公开(公告)号：US08049138B2

公开(公告)日：2011-11-01

申请号：US10832375

申请日：2004-04-27

Applicant: Yasufumi Yamada ,  Katsumi Midorikawa ,  Hiroshi Kumagai

Inventor： Yasufumi Yamada ,  Katsumi Midorikawa ,  Hiroshi Kumagai

IPC: B23K26/00

CPC classification number: G11B7/125 ,  B23K26/009 ,  B23K26/066 ,  B23K26/18 ,  B29C33/3857 ,  B29C64/129 ,  B81B2203/033 ,  B81B2203/0392 ,  B81C1/00103 ,  B81C99/009 ,  B81C2201/0143 ,  G02B5/1857 ,  G03H2001/0478 ,  G11B7/261 ,  Y10S428/913 ,  Y10T428/12389 ,  Y10T428/12396 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/24942 ,  Y10T428/31623

Abstract: An apparatus for processing a three-dimensional structure having a fine three-dimensional shape and a smooth surface is disclosed in which the three-dimensional structure is usable for an optical device. The process method includes depositing a thin layer for absorption of laser light on a flat substrate; depositing a transparent layer on the thin layer for absorption of laser light; and irradiating a process laser light, passing through the transparent layer; in which pulse injection energy of the process laser light is set to be the same as or smaller than the maximum pulse injection energy capable of exposing a surface of the thin layer in front in the incident direction of the process laser light, and to be set the same as or greater than the minimum pulse injection energy capable of removing the transparent layer in rear in the incident direction of the process laser light.

Abstract translation: 公开了一种用于处理具有微细三维形状和平滑表面的三维结构的装置，其中三维结构可用于光学装置。 该方法包括在平坦基底上沉积用于吸收激光的薄层; 在薄层上沉积透明层以吸收激光; 并照射通过透明层的工艺激光; 其中将工艺激光的脉冲注入能量设定为与能够在工艺激光的入射方向上的前面暴露薄层的表面的最大脉冲注入能量相同或更小，并设定 与能够沿着工艺激光的入射方向去除后方的透明层的最小脉冲注入能量相同或者更大。

公开(公告)号：US07910391B2

公开(公告)日：2011-03-22

申请号：US12204296

申请日：2008-09-04

Applicant: Susan Alie

Inventor： Susan Alie

IPC: H01L21/00

CPC classification number: H01L23/26 ,  B81C1/00285 ,  B81C2201/0143 ,  H01L2224/16 ,  H01L2924/1461 ,  H01L2924/00

Abstract: The present disclosure relates to methods of treating a silicon substrate with an ultra-fast laser to create a getter material for example in a substantially enclosed MEMS package. In an embodiment, the laser treating comprises irradiating the silicon surface with a plurality of laser pulses adding gettering microstructure to the treated surface. Semiconductor based packaged devices, e.g. MEMS, are given as examples hereof.

Abstract translation: 本公开涉及用超快速激光处理硅衬底以产生例如在基本封闭的MEMS封装中的吸气材料的方法。 在一个实施例中，激光处理包括用多个激光脉冲对硅表面照射，以将吸收微结构加到被处理的表面上。 基于半导体的封装器件，例如 MEMS作为示例。

公开(公告)号：US20090321867A1

公开(公告)日：2009-12-31

申请号：US11911085

申请日：2006-04-10

Applicant: Juergen Leib ,  Dietrich Mund

Inventor： Juergen Leib ,  Dietrich Mund

IPC: H01L23/00 ,  H01L21/00 ,  H01L23/12 ,  H05K7/02

CPC classification number: H01L27/14687 ,  B81C1/00333 ,  B81C1/00873 ,  B81C2201/0143 ,  H01L23/057 ,  H01L23/08 ,  H01L23/10 ,  H01L27/14618 ,  H01L27/14632 ,  H01L31/0203 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2924/00

Abstract: The invention relates to a method for production of packaged electronic, in particular optoelectronic, components in a composite wafer, in which the packaging is carried out by fitting microframe structures of a cover substrate composed of glass, and the composite wafer is broken up along trenches which are produced in the cover substrate, and to packaged electronic components which can be produced using this method, comprising a composite of a mount substrate and a cover substrate, with at least one functional element and at least one bonding element, which makes contact with the functional element, being arranged on the mount substrate, with the cover substrate being a microstructured glass which is arranged on the mount substrate, and forms a cavity above the functional element, and with the bonding elements being located outside the cavity.

Abstract translation: 本发明涉及一种用于生产复合晶片中的电子封装，特别是光电子元件的方法，其中通过安装由玻璃构成的覆盖基板的微框架结构来进行封装，并且复合晶片沿着沟槽分解 并且可以使用这种方法制造的包装电子部件，其包括安装基板和盖基板的复合物，至少一个功能元件和至少一个接合元件，其与 所述功能元件布置在所述安装基板上，所述盖基板是布置在所述安装基板上的微结构玻璃，并且在所述功能元件上方形成空腔，并且所述接合元件位于所述空腔外部。

公开(公告)号：US20080252988A1

公开(公告)日：2008-10-16

申请号：US11816804

申请日：2005-02-21

Applicant: Massimo Tormen ,  Alessandro Carpentiero ,  Enzo Mario Di Fabrizio

Inventor： Massimo Tormen ,  Alessandro Carpentiero ,  Enzo Mario Di Fabrizio

IPC: G02B9/00 ,  B29D11/00

CPC classification number: B81C99/009 ,  B81B2207/056 ,  B81C99/0085 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y20/00 ,  G02B3/0012

Abstract: A method is for forming three-dimensional micro- and nanostructures, based on the structuring of a body of material by a mould having an impression area which reproduces the three-dimensional structure in negative form. This method includes providing a mould having a substrate of a material which can undergo isotropic chemical etching, in which the impression area is to be formed. An etching pattern is defined on (in) the substrate, having etching areas having zero-, uni- or bidimensional extension, which can be reached by an etching agent. A process of isotropic chemical etching of the substrate from the etching areas is carried out for a corresponding predetermined time, so as to produce cavities which in combination make up the impression area. The method is advantageously used in the fabrication of sets of microlenses with a convex three-dimensional structure, of the refractive or hybrid refractive/diffractive type, for forming images on different focal planes.

Abstract translation: 一种用于形成三维微结构和纳米结构的方法，其基于通过具有以负形式再现三维结构的印模区域的模具构造材料体。 该方法包括提供具有能够进行各向同性化学蚀刻的材料的基材的模具，其中将形成印模区域。 蚀刻图案被定义在衬底的（在）中，其蚀刻区域具有零，一维或二维延伸，这可由蚀刻剂达到。 从蚀刻区域对基板进行各向同性化学蚀刻的过程进行相应的预定时间，以产生组合构成印模区域的空腔。 该方法有利地用于制造具有折射或混合折射/衍射类型的凸立体结构的微透镜组，用于在不同焦平面上形成图像。

公开(公告)号：US07419915B2

公开(公告)日：2008-09-02

申请号：US11061485

申请日：2005-02-17

Applicant: Margaret H. Abraham ,  Henry Helvajian ,  Siegfried W. Janson

Inventor： Margaret H. Abraham ,  Henry Helvajian ,  Siegfried W. Janson

IPC: H01L21/302

CPC classification number: H01L21/31116 ,  B81C1/00484 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01L21/26533

Abstract: A method using an etchant and a laser for localized precise heating enables precise etching and release of MEMS devices with improved process control while expanding the number of materials used to make MEMS, including silicon-dioxide patterned films buried in and subsequently released from bulk silicon, as a direct write method of release of patterned structures that enables removal of only that material needed to allow the device to perform to be precisely released, after which, the bulk material can be further processed for additional electrical or packaging functions.

Abstract translation: 使用蚀刻剂和激光器进行局部精确加热的方法使得可以通过改进的工艺控制精确地蚀刻和释放MEMS器件，同时扩大用于制造MEMS的材料的数量，包括埋入并随后从体硅释放的二氧化硅图案化膜， 作为图案化结构的释放的直接写入方法，其能够仅去除允许器件执行精确释放所需的材料，之后可以进一步处理散装材料以用于额外的电气或封装功能。

公开(公告)号：US20080142475A1

公开(公告)日：2008-06-19

申请号：US11611633

申请日：2006-12-15

Applicant: Peter V. Loeppert ,  Anthony Minervini ,  Jay Cech ,  Sung B. Lee

Inventor： Peter V. Loeppert ,  Anthony Minervini ,  Jay Cech ,  Sung B. Lee

IPC: C30B33/08

CPC classification number: B81C1/00547 ,  B81C2201/0143

Abstract: A directed energy source is applied to a portion of a material, creating at least one altered region and leaving at least one unaltered region. The material is exposed to an etchant which removes the at least one altered region leaving substantially all of the unaltered region.

Abstract translation: 定向能量源被施加到材料的一部分，产生至少一个改变的区域并留下至少一个未改变的区域。 该材料暴露于蚀刻剂，其除去至少一个改变的区域，留下基本上所有未改变的区域。

公开(公告)号：US20080006888A1

公开(公告)日：2008-01-10

申请号：US11263476

申请日：2005-10-31

Applicant: Yong Yun ,  Chil Ah ,  Dong Ha ,  Hyung Park ,  Wan Yun ,  Kwang-Cheol Lee ,  Gwang Park

Inventor： Yong Yun ,  Chil Ah ,  Dong Ha ,  Hyung Park ,  Wan Yun ,  Kwang-Cheol Lee ,  Gwang Park

IPC: H01L21/00

CPC classification number: B81C99/0095 ,  B81B2201/035 ,  B81C2201/0143 ,  Y10S977/883 ,  Y10S977/888

Abstract: Disclosed herein is a method of fabricating nano-components using nanoplates, including the steps of: printing a grid on a substrate using photolithography and Electron Beam Lithography; spraying an aqueous solution dispersed with nanoplates onto the grid portion to position the nanoplates on the substrate; depositing a protective film of a predetermined thickness on the substrate and the nanoplates positioned on the substrate; ion-etching the nanoplates deposited with the protective film by using a Focused Ion Beam (FIB) or Electron Beam Lithography; and eliminating the protective film remaining on the substrate using a protective film remover after the ion-etching of the nanoplates, and a method of manufacturing nanomachines or nanostructures by transporting such nano-components using a nano probe and assembling with other nano-components. The present invention makes it possible to fabricate the high-quality nano-components in a more simple and easier manner at a lower cost, as compared to other conventional methods. Further, the present invention provides a method of implementing nanomachines through combination of such nano-components and biomolecules, etc.

Abstract translation: 本文公开了使用纳米板制造纳米组分的方法，包括以下步骤：使用光刻和电子束光刻在衬底上印刷栅格; 将分散有纳米板的水溶液喷射到栅格部分上以将纳米板定位在基底上; 在衬底和位于衬底上的纳米板上沉积预定厚度的保护膜; 通过使用聚焦离子束（FIB）或电子束光刻法离子蚀刻沉积有保护膜的纳米板; 并且在纳米板的离子蚀刻之后使用保护膜去除剂去除残留在基板上的保护膜，以及通过使用纳米探针传输这种纳米成分并与其他纳米成分组装来制造纳米机械或纳米结构的方法。 与其它常规方法相比，本发明可以以更简单和更容易的方式以更低的成本制造高质量的纳米组分。 此外，本发明提供了通过这些纳米组分和生物分子等的组合来实现纳米机器的方法。

公开(公告)号：US07209858B1

公开(公告)日：2007-04-24

申请号：US11240756

申请日：2005-09-30

Applicant: Chen-Hsiung Cheng

Inventor： Chen-Hsiung Cheng

IPC: G01B3/22 ,  G01B5/20 ,  G01B7/28

CPC classification number: B23K26/04 ,  B81C1/00626 ,  B81C2201/0143

Abstract: A method for generating a surface profile of a microstructure. The profile is processed to determine positions of at least two edges and an approximate center point of the profiled surface. Segments of points on the determined profile are fit to a straight line centered at the approximate center point. A standard deviation of the fitted points is measured. The length and position of the segment are varied until a minimum standard deviation is determined and the process is repeated for segments having different lengths. The point is determined from the longest segment having a standard deviation approximately equal to the minimum standard deviation of all of the segment lengths.

Abstract translation: 一种用于产生微结构的表面轮廓的方法。 处理轮廓以确定至少两个边缘的位置和成型表面的近似中心点。 所确定的轮廓上的点的分段适合以大致中心点为中心的直线。 测量拟合点的标准偏差。 片段的长度和位置是变化的，直到确定最小标准偏差，并且对具有不同长度的片段重复该过程。 该点由具有大致等于所有段长度的最小标准偏差的标准偏差的最长段确定。

公开(公告)号：US07160475B2

公开(公告)日：2007-01-09

申请号：US10301208

申请日：2002-11-21

Applicant: Lawrence Scipioni

Inventor： Lawrence Scipioni

IPC: G21G5/00

CPC classification number: G21K1/087 ,  B81C1/00547 ,  B81C2201/0143 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3056 ,  H01J37/3174 ,  H01J2237/31732

Abstract: The present disclosure relates to a method for generating a three-dimensional microstructure in an object. In one embodiment, a method for fabricating a microscopic three-dimensional structure is provided. A work piece is provided that includes a target area at which the three-dimensional structure is to be fabricated. The target area has a plurality of virtual dwell points. A shaped beam is provided to project onto the work piece. The intersection of the shaped beam with the work piece defines a beam incidence region that has a desired shape. The beam incidence region is sufficiently large to encompass multiple ones of the virtual dwell points. The shaped beam is moved across the work piece such that different ones of the virtual dwell points come into it and leave it as the beam moves across the work piece thereby providing different doses to different ones of the virtual dwell points as the different dwell points remain in the beam incidence region for different lengths of time during the beam scan. In this way, a desired dose array of beam particles is applied onto the target area to form the three dimensional microstructure.

Abstract translation: 本公开涉及一种用于在物体中产生三维微结构的方法。 在一个实施例中，提供了一种用于制造微观三维结构的方法。 提供了包括要制造三维结构的目标区域的工件。 目标区域具有多个虚拟驻留点。 提供成形梁以投影到工件上。 成形梁与工件的交点限定了具有期望形状的射束入射区域。 光束入射区域足够大以包含多个虚拟驻留点。 成形的梁移动穿过工件，使得不同的虚拟停留点进入并离开它，当梁移动穿过工件，从而当不同的停留点保持不同时向不同的虚拟停留点提供不同的剂量 在光束入射区域中在束扫描期间不同长度的时间。 以这种方式，将期望的束粒子的剂量阵列施加到目标区域上以形成三维微结构。

公开(公告)号：US20060183330A1

公开(公告)日：2006-08-17

申请号：US11061485

申请日：2005-02-17

Applicant: Margaret Abraham ,  Henry Helvajian ,  Siegfried Janson

Inventor： Margaret Abraham ,  Henry Helvajian ,  Siegfried Janson

IPC: H01L21/302 ,  B23K26/16

CPC classification number: H01L21/31116 ,  B81C1/00484 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01L21/26533

Abstract: A method using an etchant and a laser for localized precise heating enables precise etching and release of MEMS devices with improved process control while expanding the number of materials used to make MEMS, including silicon-dioxide patterned films buried in and subsequently released from bulk silicon, as a direct write method of release of patterned structures that enables removal of only that material needed to allow the device to perform to be precisely released, after which, the bulk material can be further processed for additional electrical or packaging functions.

Abstract translation: 使用蚀刻剂和激光器进行局部精确加热的方法使得可以通过改进的工艺控制精确地蚀刻和释放MEMS器件，同时扩大用于制造MEMS的材料的数量，包括埋入并随后从体硅释放的二氧化硅图案化膜， 作为图案化结构的释放的直接写入方法，其能够仅去除允许器件执行精确释放所需的材料，之后可以进一步处理散装材料以用于额外的电气或封装功能。