公开(公告)号：WO2005093721A1

公开(公告)日：2005-10-06

申请号：PCT/JP2005/005648

申请日：2005-03-22

Applicant: パイオニア株式会社 ,  勝村 昌広

Inventor： 勝村 昌広

IPC: G11B5/84

CPC classification number: G03F7/201 ,  B82Y10/00 ,  G03F1/42 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855 ,  G11B5/865

Abstract: 所定の回転角度毎に、ディスクの位置情報を与えるための凹凸状のサーボパターンを有するサーボゾーンと、データを記録するための凹凸形状のパターンを有するデータゾーンとが形成された磁気ディスク基板作製用転写型。また、所定の回転角度毎に、ディスクの位置情報を与えるためのサーボパターンを有するサーボゾーンと、データを記録するためのパターンを有するデータゾーンとが形成された露光マスク。

Abstract translation: 用于制造磁盘板的转移模具设置有具有坚固的伺服图案的伺服区，用于通过规定的旋转角度提供盘位置信息，以及具有用于记录数据的坚固图案的数据区。 曝光掩模设置有用于通过规定的旋转角度提供盘位置信息的伺服区，以及具有用于记录数据的图案的数据区。

公开(公告)号：WO2004095138A3

公开(公告)日：2005-07-07

申请号：PCT/EP2004050610

申请日：2004-04-26

Applicant: FOND CAFI ,  JACCARD SAMUEL ,  MIKHAILOV SERGUEI ,  MUNNIK FRANS

Inventor： JACCARD SAMUEL ,  MIKHAILOV SERGUEI ,  MUNNIK FRANS

IPC: G03F7/20 ,  H01J37/317

CPC classification number: B81C1/00492 ,  B81C2201/032 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/201 ,  H01J37/3174 ,  H01J2237/31735 ,  H01J2237/31755 ,  H01J2237/31774 ,  H01J2237/31796 ,  Y10S430/143

Abstract: Ion beam lithography technique wherein a higher amount of radiation energy is deposited to predetermined regions in the bulk if a suitable substrate. By selecting the radiation nature, its energy and the irradiation parameters a structure can be created in the bulk of the material leaving the surface essentially untouched.

Abstract translation: 离子束光刻技术，其中如果合适的衬底，较高量的辐射能量沉积到本体中的预定区域。 通过选择辐射性质，其能量和照射参数，可以在离开表面基本上不变的材料的主体中产生结构。

公开(公告)号：WO2003072967A1

公开(公告)日：2003-09-04

申请号：PCT/JP2003/002240

申请日：2003-02-27

Applicant: 富士通株式会社 ,  上田 正則 ,  松永 治幸

Inventor： 上田 正則 ,  松永 治幸

IPC: F16C33/14

CPC classification number: G03F7/201 ,  C23F1/02 ,  F16C17/026 ,  F16C17/102 ,  F16C17/107 ,  F16C33/107 ,  F16C33/14 ,  F16C2223/70 ,  G03F7/00 ,  G03F7/2032 ,  G03F7/24 ,  Y10T29/49639

Abstract: A dynamic pressure bearing manufacturing method, comprising the steps of forming a herringbone groove pattern on the outer peripheral surface of a cylindrical mask (1) and a spiral groove pattern on the lower surface of the flange part thereof, inserting the mask (1) into a dynamic pressure bearing (2) and optical fibers (4) into the mask (1), radiating light from an external light source to the mask (1) through optical fibers (4) to transfer the herringbone groove pattern onto the inner peripheral surface of the dynamic pressure bearing (2) and, at the same time, radiating the light from the upper side of the flange part to transfer the spiral groove pattern onto the upper surface of the dynamic pressure bearing (2), performing a development, and forming a herringbone grooves (21) in the inner peripheral surface of the bearing (2) by etching and a spiral groove (22) in the upper surface thereof.

Abstract translation: 一种动态压力轴承制造方法，包括以下步骤：在圆柱形掩模（1）的外周面上形成人字形槽图案，并在其凸缘部分的下表面上形成螺旋槽图案，将掩模（1）插入 将动态压力轴承（2）和光纤（4）插入到掩模（1）中，通过光纤（4）将来自外部光源的光照射到掩模（1），以将人字形槽图案转印到内周面 的动压轴承（2），同时从凸缘部的上侧照射光，将螺旋槽图案转印到动压轴承（2）的上表面，进行显影，并且 通过蚀刻在轴承（2）的内周面上形成人字形槽（21），在其上表面形成螺旋槽（22）。

公开(公告)号：WO0250613A2

公开(公告)日：2002-06-27

申请号：PCT/US0149105

申请日：2001-12-18

Applicant: UNIV VERMONT

Inventor： ESSER BRIAN ,  HUSTON DRYVER R ,  PELCZARSKI NOEL V ,  SAUTER WOLFGANG

IPC: C08F2/46 ,  C08F2/48 ,  G02B27/56 ,  G03F7/20 ,  G03F

CPC classification number: B82Y10/00 ,  G02B27/56 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/70383

Abstract: A method of curing a photosensitive material (10) having a critical electrical field amplitude (Ic) at which photoinitiation occurs. The method includes contacting the photosensitive material, e.g., a photoinitiator/monomer resin system, with a substrate (18) having surface (22), such as an optical element, so as to form an interface (20) between the photosensitive material and the substrate surface. A light beam (12) from source (14) is directed into the substrate, such that the light beam is totally internally reflected from the interface within the substrate, so that an evanescent wave is created in the photosensitive material with amplitude (I). In order for curing to occur in photoinitiation region (16) to depth (I), the electric field amplitude (Io) of the evanescent wave at the interface must be least equal to the critical electric field amplitude of the photosensitive material.

Abstract translation: 一种固化具有发生光引发的临界电场幅度（Ic）的光敏材料（10）的方法。 该方法包括使光敏材料（例如光引发剂/单体树脂体系）与具有表面（22）的基材（18）例如光学元件接触，以便在光敏材料和光敏材料之间形成界面（20） 衬底表面。 来自源（14）的光束（12）被引导到衬底中，使得光束从衬底内的界面全内反射，从而在具有振幅（I）的光敏材料中产生衰逝波。 为了使光引发区域（16）中的固化发生到深度（I），界面处渐逝波的电场幅度（Io）必须至少等于光敏材料的临界电场幅度。

公开(公告)号：WO98058389A1

公开(公告)日：1998-12-23

申请号：PCT/US1998/013045

申请日：1998-06-19

IPC: G21K1/02 ,  G21K1/00

CPC classification number: G03F7/0007 ,  G03F7/201 ,  G21K1/025

Abstract: Disclosed are methods for making large area antiscatter grids consisting of focussed and unfocussed holes in sheets of metal. The grid consists of thin metal walls (30) surrounding hollow openings (31). The projections of all walls converge to a focal spot in the focussed grid, and are parallel in an unfocussed grid. A grid having a large area is made by interlocking together smaller grid pieces. A tall device is made by stacking layers of focussed grids. The openings of the grid can be filled with phosphor or other scintillating material (33) to make an integrated grid/scintillator structure.

Abstract translation: 公开了用于制造由金属板中的聚焦和未聚焦的孔组成的大面积反散射栅格的方法。 网格由围绕中空开口（31）的薄金属壁（30）组成。 所有墙壁的突起都聚集在聚焦网格中的焦斑处，并且在未被聚焦的网格中平行。 具有大面积的网格通过将较小的网格片互锁在一起而制成。 一个高度的装置是通过堆叠聚焦的网格层来制成的。 网格的开口可以用磷光体或其他闪烁材料（33）填充以形成集成的栅格/闪烁体结构。

公开(公告)号：US20240241446A1

公开(公告)日：2024-07-18

申请号：US18620262

申请日：2024-03-28

Applicant: Intel Corporation

Inventor： Marvin Paik ,  Charles H. Wallace ,  Leonard Guler ,  Elliot N. Tan ,  Shengsi Liu ,  Vivek Vishwakarma ,  Izabela Samek ,  Mohammadreza Soleymaniha

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/027

CPC classification number: G03F7/2022 ,  G03F7/2004 ,  G03F7/201 ,  G03F7/70033 ,  G03F7/7005 ,  G03F7/70525 ,  G03F7/7055 ,  G03F7/70725 ,  H01L21/0275

Abstract: Apparatus and methods are disclosed. An example lithography apparatus includes an ultraviolet (UV) source to expose a photoresist layer to UV light; and an extreme ultraviolet (EUV) source coupled to the UV source, the EUV source to expose the photoresist layer to EUV light to via a photomask, a combination of the UV light and the EUV light provide a pattern on the photoresist layer when a developer solution is applied to the photoresist layer.

公开(公告)号：US20240184209A1

公开(公告)日：2024-06-06

申请号：US18060593

申请日：2022-12-01

Applicant: Intel Corporation

Inventor： Changhua LIU ,  Bai NIE ,  Robert MAY

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/201 ,  G03F7/0007 ,  G03F7/2006 ,  G03F7/2014

Abstract: The present disclosure is directed to a lithographic patterning system including a stage for supporting a substrate with a photo-definable polymer layer, a first actinic radiation source, which is configured to propagate light along a first optical axis, a first mask for patterning the propagated light from the first actinic radiation source, a second actinic radiation source, which is configured to propagate light along a second optical axis, and a second mask for patterning the propagated light from the second actinic radiation source. In a method, first and second propagated lights form an intersection in the photo-definable polymer layer, and a patterned semiconductor component is formed at the intersection.

公开(公告)号：US11977246B2

公开(公告)日：2024-05-07

申请号：US18120520

申请日：2023-03-13

Applicant: Applied Materials, Inc.

Inventor： Yongan Xu ,  Rutger Meyer Timmerman Thijssen ,  Jinrui Guo ,  Ludovic Godet

IPC: G02B5/18 ,  G03F1/42 ,  G03F7/00 ,  G03F7/20

CPC classification number: G02B5/1857 ,  G03F1/42 ,  G03F7/201 ,  G03F7/70775 ,  G03F7/2002

Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

公开(公告)号：US11837470B2

公开(公告)日：2023-12-05

申请号：US17229478

申请日：2021-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisun Lee ,  Seokwoo Jeon ,  Sanghyun Nam

IPC: H01L21/027 ,  G03F1/26 ,  G03F7/20 ,  H01L21/02 ,  H01L29/06 ,  H01L29/775 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L21/0275 ,  G03F1/26 ,  G03F7/201 ,  H01L21/02603 ,  H01L21/02642 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/78696

Abstract: A method for fabricating a nano-structure includes: providing a phase mask having an uneven lattice structure to contact a photoresist film; exposing the photoresist film to a light through the phase mask such that the light is obliquely incident on a surface of the photoresist film; and developing the photoresist film to form a nano-structure.

公开(公告)号：US20190088472A1

公开(公告)日：2019-03-21

申请号：US16178893

申请日：2018-11-02

Applicant: Micron Technology, Inc.

Inventor： Scott E. Sills ,  Gurtej S. Sandhu

IPC: H01L21/027 ,  H01L21/768 ,  G03F7/38 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/16 ,  G03F7/26

CPC classification number: H01L21/0274 ,  G03F7/0035 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/201 ,  G03F7/26 ,  G03F7/38 ,  H01L21/76885 ,  H01L21/76897

Abstract: A method of forming a semiconductor device structure comprises forming a preliminary structure comprising a substrate, a photoresist material over the substrate, and a plurality of structures longitudinally extending through the photoresist material and at least partially into the substrate. The preliminary structure is exposed to electromagnetic radiation directed toward upper surfaces of the photoresist material and the plurality of structures at an angle non-orthogonal to the upper surfaces to form a patterned photoresist material. The patterned photoresist material is developed to selectively remove some regions of the patterned photoresist material relative to other regions of the patterned photoresist material. Linear structures substantially laterally aligned with at least some structures of the plurality of structures are formed using the other regions of the patterned photoresist material. Additional methods of forming a semiconductor device structure are also described.