公开(公告)号：US20050082544A1

公开(公告)日：2005-04-21

申请号：US10687768

申请日：2003-10-20

Applicant: Yukio Narukawa ,  Isamu Niki ,  Axel Scherer ,  Koichi Okamoto ,  Yoichi Kawakami ,  Mitsuru Funato ,  Shigeo Fujita

Inventor： Yukio Narukawa ,  Isamu Niki ,  Axel Scherer ,  Koichi Okamoto ,  Yoichi Kawakami ,  Mitsuru Funato ,  Shigeo Fujita

IPC: H01L27/15 ,  H01L33/24 ,  H01S5/02 ,  H01S5/32 ,  H01S5/343

CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/34333 ,  H01S2304/12

Abstract: The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a growth rate difference gives rise to a difference in the thickness across the quantum well (active layer), giving out light emissions having different light emission wavelength peaks or different colors.

Abstract translation: 本发明提供了一种氮化物半导体发光器件，其包括形成在异质衬底上的氮化镓半导体层，其中具有不同发光波长或不同颜色的发光具有相同的有源层。 凹槽106通过在衬底上形成的第一导电（n）型半导体层102中蚀刻形成，其中缓冲层位于它们之间。 每个凹槽以与主C平面不同的平面取向曝光。 例如，A平面的平面取向被暴露。 活性层生长并在该平面取向的平面上，在凹部的底部和非凹部的C面上表面上接合。 第二导电（p）型半导体层形成在凹部的内表面上。 由于活性层以两个或多个平面取向与半导体层连续形成，所以生长速率差导致量子阱（有源层）上的厚度差异，发出具有不同发光波长峰值或不同的发光波长峰值 颜色。

公开(公告)号：US06870191B2

公开(公告)日：2005-03-22

申请号：US10201600

申请日：2002-07-24

Applicant: Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

Inventor： Isamu Niki ,  Motokazu Yamada ,  Masahiko Sano ,  Shuji Shioji

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L27/15

CPC classification number: H01L33/16 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32 ,  H01L2933/0083 ,  Y10T428/24355 ,  Y10T428/24479

Abstract: A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Abstract translation: 在半导体发光器件中稳定地确保高的外部量子效率。 在基板的表面部分上形成至少一个凹部和/或突出部分，用于散射或衍射在发光区域中产生的光。 凹部和/或突出部分具有防止在半导体层中发生晶体缺陷的形状。