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    Field emitter cell and array with vertical thin-film-edge emitter
    213.
    发明授权
    Field emitter cell and array with vertical thin-film-edge emitter 失效

    公开(公告)号：US06595820B2

    公开(公告)日：2003-07-22

    申请号：US09883458

    申请日：2001-06-13

    Applicant: David S. Y. Hsu ,  Henry F. Gray

    Inventor： David S. Y. Hsu ,  Henry F. Gray

    IPC: H01J902

    CPC classification number: H01J1/3046 ,  B82Y10/00 ,  B82Y30/00 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

    Abstract: A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.

    Image display and a manufacturing method of the same
    214.
    发明授权
    Image display and a manufacturing method of the same 有权
    图像显示及其制造方法

    公开(公告)号：US06538391B1

    公开(公告)日：2003-03-25

    申请号：US10030982

    申请日：2002-01-16

    Applicant: Mutsumi Suzuki ,  Masakazu Sagawa ,  Toshiaki Kusunoki

    Inventor： Mutsumi Suzuki ,  Masakazu Sagawa ,  Toshiaki Kusunoki

    IPC: G09G310

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

    Abstract: The present invention provides an image display capable of enhancing a production yield. The image display comprises a display device including a first plate which has a plurality of electron-emitter elements each having a structure comprised of a base electrode, an insulating layer and a top electrode stacked on one another in this order, the electron-emitter element emitting electrons from the surface of the top electrode when a voltage of positive polarity is applied to the top electrode; a plurality of first electrodes for respectively applying driving voltages to the base electrodes of the electron-emitter elements lying in a row (or column) direction; and a plurality of second electrodes for respectively applying driving voltages to the top electrodes of the electron-emitter elements lying in the column (or row) direction, a frame component, and a second plate having phosphors, wherein a space surrounded by the first plate, the frame component and the second plate is brought into vacuum. In the display apparatus, the at least one electron-emitter element includes the base electrode and the top electrode, at least one of which is connected to the first electrode or the second electrode through a resistor element.

    Abstract translation: 本发明提供能够提高产量的图像显示装置。 图像显示器包括显示装置，该显示装置包括具有多个电子发射元件的第一板，每个电子发射元件具有依次层叠的基极，绝缘层和顶电极的结构，电子发射元件 当向顶部电极施加正极性的电压时，从顶部电极的表面发射电子; 多个第一电极，用于分别向位于行（或列）方向的电子发射体元件的基极施加驱动电压; 以及多个第二电极，用于分别向位于列（或行）方向的电子发射体元件的顶电极，框架部件和具有荧光体的第二板分别施加驱动电压，其中由第一板 ，使框架部件和第二板件成为真空。 在显示装置中，至少一个电子发射体元件包括基极和顶电极，其中至少一个通过电阻元件连接到第一电极或第二电极。

    Field effect transistor fabrication methods, field emission device fabrication methods, and field emission device operational methods
    216.
    发明申请
    Field effect transistor fabrication methods, field emission device fabrication methods, and field emission device operational methods 有权
    场效应晶体管制造方法，场发射器件制造方法和场致发射器件的操作方法

    公开(公告)号：US20020098630A1

    公开(公告)日：2002-07-25

    申请号：US10072415

    申请日：2002-02-05

    Inventor： Ji Ung Lee ,  John Lee ,  Benham Moradi

    IPC: H01L021/00 ,  H01L021/84 ,  H01L021/338 ,  H01J001/02 ,  H01J001/05 ,  H01J001/38

    CPC classification number: H01L29/78618 ,  H01J9/025 ,  H01J2201/319

    Abstract: The present invention includes field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors. According to one embodiment, a field effect transistor includes a semiconductive layer configured to form a channel region; a pair of spaced conductively doped semiconductive regions in electrical connection with the channel region of the semiconductive layer; a gate intermediate the semiconductive regions; and a gate dielectric layer intermediate the semiconductive layer and the gate, the gate dielectric layer being configured to align the gate with the channel region of the semiconductive layer. In one aspect, chemical-mechanical polishing self-aligns the gate with the channel region. According to another aspect, a field emission device includes a transistor configured to control the emission of electrons from an emitter.

    Abstract translation: 本发明包括场效应晶体管，场发射装置，薄膜​​晶体管和形成场效应晶体管的方法。 根据一个实施例，场效应晶体管包括被配置为形成沟道区的半导体层; 一对间隔导电掺杂的半导体区域，与半导体层的沟道区域电连接; 半导体区域中间的栅极; 以及在所述半导体层和所述栅极之间的栅极电介质层，所述栅极电介质层被配置为使所述栅极与所述半导体层的沟道区域对准。 在一个方面，化学机械抛光使栅极与沟道区域自对准。 根据另一方面，场发射器件包括被配置为控制来自发射极的电子的发射的晶体管。

    Low gate current field emitter cell and array with vertical thin-film-edge emitter
    217.
    发明申请
    Low gate current field emitter cell and array with vertical thin-film-edge emitter 失效

    公开(公告)号：US20020055319A1

    公开(公告)日：2002-05-09

    申请号：US10012612

    申请日：2001-12-12

    Inventor： David S.Y. Hsu

    IPC: H01J009/24

    CPC classification number: B82Y10/00 ,  B82Y30/00 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

    Abstract: A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

    Controlling pixel brightness in a field emission display using circuits for sampling and discharging
    218.
    发明授权
    Controlling pixel brightness in a field emission display using circuits for sampling and discharging 失效
    使用采样和放电电路控制场发射显示器中的像素亮度

    公开(公告)号：US06380913B1

    公开(公告)日：2002-04-30

    申请号：US09189085

    申请日：1998-11-09

    Applicant: Glen E. Hush ,  Tyler A. Lowrey

    Inventor： Glen E. Hush ,  Tyler A. Lowrey

    IPC: G09G322

    CPC classification number: G09G3/22 ,  G09G3/2011 ,  G09G3/2014 ,  G09G2300/08 ,  G09G2310/0248 ,  G09G2310/0259 ,  G09G2310/066 ,  G09G2320/0606 ,  G09G2320/0626 ,  G09G2320/066 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A flat panel display, such as a Field Emission Display (“FED”), is disclosed having a current control circuit. Input into the display, initially, is an analog signal having an amplitude. In one embodiment, the current control circuit includes a converter for converting the analog input signal to a sawtooth signal having a height and width. Then, the level of the sawtooth signal is compared to a voltage level to establish a pulse width of an emitter current. The emitter current is thus controlled by a pulse width modulation approach. In another embodiment, the current control circuit traps a column voltage on a parasitic capacitance. The trapped voltage then controls the gate of a transistor to control current flow from the emitter set to ground.

    Abstract translation: 公开了一种具有电流控制电路的平板显示器，例如场发射显示器（“FED”）。 最初输入到显示器是具有振幅的模拟信号。 在一个实施例中，电流控制电路包括用于将模拟输入信号转换成具有高度和宽度的锯齿波信号的转换器。 然后，将锯齿波信号的电平与电压电平进行比较，以建立发射极电流的脉冲宽度。 因此，通过脉冲宽度调制方法来控制发射极电流。 在另一个实施例中，电流控制电路捕获寄生电容上的列电压。 捕获的电压然后控制晶体管的栅极以控制从发射极组到地的电流。

    Fabrication and structure of electron emitters coated with material such as carbon
    219.
    发明申请
    Fabrication and structure of electron emitters coated with material such as carbon 审中-公开
    用碳材料涂覆的电子发射体的制造和结构

    公开(公告)号：US20020033663A1

    公开(公告)日：2002-03-21

    申请号：US09965197

    申请日：2001-09-26

    Inventor： Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

    IPC: H01J001/62

    CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

    Abstract translation: 适用于平板显示器的阴极结构设置有涂覆的发射器。 发射体由能够生长到高纵横比的材料（通常为镍）形成。 然后，这些发射体涂覆有含碳材料，以改善化学稳定性并降低功函数。 一个涂覆工艺是DC等离子体沉积工艺，其中将乙炔泵送通过DC等离子体反应器以产生用于涂覆阴极结构的DC等离子体。 另一种涂覆方法是将原始碳基材料电沉积到发射体的表面上，随后将原始的碳基材料还原成含碳材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。

    Fabrication of electron emitters coated with material such as carbon
    220.
    发明申请
    Fabrication of electron emitters coated with material such as carbon 有权
    制造涂覆有碳材料的电子发射体

    公开(公告)号：US20010000163A1

    公开(公告)日：2001-04-05

    申请号：US09727023

    申请日：2000-11-29

    Inventor： Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

    IPC: H01J009/04 ,  H01J009/12

    CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

    Abstract: A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

    Abstract translation: 适用于平板显示器的阴极结构设置有涂覆的发射器。 发射体由能够生长到高纵横比的材料（通常为镍）形成。 然后，这些发射体涂覆有含碳材料，以改善化学稳定性并降低功函数。 一个涂覆工艺是DC等离子体沉积工艺，其中将乙炔泵送通过DC等离子体反应器以产生用于涂覆阴极结构的DC等离子体。 另一种涂覆方法是将原始碳基材料电沉积到发射体的表面上，随后将原始的碳基材料还原成含碳材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。

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