Abstract:
An optical analysis or processing system for use, for example, in the analysis of microscopic spots of material by their effect on a very fine polarized beam of light (e.g., FPIA). For multiple "spot" analysis the spot samples are disposed on a substrate in predetermined relation with an optical pattern, bars, chevrons, etc. The substrate is mounted in the path of the fixed and focused beam with three degrees of freedom of movement. A video camera records the optical pattern very accurately and controls the substrate mounting to position a selected sample spot at the beam focus. Multiple and rapid sample analysis can thus be performed.
Abstract:
A defect inspecting apparatus for determining the presence of a defect element adhering to either of the front and back surfaces of a thin film-like object to be inspected (the object having a light-transmitting property) applies two light beams of different wavelengths to a surface of the object and varies the incident angle of the light beams. A first photoelectric detector receives light of the two light beams reflected by or transmitted by the object, and a second photoelectric detector receives light of the two light beams scattered by the defect element. A discriminator determines the surface of the object to which the defect element adheres based on detection outputs of the photoelectric detectors.
Abstract:
An apparatus and a method for inspecting semiconductor devices, where a focused laser beam scans the semiconductor device, and the reflected beam thereof indicating height information of the reflection positions on the semiconductor device is detected for producing detected signals. The detected signals are compared with predetermined acceptance levels of height and distance.
Abstract:
A system for determining surface profiles of specimens such as semiconductor wafers includes a drive for mounting the wafer for oscillatory movement along a line and an optical imaging system overlying the wafer for focusing a beam on a small sport on the wafer and including a photodetector for detecting the reflected sport from the wafer. The spot is scanned along the line on the wafer while the focal depth of the imaging system is progressively changed while the photodetector and connected digital circuitry generate a plurality of spaced output signals for each scan along the line so that data comprised of a series of spaced signals are provided at a plurality of focus levels extending through the surface profile of the wafer. Computer means are provided for analyzing the data and providing a graphical output of the surface profile.
Abstract:
An apparatus for detecting defects in a laser mirror by using a laser beam in order to detect any possible changes in reflectivity over the surface of the mirror. A laser beam is split by a beam splitter into one portion for scanning the mirror to be inspected and which is reflected therefrom to produce a reflection signal, the remaining portion of the beam providing a reference signal. A computer receives both signals and on the basis of comparison thereof determines the condition of the mirror because there will be incorrect reflection of the laser beam from any region of the mirror which is defective.
Abstract:
This defect inspection device for emitting illumination light onto a moving and rotating sample and inspecting for sample defects by scanning the sample in a spiral shape or concentric circle shapes comprises: an illumination and detection unit comprising an emission optical system and a detection optical system; a rotary stage for rotating the sample; a rectilinear stage for rectilinearly moving the rotary stage; and a controller for controlling the illumination and detection unit, rotary stage, and rectilinear stage. On the linear path of the rectilinear stage are a scanning start position where illumination light is emitted onto the sample and scanning is started and a sample delivery position where movement of the sample to the scanning start position starts. When the sample arrives at the scanning start position, the defect inspection device starts emitting the illumination light onto the sample without waiting for the rotation speed of the rotary stage to rise to a specified rotation speed for scanning and raises the rotation speed of the rotary stage to the specified rotation speed while scanning the sample.
Abstract:
A method of contactless, non-destructive contamination-free 2-dimensional mapping of the cutoff wavelength (or bandgap) and the minority carrier lifetime, which is measured through photo-excited excess free carrier absorption decay method, in semiconductor thin film materials and wafers, including typical semiconductor wafers such as Si, Ge, GaAs, and GaSb as well as narrow gap semiconductors such as InSb, type II superlattices (T2SLs) and HgCdTe, at variable temperatures from room temperature down to 2K, utilizing a three-chamber arrangement in which the external chamber and cold chamber are held at ultra-high vacuum and the innermost (sample) chamber is held at cryogenic temperature to cool wafer or thin film samples through gaseous thermal transfer media to cryogenic temperatures down to 1.9 K under pumping. To achieve full-range wafer mapping, the measurement and sensing components for transmitted and reflected light, including infrared probing beam sources, such as long-wavelength infrared lasers, fast HgCdTe detectors, or detector liner or 2-dimensional arrays mounted in liquid nitrogen dewars or thermoelectric (TE)-cooled detector housings, excitation lasers with a wavelength shorter than the bandgap of the sample to be measured, a broadband infrared source with focusing mirror, light grating with mirror and its other accessories including the motion execution and control components, and a linear LWIR array in a liquid nitrogen Dewar, are positioned outside all three chambers and can be moved through a carriage mounting to create the radial component of the mapping motion domain. The rotation of the sample holder is controlled through a drive gear located inside the sample chamber and creates the angular component of the mapping motion domain.
Abstract:
Surface sensing methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy are disclosed herein. The methods include exposing a sampled location of the scanned surface to a visible light beam and exposing the sampled location to a tunable infrared beam such that the tunable infrared beam is at least partially coincident with the visible light beam. The methods also include varying a frequency of the tunable infrared beam an inducing optical resonance within an imaged structure that extends at least partially within the sampled location. The methods further include receiving at least a portion of an emitted light beam from the sampled location and scanning the visible light beam and the runnable infrared beam across the scanned portion of the scanned surface. The methods also include generating an image of the scanned portion of the scanned surface based upon the receiving and the scanning.
Abstract:
Surface sensing methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy are disclosed herein. The methods include exposing a sampled location of the scanned surface to a visible light beam and exposing the sampled location to a tunable infrared beam such that the tunable infrared beam is at least partially coincident with the visible light beam. The methods also include varying a frequency of the tunable infrared beam an inducing optical resonance within an imaged structure that extends at least partially within the sampled location. The methods further include receiving at least a portion of an emitted light beam from the sampled location and scanning the visible light beam and the runnable infrared beam across the scanned portion of the scanned surface. The methods also include generating an image of the scanned portion of the scanned surface based upon the receiving and the scanning.
Abstract:
Surface sensing methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy are disclosed herein. The methods include exposing a sampled location of the scanned surface to a visible light beam and exposing the sampled location to a tunable infrared beam such that the tunable infrared beam is at least partially coincident with the visible light beam. The methods also include varying a frequency of the tunable infrared beam an inducing optical resonance within an imaged structure that extends at least partially within the sampled location. The methods further include receiving at least a portion of an emitted light beam from the sampled location and scanning the visible light beam and the runnable infrared beam across the scanned portion of the scanned surface. The methods also include generating an image of the scanned portion of the scanned surface based upon the receiving and the scanning.