公开(公告)号：US20240183719A1

公开(公告)日：2024-06-06

申请号：US18061918

申请日：2022-12-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Enrico Rosario ALESSI ,  Fabio PASSANITI ,  Antonella LICCIARDELLO ,  Daniele BALDACCHINO

IPC: G01J5/0806 ,  G01J5/05 ,  G01J5/068

CPC classification number: G01J5/0806 ,  G01J5/05 ,  G01J5/068

Abstract: A sensor device includes a passive infrared sensor, a control circuit, and a lens that directs infrared radiation onto the passive infrared sensor. The lens includes an obstruction that asymmetrically blocks transmission of infrared radiation through the lens. The control circuit is configured to determine the direction of crossing of individuals passing in front of the sensor device based on sensor signals from the passive infrared sensor.

公开(公告)号：US20240178301A1

公开(公告)日：2024-05-30

申请号：US18530050

申请日：2023-12-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ferdinando IUCOLANO ,  Alfonso PATTI ,  Alessandro CHINI

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/205 ,  H01L29/423 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/2003

Abstract: A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.

公开(公告)号：US11996158B2

公开(公告)日：2024-05-28

申请号：US18349565

申请日：2023-07-10

Applicant: STMicroelectronics S.r.I.

Inventor： Giampiero Borgonovo ,  Lorenzo Re Fiorentin

IPC: G11C29/42 ,  G11C29/12 ,  G11C29/18 ,  G11C29/44

CPC classification number: G11C29/42 ,  G11C29/12015 ,  G11C29/18 ,  G11C29/4401

Abstract: A device includes a set of processing circuits arranged in subsets, a set of data memory banks coupled to a memory controller, a control unit, and an interconnect network. The processing circuits are configurable to read first input data from the data memory banks via the interconnect network and the memory controller, process the first input data to produce output data, and write the output data into the data memory banks via the interconnect network and the memory controller. The hardware accelerator device includes a set of configurable lock-step control units which interface the processing circuits to the interconnect network. Each configurable lock-step control unit is coupled to a subset of processing circuits and is selectively activatable to operate in a first operation mode, or in a second operation mode.

公开(公告)号：US11989065B2

公开(公告)日：2024-05-21

申请号：US17578336

申请日：2022-01-18

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Fabio Passaniti ,  Enrico Rosario Alessi

IPC: H01T23/00 ,  G06F1/16

CPC classification number: G06F1/1677 ,  G06F1/1616 ,  G06F1/1652

Abstract: The present disclosure is directed to devices and methods for performing screen state detection. The screen state detection may be used in conjunction with any device with a bendable display. The device and method utilizes an electrostatic charge variation sensor to detect whether the display is in an open state or a closed state.

公开(公告)号：US20240162371A1

公开(公告)日：2024-05-16

申请号：US18504034

申请日：2023-11-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Giuseppe D'ARRIGO ,  Antonella SCIUTO ,  Domenico Pierpaolo MELLO ,  Pietro Paolo BARBARINO ,  Salvatore COFFA

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/34

CPC classification number: H01L33/025 ,  H01L33/0054 ,  H01L33/20 ,  H01L33/34

Abstract: A light-emitter device comprising: a body of solid-state material; and a P-N junction in the body, including: a cathode region, having N-type conductivity; an anode region, having P-type conductivity, extending in direct contact with the cathode region and defining a light-emitting surface; and a depletion region around an interface between the anode and the cathode regions. The light-emitting surface has at least one indentation that extends towards the depletion region. The depletion region has a peak defectiveness area, housing irregularities in crystal lattice, in correspondence of said at least one indentation. The defectiveness area, which includes point defects, line defects, bulk defects, etc., is generated as a direct consequence of the formation of the indentation by an indenter or nanoindenter system. In the defectiveness area color centers are generated.

公开(公告)号：US20240162175A1

公开(公告)日：2024-05-16

申请号：US18054806

申请日：2022-11-11

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Lucrezia GUARINO ,  Francesca MILANESI ,  Claudio ZAFFERONI

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L2224/0225 ,  H01L2224/0233 ,  H01L2224/03001 ,  H01L2224/0401 ,  H01L2224/04042

Abstract: The present disclosure is directed to embodiments of a conductive structure on a conductive barrier layer that separates the conductive structure from a conductive layer on which the conductive barrier layer is present. A gap or crevice extends along respective surfaces of the conductive structure and along respective surfaces of one or more insulating layers. The gap or crevice separates the respective surfaces of the one or more insulating layers from the respective surfaces of the conductive structure. The gap or crevice provides clearance in which the conductive structure may expand into when exposed to changes in temperature. For example, when coupling a wire bond to the conductive structure, the conductive structure may increase in temperature and expand into the gap or crevice. However, even in the expanded state, respective surfaces of the conductive structure do not physically contact the respective surfaces of the one or more insulating layers.

公开(公告)号：US11982928B2

公开(公告)日：2024-05-14

申请号：US17979363

申请日：2022-11-02

Applicant: STMicroelectronics LTD ,  STMicroelectronics S.r.l.

Inventor： Alex Domnits ,  Elan Roth ,  Davide Terzi ,  Luca Molinari ,  Marco Boschi

IPC: G03B21/14 ,  G01J1/02 ,  G01J1/44 ,  G03B21/00 ,  G03B21/20

CPC classification number: G03B21/142 ,  G01J1/0238 ,  G01J1/44 ,  G03B21/008 ,  G03B21/2033

Abstract: A scanning laser projector includes an optical module with a housing defined by a top surface, a bottom surface, and sidewalls extending between the top surface and bottom surface to define an interior compartment within the housing. A given one of the sidewalls has an exit window defined therein. A first light detector is positioned at an interior surface of the given one of the sidewalls about a periphery of the exit window. A second light detector positioned at the interior surface of the given one of the sidewalls about the periphery of the exit window and on a different side thereof than the first light detector.

公开(公告)号：US20240153553A1

公开(公告)日：2024-05-09

申请号：US18406097

申请日：2024-01-06

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics S.r.l.

Inventor： Antonino Conte ,  Alin Razafindraibe ,  Francesco Tomaiuolo ,  Thibault Mortier

IPC: G11C13/00

CPC classification number: G11C13/0028 ,  G11C13/0004 ,  G11C13/003 ,  G11C2213/79

Abstract: In an embodiment, a non-volatile memory device is proposed. The device includes a plurality of local pull-up stages distributed along a group of memory portions in a memory array. Each local pull-up stage includes, for each wordline that extends through the group of memory portions, a corresponding local pull-up transistor of an NMOS type. The local pull-up transistors of each local pull-up are configured to locally decouple the corresponding wordline from a node at a first reference potential in response to a wordline that extends through the group of memory portions being selected, and locally couple the corresponding wordline to the node at the first reference potential in response to all the wordlines that extend through the group of memory portions being deselected to restore locally a deselection voltage on a wordline previously selected.

公开(公告)号：US11977424B2

公开(公告)日：2024-05-07

申请号：US17702529

申请日：2022-03-23

Applicant: STMicroelectronics Application GmbH ,  STMicroelectronics S.r.l.

Inventor： Roberto Colombo ,  Nicolas Bernard Grossier

IPC: G06F1/24

CPC classification number: G06F1/24

Abstract: A processing system includes a reset circuit, a memory storing configuration data, and a hardware configuration circuit transmitting the configuration data to configuration data clients. The system executes a reset phase, configuration phase, and software runtime phase. First and second reset terminals are associated with first and second circuitries which are respectively associated with configuration data clients. The configuration data includes first and second mode configuration data for the first and second terminals. During the reset and configuration phase, the first circuitry activates a strong pull-down, and the second circuitry activates a weak pull-down. During the software runtime phase, the first circuitry activate a weak pull-down for implementing a bidirectional reset terminal or activates a weak pull-up resistance for implementing a reset output terminal, and the second circuitry activates a weak pull-up for implementing a reset input terminal or activates a strong pull-up for implementing a reset output terminal.

公开(公告)号：US11977190B2

公开(公告)日：2024-05-07

申请号：US16917517

申请日：2020-06-30

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Sara Loi ,  Paolo Crema ,  Alessandro Freguglia

IPC: G01T1/20 ,  G01T1/02

CPC classification number: G01T1/20184 ,  G01T1/023 ,  G01T1/2002 ,  G01T1/20187

Abstract: A device such as a dosimeter for detecting ionizing radiation, for example, X-ray radiation, in hospitals or the like. The device includes scintillator material configured to produce light as a result of radiation interacting with the scintillator material, and photoelectric conversion circuitry optically coupled to the scintillator material and configured to produce electrical signals via photoelectric conversion of light produced by the scintillator material. The device includes a plurality of photoelectric converters optically coupled with the scintillator material at spatially separated locations. The plurality of photoelectric converters thus produce respective electrical signals by photoelectric conversion of light produced by the scintillator material as a result of radiation interacting with the scintillator material. Improved energy linearity is thus facilitated while providing more efficient detection over the whole energy spectrum of radiation detected.