公开(公告)号：WO2009028578A3

公开(公告)日：2009-05-14

申请号：PCT/JP2008065348

申请日：2008-08-21

Applicant: CASIO COMPUTER CO LTD ,  JOBETTO HIROYASU

Inventor： JOBETTO HIROYASU

IPC: H01L23/538

CPC classification number: H01L23/5389 ,  H01L21/6835 ,  H01L23/3675 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24195 ,  H01L2224/24227 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/83192 ,  H01L2224/92144 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1094 ,  H01L2924/01015 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor constituent (2) having a semiconductor substrate (4) and a plurality of electrodes (13) for external connection provided under the semiconductor substrate (4). An under-layer insulating film (1) is provided under and around the semiconductor constituent. A plurality of under-layer wires (22, 22A) are provided under the under-layer insulating film and electrically connected to the electrodes for external connection of the semiconductor constituent. An insulating layer (31) is provided around the semiconductor constituent and on the under-layer insulating film. A frame-like insulating substrate (32) is embedded in an upper surface of the insulating layer and positioned around the semiconductor constituent (2). A plurality of upper-layer wires (34) are provided on the insulating substrate. A base plate (41) on which the semiconductor constituent and the insulating layer are mounted is removed.

Abstract translation: 半导体器件包括具有半导体衬底（4）的半导体构件（2）和用于外部连接的多个电极（13），设置在半导体衬底（4）的下方。 在半导体成分的下面和周围设置下层绝缘膜（1）。 在下层绝缘膜之下设置有多个下层布线（22,22A），并且电连接到用于半导体部件的外部连接的电极。 在半导体构件周围和下层绝缘膜周围设置绝缘层（31）。 在绝缘层的上表面嵌入框状的绝缘基板（32），并位于半导体成分（2）的周围。 在绝缘基板上设置有多条上层布线（34）。 去除其上安装有半导体成分和绝缘层的基板（41）。

公开(公告)号：WO2009028578A2

公开(公告)日：2009-03-05

申请号：PCT/JP2008/065348

申请日：2008-08-20

Applicant: CASIO COMPUTER CO., LTD. ,  JOBETTO, Hiroyasu

Inventor： JOBETTO, Hiroyasu

IPC: H01L23/538

CPC classification number: H01L23/5389 ,  H01L21/6835 ,  H01L23/3675 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24195 ,  H01L2224/24227 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/83192 ,  H01L2224/92144 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1094 ,  H01L2924/01015 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor constituent (2) having a semiconductor substrate (4) and a plurality of electrodes (13) for external connection provided under the semiconductor substrate (4). An under-layer insulating film (1) is provided under and around the semiconductor constituent. A plurality of under-layer wires (22, 22A) are provided under the under-layer insulating film and electrically connected to the electrodes for external connection of the semiconductor constituent. An insulating layer (31) is provided around the semiconductor constituent and on the under-layer insulating film. A frame-like insulating substrate (32) is embedded in an upper surface of the insulating layer and positioned around the semiconductor constituent (2). A plurality of upper-layer wires (34) are provided on the insulating substrate. A base plate (41) on which the semiconductor constituent and the insulating layer are mounted is removed.

Abstract translation: 半导体器件包括具有半导体衬底（4）和设置在半导体衬底（4）下方的用于外部连接的多个电极（13）的半导体组件（2）。 在半导体组件下方和周围提供底层绝缘膜（1）。 多个下层布线（22,22A）设置在下层绝缘膜下方并电连接到用于外部连接半导体组件的电极。 绝缘层（31）设置在半导体组件的周围和下层绝缘膜上。 框状绝缘基板（32）嵌入在绝缘层的上表面中并位于半导体组件（2）的周围。 多个上层布线（34）设置在绝缘基板上。 其上安装有半导体组件和绝缘层的基板（41）被去除。

公开(公告)号：WO2009001837A1

公开(公告)日：2008-12-31

申请号：PCT/JP2008/061502

申请日：2008-06-18

Applicant: CASIO COMPUTER CO., LTD. ,  KABASAWA, Yasunari

Inventor： KABASAWA, Yasunari

IPC: H01M8/04 ,  H01M8/10

CPC classification number: H01M8/04208 ,  H01M8/1007

Abstract: Disclosed is a fuel cell device comprising: a fuel cartridge to accumulate a fuel therein; and a fuel cell device main body to generate electric power by using the fuel accumulated in the fuel cartridge, wherein the fuel cell device main body is provided with a cartridge conveying body, the fuel cartridge can be attached to and detached from the cartridge conveying body, and the cartridge conveying body is provided so as to be slidingly rotatable with respect to the fuel cell device main body.

Abstract translation: 公开了一种燃料电池装置，包括：燃料盒，用于在其中积聚燃料; 以及燃料电池装置主体，其通过使用积聚在燃料盒中的燃料来发电，其中，所述燃料电池装置主体设置有盒输送体，所述燃料盒能够从所述盒输送体安装和拆卸 并且盒输送体设置成相对于燃料电池装置主体可滑动地旋转。

公开(公告)号：WO2008084650A3

公开(公告)日：2008-09-18

申请号：PCT/JP2007074587

申请日：2007-12-14

Applicant: CASIO COMPUTER CO LTD ,  MATSUMOTO HIROSHI ,  YAMAGUCHI IKUHIRO ,  KOBAYASHI HIROKAZU

Inventor： MATSUMOTO HIROSHI ,  YAMAGUCHI IKUHIRO ,  KOBAYASHI HIROKAZU

IPC: H01L31/0224 ,  H01L29/417 ,  H01L29/786 ,  H01L31/0392 ,  H01L31/113

CPC classification number: H01L31/022408 ,  H01L27/14678 ,  H01L31/03921 ,  H01L31/1136 ,  Y02E10/50

Abstract: A photosensor includes a semiconductor thin film (5) for photoelectric conversion having a first side portion and a second side portion. A source electrode (9) extends in the longitudinal direction of the semiconductor thin film (5) and has a side edge portion (9b, 9c) that overlaps the first side portion of the semiconductor thin film (5), and a drain electrode (10) extends in the longitudinal direction and has a side edge portion (10b, 10c) that overlaps the second side portion of the semiconductor thin film (5). At least one of the side edge portions (9b, 9c, 10b, 10c) of the source and drain electrodes (9, 10) has protruding portions (9b, 10b) which are arranged along the longitudinal direction and which overlap the semiconductor thin film (5), and notched portions (9c, 10c) formed between the protruding portions (9b, 10b). An ohmic contact layer (7, 8) is formed between the semiconductor thin film (5) and the protruding portions (9b, 10b) of the at least one of the side edge portions (9b, 9c, 10b, 10c) of the source and drain electrodes (9, 10).

Abstract translation: 光电传感器包括具有第一侧部和第二侧部的用于光电转换的半导体薄膜（5）。 源电极（9）在半导体薄膜（5）的长度方向上延伸，具有与半导体薄膜（5）的第一侧面重叠的侧缘部（9b，9c）和漏电极 10）在长度方向上延伸并且具有与半导体薄膜（5）的第二侧部重叠的侧边缘部分（10b，10c）。 源电极和漏电极（9,10）的侧边缘部分（9b，9c，10b，10c）中的至少一个具有突出部分（9b，10b），沿着纵向方向布置并与半导体薄膜 （5），以及形成在突出部（9b，10b）之间的切口部（9c，10c）。 在半导体薄膜（5）和源极的至少一个侧边缘部分（9b，9c，10b，10c）的突出部分（9b，10b）之间形成欧姆接触层（7,8） 和漏电极（9,10）。

公开(公告)号：WO2008084650A2

公开(公告)日：2008-07-17

申请号：PCT/JP2007/074587

申请日：2007-12-14

Applicant: CASIO COMPUTER CO., LTD. ,  MATSUMOTO, Hiroshi ,  YAMAGUCHI, Ikuhiro ,  KOBAYASHI, Hirokazu

Inventor： MATSUMOTO, Hiroshi ,  YAMAGUCHI, Ikuhiro ,  KOBAYASHI, Hirokazu

IPC: H01L31/0224 ,  H01L31/0392 ,  H01L31/113

CPC classification number: H01L31/022408 ,  H01L27/14678 ,  H01L31/03921 ,  H01L31/1136 ,  Y02E10/50

Abstract: A photosensor includes a semiconductor thin film (5) for photoelectric conversion having a first side portion and a second side portion. A source electrode (9) extends in the longitudinal direction of the semiconductor thin film (5) and has a side edge portion (9b, 9c) that overlaps the first side portion of the semiconductor thin film (5), and a drain electrode (10) extends in the longitudinal direction and has a side edge portion (10b, 10c) that overlaps the second side portion of the semiconductor thin film (5). At least one of the side edge portions (9b, 9c, 10b, 10c) of the source and drain electrodes (9, 10) has protruding portions (9b, 10b) which are arranged along the longitudinal direction and which overlap the semiconductor thin film (5), and notched portions (9c, 10c) formed between the protruding portions (9b, 10b). An ohmic contact layer (7, 8) is formed between the semiconductor thin film (5) and the protruding portions (9b, 10b) of the at least one of the side edge portions (9b, 9c, 10b, 10c) of the source and drain electrodes (9, 10).

Abstract translation: 光电传感器包括用于光电转换的半导体薄膜（5），其具有第一侧部分和第二侧部分。 源电极（9）沿半导体薄膜（5）的纵向延伸并且具有与半导体薄膜（5）的第一侧部重叠的侧边部（9b，9c）和漏电极（ 10）沿纵向延伸并具有与半导体薄膜（5）的第二侧部重叠的侧边部（10b，10c）。 源电极和漏电极（9,10）的侧边缘部分（9b，9c，10b，10c）中的至少一个具有沿着纵向方向布置的突出部分（9b，10b），其与半导体薄膜 （5）以及形成在突起部分（9b，10b）之间的凹口部分（9c，10c）。 在半导体薄膜（5）与源极的至少一个侧边缘部分（9b，9c，10b，10c）的突出部分（9b，10b）之间形成欧姆接触层（7,8） 和漏电极（9,10）。

公开(公告)号：WO2008029864A1

公开(公告)日：2008-03-13

申请号：PCT/JP2007/067354

申请日：2007-08-30

Applicant: CASIO COMPUTER CO., LTD. ,  SAKURAI, Keiichi ,  YUI, Takaaki

Inventor： SAKURAI, Keiichi ,  YUI, Takaaki

IPC: G06T5/40 ,  G06T5/00

CPC classification number: G06T5/40 ,  G06T5/009 ,  G06T5/50 ,  G06T2207/20221

Abstract: It is an object of the present invention to provide an image pickup apparatus which informs a user of a state of brightness adjusting operation and which has excellent usability for the user. Disclosed is a digital camera including an image adder 5d for synthesizing a plurality of continuously taken image frames to produce a synthesized image, an image processing apparatus 5 for executing image brightness adjusting processing for synthesizing a required synthesis number of image frames and adjusting brightness of the synthesized image at the time of continuous picture-taking of a subject, and a display device for displaying an image which is being synthesized by the image adder in the image brightness adjusting processing.

Abstract translation: 本发明的目的是提供一种图像拾取装置，其向用户通知亮度调整操作的状态，并且对用户具有优异的可用性。 公开了一种数字照相机，包括：图像加法器5d，用于合成多个连续拍摄的图像帧以产生合成图像;图像处理装置5，用于执行图像亮度调整处理，用于合成所需的图像帧合成数量并调整图像的亮度 以及在图像亮度调整处理中显示由图像加法器正在合成的图像的显示装置。

公开(公告)号：WO2008023844A1

公开(公告)日：2008-02-28

申请号：PCT/JP2007/066948

申请日：2007-08-22

Applicant: CASIO COMPUTER CO., LTD. ,  HOSODA, Jun

Inventor： HOSODA, Jun

IPC: G06F17/30

CPC classification number: G06F17/30056 ,  G06F17/30274 ,  H04N1/00127 ,  H04N1/00129 ,  H04N1/00204 ,  H04N1/00458 ,  H04N1/32112 ,  H04N5/772 ,  H04N7/163 ,  H04N9/8227 ,  H04N21/4122 ,  H04N21/4223 ,  H04N21/4334 ,  H04N21/8153 ,  H04N21/8543 ,  H04N2101/00 ,  H04N2201/0084 ,  H04N2201/3242 ,  H04N2201/3247

Abstract: Disclosed is a digital camera 2 including: a communication control unit 24 that receives album information A transmitted from a display control device and formed of a plurality of JPEG image files and a play list indicating a linkage among the files; a recording medium 25 that records the album information; an image display unit 222 that displays images of the plurality of recorded JPEG image files; and a CPU 261 that performs processing for displaying, on the image display unit 222, images of JPEG image files associated with one another by image linkage information of the play list among the plurality of JPEG image files based on an input of an image switching instruction from the operation input unit 231. In such way, plural pieces of such image information are recorded in order, thus making it possible to efficiently browse the plural pieces of image information.

Abstract translation: 公开了一种数字照相机2，包括：通信控制单元24，其接收从显示控制装置发送并由多个JPEG图像文件形成的专辑信息A和表示文件之间的连接的播放列表; 记录专辑信息的记录介质25; 显示多个记录的JPEG图像文件的图像的图像显示单元222; 以及CPU 261，其执行处理，用于基于图像切换指令的输入，在图像显示单元222上显示通过多个JPEG图像文件中的播放列表的图像链接信息彼此相关联的JPEG图像文件的图像 由此，能够顺序地记录多张这样的图像信息，能够有效地浏览多张图像信息。

公开(公告)号：WO2008015986A1

公开(公告)日：2008-02-07

申请号：PCT/JP2007/064827

申请日：2007-07-23

Applicant: CASIO COMPUTER CO., LTD.

Inventor： TEJIMA, Yasuyuki ,  KAWAKAMI, Etsuro

IPC: G02B15/177 ,  G02B15/173 ,  G02B15/14

CPC classification number: G02B15/177 ,  G02B13/16

Abstract: To provide a thin projector for projecting an image from a light bulb such as a DMD for forming an image by changing reflecting directions of light on to a screen or the like in an enlarged fashion and a compact zoom lens with high performance and which has a small lens aperture. There is provided a zoom lens made up of, in order from an enlarging size thereof, a first lens group having a negative refractive power as a whole, a second lens group having a positive refractive power as a whole, a third lens group having a negative refractive power as a whole, and a fourth lens group having a positive refractive power as a whole, wherein the fourth lens group is fixed while the focal length is being changed, the first lens group and the second lens group are made to move on an optical axis in a direction from the enlarging side towards the reducing side over a range from a wide angle end to an intermediate range and are made to move on the optical axis in a direction from the reducing side towards the enlarging side over a range from the intermediate range to a telephoto end, and the third lens group is made to move on the optical axis in a direction from the reducing side to the enlarging side over a range from the wide angle end to the telephoto end, whereby the focal length of the whole lens system of the zoom lens is changed.

Abstract translation: 为了提供一种薄投影仪，用于通过将放大的光的反射方向改变到屏幕等上以及具有高性能的紧凑型变焦透镜来投射来自诸如用于形成图像的DMD的灯泡的图像的图像，并且具有 小透镜光圈。 提供了一种变焦透镜，其放大倍数依次为具有负屈光力的第一透镜组，整体具有正折光力的第二透镜组，具有正折射光焦度的第三透镜组 作为整体的负屈光力，以及整体具有正折射力的第四透镜组，其中第四透镜组在焦距变化时被固定，使第一透镜组和第二透镜组移动 在从广角端到中间范围的范围内从放大侧朝向还原侧的方向的光轴在从减速侧朝向放大侧的方向上在光轴上移动，范围从 在远摄端到长焦端的范围内使第三透镜组在从缩短侧到扩大侧的方向上在光轴上移动，由此， 改变变焦镜头整个镜头系统的焦距。

公开(公告)号：WO2007142251A1

公开(公告)日：2007-12-13

申请号：PCT/JP2007/061403

申请日：2007-05-30

Applicant: CASIO COMPUTER CO., LTD. ,  YOSHIDA, Junichi

Inventor： YOSHIDA, Junichi

IPC: G09F9/37

CPC classification number: G09F9/372

Abstract: An electronic paper (11A) which has the display screen of a nonvolatile display unit (17) is placed on a tablet (14) of an electronic pad (12A) with a battery power supply and is bound by a binder unit (13), which causes the electronic pad (12A) to supply electric power to and make a communication connection with the electronic paper (11A) via an electromagnetic induction unit provided so as to correspond to the bind-in structure. When a handwriting input operation is performed with an electronic pen (15) on the display screen (17) of the electronic paper (11A), the coordinates of the pen input position are detected by the tablet (14), which transmits vector data corresponding to the coordinate locus as display data to the electronic paper (11A). Then, the display data is displayed on the nonvolatile display unit (17).

Abstract translation: 具有非易失性显示单元（17）的显示屏的电子纸（11A）被放置在具有电池电源的电子垫（12A）的平板（14）上并且由粘合剂单元（13）结合， 这使得电子焊盘（12A）经由设置为对应于绑定结构的电磁感应单元向电子纸（11A）提供电力并进行通信连接。 当在电子纸（11A）的显示屏幕（17）上用电子笔（15）执行手写输入操作时，笔输入位置的坐标由平板电脑（14）检测，该平板电脑（14）发送对应于 作为到电子纸（11A）的显示数据的坐标轨迹。 然后，显示数据显示在非易失性显示单元（17）上。

公开(公告)号：WO2007089048A3

公开(公告)日：2007-11-22

申请号：PCT/JP2007052310

申请日：2007-02-02

Applicant: KOCHI IND PROMOTION CT ,  CASIO COMPUTER CO LTD ,  FURUTA MAMORU ,  HIRAO TAKASHI ,  FURUTA HIROSHI ,  MATSUDA TOKIYOSHI ,  HIRAMATSU TAKAHIRO ,  ISHII HIROMITSU ,  HOKARI HITOSHI ,  YOSHIDA MOTOHIKO

Inventor： FURUTA MAMORU ,  HIRAO TAKASHI ,  FURUTA HIROSHI ,  MATSUDA TOKIYOSHI ,  HIRAMATSU TAKAHIRO ,  ISHII HIROMITSU ,  HOKARI HITOSHI ,  YOSHIDA MOTOHIKO

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

Abstract: A thin film transistor includes a substrate (1, 11) , and a pair of source/drain electrodes (2, 14) (i.e. , a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films (10, 20) are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer (3, 15) is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

Abstract translation: 薄膜晶体管包括基板（1,11），以及形成在基板上并在其之间形成间隙的一对源极/漏极（2,14）（即源电极和漏电极）。 提供一对低电阻导电薄膜（10,20），使得每个涂覆源极/漏极之一的至少一部分。 低电阻导电薄膜在它们之间限定了间隙。 在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层（3,15），并沿着限定在低电阻导电薄膜之间的间隙延伸，以作为通道。 氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。