公开(公告)号：WO2012098172A3

公开(公告)日：2012-10-04

申请号：PCT/EP2012050742

申请日：2012-01-18

Applicant: MAX DELBRUECK CENTRUM ,  FORSCHUNGSVERBUND BERLIN EV ,  KLUSSMANN ENNO ,  ROSENTHAL WALTER ,  MILIC JELENA ,  BERGMANN MARTIN W

Inventor： KLUSSMANN ENNO ,  ROSENTHAL WALTER ,  MILIC JELENA ,  BERGMANN MARTIN W

IPC: A61K31/135 ,  A61K31/335 ,  A61K31/381 ,  A61P9/00

CPC classification number: C07D417/12 ,  A61K31/135 ,  A61K31/343 ,  A61K31/381 ,  A61K31/428 ,  A61K31/4402 ,  A61K31/4406 ,  A61K31/4427 ,  A61K31/47 ,  A61K31/4709 ,  C07D333/64 ,  C07D403/12 ,  C07D409/12 ,  C07D413/12

Abstract: The invention relates to N-arylaminomethylenebenzothiophenones of General Formula (I) for use as a drug for the treatment of cardiovascular diseases, wherein E is S, O, or CH2, D is CH or NH, and Ar is a phenyl or naphtyl moiety substituted by an electron-withdrawing group, an unsubstituted heteroaryl residue, or a heteroaryl residue substituted by alkyl or an electron-withdrawing group.

Abstract translation: 本发明涉及用作治疗心血管疾病的药物的通式（I）的N-芳基氨基亚甲基苯并噻吩酮，其中E是S，O或CH 2，D是CH或NH，Ar是苯基或萘基部分取代的 通过吸电子基团取代未取代的杂芳基残基或被烷基或吸电子基团取代的杂芳基残基。

公开(公告)号：WO2009062845A3

公开(公告)日：2009-09-17

申请号：PCT/EP2008064620

申请日：2008-10-28

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  GESCHE ROLAND

Inventor： GESCHE ROLAND

IPC: H05H1/46 ,  H01J37/32

CPC classification number: H05H1/46 ,  H01J37/32082 ,  H01J37/32165

Abstract: According to the method, a voltage which maintains the plasma is produced by superimposing on a radio-frequency voltage at a defined operating frequency at least one further radio-frequency voltage, in each case at a multiple of this operating frequency, and in each case with a variable amplitude and phase, on a phase-locked basis. At least two radio-frequency power generators (1 to 4) are provided for a corresponding generator circuit, one (1) of which operates at a defined operating frequency (f) and the other or others of which (2 to 4) each operate at a multiple of this operating frequency (f). All the radio-frequency power generators (1 to 4) are coupled to one another on a phase-locked basis, and the relative phase angle as well as the respective amplitude of each radio-frequency power generator (1 to 4) can be regulated individually by means of a dedicated matching circuit (5 to 8). As an alternative to this, it is possible to provide an oscillator which operates at a defined operating frequency (f) and at least one further frequency multiplier, which is connected downstream from the oscillator, said frequency multiplier or multipliers producing harmonics of this operating frequency (f).

Abstract translation: 提供一种等离子体维持电压的至少一个进一步的高频电压，每个的多个所述工作频率，和各可调节的振幅和相位被叠加锁相环通过高频电压的具有限定的工作频率的方法。 用于对应的发生器电路包括至少两个高频电力的发电机（1至4）被提供，其中一个（1）在给定的工作频率（f）和或其他（2〜4）在每种情况下该操作频率的倍数（F）的 工作。 任何高频功率发生器（1〜4）被相位锁定到彼此和相对相位位置以及各高频功率发生器的（1〜4）的各振幅是分别由单独的匹配电路（5至8）进行调节。 或者，可以提供以规定的工作频率（f）工作的振荡器和连接在振荡器下游的至少一个另外的倍频器，其产生该工作频率（f）的谐波。

公开(公告)号：WO2008155138A2

公开(公告)日：2008-12-24

申请号：PCT/EP2008005192

申请日：2008-06-17

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  LANGE RALPH-PETER ,  JOCKEL DIETMAR ,  ZIEM MARIO ,  RUDOLPH PETER ,  KIESSLING FRANK ,  FRANK-ROTSCH CHRISTIANE ,  CZUPALLA MATTHIAS ,  NACKE BERNARD ,  KASJANOW HELENE

Inventor： LANGE RALPH-PETER ,  JOCKEL DIETMAR ,  ZIEM MARIO ,  RUDOLPH PETER ,  KIESSLING FRANK ,  FRANK-ROTSCH CHRISTIANE ,  CZUPALLA MATTHIAS ,  NACKE BERNARD ,  KASJANOW HELENE

IPC: C30B15/14 ,  C30B11/00

CPC classification number: C30B15/14 ,  C30B11/003 ,  C30B11/007 ,  C30B15/305

Abstract: The invention relates to a device for growing crystals from electroconductive melts, said device at least comprising a crucible (12) containing a melt (11) and arranged in a growing chamber (10), and a heating device (1) which surrounds the crucible (12) and is embodied as a multiple-coil arrangement consisting of coils (1a, 1 b, 1c) arranged one above the other. Said coils (1a, 1 b, 1c) comprise graduated or continuous coil windings (9) and feeder bars (2a, 2b, 2c, 2m) are applied to the coils (1a, 1 b, 1c), said bars being electrically connected to an energy supply device (13) arranged outside the growing chamber (10). According to the invention, the heating device (1) comprises stabilisation elements (3a), (3b), (3c), 3d) on the coil windings (9), and the feeder bars (2a), (2b), (2c), (2m) are formed as angular parts.

Abstract translation: 本发明涉及一种用于生长导电熔体的结晶的装置，设置在至少包括在生长室中（10），熔体（11）中含有的坩埚（12），围绕加热器（1），坩埚（12），其作为 重叠线圈（1A，1B，1C）被执行，其中，所述线圈（1A，1B，1C）级或无级线圈绕组（9）和所述线圈（1A，1B，1C）馈送轨（2a的更多线圈组件， 图2b，其被电布置有（生长室10）电源装置（13外2C，2M）被安装）连接。 可以设想的是，加热装置（1）稳定化元素（3A），（3B），（3C），在线圈匝（9）和所述电源轨（2a）中的3D），（2B），（2C），（2M） 在角部的形式被配置。

公开(公告)号：WO2006128898A9

公开(公告)日：2008-01-31

申请号：PCT/EP2006062824

申请日：2006-06-01

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  KRUEGER OLAF ,  WUERFL JOACHIM ,  SCHOENE GERD

Inventor： KRUEGER OLAF ,  WUERFL JOACHIM ,  SCHOENE GERD

IPC: H01L21/768

CPC classification number: H01L21/76898

Abstract: The invention relates to a method for producing vertical electrical connections (micro-vias) in semiconductor wafers for the fabrication of semiconductor components. The method is characterized by the following steps: - application of a protective resist to the wafer front side - patterning of the protective resist on the wafer front side such that the contacts to be connected to the wafer rear side become free - laser drilling of passage holes at the contact connection locations from the wafer rear side through the semiconductor substrate, the active layers and the contacts to be connected on the wafer front side - cleaning of the wafer (debris removal) - application of a plating base to the wafer rear side and into the laser-drilled passage holes - application of gold by electrodeposition onto the metallized wafer rear side and the passage holes - resist stripping of the protective resist - application of an antiwetting layer in the region of the entrance openings of the passage holes at the wafer rear side.

Abstract translation: 本发明涉及一种制造用于半导体器件的制造中的半导体晶片的垂直电接触连接（微通孔）的方法。 该方法的特征在于以下步骤： - 在晶片前表面上施加保护涂层 - 构建在晶片前侧，使得与在晶片背侧触点连接保护清漆自由 - 激光通孔在所述的接触连接点钻 晶片背面通过半导体基板侧，有源层和接触被连接在晶片前侧 - 在晶片的清洗（除去碎片） - 将电镀基座到晶片背面侧并进入激光通孔钻 - 金电镀施加到金属化 晶片背面和贯通孔 - 涂料去除保护清漆 - 的穿过晶片背面上的孔中的入口开口的区域施加一个反润湿层。

公开(公告)号：WO2006089801A8

公开(公告)日：2007-04-19

申请号：PCT/EP2006001960

申请日：2006-02-24

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  FREUND CHRISTIAN ,  ZIMMERMANN JUERGEN

Inventor： FREUND CHRISTIAN ,  ZIMMERMANN JUERGEN

IPC: C07K14/435 ,  G01N33/50

CPC classification number: C07K14/47

Abstract: The invention relates to an amino acid sequence EKKEQKEKEK KEQEIKKKFK LTGPIQVIHL AKACCDVKGG KNELSFKQGE QIEIIRITDN PEGKWLGRTA RGSYGYIKTT AVEIDYDSLK LKKD (= SEQ ID No. 1), a protein recognition domain comprising said sequence, the use of the amino acid sequence or protein recognition domain for identifying redox-dependent protein-protein or protein-lipid interactions and to a method for detecting target molecules that is dependent on the redox potential. The invention also relates to the use of the amino acid sequence as a marker for measuring the redox potential in cells.

Abstract translation: 本发明优选涉及的氨基酸序列EKKEQKEKEK KEQEIKKKFK LTGPIQVIHL AKACCDVKGG KNELSFKQGE QIEIIRITDN PEGKWLGRTA RGSYGYIKTT AVEIDYDSLK LKKD（= SEQ ID NO。1），蛋白质识别结构域包含该氨基酸序列以及使用的氨基酸序列的或用于氧化还原蛋白依赖性蛋白或蛋白的鉴定的蛋白识别结构域 脂质相互作用，以及用于响应于该氧化还原电位检测目标分子的方法; 本发明还涉及使用该氨基酸序列的作为用于测量在细胞中的氧化还原电势的标记。

公开(公告)号：WO2006000213A9

公开(公告)日：2007-03-08

申请号：PCT/DE2005001181

申请日：2005-06-29

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  KLUSSMANN ENNO ,  ROSENTHAL WALTER ,  HUNDSRUCKER CHRISTIAN

Inventor： KLUSSMANN ENNO ,  ROSENTHAL WALTER ,  HUNDSRUCKER CHRISTIAN

IPC: C07K14/43

CPC classification number: C07K14/47

Abstract: The invention relates to a nucleic acid sequence that codes for peptides which inhibit the interaction of protein kinase A (PKA) and protein kinase A-anchor proteins (AKAP), a host organism, which has the nucleic acid sequence and, optionally, expresses the peptides. The invention also relates to the use of the peptides and of the host organism when studying diseases, which are associated with the AKAP PKA interaction, and to the use of the peptides as a pharmaceutical agent for treating diseases of this type.

Abstract translation: 本发明涉及的核酸序列编码的肽，其抑制蛋白激酶A（PKA）和蛋白质的相互作用激酶A锚定蛋白（AKAP）的宿主生物体，其包含的核酸序列和任选地表达所述肽以及使用该肽以及宿主生物 在其与AKAP相互作用PKA以及使用肽作为用于这种疾病的治疗药物的相关的疾病的研究。

公开(公告)号：WO2006089801A3

公开(公告)日：2006-11-02

申请号：PCT/EP2006001960

申请日：2006-02-24

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  FREUND CHRISTIAN ,  ZIMMERMANN JUERGEN

Inventor： FREUND CHRISTIAN ,  ZIMMERMANN JUERGEN

IPC: C07K14/435 ,  G01N33/50

CPC classification number: C07K14/47

Abstract: The invention relates to an amino acid sequence EKKEQKEKEK KEQEIKKKFK LTGPIQVIHL AKACCDVKGG KNELSFKQGE QIEIIRITDN PEGKWLGRTA RGSYGYIKTT AVEIDYDSLK LKKD (= SEQ ID No. 1), a protein recognition domain comprising said sequence, the use of the amino acid sequence or protein recognition domain for identifying redox-dependent protein-protein or protein-lipid interactions and to a method for detecting target molecules that is dependent on the redox potential. The invention also relates to the use of the amino acid sequence as a marker for measuring the redox potential in cells.

Abstract translation: 本发明优选涉及的氨基酸序列EKKEQKEKEK KEQEIKKKFK LTGPIQVIHL AKACCDVKGG KNELSFKQGE QIEIIRITDN PEGKWLGRTA RGSYGYIKTT AVEIDYDSLK LKKD（= SEQ ID NO。1），蛋白质识别结构域包含该氨基酸序列以及使用的氨基酸序列的或用于氧化还原蛋白依赖性蛋白或蛋白的鉴定的蛋白识别结构域 脂质相互作用和根据氧化还原电位检测靶分子的方法; 本发明还涉及该氨基酸序列作为测量细胞中氧化还原电位的标记物的用途。

公开(公告)号：WO2005075508A8

公开(公告)日：2005-10-27

申请号：PCT/EP2005001462

申请日：2005-02-10

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  MEYER THOMAS ,  VINKEMEYER UWE

Inventor： MEYER THOMAS ,  VINKEMEYER UWE

IPC: C07K14/47

CPC classification number: C07K14/4705

Abstract: The invention relates to Stat molecules which are mutated and their use in the activation of gene expression, in the screening of inhibitors or activators of transcription factors, the identification of binding proteins, the production of a drug for diagnosis and/or treatment of diseases associated with the activation of gene expression as well as in the targeting of active substances. The Stat molecules occurring in the nucleus of a cutaneous T cell lymphoma cell line are characterized in that at least one conserved hydrophobic amino acid on the surface of the N-domain of the Stat wild type is mutated.

Abstract translation: 本发明涉及突变的Stat分子及其在激活基因表达中的用途，筛选转录因子的抑制剂或激活因子，结合蛋白的鉴定，用于诊断和/或治疗相关疾病的药物的产生 激活基因表达以及靶向活性物质。 发生在皮肤T细胞淋巴瘤细胞系核中的Stat分子的特征在于Stat野生型N结构域表面上至少有一个保守的疏水性氨基酸被突变。

公开(公告)号：WO2013068125A1

公开(公告)日：2013-05-16

申请号：PCT/EP2012004667

申请日：2012-11-09

Applicant: FORSCHUNGSVERBUND BERLIN EV

Inventor： BRANDT OLIVER ,  GEELHAAR LUTZ ,  KAGANER VLADIMIR ,  WOELZ MARTIN

IPC: H01L33/18

CPC classification number: H01L29/122 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/2003 ,  H01L31/035209 ,  H01L33/06 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type. According to the invention, at least a height (h2) of the section (12, 22) of the second crystal type and a lateral thickness (D) of the active region (40) is formed perpendicular to the main direction, in such a manner that the lattice strain in one of the sections (11) of the first crystal type also depends on the lattice constants in the other section (13) of the first crystal type. A semiconductor device (100) is also described, having at least one column-shaped or wall-shaped semiconductor element (10, 20) on a substrate (30), which can be produced in particular by means of the stated method.

Abstract translation: 中描述，其中将基板（30）的至少一个柱状或壁状半导体元件（10，20）形成，其延伸在主方向（z），其中，所述活性在一个上的半导体器件（100），制造方法 区域（40）的至少两个部分（11，13，21，23）的第一晶体类型的每个具有预定的高度（H1，H2）中形成的第二晶体类型的部分（12，22），其中第一和第二类型的晶体和它们之间 具有不同的晶格常数和每一个都具有晶格应变，这依赖于所述第二晶体类型的部分中的晶格常数的第一晶体类型的部分。 根据本发明的部分的高度（H2）中的至少一个（12，22）（D）的第二晶体类型的有源区（40）和一Lateraldicke垂直形成的主方向定向，使得晶格应变（在部分11中的一个 ）第一结晶型加成（在第一晶体类型依赖性的其它部分13）的晶格常数的。 它也包括在衬底上的至少一个柱状或壁状半导体元件（10，20）中描述的（30），其特别是通过上述方法制造的半导体装置（100）。

公开(公告)号：WO2012034972A3

公开(公告)日：2012-08-16

申请号：PCT/EP2011065751

申请日：2011-09-12

Applicant: FORSCHUNGSVERBUND BERLIN EV ,  CRUMP PAUL ,  ERBERT GOETZ ,  WENZEL HANS

Inventor： CRUMP PAUL ,  ERBERT GOETZ ,  WENZEL HANS

IPC: H01S5/22 ,  H01S5/343

CPC classification number: H01S5/20 ,  A61B18/203 ,  A61B2018/00476 ,  A61B2090/049 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3213 ,  H01S2301/185

Abstract: The present invention relates to a laser diode with high efficiency and high eye safety. The object of the present invention is to specify a light source with high efficiency and high eye safety at the same time. For this purpose, the active layer (10), the first outer layer (14), the first waveguide layer (12), the second waveguide layer (16) and the second outer layer (18) are intended to be designed such that 0.01 µm = dwL = 1.0 µm and ?n = 0.04, where dwL is the sum of the layer thickness of the first waveguide layer (12), the layer thickness of the active layer (10) and the layer thickness of the second waveguide layer (16), and ?n is a maximum of the refractive-index difference between the first outer layer (14) and the first waveguide layer (12), and the refractive-index difference between the second waveguide layer (16) and the second outer layer (18).

Abstract translation: 本发明涉及一种具有高效率和高眼安全激光二极管。 它是本发明的一个目的是提供具有高效率和高眼安全的光源。 对于这一点，在有源层（10），所述第一包层（14），所述第一波导层（12），第二波导层（16）和所述第二包层（18）应该是这样的，0.01微米= DWL = 1配置的， 0微米与 - ，N = 0.04，和DWL是第一波导层（12），有源层（10）和所述第二波导层的层厚度（16）和层厚度的厚度之和△n为最大值之间的折射率差的 是所述第一包层（14）和所述第一波导层（12）和所述第二波导层（16）和所述第二包层（18）之间的折射率差。