 1,650.degree. C. The thickness of the transparent layer is at least 0.5 mm, and its direct spectral transmission in the wavelength range of .lambda.=6001-2,650 nm is at least 60% for a layer thickness of 1 mm.

Abstract translation: PCT No.PCT / EP94 / 03722 Sec。 371日期：1996年5月7日 102（e）日期1996年5月7日PCT 1994年11月10日PCT PCT。 公开号WO95 / 13248 日期1995年5月18日石英玻璃体的模体具有透明石英玻璃的至少一个表面积，其露出表面光滑，表面微粗糙度小于8μm。 基材的化学纯度为99.9％以上，方石方含量不超过1％。 是不透气和不透明的; 并含有毛孔。 在壁厚为1mm的情况下，基材在λ= 190-2,650nm的波长范围内具有小于10％的几乎均匀的直接光谱透射; 并且其密度为至少2.215g / cm 3。 透明表面积由基材通过加热至1650℃以上而形成。透明层的厚度至少为0.5mm，其在λ= 6001-2,650nm的波长范围内的直接光谱透过率为 对于层厚为1mm，最少为60％。