Flat panel display in which low-voltage row and column address signals
control a much higher pixel activation voltage
    241.
    发明授权
    Flat panel display in which low-voltage row and column address signals control a much higher pixel activation voltage 失效
    平板显示器,其中低电压行和列地址信号控制高得多的像素激活电压

    公开(公告)号:US5616991A

    公开(公告)日:1997-04-01

    申请号:US530562

    申请日:1995-09-19

    Abstract: This invention is directed to an improvement of a field emission display architecture in which low-voltage row and column address signals control a much higher pixel activation voltage. Instead of using a pair of series-coupled transistors in the emitter node grounding path as in the original architecture (one of which is gated by a column signal and the other of which is gated by a row signal), only a single transistor is utilized in the emitter node grounding path, thus eliminating an intermediate node between the two transistors that was responsible for unwanted emissions under certain operating conditions. In a preferred embodiment of the invention, a current regulating resistor is placed in the grounding path in series with the primary grounding transistor, with the resistor being directly coupled to ground. Additionally, for the preferred embodiment of the invention, the gate of the grounding transistor is coupled via a second field-effect transistor to either a row signal or a column signal. In the case where the gate of the first transistor is coupled to a row signal, the gate of the second transistor is coupled to a column signal. Likewise, where the gate of the first transistor is coupled to a column signal, the gate of the second transistor is coupled to a row signal. Numerous other equivalent circuits are possible, and several examples of such equivalent circuits are depicted in this disclosure.

    Abstract translation: 本发明涉及一种场致发射显示结构的改进,其中低电压行和列地址信号控制高得多的像素激活电压。 不像原始架构(其中之一由列信号门控,另一个由行信号门控)在发射极节点接地路径中使用一对串联耦合晶体管,而是仅使用单个晶体管 在发射极节点接地路径中,从而消除了在某些工作条件下负责无用发射的两个晶体管之间的中间节点。 在本发明的优选实施例中,电流调节电阻器被放置在与主接地晶体管串联的接地路径中,电阻器直接耦合到地。 此外,对于本发明的优选实施例,接地晶体管的栅极经由第二场效应晶体管耦合到行信号或列信号。 在第一晶体管的栅极耦合到行信号的情况下,第二晶体管的栅极耦合到列信号。 类似地,在第一晶体管的栅极耦合到列信号的情况下,第二晶体管的栅极耦合到行信号。 许多其他等效电路是可能的,并且在本公开中描述了这些等效电路的几个示例。

    Method for fabricating field emission device metallization
    243.
    发明授权
    Method for fabricating field emission device metallization 失效
    场致发射器件金属化制造方法

    公开(公告)号:US5601466A

    公开(公告)日:1997-02-11

    申请号:US424833

    申请日:1995-04-19

    CPC classification number: H01J9/025 H01J2201/319

    Abstract: Methods of fabricating an emitter plate 10 having titanium tungsten (Ti:W) and aluminum (Al) used in a sublayering arrangement as the metallization material for the gate electrodes 60, cathode electrodes 20, bond pads 80 and 130, lead interconnects 100, 101, 120 and 121, and integrated circuit (IC) mount pads 90 and 91. In a disclosed embodiment, titanium tungsten and aluminum sublayers are combined with niobium to provide the metallization material.

    Abstract translation: 在子层布置中制造具有钛钨(Ti:W)和铝(Al)的发射极板10的方法,用作栅电极60,阴极20,接合焊盘80和130的金属化材料,引线互连100,101 ,120和121以及集成电路(IC)安装焊盘90和91.在所公开的实施例中,钛钨和铝子层与铌组合以提供金属化材料。

    High resolution cold cathode field emission display method
    244.
    发明授权
    High resolution cold cathode field emission display method 失效
    高分辨率冷阴极场发射显示方法

    公开(公告)号:US5591352A

    公开(公告)日:1997-01-07

    申请号:US429730

    申请日:1995-04-27

    Applicant: Chao-Chi Peng

    Inventor: Chao-Chi Peng

    Abstract: The object of the present invention is to provide a cold cathode field emission display whose resolution is not limited by the provision of individual ballast resistors for each pixel or by the wiring system used to deliver voltage to the cold cathodes. This has been achieved by providing additional layers beneath the cold cathodes arrays so that said resistors and voltage delivery systems are located directly below the cold cathode arrays instead of alongside of them. Six different embodiments of the invention are described.

    Abstract translation: 本发明的目的是提供一种冷阴极场致发射显示器,其分辨率不受每个像素提供单个镇流电阻器的限制,或者通过用于向冷阴极传送电压的布线系统来限制。 这已经通过在冷阴极阵列之下提供附加层来实现,使得所述电阻器和电压输送系统位于冷阴极阵列的正下方而不是它们旁边。 描述本发明的六个不同实施例。

    Method for forming high resistance resistors for limiting cathode
current in field emission displays
    245.
    发明授权
    Method for forming high resistance resistors for limiting cathode current in field emission displays 失效
    用于形成用于限制场致发射显示器中的阴极电流的高电阻电阻的方法

    公开(公告)号:US5585301A

    公开(公告)日:1996-12-17

    申请号:US502388

    申请日:1995-07-14

    CPC classification number: H01L28/24 H01J9/025 H01L28/20 H01J2201/319

    Abstract: A method for forming resistors for regulating current in a field emission display comprises integrating a high resistance resistor into circuitry for the field emission display. The resistor is in electrical communication with emitter sites for the field emission display and with other circuit components such as ground. The high resistance resistor can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate of the field emission display. Contacts are formed in the high resistivity material to establish electrical communication between the resistor and the emitter sites and between the resistor and the other circuit components. The contacts can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).

    Abstract translation: 用于形成用于调节场致发射显示器中的电流的电阻器的方法包括将高电阻电阻集成到用于场发射显示的电路中。 电阻器与发射器位置电气连通,用于场发射显示器和其他电路部件,例如接地。 高电阻电阻器可以形成为高电阻率材料的层,例如本征多晶硅,掺杂有导电性降解掺杂剂的多晶硅,轻掺杂多晶硅,氮氧化钛,氮氧化钽或沉积在基板上的玻璃类型材料 的场发射显示。 在高电阻率材料中形成触点,以在电阻器和发射极部位之间以及电阻器和其它电路部件之间建立电连通。 触点可以形成为低电阻触点(例如欧姆接触)或作为高电阻触点(例如肖特基触点)。

    Clustered field emission microtips adjacent stripe conductors
    247.
    发明授权
    Clustered field emission microtips adjacent stripe conductors 失效
    集束场发射微带相邻条纹导体

    公开(公告)号:US5556316A

    公开(公告)日:1996-09-17

    申请号:US476776

    申请日:1995-06-07

    CPC classification number: H01J1/3042 H01J2201/319

    Abstract: The emitter plate 60 of a field emission flat panel display device includes a layer 68 of a resistive material and a mesh-like structure 62 of an electrically conductive material. A conductive plate 78 is also formed on top of resistive coating 68 within the spacing defined by the meshes of conductor 62. Microtip emitters 70, illustratively in the shape of cones, are formed on the upper surface of conductive plate 78. With this configuration, all of the microtip emitters 70 will be at an equal potential by virtue of their electrical connection to conductive plate 78. In one embodiment, a single conductive plate 82 is positioned within each mesh spacing of conductor 80; in another embodiment, four conductive plates 92 are symmetrically positioned within each mesh spacing of conductor 90. Also disclosed is an arrangement of emitter clusters comprising conductive plates 102 having a plurality of microtip emitters 104 formed thereon, or spaced therefrom by a thin layer of resistive material, each cluster adjacent and laterally spaced from a stripe conductor 100 by a region 106 of a resistive material. The conductive stripes 100 are substantially parallel to each other, are spaced from one another by two conductive plates 102, and are joined by bus regions 110 outside the active area of the display.

    Abstract translation: 场发射平板显示装置的发射极板60包括电阻材料层68和导电材料的网状结构62。 在由导体62的网格限定的间隔内,还在电阻涂层68的顶部形成导电板78.导电板78的上表面上形成了示意为锥体形状的微尖头发射体70。 通过它们与导电板78的电连接,所有微尖端发射器70将处于相等的电位。在一个实施例中,单个导电板82位于导体80的每个网格间隔内; 在另一个实施例中,四个导电板92对称地定位在导体90的每个网格间隔内。还公开了发射器​​簇的布置,其包括导电板102,其具有形成在其上的多个微尖端发射器104,或者通过薄层 材料,每个簇通过电阻材料的区域106与条状导体100相邻和横向间隔开。 导电条100基本上彼此平行,通过两个导电板102彼此隔开,并且通过显示器的有效区域外的总线区域110连接。

    Clustered field emission microtips adjacent stripe conductors
    249.
    发明授权
    Clustered field emission microtips adjacent stripe conductors 失效
    集束场发射微带相邻条纹导体

    公开(公告)号:US5536993A

    公开(公告)日:1996-07-16

    申请号:US378331

    申请日:1995-01-26

    CPC classification number: H01J1/3042 H01J2201/319

    Abstract: The emitter plate 60 of a field emission flat panel display device includes a layer 68 of a resistive material and a mesh-like structure 62 of an electrically conductive material. A conductive plate 78 is also formed on top of resistive coating 68 within the spacing defined by the meshes of conductor 62. Microtip emitters 70; illustratively in the shape of cones, are formed on the upper surface of conductive plate 78. With this configuration, all of the microtip emitters 70 will be at an equal potential by virtue of their electrical connection to conductive plate 78. In one embodiment, a single conductive plate 82 is positioned within each mesh spacing of conductor 80; in another embodiment, four conductive plates 92 are symmetrically positioned within each mesh spacing of conductor 90. Also disclosed is an arrangement of emitter clusters comprising conductive plates 102 having a plurality of microtip emitters 104 formed thereon, or spaced therefrom by a thin layer of resistive material, each cluster adjacent and laterally spaced from a stripe conductor 100 by a region 106 of a resistive material. The conductive stripes 100 are substantially parallel to each other, are spaced from one another by two conductive plates 102, and are joined by bus regions 110 outside the active area of the display.

    Abstract translation: 场发射平板显示装置的发射极板60包括电阻材料层68和导电材料的网状结构62。 导电板78也形成在由导体62的网格限定的间隔内的电阻涂层68的顶部上。微尖端发射器70; 在导电板78的上表面上形成了锥形的形状。利用这种结构,所有的微尖端发射器70由于与导电板78的电连接而处于相等的电位。在一个实施例中, 单导电板82位于导体80的每个网格间隔内; 在另一个实施例中,四个导电板92对称地定位在导体90的每个网格间隔内。还公开了发射器​​簇的布置,其包括导电板102,其具有形成在其上的多个微尖端发射器104,或者通过薄层 材料,每个簇通过电阻材料的区域106与条状导体100相邻和横向间隔开。 导电条100基本上彼此平行,通过两个导电板102彼此隔开,并且通过显示器的有效区域外的总线区域110连接。

    Micropoint emissive cathode electron source and field emission-excited
cathodoluminescence display means using said source
    250.
    发明授权
    Micropoint emissive cathode electron source and field emission-excited cathodoluminescence display means using said source 失效
    微点发射阴极电子源和场发射激发阴极发光显示装置使用所述源

    公开(公告)号:US5534744A

    公开(公告)日:1996-07-09

    申请号:US337528

    申请日:1994-11-08

    CPC classification number: H01J3/022 H01J31/127 H01J2201/319

    Abstract: Micropoint emissive cathode electron source and field emission-excited cathodoluminescence display means using said source. The source comprises a series of electrodes (5) acting as cathode conductors and carrying micropoints (12) and a series of electrodes (10g) acting as grids, each of the electrodes of one of the series being in contact with a resistive layer (7) and having a lattice structure, so that there are consequently tracks (5a) which intersect and define first openings (6), each of the electrodes of the other series having second openings (11) which are displaced with respect to the first openings.

    Abstract translation: 微点发射阴极电子源和场发射激发阴极发光显示装置使用所述源。 源包括一系列用作阴极导体的电极(5),并承载微点(12)和一系列电极(10g),其中一个电极的每个电极与电阻层(7 )并且具有格子结构,使得因此存在与第一开口(6)相交并限定第一开口(6)的轨道(5a),另一系列的每个电极具有相对于第一开口移位的第二开口(11)。

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