公开(公告)号：US20030205749A1

公开(公告)日：2003-11-06

申请号：US10453229

申请日：2003-06-03

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates ,  Garry A. Mercaldi

IPC: H01L027/108

CPC classification number: H01L28/92 ,  G03F7/0035 ,  G03F7/201 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/32139 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/91

Abstract: Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for protection of the inside of the holes during non-mechanical removal of exposed surface layers. The localized masking is accomplished through differential exposure of a resist layer to electromagnetic or thermal energy. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

公开(公告)号：US20020102475A1

公开(公告)日：2002-08-01

申请号：US10022067

申请日：2001-12-18

Applicant: The University of Vermont and State Agricultural College

Inventor： Brian Esser ,  Dryver R. Huston ,  Noel V. Pelczarski ,  Wolfgang Sauter

IPC: G03F007/20 ,  G03F007/24

CPC classification number: B82Y10/00 ,  G02B27/56 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/70383

Abstract: A method of curing a photosensitive material (10) having a critical electrical field amplitude at which photoinitiation occurs. The method includes contacting the photosensitive material, e.g., a photoinitiator/monomer resin system, with a substrate (18), such as an optical element, so as to form an interface (20) between the photosensitive material and the substrate. A light beam (12) is directed into the substrate such that the light beam is totally internally reflected from the interface within the substrate so that an evanescent wave is created in the photosensitive material. In order for curing to occur, the electric field amplitude of the evanescent wave at the interface must be at least equal to the critical electric field amplitude of the photosensitive material.

Abstract translation: 一种固化具有发生光引发的临界电场振幅的感光材料（10）的方法。 该方法包括使感光材料（例如光引发剂/单体树脂体系）与诸如光学元件的基材（18）接触，以在感光材料和基材之间形成界面（20）。 将光束（12）引导到基板中，使得光束从基板内的界面全内反射，使得在感光材料中产生ev逝波。 为了固化发生，界面处的消逝波的电场振幅必须至少等于感光材料的临界电场振幅。

公开(公告)号：US20010008741A1

公开(公告)日：2001-07-19

申请号：US09795442

申请日：2001-03-01

Applicant: FUJITSU LIMITED

Inventor： Junji Tomita ,  Fumio Yamagishi

IPC: G03F007/004 ,  G03F007/26 ,  G02B005/18

CPC classification number: G03F7/201 ,  G02B5/1857 ,  G03F7/0005

Abstract: A method of fabricating a diffraction grating by utilizing a single substrate comprises the steps of forming a photosensitive material layer and a light transmission reducing film having a predetermined pattern integrally with each other on the substrate, exposing the photosensitive material layer by exposure irradiation light via the light transmission reducing film, and developing the photosensitive material layer after exposure. It is composed so that the direction of exposure and the direction of development are opposite to each other. It is possible to fabricate a diffraction grating in which each grating is formed on a predetermined substrate at a predetermined pitch and a root portion in a cross-section of each diffraction grating is constricted. In this way, it is possible to reduce or eliminate interfaces, so that the generation of noise light can be effectively suppressed and a diffraction grating having a high diffraction efficiency can be made.

Abstract translation: 通过利用单个基板制造衍射光栅的方法包括以下步骤：在基板上形成具有预定图案的感光材料层和相互一体的透光率降低膜，通过曝光照射光将光敏材料层经由 透光降低膜，曝光后显影感光材料层。 它的组成是使曝光方向和发展方向彼此相反。 可以制造衍射光栅，其中每个光栅以预定间距形成在预定基板上，并且每个衍射光栅的横截面中的根部被收缩。 以这种方式，可以减少或消除界面，从而可以有效地抑制噪声光的产生，并且可以制造具有高衍射效率的衍射光栅。

公开(公告)号：US06233041B1

公开(公告)日：2001-05-15

申请号：US09106721

申请日：1998-06-29

Applicant: Naomasa Shiraishi

Inventor： Naomasa Shiraishi

IPC: G03B2742

CPC classification number: G03F9/7088 ,  G03F7/201 ,  G03F7/701 ,  G03F7/70241 ,  G03F7/7025 ,  G03F7/70308

Abstract: A method for transferring a fine pattern (12) on a mask (11) onto a substrate (17) by a projection exposure apparatus including an illumination optical system (1-10) for irradiating an illuminating light on the mask (11), and a projection optical system (13) for projecting an image of the fine pattern (12) on the illuminated mask onto the substrate (17). The illuminating light is irradiated at least in the form of a pair of light beams opposedly inclined with respect to the mask through a pair of transparent windows (6a, 6b) of a spatial filter (6) whereby either one of the ±first-order diffracted beams and the 0-order diffracted beam produced from the fine pattern (12) of the mask (11) illuminated by each light beam are respectively passed apart by the equal distance from the optical axis of the projection optical system at or near to the Fourier transform plane within the projection optical system with respect to the fine pattern (12) of the mask (11), thereby forming on the substrate (17) a high-resolution projected image of a strong light-and-dark contrast with a high degree of focus depth.

Abstract translation: 一种通过包括照射光学系统（1-10）的投影曝光装置将掩模（11）上的精细图案（12）转印到基板（17）上的方法，用于将掩模（11）上的照明光照射，以及 投影光学系统（13），用于将照射的掩模上的精细图案（12）的图像投影到基板（17）上。 照明光至少以通过空间滤光片（6）的一对透明窗（6a，6b）相对于掩模相对倾斜的一对光束的形式照射，由此±一阶 衍射光束和由每个光束照射的掩模（11）的精细图案（12）产生的0级衍射光束分别从投影光学系统的光轴在等于或接近于 相对于掩模（11）的精细图案（12）在投影光学系统内的傅立叶变换平面，从而在基板（17）上形成具有高的亮 - 暗对比度的高分辨率投影图像 焦点深度。

公开(公告)号：US6025115A

公开(公告)日：2000-02-15

申请号：US429288

申请日：1995-04-25

Applicant: Toshiyuki Komatsu ,  Yasue Sato ,  Shin-Ichi Kawate

Inventor： Toshiyuki Komatsu ,  Yasue Sato ,  Shin-Ichi Kawate

IPC: C23C16/04 ,  G03F1/00 ,  G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/36 ,  G03F7/38 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285 ,  H01L21/308 ,  H01L21/311 ,  H01L21/316 ,  H01L21/32 ,  H01L21/321 ,  H01L21/3213

CPC classification number: H01L21/02071 ,  C23C16/047 ,  G03F1/68 ,  G03F7/2002 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/2043 ,  G03F7/2053 ,  G03F7/265 ,  G03F7/36 ,  G03F7/38 ,  G03F7/7005 ,  G03F7/70841 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70991 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/32 ,  H01L21/321 ,  H01L21/32139 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/0042

Abstract: A processing method for etching a substrate is described. This method includes subjecting a surface of a substrate to be processed to selective irradiation with a light in a gas atmosphere to form a surface-modified layer. The substrate surface with the surface-modified layer is then annealed to stabilize and make the surface-modified layer more etch resistant. Both the stabilized surface-modified layer and a non-modified portion of the substrate are then subjected to dry etching, thereby utilizing the higher resistance to dry etching of the stabilized surface-modified layer compared to the non-modified portion to selectively etch the non-modified portion to a desired depth.

Abstract translation: 对基板的蚀刻处理方法进行说明。 该方法包括使待处理的基板的表面经受气体气氛中的光的选择性照射，以形成表面改性层。 然后将具有表面改性层的衬底表面退火以稳定并使表面改性层更耐蚀刻。 然后将稳定化的表面改性层和基底的未改性部分进行干蚀刻，从而与未改性部分相比，利用较稳定的表面改性层的干蚀刻的较高电阻以选择性地蚀刻非 - 改变的部分到期望的深度。

公开(公告)号：US5863706A

公开(公告)日：1999-01-26

申请号：US429287

申请日：1995-04-25

Applicant: Toshiyuki Komatsu ,  Yasue Sato ,  Shin-Ichi Kawate

Inventor： Toshiyuki Komatsu ,  Yasue Sato ,  Shin-Ichi Kawate

IPC: C23C16/04 ,  G03F1/00 ,  G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/36 ,  G03F7/38 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285 ,  H01L21/308 ,  H01L21/311 ,  H01L21/316 ,  H01L21/32 ,  H01L21/321 ,  H01L21/3213

CPC classification number: H01L21/02071 ,  C23C16/047 ,  G03F1/68 ,  G03F7/2002 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/2043 ,  G03F7/2053 ,  G03F7/265 ,  G03F7/36 ,  G03F7/38 ,  G03F7/7005 ,  G03F7/70841 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70991 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/32 ,  H01L21/321 ,  H01L21/32139 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/0042

Abstract: A processing method is described which has a first step of depositing on a substrate a specimen film which may be any one of a semiconductor, a metal and a insulator.In a second step, the surface of the specimen film deposited in the first step, is irradiated with an ion beam to produce a physical damage on the surface, next, in a third step, the damaged specimen film surface is selectively irradiated with the light to partially cause a photochemical reaction so that a mask pattern, which depends on the desired device structure, is formed on the film surface. Finally, in a fourth step, photoetching is performed using the mask pattern formed in the third step as a shielding member.

Abstract translation: 描述了一种处理方法，其具有在基板上沉积可以是半导体，金属和绝缘体中的任何一个的试样膜的第一步骤。 在第二步骤中，在第一步骤中沉积的样品膜的表面用离子束照射以在表面上产生物理损伤，接下来，在第三步骤中，损伤的样品膜表面被选择性地照射光 以部分地引起光化学反应，使得在膜表面上形成取决于期望的器件结构的掩模图案。 最后，在第四步骤中，使用在第三步骤中形成的掩模图案作为屏蔽部件进行光刻。

公开(公告)号：US5714306A

公开(公告)日：1998-02-03

申请号：US428431

申请日：1995-04-25

Applicant: Toshiyuki Komatsu ,  Yasue Sato ,  Shin-Ichi Kawate

Inventor： Toshiyuki Komatsu ,  Yasue Sato ,  Shin-Ichi Kawate

IPC: C23C16/04 ,  G03F1/68 ,  G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/36 ,  G03F7/38 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285 ,  H01L21/308 ,  H01L21/311 ,  H01L21/316 ,  H01L21/32 ,  H01L21/3213

CPC classification number: G03F1/68 ,  C23C16/047 ,  G03F7/2002 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/2043 ,  G03F7/2053 ,  G03F7/265 ,  G03F7/36 ,  G03F7/38 ,  G03F7/7005 ,  G03F7/70841 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70991 ,  H01L21/02071 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/32 ,  H01L21/32139 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/0042

Abstract: A processing method comprises: a first step of depositing on a substrate which is a specimen a film of any one of a semiconductor, a metal and an insulator; a second step of subjecting the surface of the film deposited in the first step, to irradiation with a beam having a given energy to produce a physical damage on the surface; a third step of subjecting the film surface on which the physical damage is produced in the second step, to selective irradiation with light to partially cause a photochemical reaction so that a mask pattern depending on the desired device structure is formed on the film surface; and a fourth step of carrying out photoetching using as a shielding member the mask pattern formed in the third step.

公开(公告)号：US5462837A

公开(公告)日：1995-10-31

申请号：US299406

申请日：1994-09-01

Applicant: Masahiro Yamaguchi

Inventor： Masahiro Yamaguchi

IPC: G03F7/20 ,  H05K3/00 ,  H05K3/28 ,  H05K3/34

CPC classification number: H05K3/3452 ,  G03F7/201 ,  H05K3/0082 ,  H05K3/28 ,  H05K2201/09909 ,  H05K2203/056 ,  H05K2203/0594

Abstract: A method of fabricating a printed circuit board includes the steps of forming a circuit pattern, applying solder resist, and exposing the solder resist. The circuit pattern including pads is formed on a substrate. The solder resist is applied on the substrate and the circuit pattern. The solder resist between the pads is exposed using a light source which emits scattered light and a mask film which is equipped with light transmission portions. The width of each light transmission portion is narrower than the distance between the pads. This method enables the formation of the solder resist in between fine pads in such a way that it does not cover an upper surface of the pad. The solder resist thus formed between the fine pads provides sufficient adhesion to the substrate.

Abstract translation: 一种制造印刷电路板的方法包括以下步骤：形成电路图案，施加阻焊剂和暴露阻焊剂。 包括焊盘的电路图案形成在基板上。 将阻焊剂施加在基板和电路图案上。 使用发射散射光的光源和配备有透光部的掩模膜来曝光焊盘之间的阻焊剂。 每个光传输部分的宽度比焊盘之间的距离窄。 该方法使得能够在细焊盘之间形成阻焊剂，使得其不覆盖焊盘的上表面。 如此形成的细焊盘之间的阻焊层提供了对基板的足够的粘附。

公开(公告)号：US5443932A

公开(公告)日：1995-08-22

申请号：US161099

申请日：1993-12-03

Applicant: Hirohisa Ohta ,  Kunitaka Ozawa ,  Eigo Kawakami ,  Shunichi Uzawa

Inventor： Hirohisa Ohta ,  Kunitaka Ozawa ,  Eigo Kawakami ,  Shunichi Uzawa

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

CPC classification number: G03F9/7023 ,  G03F7/201

Abstract: An exposure method includes disposing a mask and a semiconductor wafer opposed to each other in a close proximity relation with respect to a Z-axis direction and printing a pattern of the mask on each of different shot areas of the semiconductor wafer in a step-and-repeat manner, with a predetermined exposure energy. In this method, the spacing between the mask and the wafer for the paralleling of them is made larger than the spacing therebetween as assumed at the time of mask-to-wafer alignment with respect to X-Y plane or the spacing between the mask and the wafer as assumed at the time of exposure of the wafer to the mask. After the paralleling of the mask and the wafer, the mask and the wafer are moved closer to each other in the Z-axis direction and alignment and exposure is performed. This ensures that the alignment and exposure are effected at an optimum spacing while, on the other hand, contact of the mask and the wafer at the time of paralleling is precluded.

Abstract translation: 曝光方法包括以相对于Z轴方向彼此紧密相对的方式设置掩模和半导体晶片，并且在半导体晶片的不同照射区域的每一个上以均匀的方式印刷掩模的图案，并且 以预定的曝光能量。 在这种方法中，掩模和与它们并联的晶片之间的间隔被制成大于它们之间的间隔，如假设在相对于XY平面的掩模到晶片对准时或掩模和晶片之间的间隔 如在晶片暴露于掩模时所假设的那样。 在掩模和晶片平行之后，掩模和晶片在Z轴方向上彼此靠近移动，并进行对准和曝光。 这确保了对准和曝光以最佳间隔进行，另一方面，阻止了并联时的掩模与晶片的接触。

公开(公告)号：US5316897A

公开(公告)日：1994-05-31

申请号：US761159

申请日：1991-09-17

Applicant: Aaron Shafir

Inventor： Aaron Shafir

IPC: B05B15/04 ,  B05D1/32 ,  C03C23/00 ,  G03F7/20 ,  G03F9/00 ,  G03C5/04 ,  B32B31/00 ,  B05C9/08

CPC classification number: G03F9/00 ,  B05B15/045 ,  B05D1/32 ,  C03C23/001 ,  C03C23/002 ,  G03F7/201

Abstract: A method and apparatus for exposing a substrate of relatively large surface area to radiation according to a predetermined pattern recorded on a mask, particularly useful in applying a painted border to an automobile windshield, includes the steps of progressively recording the predetermined pattern on a mask in the form of a continuous strip, and moving the radiation source to progressively scan the surface of the substrate with radiation, while at the same time moving the continuous strip mask relative to the radiation source, such that portions of the pattern on the continuous strip mask progressively become aligned with their corresponding portions of the substrate as the substrate is progressively scanned by the radiation source.

Abstract translation: 一种用于根据记录在掩模上的预定图案将相对大的表面积的基底曝光于辐射的方法和装置，特别可用于将汽车挡风玻璃涂上的边框特别有用的方法和装置包括以下步骤：将预定图案逐渐记录在掩模上 连续条带的形式，并且移动辐射源以用辐射逐渐地扫描基片的表面，同时相对于辐射源移动连续带状掩模，使得连续条形掩模上的图案的部分 随着基板被辐射源逐渐扫描，它逐渐地与基板的相应部分对齐。