Abstract:
Gated electron emitters are fabricated by processes in which charged particles are passed through a track layer (24, 48, or 144) to form charged-particle tracks (26.sub.1, 50.sub.1, or 146.sub.1). The track layer is etched along the tracks to create open spaces (28.sub.1, 52.sub.1, or 148.sub.1). Electron-emissive elements (30 or 142D) can then be formed at locations respectively centered on the open spaces after which a patterned gate layer (34B, 40B, or 158C) is provided. Alternatively, the open spaces in the track layer can be employed to etch corresponding apertures (54.sub.1) through an underlying non-insulating layer (46) which typically serves as the gate layer. An etch is performed through the apertures to form dielectric open spaces (56.sub.1, 96.sub.1, or 114.sub.1) in an insulating layer (24) that lies below the non-insulating layer. Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) can subsequently be provided, typically in the dielectric open spaces.
Abstract:
A gated area field emitter is fabricated according to a process in which charged-particle tracks are utilized in creating small electron-emissive elements self-aligned to corresponding gate openings in the gate electrode. The electron-emissive elements can have various shapes, including (a) a pedestal, typically a filament, having a pointed tip, (b) a cone, and (c) a combination of a pedestal and an overlying cone whose base diameter is greater than the pedestal's diameter. Each electron-emissive element can be formed as a highly resistive portion and an overlying electron-emissive portion.
Abstract:
A gated electron-emitting device contains a multiplicity of electron-emissive elements, each formed with a pedestal (98) and an overlying cone (94.sub.1). In each electron-emissive element, the base diameter of the cone is greater than the element, the base diameter of the cone is greater than the diameter of the pedestal. With the pedestal being electrically conductive, the cone may be electrically resistive. Alternatively, each electron-emissive element can be an elongated element (30B) that reaches a maximum diameter at a point between, and spaced apart from, both ends of the element.
Abstract:
A method for fabricating high aspect ratio spacers for a field emission display is described. An array of field emission microtips is formed over a substrate. A layer of lithographic material is formed over the array of field emission microtips. Openings are formed in the layer of lithographic material. The openings may be formed by a plasma etch with oxygen, or by x-ray lithography. A non-outgassing material is formed over the surface of the layer of lithographic material, including in the openings. The openings are filled with a spacer material, the spacer material being a conductive material, an insulator, or, preferably, a combination thereof. Lastly, the layer of lithographic material and the non-outgassing material are removed.
Abstract:
Methods are available for making, and resultant structures of, a field emission display with soft luminescence and a comfortable image for a viewer of the display. The field emission display is formed with a baseplate and an opposing face plate. Field emission microtips are formed in openings in a conductive and insulating layer on the baseplate. An anode is formed on either the faceplate, or on the conductive layer surrounding each opening. Phosphorescent material is formed over the anode. A blocking layer is formed between the phosphor and the faceplate, such that during operation of the display direct light emission from the phosphor is blocked, resulting in indirect phosphorescence and a more comfortable display image. An optional reflective layer may be added over the conductive layer to increase phosphorescence.
Abstract:
Cathodoluminescent display apparatus employing an electron source including a plurality of diamond crystallites. Image display apparatus employing an array of picture elements, each picture element having associated therewith an electron source including electron emitting diamond crystallites, is realized as a preferred embodiment.
Abstract:
A depletion mode electron emission apparatus with an electron source including a plurality of preferentially oriented diamond crystallites. Applications employing pluralities of electron sources including preferentially oriented diamond crystallites include image display devices.
Abstract:
A field emission cathode comprises a glass substrate in combination with an insulating layer sandwiched between two conducting layers functioning as electrodes. Cavities extending through one of the electrodes and the insulating layer to the surface of the other electrode contain highly compacted and porous electron emissive layers which provide high electrical resistance between said electrodes and are diffused with metallic gold to form needle-shaped metal deposits on the surface as well as within the emissive layers. Such cathodes are used in image converters and image display tubes.
Abstract:
This invention relates to a method for the fabrication of electrical and electronic devices using a photoresist deposited in pre-existing through holes in a device structure and a thick film paste, and to the devices made by such method. The method allows thick film paste deposits in the corners of the holes. This invention also relates to devices made with thick film pastes that are patterned using a diffusion layer made from residual photoresist deposits in a hole.
Abstract:
A field emission cathode plate is disclosed, which includes: a substrate; a cathode layer, disposed on the substrate; a conductive layer with an arc surface or a resistor layer with an opening and resistivity larger than that of the cathode layer, disposed on the cathode layer; and a cambered field emission layer, having an arc surface and disposed on the conductive layer or on the cathode layer in the opening of the resistor layer and covering the resistor layer around the opening. The present invention also provides a method for fabricating the above-mentioned field emission cathode plate. The method can provide field emission cathode plate achieving uniform field emission and does not involve high resolution and cost.