公开(公告)号：US11784567B2

公开(公告)日：2023-10-10

申请号：US17571741

申请日：2022-01-10

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Sebastien Ortet

IPC: H02M3/158 ,  H02M3/157

CPC classification number: H02M3/158 ,  H02M3/157

Abstract: In an embodiment, a device includes a switching power supply configured to have a first operating mode synchronized by a first clock signal generated by a clock generator a second asynchronous operating mode. The clock generator is configured such that the first clock signal becomes equal, upon transition from the second operating mode to the first operating mode, to the signal having the closest rising edge of a second clock signal and a third clock signal complementary to the second clock signal.

公开(公告)号：US20230318589A1

公开(公告)日：2023-10-05

申请号：US18127397

申请日：2023-03-28

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics (Rousset) SAS

Inventor： Giulio ZOPPI ,  Vincent Pascal ONDE ,  Giuseppe ROMANO

IPC: H03K5/1254 ,  G01D5/347 ,  H03K3/013

CPC classification number: H03K5/1254 ,  G01D5/3473 ,  H03K3/013

Abstract: A first input node receives a first input signal and a second input node receives a second input signal. The first and second input signals are in phase quadrature. An edge detector circuit senses the first input signal and produces a pulsed signal indicative of edges detected in the first input signal. A pulse skip and reset circuit senses the pulsed signal and the second input signal, and produces a reset signal indicative of pulses detected in the pulsed signal while the second input signal is de-asserted. A sampling circuit senses the second input signal and the reset signal, and produces an output signal that is deasserted in response to assertion of the second input signal and is asserted in response to a pulse being detected in the reset signal.

公开(公告)号：US20230317637A1

公开(公告)日：2023-10-05

申请号：US18206923

申请日：2023-06-07

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal FORNARA ,  Fabrice MARINET

IPC: H01L23/00 ,  H01L29/788 ,  G06F21/75 ,  G06F21/79 ,  H01L23/522 ,  H10B41/35

CPC classification number: H01L23/573 ,  H01L29/7883 ,  H01L23/576 ,  G06F21/75 ,  G06F21/79 ,  H01L23/5223 ,  H10B41/35 ,  G06F21/87

Abstract: An integrated circuit memory includes a state transistor having a floating gate which stores a respective data value. A device for protecting the data stored in the memory includes a capacitive structure having a first electrically-conducting body coupled to the floating gate of the state transistor, a dielectric body, and a second electrically-conducting body coupled to a ground terminal. The dielectric body is configured, if an aqueous solution is brought into contact with the dielectric body, to electrically couple the floating gate and the ground terminal so as to modify the charge on the floating gate and to lose the corresponding data. Otherwise, the dielectric body is configured to electrically isolate the floating gate and the ground terminal.

公开(公告)号：US20230300919A1

公开(公告)日：2023-09-21

申请号：US18119626

申请日：2023-03-09

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Philippe ALARY

IPC: H04W76/14 ,  H04L1/18

CPC classification number: H04W76/14 ,  H04L1/18

Abstract: A first near-field communication device is remotely powered by a second near-field communication device. The first near-field communication device receives from the second near-field communication device a frame indicating a failure of a data reception by the second near-field communication device. In response, at least one transmission parameter of the first near-field communication device is modified prior to another attempt of transmission of the data.

公开(公告)号：US11764731B2

公开(公告)日：2023-09-19

申请号：US18059812

申请日：2022-11-29

Applicant: STMicroelectronics (Alps) SAS ,  STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Rousset) SAS ,  STMicroelectronics S.r.l.

Inventor： Benoit Marchand ,  Hamilton Emmanuel Querino De Carvalho ,  Achraf Dhayni ,  Daniele Mangano

IPC: H04B1/04 ,  H03F3/24 ,  H03B5/36 ,  H03L1/02 ,  H03L7/099 ,  G06F1/10

CPC classification number: H03B5/36 ,  G06F1/10 ,  H03F3/245 ,  H04B1/0475 ,  H03B2200/004 ,  H03F2200/451 ,  H04B2001/0408

Abstract: The present disclosure relates to an electronic device comprising a first capacitor and a quartz crystal coupled in series between a first node and a second node; an inverter coupled between the first and second nodes; a first variable capacitor coupled between the first node and a third node; and a second variable capacitor coupled between the second node and the third node.

公开(公告)号：US20230282286A1

公开(公告)日：2023-09-07

申请号：US18173472

申请日：2023-02-23

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics (Rousset) SAS

Inventor： Francesco La Rosa ,  Marco Bildgen

IPC: G11C16/22 ,  G11C16/16 ,  G06F21/78

CPC classification number: G11C16/22 ,  G11C16/16 ,  G06F21/78 ,  H10B41/30

Abstract: An integrated circuit comprises a memory device including a memory plane having non-volatile memory cells and being non-observable in read mode from outside the memory device, a controller, internal to the memory device, configured to detect the memorized content of the memory plane, and when the memorized content contains locking content, automatically lock any access to the memory plane from outside the memory device, the integrated circuit then being in a locked status, and authorize delivery outside the memory device of at least one sensitive datum stored in the memory plane.

公开(公告)号：US11722872B2

公开(公告)日：2023-08-08

申请号：US17478399

申请日：2021-09-17

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Alexandre Tramoni

IPC: H04W4/80 ,  H02J50/80 ,  H02J50/10 ,  H04B5/00

CPC classification number: H04W4/80 ,  H02J50/10 ,  H02J50/80 ,  H04B5/0025

Abstract: A method includes detecting, by a first near-field communication device, the presence of a second near-field communication device. In a case where the second device is intended to be charged in near-field by the first device, the method further includes adjusting, by a control device, an impedance of an impedance matching circuit forming part of a near-field communication circuit of the first device.

公开(公告)号：US11715093B2

公开(公告)日：2023-08-01

申请号：US17127269

申请日：2020-12-18

Applicant: STMicroelectronics (Rousset) SAS ,  Proton World International N.V.

Inventor： Olivier Van Nieuwenhuyze ,  Jean-Marc Grimaud

IPC: H04L41/0803 ,  G06Q20/32 ,  G06K7/10 ,  H04L69/329

CPC classification number: G06Q20/3278 ,  G06K7/10297 ,  H04L41/0803 ,  H04L69/329

Abstract: A method of configuring a contactless communication device is provided. The contactless communication device includes integrated circuits hosting at least two applications compatible with the same communication protocols or compatible with the same communication protocol and using different communication parameters and a contactless communication circuit. The method includes detecting, by the contactless communication circuit, an interruption of a transaction initiated by a proximity coupling reader.

公开(公告)号：US20230223448A1

公开(公告)日：2023-07-13

申请号：US18094023

申请日：2023-01-06

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal FORNARA ,  Christian RIVERO ,  Franck JULIEN

IPC: H01L29/40 ,  H01L29/45 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L29/401 ,  H01L29/456 ,  H01L21/76843 ,  H01L21/76858 ,  H01L23/53266 ,  H01L23/5226

Abstract: A method of manufacturing a radio frequency switch includes the steps of: forming a first silicide layer on a second conductive or semiconductor layer; forming a third insulating layer on the first layer; forming a cavity in the third insulating layer reaching the first silicide layer; forming a fourth metal layer in the cavity in contact with the first silicide layer; performing a non-oxidizing annealing; and filling the cavity with a conductive material. The first silicide layer is provided on one or more of the gate, source, and drain of a transistor forming the radio frequency switch.

公开(公告)号：US20230189002A1

公开(公告)日：2023-06-15

申请号：US18065514

申请日：2022-12-13

Applicant: Proton World International N.V. ,  STMicroelectronics (Rousset) SAS

Inventor： Olivier Van Nieuwenhuyze ,  Alexandre Charles

IPC: H04W12/47 ,  H04W12/06 ,  H04W12/033

CPC classification number: H04W12/47 ,  H04W12/06 ,  H04W12/033

Abstract: In an embodiment a method for implementing a NFC transaction between a mobile terminal and a distant module is disclosed. The terminal includes a processor hosting an application configured to establish the NFC transaction, a near-field communication module, and a secure element distinct from the processor. The method includes storing, by the near-field communication module in the secure element, first data from the distant module, sending, by the near-field communication module, second data to the application notifying it that the first data have been stored in the secure element and requesting, by the application, the first data from the secure element.